• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.2
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• pp.7-13
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• 2011

This paper presents a Time-to-Digital Converter which is a key block of an All-Digital Phase Locked Loop. In this work, a Vernier Delay Line is added in a conventional Gated Ring Oscillator, so it could get multi-phases and a high resolution. The Gated Ring Oscillator uses 7 unit delay cell, the Vernier Delay Line is used each delay cell. So proposed Time-to-Digital Converter uses total 21 phases. This Time-to-Digital Converter circuit is designed and laid out in $0.13{\mu}m$ 1P-6M CMOS technology. The proposed Time-to-Digital Converter achieves 26ps resolution, maximum input signal frequency is 100MHz and the digital output of proposed Time-to-Digital Converter are 8-bits. The proposed TDC detect 5ns phase difference between Start and Stop signal. A power consumption is 8.4~12.7mW depending on Enable signal width.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.21-25
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• 1999

In order to remove minority carries of the base region at changing signal in conventional bipolar logic circuit, we made transistor which is composed of NPN transistor shortened buried layer under the Base region, PNP transistor which is merged in base, epi layer and substrate. Also the Ring-Oscillator for measuring transmission time-delay per gate was designed as well. In the result, we get amplitude of logic voltage of 200mV, the minimum of transmission delay-time of 211nS, and the minimum of transmission delay-time per gate of 7.26ns in AC characteristic output of Ring-Oscillator connected Gate.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 1999.05a
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• pp.415-419
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• 1999

Many bipolar logic circuit of conventional occurred problem of speed delay according to deep saturation state of vertical NPN Transistor. In order to remove minority carries of the base region at changing signal in conventional bipolar logic circuit, we made transistor which is composed of NPN transistor shortened buried layer under the Base region, PNP transistor which is merged in base, epi layer and substrate. Also the Ring-Oscillator for measuring transmission time-delay per gate was designed as well. The structure of Gate consists of the vertical NPN Transistor, substrate and Merged PNP Transistor. In the result, we fount that tarriers which are coming into intrinsic Base from Emitter and the portion of edge are relatively a lot, so those make Base currents a lot and Gain is low with a few of collector currents because of cutting the buried layer of collector of conventional junction area. Merged PNP Transistor's currents are low because Base width is wide and the difference of Emitter's density and Base's density is small. we get amplitude of logic voltage of 200mv, the minimum of transmission delay-time of 211nS, and the minimum of transmission delay-time per gate of 7.26nS in AC characteristic output of Ring-Oscillator connected Gate.

• 전자공학회논문지 IE
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• v.45 no.4
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• pp.1-6
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• 2008

A fast-hopping frequency synthesizer that reduces complexity and power consumption is presented for MB-OFDM UWB applications. The proposed architecture uses 3960 MHz LC VCO, 528 MHz ring oscillator, passive mixer and LC-tuned Q-enhancement BPF to generate Band Group 1 frequencies. The adjacent channel rejection ratio is less than -40 dBc for 3432 MHz and -H dBc for 4488 MHz. A fast switching SCL-tpre MUX is used to produce the required channel output signal and it takes less than 2.2 ns for band switching. The total power consumption is 47.9 mW from a 1.8 V supply.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.2 s.332
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• pp.1-8
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• 2005

An area-efficient DC-DC voltage up-converter in a poly-Si TFT technology for system-on-glass is described which provides low-ripple output. The voltage up-converter is composed of charge-pumping circuit, comparator with threshold voltage mismatch compensation, oscillator, buffer, and delay circuit for multi-phase clock generation. The low ripple output is obtained by multi-phase clocking without increasing neither clock frequency nor filtering capacitor The measurement results have shown that the ripple on the output voltage with 4-phase clocking is 123mV, while Dickson and conventional cross-coupled charge pump has 590mV and 215mV voltage ripple, respectively, for $Rout=100k\Omega$, Cout-100pF, and fclk=1MHz. The filtering capacitor required for 50mV ripple voltage is 1029pF and 575pF for Dickson and conventional cross-coupled structure, for Iout=100uA, and fclk=1MHz, while the proposed multi-phase clocking DC-DC converter with 4-phase and 6-phase clocking requires only 290pF and 157pF, respectively. The efficiency of conventional and the multi-phase clocking DC-DC converter with 4-phase clocking is $65.7\%\;and\;65.3\%$, respectively, while Dickson charge pump has $59\%$ efficiency.