• Journal of the Microelectronics and Packaging Society
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• v.31 no.2
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• pp.69-77
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• 2024

Due to the miniaturization and multifunctionality of electronic devices, a surface mount technology in the form of molded interconnect devices (MID), which directly forms electrodes and circuits on the plastic injection parts and mounts components and parts on them, is being introduced to overcome the limitations in the mounting area of electronic components. However, when using plastic injection parts with low thermal stability, there are difficulties in mounting components through the conventional reflow process. In this study, we developed a process that utilizes induction heating, which can selectively heat specific areas or materials, to melt solder and mount components without causing any thermal damage to the plastic. We designed the shape of an induction heating Cu coil that can concentrate the magnetic flux on the area to be heated, and verified the concentration of the magnetic flux and the degree of heating on the pad part through finite element method (FEM). LEDs, capacitors, resistors, and connectors were mounted on a polycarbonate substrate using induction heating to verify the mounting process, and their functionality was confirmed. We presented the applicability of a selective heating process through magnetic induction that can overcome the limitations of the reflow method.

• Journal of the Korean institute of surface engineering
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• v.38 no.1
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• pp.28-36
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• 2005

In this study, the reflow characteristics of copper thin films which is expected to be used as interconnection materials in the next generation semiconductor devices were investigated. Cu thin films were deposited on the TaN diffusion barrier by metal organic chemical vapor deposition (MOCVD) and annealed at the temperature between 250℃ and 550℃ in various ambient gases. When the Cu thin films were annealed in the hydrogen ambience compared with oxygen ambience, sheet resistance of Cu thin films decreased and the breakdown of TaN diffusion barrier was not occurred and a stable Cu/TaN/Si structure was formed at the annealing temperature of 450℃. In addition, reflow properties of Cu thin films could be enhanced in H₂ ambient. With Cu reflow process, we could fill the trench patterns of 0.16～0.24 11m with aspect ratio of 4.17～6.25 at the annealing temperature of 450℃ in hydrogen ambience. It is expected that Cu reflow process will be applied to fill the deep pattern with ultra fine structure in metallization.

• Journal of the Korean Society for Precision Engineering
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• v.32 no.3
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• pp.299-305
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• 2015

In this paper, we propose a simple and low-cost fabrication method of polymer microlens using solvent-vapor-assisted reflow (SVAR). Metal molds for replication of polymer were fabricated using micro milling and the cylindrical shape of polymer was imprinted using hot-embossing process. The cylindrical shape of polymer was changed to hemispherical lens shape by SVAR. The characteristics of fabricated microlens were evaluated according to the condition of SVAR such as temperature and time. The focal length of polymer microlens could be controlled more easily in low-temperature and long-time condition than in high-temperature and short-time condition. That is, the level of concentrated light to focal point could be improved through the control of temperature and time. Also, we confirmed that toluene was more appropriate solvent than acetone in fabrication of PMMA polymer microlens using SVAR.

• Journal of the Microelectronics and Packaging Society
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• v.14 no.3
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• pp.57-64
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• 2007

New Chip-on-glass technology to attach an Si chip directly on the glass substrate of LCD panel was studied with local heating method of the Si chip by using thin film heater fabricated on the Si chip. Square-shaped Cu thin film heater with the width of $150\;{\mu}m$, thickness of $0.8\;{\mu}m$, and total length of 12.15 mm was sputter-deposited on the $5\;mm{\times}5\;mm$ Si chip. With applying current of 0.9A for 60 sec to the Cu thin film heater, COG bonding of a Si chip to a glass substrate was successfully accomplished with reflowing the Sn-3.5Ag solder bumps on the Si chip.

• Journal of the Semiconductor & Display Technology
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• v.5 no.3 s.16
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• pp.29-32
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• 2006

Because of new requirements related to the employment of SMT(Surface Mounting Technology) manufacturing and the diversity of components on high density PCB(Printed Circuit Boards), Thermal control of the reflow process is required in order to achieve acceptable yields and reliability of SMT assemblies. Accurate control of the temperature distribution during the reflow process is one of the major requirements, especially in lead-free assembly. This study has been performed for reflow process using the commercial CFD(Computational Fluid Dynamics) tool for predicting flow and temperature distributions. Porous plate was installed to prevent leakage flow which was one of the major problem of temperature uniformity in the reflow process. There is a separation region where the flow is turned. Outside wall made of porous plate is to prevent and minimize separation region for acquiring uniform temperature during operation. This paper provided design concept from CFD results of the steady state temperature distribution and flow field inside a reflow oven.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2007.10a
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• pp.100-103
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• 2007

A microlens array has been required to improve light conversion efficiency in image sensors. A microlens array can be usually fabricated by photoresist reflow, hot-embossing, micro injection molding, and UV-imprinting. Among these processes, a UV-imprinting, which is operated at room temperature with relatively low applied pressure, can be a desirable process to integrate microlens array on image sensors, because this process provides the components with low thermal expansion, enhanced stability, and low birefringence, furthermore, it is more suitable for mass production of high quality microlens array. In this study, to analyze the optical properties of the wafer scale microlens array integrated image sensor, another wafer scale simulated image sensor chip array was designed and fabricated. An aspherical square microlens was designed and integrated on a simulated image sensor chip array using a UV-imprinting process. Finally, the optical performances were measured and analyzed.

• Journal of the Microelectronics and Packaging Society
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• v.15 no.4
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• pp.9-15
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• 2008

Microstructure and contact resistance of the Au-Sn solder joints were characterized after flip-chip bonding of the Au/Sn bumps processed by successive electrodeposition of Au and Sn. Microstructure of the Au-Sn solder joints, formed by flip-chip bonding at $285^{\circ}C$ for 30 sec, was composed of the $Au_5Sn$+AuSn lamellar structure. The interlamellar spacing of the $Au_5Sn$+AuSn structure increased by reflowing at $310^{\circ}C$ for 3 min after flip-chip bonding. While the Au-Sn solder joints formed by flip-chip bonding at $285^{\circ}C$ for 30 sec exhibited an average contact resistance of 15.6 $m{\Omega}$/bump, the Au-Sn solder joints reflowed at $310^{\circ}C$ for 3 min after flip-chip bonding possessed an average contact resistance of 15.0 $m{\Omega}$/bump.

• Transactions of the Korean Society of Automotive Engineers
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• v.21 no.1
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• pp.145-153
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• 2013

In this study, shear punch-creep (SP-Creep) at Sn-4Ag/Cu pad the joint was tested by using environment-friendly Pb-free solder alloy Sn-4Ag of electronic components. Pb eutectic alloy (Sn-37Pb) joints limited to environmental issues with reflow time (10sec, 30sec, 100sec, 300sec) according to two types of solder alloy joints are compared and evaluated by creep strain rate, rupture time and IMC (Intermetallic Compound) behavior. As the results, reflow time increases with increasing thickness of IMC can be seen at overall 100sec later in case of two solder joints on the IMC thickness of Sn-4Ag solder joints thicker than Sn-37Pb solder joints. In addition, when considering creep evaluation factors, lead-free solder alloy Sn-4Ag has excellent creep resistance more than Pb eutectic alloy. For this reason, the two solder joints, such as in the IMC (Cu6Sn5) was formed. However, the creep resistance of Sn-4Ag solder joints was largely increased in the precipitation strengthening effect of dispersed Ag3Sn with interface more than Sn-37Pb solder joints.

• Journal of the Microelectronics and Packaging Society
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• v.17 no.1
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• pp.1-7
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• 2010

Interfacial reaction characteristics of a Bi-10Cu-20Sb-0.3Ni Pb-free alloy on Cu pad was investigated by reflow soldering at $430^{\circ}C$. The thickness of interfacial reaction layers with respect to the soldering time was also measured. After the reflow soldering, it was observed that a $(Cu,Ni)_2Sb$, a $Cu_4Sb$ intermetallic layer, and a haze layer, which is consisted of Bi and $Cu_4Sb$ phases, were successively formed at the Bi-10Cu-20Sb-0.3Ni/Cu interface. The total thickness of the reaction layers was found to be linearly increased with increasing of the reflow soldering time up to 120 s. As the added Ni element did not participate in the formation of the thickest $Cu_4Sb$ interfacial layer, suppression of the interfacial growth was not observed.

• Journal of the Microelectronics and Packaging Society
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• v.19 no.3
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• pp.31-36
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• 2012

In this study, the complex vibration reliability of Sn-3.5Ag and Sn-0.7Cu having a high melting temperature was investigated. For manufacturing of BGA test samples, Sn-3.5Ag and Sn-0.7Cu balls were joined on BGA chips finished by ENIG and the chips were mounted on PCB finished OSP by using reflow process. For measuring of resistance change during complex vibration test, daisy chain was formed in the test board. From the results of resistance change and shear strength change, the reliability of two solder balls was compared and evaluated. During complex vibration for 120 hours, Sn-0.7Cu solder was more stable than Sn-3.5Ag solder in complex vibration test.