• Proceedings of the Korean Vacuum Society Conference
• /
• 1999.07a
• /
• pp.80-80
• /
• 1999

플라즈마 디스플레이 패널(PDP)의 공정을 간단히 하기 위하여 포토레지스트, ITO, 격벽재료를 Ar+ laser(λ-514 nm, CW)와 Nd:YAG laser(λ=532, 266nm, pulse)로 직접 패터닝 하였다. 레이저에 의한 포토레지스트의 패턴결과, 아르곤 이온 레이저의 포토레지스트 가공의 반응 메카니즘은 레이저 빔의 열에 의한 시료 표면의 국부적인 온도상승에 의한 용융작용이며, 그 결과 식각 후 형성된 패턴의 단면 모양도 레이저빔의 profile과 같은 가우시안 형태를 나타낸다. Nd:YAG 레이저의 4고조파(532nm)를 이용한 경우 200$\mu\textrm{m}$/sce의 주사속도에서 포토레지스트를 패턴하기 위한 임계에너지(threshold energy fluence) 값은 25J/cm2이며, 약 40J/cm2의 에너지 밀도에서 하부기판의 손상이 발생하기 시작하였다. 글미 1은 Nd:YAG 레이저 4고조파를 이용하여 포토레지스트를 식각한 경우 SEM 표면사진(위)과 단차특정기에 의한 단면형상(아래)이다. ITO 막의 레이저에 의한 직접 패턴 결과, ITO 막은 레이저 펄스에 의한 급속 가열 및 증발에 의한 메커니즘으로 식각이 이루어지며, 레이저 파장에 따른 광흡수 정도의 차이에 의해 2고조파 (532nm)에서 ITO 막의 가공 품질이 4고조파(266nm)에 비해 우수하며 패턴의 폭도 출력에 따라 제어가 용이하였다. 그림 2는 Nd:YAG 레이저 2고조파를 이용하여 ITO를 식각한 경우 SEM표면 사진(위)과 단차측정기에 의한 단면형상(아래)이다. 격벽 재료의 레이저에 의한 직접 패턴 결과, Ar+ 레이저(514nm)는 출력 밀도 32NW/cm2에서 격벽을 유리 기판의 경계면까지 식각하였다. Nd:YAG 레이저(532nm)는 laser fluence가 6.5mJ/cm2에서 격벽을 식각하기 시작하였으며, 19.5J/cm2에서 유리기판의 rudraus(격벽 두께 130$\mu\textrm{m}$)까지 식각하였다.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2004.05a
• /
• pp.155-155
• /
• 2004

최근 집중 육성산업으로 분류되어 연구 및 투자가 되고 있는 반도체, 정보통신, 바이오산업, 디스플레이 등에서 초정밀화와 저비용, 대량생산을 하기 위해서 기존의 공정을 대체할 수 있는 새로운 나노공정기술의 요구가 급증하고 있다 최근에는 극초단파 특성으로 인하여 극미세 형상을 가공할 수 있는 펨토초 레이저(femto second laser)를 나노공정에 적용하는 다양한 연구가 진행되고 있다. 특히, 기존의 쾌속조형공정을 응용하여 다른 공정으로는 제작이 불가능한 나노 스케일에서 3차원 자유곡면을 가지는 구조물을 제작할 수 있는 공정개발에 대하여 다양한 연구가 진행되고 있다.(중략)

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.45 no.11
• /
• pp.8-12
• /
• 2008

For the reduction of fabrication cost and process time of AC plasma display panel (PDP), indium tin oxide (ITO) layer was patterned as bus electrode using Nd:$YVO_4$ laser. In comparison with the chemically wet etched ITO patterns, laser ablated ITO patterns showed the formation of shoulders and ripple-like structures at the edge of the ITO lines. For the reduction of shoulders and ripple-like structures, pulse repetition rate and scan velocity of laser was changed. In addition, we analyzed a discharge characteristic of PDP test panel to observe how the shoulders and ripple-like structures influence on the PDP. Based on experimental results, the pattern etched at the 500 mm/s and 40 kHz was better than any other condition. From this experiment we could see the possibility of the laser direct patterning for the application to the patterning of ITO in AC-PDP.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2018.06a
• /
• pp.34-34
• /
• 2018

레이저를 통한 플라스틱 일체형 회로형성 기술은 레이저 직접 성형 (Laser Direct Structuring, LDS) 기술과 도금기술을 이용하여 기판 표면에 전도성 회로 패턴을 형성하고 소자를 집적하여 부품을 제작하는 기술이다. 종래에는 PCB 기반의 평면기판을 기반으로 하여 제작된 소자와 부품이 전자제품의 주를 이루었으나, 최근 소자의 집적화와 제품 디자인의 유연화(flexible)로 굽힘(bendable) 형태의 스마트 시계와 같은 웨어러블(wearable) 전자 제품이 출시되었으며, 레이저를 통한 플라스틱 일체형 회로형성 기술은 미래 사회의 주를 이룰 웨어러블 형태의 제품의 상용화를 가능하게 할 뿐만 아니라 회로 집적이 가능하여 제품 혁신을 주도할 기술로 주목 받고 있다. 본 연구에서는 LDS 부품의 미세 회로 구현을 위한 공정 기술 개발에 있어서 고생산성 무전해 동도금액 및 부품 실장을 위한 표면처리 기술 개발에 대한 결과를 보고한다. 미세 회로 패터닝 기술의 상용화를 위해서는 도금액의 안정성뿐만 아니라 고속 공정기술이 필요하다, 현재 국내 무전해 동 도금의 석출 속도는 시간 당 $4{\sim}5{\mu}m$ 내외이기 때문에, 생산성을 향상시키기 위해서는 시간 당 $10{\mu}m$ 정도의 고속 무전해 동 도금 공정 개발 필요하다.

• Journal of the Korean Society for Precision Engineering
• /
• v.17 no.11
• /
• pp.191-198
• /
• 2000

Laser direct patterning of the coated photoresist (PMER-NSG31B) layer was studied to make halftone dots on gravure printing roll. The selective laser hardening of photoresist by Ar-ion laser(wavelength: 333.6~363.8nm) was controlled by the A/O modulator. The coating thickness in the range of 5~11$\mu m$ could be obtained by using the up-down directional moving device along the vertically located roll. The width, thickness and hardness of the hardened lines formed under the laser power of 200~260㎽ and irradiation time of 4.4~6.6 $\mu$sec/point were investigated after developing. The hardened width increased as the coating thickness increased. Though the hardened thickness was changed due to the effect of the developing solution, the hardened layer showed good resistance to the scratching of 2H pencil. Also, the hardened minimum line widths of 10$\mu m$ could be obtained. The change of line width was also found after etching, and the minimum line widths of 6$\mu m$ could be obtained. The hardened lines showed the good resistance to the etching solution. Finally, the experimental data could be applied to make gravure halftone dots using the developed imaging process, successfully.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.25 no.5
• /
• pp.377-380
• /
• 2012

Laser direct patterning of indium tin oxide(ITO) is one of new methods of direct etching process to replace the conventional photolithography. A diode pumped Q-switched Nd:$YVO_4$ (${\lambda}$= 1,064 nm) laser was used to produce ITO electrode on various transparent oxide semiconductor films such as zinc oxide(ZnO). The laser direct etched ITO patterns on ZnO were compared with those on glass substrate and were considered in terms of the overlapping rate of laser beam. In case of the laser etching on double-layer, it was possible to obtain the higher overlapping rate of laser beam.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.13 no.11
• /
• pp.969-975
• /
• 2000

Laser direct writing of micro-patterned copper lines has been achieved by pyrolytic decomposition of copper formate films (Cu(HCOO)$_2$.4$H_2O$), as a metallo-organic precursor, using a focused CW Ar$^{+}$ laser beam (λ=514nm) on PCB boards and glass substrates. The linewidth and thickness of the lines wee investigated as a functin of laser power and scan speed. The profiles of the lines were measured by scanning electron microscope (SEM), surface profiler ($\alpha$-step) and atomic force measured by scanning electron microscope (SEM), surface profiler ($\alpha$-step) and atomic force microscopy (AFM). The electrical resistivities of the patterned lines were also investigated as a function of laser parameters using probe station and semiconductor analyzer. We compared resistivities of the patterned copper lines with these of the Cu bulk. Resistivities decreased due to changes in morphology and porosity of the deposit, which were about 3.8 $\mu$$\Omega$cm and 12$\mu$$\Omega$cm on PCB and glass substrates after annealing at 30$0^{\circ}C$ for 5 minutes.s.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1999.05a
• /
• pp.99-102
• /
• 1999

A mixture which was made from organic gel, glass powder and ceramic powder was masklessly etched for fabrication of barrier rib of PDP(Plasma Display Panel) by focused Ar$^{+}$ laser( λ =514 nm) and Nd:YAG(λ =532, 266 nm) laser irradiation at the atmosphere. The depth of the etched grooves increases with increasing a laser fluence and decreasing a scan speed. Using second harmonic of Nd:YAG laser, the threshold laser fluence was 6.5 mJ/$\textrm{cm}^2$ for the sample of PDP barrier rib softened at 12$0^{\circ}C$. The thickness of 130 ${\mu}{\textrm}{m}$ of the sample on the glass was clearly removed without any damage on the glass substrate by fluence of 19.5 J/$\textrm{cm}^2$....

• Korean Journal of Metals and Materials
• /
• v.48 no.2
• /
• pp.163-168
• /
• 2010

We here describe the laser-direct patterning of nanostructured metal thin films. This method involves light-matter interaction in which a pulsed laser beam impinging on the film generates a thermoelastic force that plays a role to detach the film from the substrate or underlying layers. A moderate cohesion of the nanostructured film enables localized desorption of the material upon irradiation by a spatiallymodulated laser beam, giving good fidelity with the transfered pattern. This photoresist-free process provides a simple high-resolution scheme for patterning metal thin films.

• Journal of the Microelectronics and Packaging Society
• /
• v.30 no.2
• /
• pp.65-70
• /
• 2023

Nanoimprint lithography (NIL) has attracted much attention due to its process simplicity, excellent patternability, process scalability, high productivity, and low processing cost for pattern formation. However, the pattern size that can be implemented on metal materials through conventional NIL technologies is generally limited to the micro level. Here, we introduce a novel hard imprint lithography method, extreme-pressure imprint lithography (EPIL), for the direct nano-to-microscale pattern formation on the surfaces of metal substrates with various thicknesses. The EPIL process allows reliable nanoscopic patterning on diverse surfaces, such as polymers, metals, and ceramics, without the use of ultraviolet (UV) light, laser, imprint resist, or electrical pulse. Micro/nano molds fabricated by laser micromachining and conventional photolithography are utilized for the nanopatterning of Al substrates through precise plastic deformation by applying high load or pressure at room temperature. We demonstrate micro/nanoscale pattern formation on the Al substrates with various thicknesses from 20 ㎛ to 100 mm. Moreover, we also show how to obtain controllable pattern structures on the surface of metallic materials via the versatile EPIL technique. We expect that this imprint lithography-based new approach will be applied to other emerging nanofabrication methods for various device applications with complex geometries on the surface of metallic materials.