• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.9
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• pp.576-580
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• 2016

Single-layered transition metal dichalcogenides (TMDs) exhibit more interesting physical properties than those of bulk TMDs owing to the indirect to direct bandgap transition occurring due to quantum confinement. In this research, we demonstrate that layer-by-layer laser etching of molybdenum diselenide ($MoSe_2$) flakes could be controlled by varying the parameters employed in laser irradiation (time, intensity, interval, etc.). We observed a dramatic increase in the photoluminescence (PL) intensity (1.54 eV peak) after etching the samples, indicating that the removal of several layers of $MoSe_2$ led to a change from indirect to direct bandgap. The laser-etched $MoSe_2$ exhibited the single $MoSe_2$ Raman vibration modes at ${\sim}239.4cm^{-1}$ and ${\sim}295cm^{-1}$, associated to out-of-plane $A_{1g}$ and in-plane ${E^1}_{2g}$ Raman modes, respectively. These results indicate that controlling the number of $MoSe_2$ layers by laser etching method could be employed for optimizing the performance of nano-electronic devices.

• Korean Journal of Optics and Photonics
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• v.3 no.4
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• pp.258-265
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• 1992

A low loss optical waveguide of $P_{2}O_{5}-SiO_{2}$on Si substrate is produced by using the chemical vapour deposition method of $SiO_2$ thin films used in Si technology. Propagation loss of the waveguide layer was 1.65 dB/cm as produced and reduced down to 0.1 dB/cm after heat treatment at $1100^{\circ}C$. By using laser lithography and reactive ion etching method $P_{2}O_{5}-SiO_{2}$ waveguide was produced and subsequently annealed at $1100^{\circ}C$.As a result of this annealing the shape of the waveguide core was changed from rectangular to semi-circular form, and the propagation loss was reduced as down to 0.03 dB/cm at 0.6328$\mu$m and 0.04dB/cm at 1.53$\mu$m. We think that the mechanism of the reduction in propagation loss during the heat treatment is the following: 1) The hydrogen bonding in waveguide layer, which causes absorption loss, is dissociated and diffused out. 2) The roughness of the interface and the micro-structure of the waveguide layer is removed. 3) The irregularities in the cross-sectional shape of the waveguide which was induced during the lithographic process were disappeared by flowing of the waveguide core.

• Korean Journal of Optics and Photonics
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• v.15 no.5
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• pp.469-474
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• 2004

We have fabricated and designed wavelength-tunable sampled grating distributed Bragg reflector laser diodes(SGDBR-LD) by using, for the first time, planar buried heterostructures(PBH). The diodes have low threshold current values and high-performance of laser operation. Growth condition using metal organic chemical vapor deposition(MOCVD) was optimized for the formation of a good butt-coupling at the interface. A maximum output power of the fabricated device was 20 mW under 200 mA continuous wave(CW) operation at $25^{\circ}C$. Average threshold current and voltage were 12 mA and 0.8 V, approximately. This output power is higher than those of ridge waveguide(RWG) and buried ridge stripe(BRS) structures by amounts of 9 mW and 13 mW, respectively. We obtained a tuning range of 44.4nm which is well matched with the target value of our design. The side mode suppression ratio of more than 35 dB was obtained for the whole tuning range. Optical output power variation was less than 5 dB, which is 4 dB smaller than that of RWG structures.

• Korean Journal of Optics and Photonics
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• v.8 no.6
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• pp.510-515
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• 1997

Packaging takes an extremely important element of optical module cost due primarily to the added complication of alignment between semiconductor devices and optical fiber, and many efforts have been devoted on reducing the cost by eliminating the complicated optical alignment procedures in passive manner. In this study, we fabricated silicon optical benches on which the optical alignments are accomplished passively. To improve the positioning accuracy of a flip-chip bonded LD, we adopted fiducial marks and solder dams which are self-aligned with V-groove etch patterns, and a stand-off to control the height and to improve the heat dissipation of LD. Optical sub-assemblies exhibited an average efficiency of -11.75$\pm$1.75 dB(1$\sigma$) from the LD-to-single mode fiber coupling and an average sensitivity of -35.0$\pm$1.5 dBm from the fiber and photodetector coupling.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.59 no.12
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• pp.2218-2224
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• 2010

Dye-sensitized solar cell (DSC) is a promising alternative solar cell to the conventional silicon solar cell due to several advantages. Development of large scale module is necessary to commercialize the DSC in the near future. A scribing technology of the transparent conductive oxide (TCO) is one of the important technologies on the fabrication of DSC module. A quality of the scribed line on the TCO has a decisive effect on the efficiency of DSC module. Among several scribing technologies, the fiber laser is a suitable for scribing the TCO more precisely and accurately because of their own characteristics. In this study, we try to improve the quality of the TCO scribed line by using the fiber laser. Consequently, the operating parameter of fiber laser is optimized to get the TCO scribed line with good quality. And the fiber laser scribing technology of the TCO is applied to the fabrication of the DSC with optimal operating parameter, operating current 3900mA. As a result, the current density and fill factor are improved and the total efficiency is increased because the internal resistances of DSC such as TCO sheet resistance and the resistance concerned to the electron movement in the $TiO_2$ are reduced. This is analyzed by the electrochemistry impedance spectroscopy (EIS) and the equivalent circuit model of the DSC.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.6
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• pp.526-532
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• 2000

The paste on the glass or fabrication of the PDP(Plasma Display Panel) barrier rib was selectively etched using focused A $r_{+}$ laser(λ=514 nm) and Nd:YAG(λ=532, 266 nm) laser irradiation. The depth of the etched grooves increase with increasing a laser fluence and decreasing a laser beam scan speed. Using second harmonic of Nd:YAG laser(532 nm) the etching threshold laser fluence was 6.5 mJ/c $m^2$ for the sample of PDP barrier rib. The thickness of 180 ${\mu}{\textrm}{m}$ of the sample on the glass was clearly removed without any damage on the glass substrate by fluence of 19.5J/c $m^2$beam scan speed of 20${\mu}{\textrm}{m}$ /s. In order to increase the etch rate of the barrier rib material barrier rib samples heated by a resistive heater during laser irradiation. The heated sample has many defects and becomes to be fragile. This imperfection of the structure compared to the sample without heat treatment allows the effective etching by the focused laser beam. The etch rates were 65${\mu}{\textrm}{m}$/s and 270 ${\mu}{\textrm}{m}$/s at room temperature and 20$0^{\circ}C$, respectively.y.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.26 no.1
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• pp.47-53
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• 2015

In this paper, a novel fluid controlled phase tunable line using inkjet printed microfluidic composite right/left-handed(CRLH) transmission line(TL) is proposed. A CRLH-TL prototype has been inkjet-printed on a paper substrate using silver nano particle ink. In addition, a laser-etched microfluidic channel in poly methyl methacrylate(PMMA) has been integrated with the CRLH TL using inkjet-printed SU-8 as a bonding material. The proposed TL provides excellent phase-tuning capability that is dependent on the different fluidic materials used. As the fluid is changed, the proposed TL can have negative-phase, zero-phase, and positive-phase characteristics at 900 MHz and reflection coefficient is maintained to below -10 dB. The performance of the proposed TL is successfully validated using simulation and measurement results.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.27 no.2
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• pp.123-130
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• 2016

In this paper, a novel flexible microfluidic metamaterial absorber is proposed for remote chemical sensor applications. The proposed metamaterial absorber consists of a periodic of split-ring-cross resonators(SRCRs) and a microfluidic channel. The SRCR patterns are inkjet-printed using silver nanoparticle inks on paper. The microfluidic channels are laser-etched on polydimethylsiloxane(PDMS) material. The proposed absorber can detect change of the effective permittivity at different liquids. Therefore, the absorber can be used for a remote chemical sensor by detecting change of the resonant frequencies. The performance of the proposed absorber is demonstrated with full-wave simulation and measurement results. The experimental results shows that the resonant frequency is 10.49 GHz at the empty channel. When ethanol and DI-water are injected into the channel, the resonant frequencies are 10.04 GHz and 8.9 GHz, respectively.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.5
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• pp.396-401
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• 1999

In this study, $Ar^+$ ion laser etching process of single/poly-crystalline Si with $CCl_2F_2$ gas is investigated for MEMS applications. In general, laser direct etching process is useful in microelectronic process, fabrication of micro sensors and actuators, rapid prototyping, and complementary processing because of the advantages of 3D micromachining, local etching/deposition process, and maskless process with high resolution. In this study, a pyrolytic method, in which $CCl_2F_2$ gasetches molten Si by the focused laser, was used. In order to analyze the temperature profile of Si by the focused laser, the 3D heat conduction equation was analytically solved. In order to investigate the process parameters dependence of etching characteristics, laser power, $CCl_2F_2$ gas pressure, and scanning speed were varied and the experimental results were observed by SEM. The aspect ratio was measured in multiple scanning and the simple 3D structure was fabricated. In addition, the etching characteristics of $6\mum$ thick poly-crystalline Si on the insulator was investigated to obtain flat bottom and vertical side wall for MEMS applications.

• Proceedings of the Korean Institute of Navigation and Port Research Conference
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• 2009.06a
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• pp.467-470
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• 2009

A novel 8 V DC power source with an external series-parallel connection of 50 Dye-Sensitized Solar Cells(DSSCs) has been proposed. One DSC has the optimized length to width ratio of $5.2{\times}2.6$ cm and an active area 8 $cm^2$($4.62{\times}1.73$ cm) which attained a conversion efficiency of 4.2%. From the electrochemical impedance spectroscopic analysis, it was found that the resistance elements related to the Pt electrode and electrolyte interface behave like that of diode and the series resistance corresponds to the sum of the other resistance elements. In addition, the TEMoo mode pulsed Nd:YAG laser beam is used to improve the incident photon to current efficiency(IPCE) of DSSC. From this result, this novel 8V-0.38A DC power source shows stable performance with an energy conversion efficiency of about 4.5% under 1 sun illumination(AM 1.5, Pin of 100 $mW/cm^2$).