• KIPE Magazine
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• v.14 no.1
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• pp.21-25
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• 2009

전력반도체소자는 1947년 트랜지스터의 출현으로 반도체시대가 도래한 이후 사이리스터, MOSFET 및 IGBT 등으로 발전하였다. 개발당시에는 10A 정도의 전류처리 능력과 수백V 정도의 진압저지능력을 가지고 있었지만, 현재에는 정격전류로는 약 8,000A, 정격전압으로는 무려 12kV 급까지 발전되었다. 그러나 전력반도체 소자의 대부분은 실리콘을 윈료로 제작되고 있으며 현재 실리콘의 물성적 한계에 직면하여 고전압, 저손실 및 고속 스위칭화에 대한 새로운 도전이 시작되고 있다. SiC 전력용 반도체는 실리콘 반도체의 이론적 물성한계를 극복할 수 있는 소재로서 80년대 이후 각광받아 왔다. 하지만 대구경의 단결정 웨이퍼 및 저결함의 에피박막의 부재로 90년대 중반까지는 가능성 있는 재료로서만 연구되었다. 90년대 중반 단결정 웨이퍼가 상용화된 이후 단결정 웨이퍼의 대구경화 및 저결함화가 급속히 진전되어 전력용 반도체 소자의 개발도 활기를 띄게 되었다. 본 기고에서는 탄화규소 반도체소자의 기술동향에 대해 소개하고자 한다.

• The Journal of the Acoustical Society of Korea
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• v.37 no.4
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• pp.174-180
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• 2018

In this study, the propagation characteristics of Lamb waves in anisotropic silicon wafers of (100) and (111) direction were investigated by PVDF (Polyvinylidene Fluoride) line-focused transducer. The modified V(f,z) method was used because the Lamb waves are dispersive. For confirming the anisotropy, a line-focused transducer was used and the silicon wafer was rotated 180 degrees at intervals of 1 degree. As a result, $A_0$ and $S_0$ modes were observed. The speed of $S_0$ mode according to propagation direction showed anisotropy which is associated with the crystal structure, and the speed of $A_0$ mode was isotropic. The result is consistent with the crystal structure of silicon and the mechanism of vibration of each Lamb wave modes.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.17 no.6
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• pp.708-714
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• 2016

In today's semiconductor industry, manufacturing technology is being developed for the purpose of processing large amounts of data and improving the speed of data processing. The packaging process in semiconductor manufacturing is utilized for the purpose of protecting the chips from the external environment and supplying electric power between the terminals. Nowadays, the WLP (Wafer-Level Packaging) process is mainly used in semiconductor manufacturing because of its high productivity. All of the silicon dies on the wafer are subjected to a high pressure and temperature during the molding process, so that die shift and warpage inevitably occur. This phenomenon deteriorates the positioning accuracy in the subsequent re-distribution layer (RDL) process. In this study, in order to minimize the die shift, a vision inspection system is developed to collect the die shift measurement data.

• Transactions of the Korean Society of Machine Tool Engineers
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• v.11 no.5
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• pp.58-64
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• 2002

Mirror surface finish of Si-wafers has been achieved by rotary in-feed machining with cup-type wheels in ELID grinding. But the diameter of the workpiece is limited with the diameter of the grinding wheel in the in-feed machining method. In this study, some finding experiments by the rotary surface grinding machine with straight type wheels were conducted, by which the possible grinding area of the workpiece is independent of the diameter of the wheels. For the purpose of investigating the grinding characteristics of large scale diametrical silicon wafer, grinding conditions such as rotation speed of grinding wheels and revolution of workpieces are varied, and grinding machine used in this experiment is rotary type surface grinding m/c equipment with an ELID unit. The surface ground using the SD8000 wheels showed that mirror like surface roughness can be attained near 2~6 nm in Ra.

• Korean Journal of Optics and Photonics
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• v.24 no.4
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• pp.184-188
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• 2013

Two types of polymer-based optical splitters with $200{\mu}m$ large core are presented for optical multimode networks, such as smart home networks, intelligent automotive networks, etc. Optical splitters that have 1:1 symmetric and 9:1 asymmetric structure were fabricated by a ultra violet(UV)-imprint technology using a deep etched Si(silicon) master by the Bosch process. In this paper, we successfully fabricated the symmetric and asymmetric optical splitters with suitable optical network applications.