• Proceedings of the Korea Association of Crystal Growth Conference
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• 1996.06b
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• pp.239-257
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• 1996

$\beta$-BaB2O4는 고출력 가시광선 및 적외선을 발진시키는데 유용한, 비선형 특성을 가진 물질이다. $\alpha$-$\beta$ 상전이 온도가 녹는점보다 18$0^{\circ}C$ 낮기 때문에 보통 flux법으로 단결정을 성장시킨다. 수년전 Itoh등은 $\beta$-BaB2O4단결정을 congruent조성의 용액으로부터 Czochralski법으로 metastable한 상태에서 직접 성장시켰다. 그렇지만 그 공정은 잘 이해되지 않고 있으며 재현하기가 매우 어렵다. 저자들은 $\beta$-BaB2O4단결정을 용액표면온도도 1034$^{\circ}$-1085$^{\circ}C$, pulling rate 3mm/h, 10-30 rpm의 범위에서 성장시켰으며 융액표면의 온도구배는 $\beta$-상으로 성장시키는데 매우 중요한 인자로 여겨진다. Seed로는 직경 1-2mm의 c축방향 $\beta$-BaB2O4단결정 봉이 상용되어 성장방향을 조절하고 열응력을 최소화시켰다. 성장된 $\beta$-상의 단결정들은 6-fold모양을 하며 표면에 작은 비늘같은 것들이 붙어있고 중심부에 core가 있는 것을 알았다. Flux법으로 성장시킨 $\beta$-BaB2O4단결정을 사용한 seeds는 단결정 성장 및 냉각 중에 cracks이 자주 발생하였으며, boule의 cracks은 afterheater를 사용할 경우 다소 줄일 수 있었다. 성장된 단결정의 광학특성이 측정되었다.

• Korean Journal of Crystallography
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• v.17 no.2
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• pp.66-85
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• 2006

수열법으로 압전수정, 방해석 및 산화아연 단결정을 성장하고 각종 결함 및 성장된 단결정의 구조적, 화학적, 물리적 특성을 고찰하였다. 수열법은 직접 용융법으로 단결정을 성장할 수 없는 재료의 결정 성장에 많이 이용되며 수정의 경우, 융액의 점도가 매우 높고 유리화하는 성질이 있어 직접 용융으로 단결정을 성장할 수 없다. 방해석과 산화아연의 경우 용융하였을 때 분해되기 때문에 직접 용융법으로 단결정을 성장할 수 없어 수열법이 사용된다. 본 고찰에서는 수열법의 성장 원리와 성장 방법, 결함 검출 방법 및 물리적, 화학적 특성 측정 등을 다루었으며 또한 산업화 적용에 대하여 다루었다.

• Korean Journal of Crystallography
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• v.3 no.1
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• pp.23-30
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• 1992

a-SiC crystals were grown on the (001) plane of a-SiC seed crystals by sublimation method to find effects of pressure-reduction rate of the crystal growth furnace own the growth rate and orientstion of grown SiC crystals. Pressure-reduction rate at the initial growth stage affected the crystallinity of grown SiC crystals. In case of high pressure-reduction rate, growth rate was high and 3csic polycrystalline was grown on the seed. On the other hand, low pressure-reduction rate caused the growth rate to be slow and 6H-SiC single crystal was grown on the seed. However, even after growing SiC for 2 hours under the condition in which.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.3
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• pp.85-88
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• 2001

High oxygen pressure has been applied for a floating zone (FZ) crystal grower in order to grow high quality $TiO_2$(rutile) single crystals suitable for optical application. The $TiO_2$ crystals, grown under 0.3, 0.4, 0.5, and 0.8MPa oxygen pressure respectively, are all transparent and dark blue. The degree of the presence of sub-grain boundary in the crystal differs from the applied oxygen pressure. In particular, $TiO_2$ single crystals grown under0.5 MPa showed sub-grain boundary-free and estimated good for optical devices.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.23 no.6
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• pp.279-282
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• 2013

Recently, it has been interested much that AlN (Aluminum Nitride) crystals can be applied to UV LEDs and high power devices as like GaN and SiC crystals. The reports about commercial grade of AlN wafers in the world have been absent, however several results for growth of large size of AlN single crystals have been reported from abroad. In this report, the result of AlN single crystals of a diameter of about 8 mm grown are reported. Optical microscopic characterization was applied to observe the form of the crystals and the crystal quality was evaluated by FWHM measurement by DCXRD rocking curve analysis.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.3
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• pp.325-335
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• 1994

The spinel $MgO.Al_20_3$ single crystals were grown by FZ (floating zone) method. Its melting point is about, $2135^{\circ}C$ and is important to the process of the growth from the melt. There have been some reports of the growth by Czochralski and Verneuil method. However, this study is the first trial to the spinel crystal with the application of FZ method. In this study, $MgAl_2O_4$ spinel crystals were grown by using FZ method which uses the ellipsoidal mirror furnace having infrared halogen lamps as a heat source. With dopants of transition metal ions, it was possible to melt the feed rod which does not absorb the infrared rays due to the transparent properties to infrared ray of spinel itself and the red, green and blue colored spinel single crystals could be grown more easily. As a conclusion, the purpose of this study is to find the spinel single crystal growth mechanism with respect to th growth interfaces and molten zone stability and to characterize the state of growth resulting from the concavity to the melt of interfaces.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.34 no.2
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• pp.61-65
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• 2024

HVPE (Hydride vapor phase epitaxy) is a method of manufacturing thin films or single crystals using gaseous raw materials. This is a method that applies the principles of chemical vapor deposition to grow a single crystal of a material with low meltability or high melting point, and is one of the methods that can obtain a gallium nitride (GaN) single crystal. Recently, much research has been conducted to grow aluminum nitride (AlN) single crystals using this method, but good results have not yet been obtained. In this study, we attempted to grow AlN single crystals using the HVPE method. Nitrogen was used as a carrier gas in the growth process, and the growth results according to changes in the amount of nitrogen (N₂) were examined. Changes in growth crystals as the amount of nitrogen increased were confirmed. The shape of the grown AlN single crystal was observed using an optical microscope, and the rocking curve was measured using double crystal X-ray diffractometry (DCXRD) to confirm the creation of the AlN crystal. The crystallinity of single crystals was also investigated.

• Journal of the Korean Vacuum Society
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• v.1 no.3
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• pp.353-359
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• 1992

본 연구에서는 HWE 방법에 의하여 GaAs(100) 기판위에 입방정의 단결정 박막을 성장하였다. 성장된 CdS 단결정 박막의 결정구조와 방향을 ECP(electron channeling pattern)로 결정하였다. CdS 박막의 (400)면이 기판과 평행하게 성장됨을 알았다. CdS 박 막의 photoluminescence를 20K에서 측정하였는데, free exception, bound exception 및 donor-acceptor pair에 의한 발광이 관측되었다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.2
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• pp.54-58
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• 2014

AlN (Aluminum Nitride) crystals were grown by a PVT (Physical Vapor Transport) method and were characterized to phases on the growth temperature. The crystals phase and morphology were analyzed using an optical stereo-microscope and the optimum temperature for the growing was determined. In this report, the characteristics of the AlN crystals grown at various temperatures were reported.

• Proceedings of the Optical Society of Korea Conference
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• 2000.02a
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• pp.236-237
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• 2000

용액인상법에 의하여 Cr$^{3+}$ 이온이 0.1-0.2% 주입된 Alexandrite (Cr$^{3+}$ :BeAl$_2$O$_4$) 단결정을 성장하고, 성장한 단결정을 이용하여 레이저 소자를 제조하였다. 고품질의 단결정을 성장할 수 있는 결정성장조건을 규명하고, Cr$^{3+}$ 이온의 유효편석 계수를 계산하였으며, 결정 결함 및 분광 물성을 조사하였다. 결정성장 실험 결과, 유속 3 1/min의 질소분위기, 이리듐 도가니 및 <001>방위의 Alexandrite 단결정을 종자결정으로 사용하여 결정을 성장하는 경우 최적의 결정성장 조건은 인상속도 0.5-1.0 mm/hr와 회전속도 20-25 rpm이었다. 육성된 결정은 (100)면이 넓게 발달되었으며, (120)과 (010)면이 측면에 발달되는 판상의 직팔각기둥의 형태로 성장되었다. 결정결함으로써 parasite crystal의 형성과 경계면의 균열, striation, inclusion 등이 검출되었다. Alexandrite 단결정 내에 분포하는 Cr$^{3+}$ 이온의 유효편석계수 k$_{eff}$는 2.8로 계산되었다. 분광물성으로써 실온에서의 $^4$A$_2$$\longrightarrow$$^4$T$_2$(689.6-489.3 nm), $^4$A$_2$$\longrightarrow$$^4$T$_1$(489.3-311.33m) 천이에 의한 흡수를 확인하고, $^4$T$_2$$\longrightarrow$$^4$A$_2$(650-800 nm), $^2$E$\longrightarrow$$^4$A$_2$에 의한 nophonon line R$_1$, R$_2$(680.4, 678.5 nm) 및 $^2$T$_1$$\longrightarrow$$^4$A$_2$(655.7, 649.3, 645.2 nm)의 형광방출 스펙트럼을 얻었으며, 형광수명은 0.264 ms로 조사되었다. 제조된 레이저 발진봉은 직경 6.3 m, 길이 45 nm이었다.