• Title/Summary/Keyword: 다이오드 모델

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A Study on Implementation of Transient Radiation Effects on Electronics(TREE) Assessment System (전자소자의 과도방사선피해 평가체계 구축 연구)

  • Lee, Nam-Ho;Hwang, Young-Gwan;Kim, Jong-Ryul;Jeong, Sang-Hun;Oh, Seung-Chan
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.16 no.10
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    • pp.2329-2334
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    • 2012
  • In this paper, we performed a study of damage assessment model development to analyze the initial nuclear pulse radiation damage to semiconductor devices for military weapon systems. At first we modeled(M) the nuclear pulse radiation and diode device, and simulated(S) the output characteristics of the device to the input. Then the manufactured diodes which had the same characteristics with the modeled one were irradiated to the similar pulsed type radiation and their output signals were measured simultaneously. Error between the M & S results and the measured values of the analysis was 22.9%. Through the error value we could confirm that the damage assessment model simulated the TREE effects with a quite accuracy.

Analysis of MQW LD dynamics using an approximate carrier transport model (근사화된 캐리어 이동 모델을 이용한 MQW LD의 동적 특성 해석)

  • 구자용;최우영
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.35D no.11
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    • pp.38-45
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    • 1998
  • A new set of MQW LD rate equations is proposed that include the interwell carrier transport effect assuming it is dominated by holes. Solving the rate equations, the DC transient response of MQW was obtained and it was shown that uneven carrier concentrations exist due to the interwell carrier transport effect. In addition, it was found that the large number of quantum wells can limit the LD modulation speed and InGaAlAs barriers with smaller valence band offsets can have larger modulation speeds. It is expected that the proposed rate equations can find useful applications in designing the optimal MQW LD structures for high speed applications.

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Input Current Characteristics of a Three-Phase Diode Rectifier with Capacitive Filter under Line Voltage Unbalance Condition (커패시터 필터를 갖는 3상 다이오드 정류회로의 불평형전원에서의 입력전류 특성)

  • 정승기;이동기;박기원
    • The Transactions of the Korean Institute of Power Electronics
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    • v.6 no.4
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    • pp.348-361
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    • 2001
  • The three-phase diode rectifier with capacitive filter is highly sensitive to line voltage unbalance. Because of its inherent nonlinear characteristics, small line voltage unbalance may cause highly unbalanced line current, causing detrimental effects on power quality. This paper presents a theoretical basis on this 'unbalance amplification effect' and derives an analytical model of line current characteristics under unbalanced line voltage condition for various modes of operation. The results provide a basic guideline for optimal design of a three-phase diode rectifier with capacitive filter that is most commonly used for interfacing various power conversion equipments to power lines.

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Travelling wave model analysis of absorptive bistable laser diode (쌍안정 레이저 다이오드의 진행파형 모델 해석)

  • 서재원;박동욱
    • Proceedings of the Optical Society of Korea Conference
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    • 2000.02a
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    • pp.276.1-277
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    • 2000
  • Absorptive bistable laser diode was analyzed by using traveling wave model in conjunction with the finite-difference method. Carrier and photon density distributions were calculated and the output characteristics were obtained. The results for both the steady-state and transient (switching) cases were compared with those of the rate equation approach.

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A Study on the Radiative Recombination Coefficients based on the two band model in Light Emitting Diodes (2-밴드 모델을 이용한 발광다이오드의 발광 재결합계수에 대한 이론적 고찰)

  • Kim, Hyeon-Seong;Sim, Jong-In
    • Proceedings of the Optical Society of Korea Conference
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    • 2008.02a
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    • pp.365-366
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    • 2008
  • The spontaneous emission spectrum and the radiative recombination coefficient were analytically derived from the two band model for both the bulk (3-D) and the quantum well(2-D) structures of GaN-based Wurtzite crystal.

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A Study on the analytical derivation of the L-I-V characteristics for a SCH QW Laser Diode (SCH 양자우물 레이저 다이오드에 대한 L-I-V 특성의 해석적도출에 관한 연구)

  • Park, Ryung-Sik;Bang, Seong-Man;Sim, Jae-Hun;Seo, Jeong-Ha
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.39 no.3
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    • pp.9-19
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    • 2002
  • By using the thermionic emission model, the L-I-V(power-current-voltage) characteristics of a SCH(seperate confinement heterostructure) QW(quantum well) laser diode is analytically derived. We derived the relationships between the bulk carrier density of SCH regions and the confined carrier density of QW. The L-I-V characteristics is derived analytically by using current continuity equations. Solving the ambipolar diffusion equation under the condition of high level injection and charge neutrality, the current distribution in the SCH regions is considered. Results showed that the major factor affecting the laser I-V characteristics was the change of potential barrier at the cladding-SCH interface. Also the series resistance of a laser diode was decreased and the carrier injection was increased by increasing the forward flux of injection current from cladding to SCH region.

Analysis of Wavelength Conversion Characteristics in SSGDBR Laser Diode (SSGDBR 레이저 다이오드의 파장변환 특성 해석)

  • Kim, Su-Hyun;Chung, Young-Chul
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.36D no.2
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    • pp.81-89
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    • 1999
  • Among various wavelength conversion technologies, that using the cross-gain modulation in laser diode makes it possible to deal with the high speed signal quite simply and efficiently. In this paper, presented was the applicability of an improved time-domain large-signal dynamic model as a CAD tool to analyzed the characteristics of SSGDBR(Superstructure Grating Distributed Bragg Reflector) laser diodes used for wavelength converters. Using this model, it was shown that this kind of wavelength converter can provide the widely tunable wavelength conversion of the high speed data above 10 Gbps. We also investigated the effect of input optical power and the bias current on the characteristics of the device such as extinction ration and eye diagram. The modeling results show very similar trend to the experimental reports.

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Modeling of Organic Schottky Diodes for Circuit Simulations (회로 시뮬레이션을 위한 유기물 쇼트기 다이오드 모델링)

  • Kim, Hyo-Jong;Baatar, Nyambayar;Kim, Shi-Ho
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.47 no.6
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    • pp.7-12
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    • 2010
  • A semi-empirical organic schottky diode model is proposed for circuit simulation. We have set up a full custom design environment for organic schottky diode circuit using Spectre AHDL, which is widely used commercial EDA tool. We measured frequency response from fabricated rectifier, and it was compared to circuit simulation results using the AHDL model. The frequency response of the fabricated rectifier circuit is not sufficient for 13.56MHz RFID, however, it is enough for 135kHz-band RFID.

Inspection for Inner Wall Surface of Communication Conduits by Laser Projection Image Analysis (레이저 투영 영상 분석에 의한 통신 관로 내벽 검사 기법)

  • Lee Dae-Ho
    • Journal of Korea Multimedia Society
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    • v.9 no.9
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    • pp.1131-1138
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    • 2006
  • This paper proposes a novel method for grading of underground communication conduits by laser projection image analysis. The equipment thrust into conduit consists of a laser diode, a light emitting diode and a camera, the laser diode is utilized for generating projection image onto pipe wall, the light emitting diode for lighting environment and the image of conduit is acquired by the camera. In order to segment profile region, we used a novel color difference model and multiple thresholds method. The shape of profile ring is represented as a minimum diameter and the Fourier descriptor, and then the pipe status is graded by the rule-based method. Both local and global features of the segmented ring shaped, the minimum diameter and the Fourier descriptor, are utilized, therefore injured and distorted pipes can be correctly graded. From the experimental results, the classification is measured with accuracy such that false alarms are less than 2% under the various conditions.

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Wide Tuning and Modulation Characteristics Analysis of Coupled-Ring Reflector Laser Diode (결합 링 반사기 레이저 다이오드의 광대역 파장 가변 및 변조 특성 해석)

  • Yoon, Pil-Hwan;Kim, Su-Hyun;Chung, Young-Chul
    • Korean Journal of Optics and Photonics
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    • v.17 no.6
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    • pp.544-547
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    • 2006
  • A time-domain modeling approach is used to study characteristics of a widely tunable coupled-ring reflector (CRR) laser diode(LD). The CRR consists of a bus waveguide and two coupled ring resonators coupled to the bus without resorting to distributed Bragg grating structure. The tuning range can be a few tens of nanometers with a side mode suppression ratio exceeding 35dB through the adjustment of currents into the phase control sections in the rings. The CRR laser diode has long effective cavity length compared to conventional laser diodes. Accordingly, a broad additional resonance peak in the amplitude modulation characteristics is observed between 20 to 30 GHz, implying the extension of amplitude modulation bandwidth.