• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.5
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• pp.16-22
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• 2002

This paper suggests the optimum processing conditions for obtaining good quality $P^{+}$-n shallow junctions formed by pre-amorphization and furnace annealing(FA) to reflow BPSG(bore phosphosilicate glass). $BF_2$ions, the p-type dopant, were implanted with the energy of 20keV and the dose of 2$\times$10$^{15}$ cm$^{-2}$ into the substrates pre-amorphized by As or Ge ions with 45keV, 3$\times$$10^{14}$ $cm^{-2}$. High temperature annealings were performed with a furnace and a rapid thermal annealer. The temperature range of RTA was 950~$1050^{\circ}C$, and the furnace annealing was employed for BPSG reflow with the temperature of $850^{\circ}C$ for 40 minutes. To characterize the formed junctions, junction depth, sheet resistance and diode leakage current were measured. Considering the preamorphization species, Ge ion exhibited better results than As ion. Samples preamorphized with Ge ion and annealed with $1000^{\circ}C$ RTA showed the most excellent characteristics. When FA was included, Ge preamorphization with $1050^{\circ}C$ RTA plus FA showed the lowest product of sheet resistance and junction depth and exhibited the lowest leakage currents.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.10
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• pp.1126-1135
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• 2007

This paper presents the varactor-tuned miniaturized hairpin tunable filter with a single control voltage. The previously proposed miniaturization method is a very straight-forward method to miniaturize a parallel coupled-line filter. In this paper, the miniaturized hairpin tunable filter is proposed with the constant ratio rule of that the capacitances of the each stage always have constant ratio without any dependency to miniaturized electrical length. To show the validity of the proposed method, a 3rd order 0.5 dB ripple Chebyshev fitter with a center frequency of 900 MHz and a fractional bandwidth(FBW) of 10 % was designed and fabricated. The fabricated filter was based on CER-10 substrate of Taconic Inc. with 1SV277 varactor diode of Toshiba Inc. The center frequency of the fabricated filter can be changed from 606 MHz to 944 MHz, 338 MHz with the control voltage from 0.5 V to 4 V. The insertion loss of the proposed filter is increased with the increment of the control voltage, and the filter characteristics are well reserved expect of slight change of the bandwidth with the various control voltage.

• Progress in Medical Physics
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• v.26 no.4
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• pp.223-228
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• 2015

Double-focused micro-Multileaf Collimator (${\mu}MLC$) is able to create radiation fields having sharper dose gradients at the field edges than common MLC. Therefore, ${\mu}MLC$ has been used for the stereotactic radiosurgery (SRS) and Stereotactic Radiotherapy (SRT). We evaluated the dosimetric characteristics of a doublefocused Dynamic-${\mu}MLC$ (DMLC) attached to the Elekta Synergy linear accelerator. For this study, the dosimetric parameters including, Percent Depth Dose (PDD), Leaf leakage and penumbra, have been measured by using of the radiochromic films (GafChromic EBT2), EDGE diode detector and three-dimensional water phantom. All datas were measured on 6 MV x-ray. As a result, The DMLC shows transmission below to 1% and because of double-focused construction of the DMLC, the penumbras of fields with DMLC are independent from the field sizes. In this paper, the resulting dosimetric evaluations proved the applicability of the DMLC attached to the Elekta Synergy linear accelerator.

• Journal of the Microelectronics and Packaging Society
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• v.13 no.1 s.38
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• pp.51-55
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• 2006

The green emitting high performance OLEDs using the $Alq_3$-C545T fluorescent system have been fabricated and characterized. In the device fabrication, 2-TNATA [4,4',4'-tris(2-naphthylphenyl-phenylamino)-triphenylamine] as a hole injection material and NPB [N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine] as a hole transport material were deposited on the ITO(indium thin oxide)/glass substrate by vacuum evaporation. And then, green color emission layer was deposited using $Alq_3$ as a host material and C-545T[10-(2-benzothiazolyl)-1,1,7,7- tetramethyl-2,3,6,7-tetrahydro-1H,5H,11H-[1]/benzopyrano[6,7,8-ij]-quinolizin-11-one] as a dopant. Finally, small molecule OLEDs with structure of ITO/2-TNATA/NPB/$Alq_3$:C545T/$Alq_3$/LiF/Al were obtained by in-situ deposition of $Alq_3$, LiF and Al as the electron transport material, electron injection material and cathode, respectively. Green OLEDs fabricated in our experiments showed the color coordinate of CIE(0.29, 0.65) and the maximum power efficiency of 7.3 lm/W at 12 V with the peak emission wavelength of 521 nm.

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.8 no.2
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• pp.83-90
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• 2009

White LEDs(Light Emitting Diode) offer advantageous properties such as high brightness, improved reliability, lower power consumption, and long lifetimes. An LED is an electronic device that converts an electrical signal into a tight signal and is used not only in Optical Communication Indoor wireless optical illuminating rooms, but also for wireless optical communication systems. Currently, studies about these white LEDs have been being progressed, and in this raper, we discuss the multiplex and the multiple access method of VLC(Visible Light Communication) systems using white LEDs. In proposed system, CDMA(Code Division Multiple Access) apples to VLC system to reduce interference of VLC system, and improve capacity. The superiority of OOK modulation is presented in analysis of results by comparing VLC-CDMA communication system using OOK(On-off keying) modulation and BPSK modulation in AWGN(Additive White Gaussian Noise) channel and Diffuse channel. And we investigate the significance of a solution of interference by multipath by comparing BER in multipath channel and AWGN channel. In the proposed system, we assume Directed LOS(Line Of Sight) and Diffuse Link, and suppose VLC-CDMA using OOC(Optical Orthogonal Code) as methods to increase efficiency of system by removing ISI(Inter Symbol Interference) caused by multiple access, optical spreading code, and also present an analysis of its performance.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.16 no.5
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• pp.197-203
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• 2016

In this paper, the dipole antenna that can control a beam steering were designed for attaching on LEO(Low Earth Orbit) small satellite. The proposed antenna was based on Yagi-Uda antenna. The parasitic element was proposed as a T-shape. Depending on the state of open or short at the end of a vertical element, we can choose a characteristic of the parasitic element with fixing a vertical element length of the parasitic element. Using this characteristic, we designed the director element and reflector element. The proposed antenna was designed to receive UHF 436.5 MHz. Antenna gain was chosen by link budget between one satellite and the other satellite or between the satellite and the ground station. By changing a vertical element length which is the largest variable that chooses an antenna characteristic, we confirmed that ${\lambda}/2$ length transformer has a result that improve 0.5 dB in comparison ${\lambda}/4$ length transformer from maximum gain direction. In production, we made an on/off switch composed of a diode, capacitor, and inductor control an open and short at the end of the parasitic element. As a result, the gain of antenna used in a link between one satellite and the other satellite had average 5.92 dBi. And the gain of antenna used in a link between the satellite and the ground station had average 0.99 dBi.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.42 no.3 s.333
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• pp.25-32
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• 2005

In this papers, we first, therefore, designed VCO(voltage controlled oscillator) that is composed of the dielectric resonator and the varactor diode, and then designed and fabricated PLDRO(phase locked dielectric resonator oscillator) that is combined with the sampling phase detector and loop filter. The measured results of the fabricated PLDRO at 12.05 [GHz] show the output power is 13.54 [dBm], frequency tuning range approximately +/- 7.5 [MHz], and Power variation over the tuning range less than 0.2 [dB], respectively. The phase noise which effects on bits error rate in digital communication is obtained with -114.5 [dBc/Hz] at 100 [KHz] offset from carrier, and The second harmonic suppression is less than -41.49 [dBc]. These measured results are found to be more improved than those of VCO without adopting PLL, and the phase noise and power variation performance characteristics show the better performances than those of conventional PLL.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.6
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• pp.28-34
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• 1999

We fabricated a planar ultra-violet photodetector whose ohmic and schottky contacts were respectively formed with evaporated Al and Pt on the GaN layer. To examine the applicability of the device to the UV sensor, we investigated its electrical and optical characteristics. The GaN layer on the sapphire waver had $7.8{\times}10^{16}cm^{-3}$ of doping concentnation and the $138 cm^2/V{\cdot}s$ of electron mobility and it absorbed the spectrum of the light below 325 nm wavelength. It had the responsivity of 2.8 A/W of at 325 nm, and the signal to noise ratio(SNR) of $4{\times}10^4$, and the noise equivalent power(NEP) of $3.5{\times}10^9$W under 5 V reverse bias. These results confirmed that the GaN schottky diode had a solar blind properly when it was applied to the UV photodetector.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.12
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• pp.105-112
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• 2009

In this paper, we investigated abnormal ESD failure on guard-rings in the smart power IC fabricated with $0.35{\mu}m$ Bipolar-CMOS-DMOS (BCD) technology. Initially, ESD failure occurred below 200 V in the Machine Model (MM) test due to current crowding in the parasitic diode associated with the guard-rings which are generally adopted to prevent latch-up in high voltage devices. Optical Beam Induced Resistance Charge (OBIRCH) and Scanning Electronic Microscope (SEM) were used to find the failure spot and 3-D TCAD was used to verify cause of failure. According to the simulation results, excessive current flows at the comer of the guard-ring isolated by Local Oxidation of Silicon (LOCOS) in the ESD event. Eventually, the ESD failure occurs at that comer of the guard-ring. The modified comer design of the guard-ring is proposed to resolve such ESD failure. The test chips designed by the proposed modification passed MM test over 200 V. Analyzing the test chips statistically, ESD immunity was increased over 20 % in MM mode test. In order to avoid such ESD failure, the automatic method to check the weak point in the guard-ring is also proposed by modifying the Design Rule Check (DRC) used in BCD technology. This DRC was used to check other similar products and 24 errors were found. After correcting the errors, the measured ESD level fulfilled the general industry specification such as HBM 2000 V and MM 200V.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.7
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• pp.10-16
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• 2011

We report on the simulation results of electrical/optical characteristics for nonpolar GaN LED having Mg-doped GaN spacer and quantum barrier, in comparison with those of the typical nonpolar GaN LED. In order to reduce the band-gap energy distortion and conduction-band discontinuity in InGaN/GaN multiple quantum wells(MQWs) of nonpolar GaN LED, and thereby to increase their current-voltage, light output power and emission peak intensity, we applied 6 nm-thick p-type($1{\times}10^{18}\;cm^{-3}$) GaN spacer and GaN QB schemes to the typical nonpolar GaN LED epitaxial structure. As a result, we found that the radiative recombination rate was increased by 23% in MQWs at 20 mA current injection. Also, the forward voltage($V_f$) and the light output power($P_{out}$) were improved by 3.7% and 7%, respectively, for the proposed nonpolar LED epitaxial structure, compared with those of the typical nonpolar GaN LED.