• Korean Journal of Optics and Photonics
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• v.14 no.5
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• pp.521-529
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• 2003

For complex-coupled (CC) DFB lasers, we found that there might be little correlation between the single mode yields at threshold and above threshold. At threshold, the single mode yield considering f number of in-phase (IP) CC DFB lasers is the same as that of anti-phase (AP) CC DFB lasers. However, the single mode yield as a function of injection current above threshold of IP CC DFB lasers is much different from that of AP CC DFB lasers. In the case of IP CC DFB lasers, the single mode yield increases as the coupling coefficient ratio (CR) increases, while, in the case of AP CC DFB lasers, the single mode yield decreases rapidly regardless of CR as the injection current increases. In the case of AR-HR combinations, the effect of AR ref1ectivity on the single mode yield increases as the coupling strength decreases. As the coupling strength decreases, the CR at which the increase rate of the single mode yield starts to decrease, increases, and the maximum single mode yield increases. Single mode yields of AR-HR and AR-AR combinations are larger than those of AR-CL and CL-CL combinations.

• Proceedings of the Membrane Society of Korea Conference
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• 1996.10a
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• pp.82-83
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• 1996

키토산 막을 이용한 유기혼합물 중의 물을 효율적으로 분리해내는 투과증발공정은 많은 발전을 거듭해 왔으며, 특히 에탄올중의 물을 효율적으로 탈수하는 것에는 탁월한 성능을 보고한 바 있다. 키토산은 주로 게등의 갑각류의 외피에서 얻을 수 있는 키닌을 주원료로 하는 물질로서 친수성이 뛰어난 막재료뿐만 아니라 생체적 합성이 요구되는 생체재료로도 널리 사용이 되고 있는 물질이다. 에틸렌즐리콜은 석유화학공정에서 생성되는 에틸렌 옥시이드를 원료로 하여 제조가 되고 있는 물질이다. 에틸렌글리콜은 PET의 원료로서 사용이 많이 되고 있으며, 겨울철에는 자동차등의 부동액이나 눈이 많이 내리는 지역에서 효율적으로 눈을 제거하기 위하여 공항의 활주로등에서 주로 사용이 되고 있는 물질이다. 에틸렌글리콜의 제조공정중에서 물을 효과적으로 제거하는 방법으로는 증류법이 있을 수 있으나 에틸렌글리콜의 비점이 물보다 현저히 높기 때문에, 공비혼합물을 생성하지 않는 이 혼합물의 특성과는 무관하게, 투과증발법을 이용할 경우 에너지의 절감이 이루어지게 되기 때문에 매우 효용적이고 추천할만할 공정이다. 또한 활주로의 부동액등으로 사용되는 경우 에틸렌글리콜의 재활용이 이루어질 경우 경비의 절감이나 환경적인 문제의 해결등의 장점이 있어서 물의 분리가 요구되고 있다. 이 경우에는 마찬가지로 에틸렌글리콜과 물의 분리는 일반적인 분리에 비해서 투과증발법이 유용하다고 할 수 있다. 본 실험에서는 키토산 막의 효율적인 응용예로서 기존의 알콜의 탈수와 더불어서 에틸렌글리콜의 탈수를 고찰해보고자 하였다.관리가 간편하며, 용존산소량을 줄일수 있다는 점에서 장점이 있으나, 전 ultra pure water의 system이 열적으로 안정해야 하고 경제적인 문제가 수반하는 단점을 가지고 있다. 후자의 경우, 미량의 과산화수소수 (1~10,000 ppm)를 이용해 처리 해주는 방법의 경우 경제적으로 큰 장점이 있고, 처리가 단순하다는 장점이 있으나 과산화수소수 자체에 포함하고 있는 높은 impurit level, 그리고 처리후 장시간의 flushing time을 가져야 한다는 단점등이 존재 하고 있다.요구된다. 몰입이 가능하여 임계치가 저하된 것으로 여겨진다. 또한 광학적 이득의 존재는 이 구조에 의한 극단파장 반도체 레이저다이오드의 실현 가능성을 나타내는 것이다.548 mL에 비해 통계학적으로 의의 있게 적었다(p<0.05). 결론: 관상동맥우회로 조성수술에서 전방온혈심정지액을 사용할 때 희석되지 많은 고농도 포타슘은 fliud overload와 수혈을 피하고 delivery kit를 사용하지 않음으로써 효과적이고 만족할 만한 심근보호 효과를 보였다.를 보였다.4주까지에서는 비교적 폐포는 정상적 구조를 유지하면서 부분적으로 소폐동맥 중막의 비후와 간질에 호산구 침윤의 소견이 특징적으로 관찰되었다. 결론: 분리 폐 관류는 정맥주입 방법에 비해 고농도의 cisplatin 투여로 인한 다른 장기에서의 농도 증가 없이 폐 조직에 약 50배 정도의 고농도 cisplatin을 투여할 수 있었으며, 또한 분리 폐 관류 시 cisplatin에 의한 직접적 폐 독성은 발견되지 않았

• Journal of Oral Medicine and Pain
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• v.36 no.4
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• pp.215-224
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• 2011

The aim of the study was to investigate the effects of 904 nm GaAs laser irradiation for patients with hypersensitive teeth and to find the possibility of clinical use of this Low Level Laser Therapy (LLLT) for the control of hypersensitive teeth. Eleven patients visited Dept. of Oral Medicine, Dankook University participated in this study. Each patient contributed at least two or more contralateral pairs of hypersensitive teeth with exposed dentine at cervical surfaces. Total number of teeth used from subjects participated in this study was 50: 25 experimental and control teeth respectively. All participants were treated with 904 nm GaAs diode laser every week during 4 weeks. Tactile and cold (ice stick) tests were carried out before LLLT every week during 4 weeks and 1 week later after the last LLLT by measuring visual analogue scale (VAS) of patients and by measuring a score of electrical pulp tester (EPT) simultaneously. The VAS score in tactile test decreased significantly with time, but there was not statistically difference between those of groups. The score of EPT in the experimental group was significantly higher than that of control group, although there was no change with time. In cold test, there was significant difference between two groups and cold sensitivity of the experimental group significantly decreased with time after every LLL irradiation, compared with that of control group. Based on the results, it is suggested that the 904 nm GaAs laser irradiation could be positively used as an effective, reversible method in treating cervical dentine hypersensitivity.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.36C no.5
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• pp.27-37
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• 1999

A CMOS ReadOut Integrated Circuit (ROlC) for InfraRed Focal Plane Array (IRFPA) detector is presented, which is a key component in uncooled thermal imaging systems. The ROIC reads out signals from $64\times64$ Barium Strontium Titanate (BST) infrared detector array, then outputs pixel signals sequentially after amplifying and noise filtering. Various design requirements and constraints have been considered including impedance matching, low noise, low power dissipation and small detector pitch. For impedance matching between detector and pre~amplifier, a new circuit based on MOS diode structure is devised, which can be easily implemented using standard CMOS process. Also, tunable low pass filter with single~pole is used to suppress high frequency noise. In additions, a clamping circuit is adopted to enhance the signal~to-noise ratio of the readout output signals. The $64\times64$ IRFPA ROIC is designed using $0.65-\mu\textrm{m}$ 2P3M (double poly, tripple metal) N~Well CMOS process. The core part of the chip contains 62,000 devices including transistors, capacitors and resistors on an area of about $6.3-mm\times6.7-mm$.

• Journal of the Korean Chemical Society
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• v.54 no.3
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• pp.291-294
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• 2010

In this study, we demonstrated high-efficiency blue organic light-emitting diodes (OLEDs) employing BCzVBi as a blue fluorescent dye doped into blue host material, DPVBi with various concentration. The optimized blue OLED device having high-efficiency was constructed with structure of NPB (500 ${\AA}$) / DPVBi:BCzVBi-6% (150 ${\AA}$)/$Alq_3$(300 ${\AA}$) / Liq (20 ${\AA}$) / Al (1000 ${\AA}$). The maximum luminescence of blue OLED was 13200 cd/$m^2$ at 13.8 V and current density and maximum efficiency were 26.4 mA/$cm^2$ at 1000 cd/$m^2$ and 4.24 cd/A at 3.9 V, respectively. Luminous efficiency shows two times higher than comparing with non-doped BCzVBi blue OLED whereas $CIE_{x,y}$ coordinate was similar with bare DPVBi blue OLED such as (0.16, 0.19). Electroluminescence of BCzVBi-6% doped blue OLED has two major peaks at 445 nm and 470 nm whereas pure DPVBi's blue peak appears at 456 nm and it is happened through endothermic Forster energy transfer by molecule's vibration between LUMO of DPVBi as host material and LUMO of BCzVBi as dopant in device.

• Journal of Radiation Protection and Research
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• v.31 no.4
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• pp.181-186
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• 2006

A radiophotoluminescent glass rod detector (GRD) system has recently become commercially available. We investigate the dosimetric properties of the GRD regarding the reproducibility of signal, dose linearity and energy dependence. The reproducibility of five measurements for 50 GRDs is presented by an average of one standard deviation of each GRD and it is ${\pm}1.2%$. It is found to be linear in response to doses of $^{60}Co$ beam in the range 0.5 to 50 Gy with a coefficient of linearity of 0.9998. The energy dependence of the GRD is determined by comparing the dose obtained using cylindrical chamber to that by using the GRD. The GRD response for each beam is normalized to the response for a $^{60}Co$ beam. The responses for 6 and 15 MV x-ray beams are within ${\pm}1.5%$ (1SD). The energy response of GRD for high-energy photon is almost the same as the energy dependence of LiF:Mg:Ti (TLD-100)and shows little energy dependence unlike p-type silicon diode detector. The GRDs have advantages over other detectors such diode detector, and TLD: linearity, reproducibility and energy dependency. It has been verified to be an effective device for small field dosimetry for stereotactic radiosurgery.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.10 no.9
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• pp.1663-1670
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• 2006

Single crystal Fe thin films were grown directly onto n-Si(111) substrates by pulsed electrodeposition. Cyclic Voltammogram(CV) indicated that the $Fe^{2+}/n-Si(111)$ interface shows a good diode behavior by forming a Schottky barrier. From Mott-Schottky (MS) relation, it is found that the flat-band potential of n-Si(111) substrate and equilibrium redox potential of $Fet^{2+}$ ions are -0.526V and -0.316V, respectively. The nucleation and growth kinetics at the initial reaction stages of Fe/n-Si(111) substraste was studied by current transients. Current transients measurements have indicated that the deposition process starts via instantaneous nucleation and 3D diffusion limited growth. After the more deposition, the deposition flux of Fe ions was saturated with increase of deposition time. from the as-deposited sample obtained using the potential pulse of 1.4V and 300Hz, it is found that Fe nuclei grows to three dimensional(3D) islands with the average size of about 100nm in early deposition stages. As the deposition time increases, the sizes of Fe nuclei increases progressively and by a coalescence of the nuclei, a continuous Fe films grow on the Si surface. In this case, the Fe films show a highly oriented columnar structure and x-ray diffraction patterns reveal that the phase ${\alpha}-Fe$ grows on the n-Si(111) substrates.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.50-50
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• 2008

ZnO has been extensively studied for optoelectronic applications such as blue and ultraviolet (UV) light emitters and detectors, because it has a wide band gap (3.37 eV) anda large exciton binding energy of ~60 meV over GaN (~26 meV). However, the fabrication of the light emitting devices using ZnO homojunctions is suffered from the lack of reproducibility of the p-type ZnO with high hall concentration and mobility. Thus, the ZnO-based p-n heterojunction light emitting diode (LED) using p-Si and p-GaN would be expected to exhibit stable device performance compared to the homojunction LED. The n-ZnO/p-GaN heterostructure is a good candidate for ZnO-based heterojunction LEDs because of their similar physical properties and the reproducibleavailability of p-type GaN. Especially, the reduced lattice mismatch (~1.8 %) and similar crystal structure result in the advantage of acquiring high performance LED devices with low defect density. However, the electroluminescence (EL) of the device using n-ZnO/p-GaN heterojunctions shows the blue and greenish emissions, which are attributed to the emission from the p-GaN and deep-level defects. In this work, the n-ZnO:Ga/p-GaN:Mg heterojunction light emitting diodes (LEDs) were fabricated at different growth temperatures and carrier concentrations in the n-type region. The effects of the growth temperature and carrier concentration on the electrical and emission properties were investigated. The I-V and the EL results showed that the device performance of the heterostructure LEDs, such as turn-on voltage and true ultraviolet emission, developed through the insertion of a thin intrinsic layer between n-ZnO:Ga and p-GaN:Mg. This observation was attributed to a lowering of the energy barriers for the supply of electrons and holes into intrinsic ZnO, and recombination in the intrinsic ZnO with the absence of deep level emission.

• Journal of the Microelectronics and Packaging Society
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• v.15 no.2
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• pp.1-6
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• 2008

New devices with the structure of ITO/2-TNATA/NPB/TCTA/CBP:$7%Ir(ppy)_3$/BCP/SFC-137/LiF/Al were designed and fabricated to develop high efficiency green phosphorescent organic light emitting diodes and their electroluminescence properties were evaluated. Among the devices with different thicknesses of CBP in a range of $150{\AA}{\sim}350{\AA}$, the best luminance was obtained in the device with $300{\AA}$-thick CBP host. Nearly saturated current efficiencies indicates that the maximum efficiency value can be obtained with CBP thicknesses of $300{\AA}{\sim}350{\AA}$. The current density, luminance, and current efficiency of the PhOLED(phosphorescent organic light emitting diode) with $CBP(300{\AA}):7%Ir(ppy)_3-emissive$ layer at an applied voltage of 10V were $40mA/cm^2,\;10000cd/m^2$, and 25 cd/A, respectively. The maximum current efficiency was 40.5cd/A under the luminance of $160cd/m^2$. The peak wavelength and FWHM(full width at half maximum) in the electroluminescence spectral were 512nm and 60nm, respectively. The color coordinate was (0.28, 0.63) on the CIE (Commission Internationale de I'Eclairage) chart.

• Journal of The Korean Association For Science Education
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• v.38 no.4
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• pp.519-526
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• 2018

The purpose of this study is to analyze the Korean high-school physics teachers' difficulties in teaching textbook physics inquiries. For this purpose, 63 high school physics teachers completed a questionnaire. We asked teachers to evaluate the degree of difficulty in teaching textbook physics inquiries. Additionally, we asked physics teachers to select the two most difficult inquiries to teach and to express their reasons for these selections. The main results are as follows: First, the degree of difficulty for all the inquiry is 2.79, indicating a little easy level of difficulty. The two most difficult inquiries are 'Meissner effect experiment' and 'Investigation of diode characteristics using $Cu_2O$ plate and ZnO powder.' Second, the difficulty reasons to teach physics inquiry was presented in the order of 'environment domain,' 'textbook domain,' 'student domain,' and 'teacher domain.' In particular, the biggest reasons for difficulty for teachers are 'preparation of experimental apparatus' and 'safety.' There are many opinions related to 'problem of the experiment itself' in 'textbook domain' and 'lack of ability to manipulate' in 'student domain.' Based on the results of this study, we added a discussion to activate the high school physics textbook inquiries.