• Journal of the Semiconductor & Display Technology
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• v.21 no.4
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• pp.138-143
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• 2022

We analyzed the influence of post-annealing on Ga₂O₃/n-type 4H-SiC heterojunction diode. Gallium oxide (Ga₂O₃) thin films were deposited by radio frequency (RF) sputtering. Post-deposition annealing at 950℃ in an Oxygen atmosphere was performed. The material properties of Ga₂O₃ and the electrical properties of the diodes were investigated. Atomic Force Microscopy (AFM), X-Ray Diffraction and Scanning Electron Microscope (SEM) images show a significant increase in the roughness and crystallinity of the O₂-annealed films. After Oxygen annealing X-ray Photoelectron Spectroscopy (XPS) shows that the atomic ratio of oxygen increases which is related to a decrease in oxygen vacancy within the Ga₂O₃ film. The O₂-annealed diodes exhibited higher on-current and lower leakage current. Moreover, the ideality factor, barrier height, and thermal activation energy were derived from the current-voltage curve by increasing the temperature from 298 - 434K.

• Journal of IKEEE
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• v.25 no.4
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• pp.741-749
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• 2021

This paper presents the current-fed type LLC AC to DC high frequency resonant converter capable of ZVZCS(Zero-Voltage and Zero-Current Switching). The current-fed type LLC AC to DC high frequency resonant converter proposed in this paper could operate not only in ZVS(Zero-Voltage Switching) operation by connecting the resonant capacitors(C₁, C₂) in parallel across the switching devices but also in ZCS(Zero-Current Switching) operation of the secondary diode. The ZVS and ZCS operations can reduce the turn-on loss of the switching devices and the turn-off loss of the secondary diodes, respectively. The circuit analysis of current-fed type LLC AC to DC high frequency resonant converter proposed in this paper is addressed generally by adopting the normalized parameters. The operating characteristics of proposed LLC AC to DC high frequency resonant converter were also evaluated by using the normalized control parameters such as the normalized control frequency(μ), the normalized load resistor(λ) and so on. Based on the characteristic values through the characteristics of evaluation, an example of the design method of proposed LLC AC to DC high frequency resonant converter is suggested, and the validity of the theoretical analysis is confirmed using the experimental results and PSIM simulation.

• Journal of the Society of Cosmetic Scientists of Korea
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• v.48 no.3
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• pp.245-254
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• 2022

In this study, we tried to investigate the efficacy of combined light therapy using low-power lasers at 655 nm and LEDs emitting wavelengths at 625 ± 5 nm and 850 ± 10 nm in hair loss and scalp. A total of 33 subjects were enrolled in this clinical trial. Each subject used the LLLT and LED device on the scalp for 10 min on a daily basis for 12 weeks. After 12 weeks of LLLT and LED device use, there were significant improvements in redness, elasticity, and hydration of the scalp. Additionally, hair luster and tensile strength were improved. A remarkable decrease in total shed hairs was observed in all subjects at 4, 8, and 12 weeks without any serious adverse event. Combined light therapy using LLLT and LEDs proved to be an effective treatment for reducing hair loss and improving scalp condition.

• Applied Chemistry for Engineering
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• v.34 no.1
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• pp.94-97
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• 2023

2,7-bis(3',6'-diphenyl-[1,1':2',1"-terphenyl]-4'-yl)-9,9'-spirobi[fluorene] (BTPSF) and 2,7-bis(1,4-diphenyltriphenylen-2-yl)-9,9'-spirobi[fluorene] (BDTSF) were successfully synthesized as novel blue-emission materials for organic light-emitting diodes (OLEDs) based on the spirobifluorene (SBF) moiety. BTPSF and BDTSF were obtained in high purity via a Diels-Alder reaction, without the use of a catalyst. Photoluminescence spectra of the synthesized materials showed maximum emitting wave-lengths of approximately 381 and 407 nm in solution and 395 and 434 nm in the film state, for BTPSF and BDTSF, respectively, indicating ultra-violet and deep blue emission colors. BDTSF was applied as an emissive layer (EML) in non-doped devices and achieved a current efficiency of 0.61 cd/A and an external quantum efficiency (EQE) of 0.46%.

• Journal of IKEEE
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• v.26 no.4
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• pp.584-589
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• 2022

For DC-AC power conversion from a high-voltage photovoltaic panel to a single-phase grid, the two-stage transformerless inverter with a buck-boost converter followed by a full-bridge inverter is widely used. To avoid an excessive leakage current due to the large parasitic capacitance of the photovoltaic panel, the full-bridge inverter can only adopt the bipolar PWM which results in much higher power loss compared to the unipolar PWM. In order to overcome such a poor efficiency, this paper proposes a new topology in which an IGBT and a diode for circuit isolation are added to the buck-boost converter. The proposed circuit isolation method allows the unipolar PWM in the full-bridge inverter without any increase in the leakage current so that the overall efficiency can be improved. The validity of the proposed solution is verified by computer simulation and power loss calculation.

• Journal of the Semiconductor & Display Technology
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• v.21 no.2
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• pp.123-126
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• 2022

We investigated deep levels in n-type 4H-SiC epitaxy layer of the Positive-Intrinsic-Negative diode and Schottky barrier diodes by using deep level transient spectroscopy. Despite the excellent performance of 4H-SiC, research on various deep level defects still requires a lot of research to improve device performance. In Positive-Intrinsic-Negative diode, two defects of 196K and 628K are observed more than Schottky barrier diode. This is related to the action of impurity atoms infiltrating or occupying the 4H-SiC lattice in the ion implantation process. The I-V characteristics of the Positive-Intrinsic-Negative diode shows about ~100 times lower the leakage current level than Schottky barrier diode due to the grid structures in Positive-Intrinsic-Negative. As a result of comparing the capacitance of devices diode and Schottky barrier diode devices, it can be seen that the capacitance value lowered if it exists the P implantation regions from C-V characteristics.

• Journal of the Semiconductor & Display Technology
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• v.21 no.1
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• pp.95-102
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• 2022

Since the organic light-emitting diodes (OLEDs) have been widely investigated as next-generation displays, it has been successfully commercialized as a flexible and rollable display. However, there is still wide room and demand to improve the device characteristics such as power efficiency and lifetime. To solve this issue, there has been a wide research effort, and among them, the internal and the external light extraction techniques have been attracted in this research field by its fascinating characteristic of material independence. In this study, a micro-nano composite structured external light extraction layer was demonstrated. A reactive ion etching (RIE) process was performed on the surfaces of hexagonally packed hemisphere micro-lens array (MLA) and randomly distributed sphere diffusing films to form micro-nano composite structures. Random nanostructures of different sizes were fabricated by controlling the processing time of the O₂ / CHF₃ plasma. The fabricated device using a micro-nano composite external light extraction layer showed 1.38X improved external quantum efficiency compared to the reference device. The results prove that the external light extraction efficiency is improved by applying the micro-nano composite structure on conventional MLA fabricated through a simple process.

• Journal of the Semiconductor & Display Technology
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• v.22 no.1
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• pp.23-27
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• 2023

Organic light-emitting diode(OLED) is very thin organic films which are hundreds of nanometers. Unlike bottom-emission OLED(BEOLED), top-emission OLED(TEOLED) emits light out the front, opaque moisture absorbents or metal foils can't be used to prevent moisture and oxygen. And it is difficult to have flexible characteristics with glass encapsulation, so thin film encapsulation which can compensate for those two disadvantages is mainly used. In this study, Al₂O₃ thin films by atomic layer deposition(ALD) were examined by changing the argon gas purge flow rate and we applied this Al₂O₃ thin films to the encapsulation of TEOLED. Ag / ITO / N,N'-Di-[(1-naphthyl)-N,N'-diphenyl]-1,1'-biphenyl-4,4'-diamine / tris-(8-hydroxyquinoline) aluminum/ LiF / Mg:Ag (1:9) were used to fabricate OLED device. The characteristics such as brightness, current density, and power efficiency are compared. And it was confirmed that with a thickness of 40 nm Al₂O₃ thin film encapsulation process did not affect OLED properties. And it was enough to maintain a proper OLED operation for about 9 hours.

• Journal of Korea Society of Industrial Information Systems
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• v.14 no.5
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• pp.91-101
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• 2009

This study's purpose is to revive pre-construction situation earlier than construction of media facade using light-emitting diode, and analyze the strong and weak points of simulation image making process and technology, including lots of expressing methods. Exterior building decoration that was originated from Super Graphic led to the LED construction with a trend of increased night activities of these days. Initial Super Graphic was just in the level of deciding what to do with simple CAD drawings, but today's media facade construction is not so simple as the previous ones. This is because of the problems that should think about balances between neighboring environment and buildings, including high construction costs. According to survey results, media facade construction simulation's various expressing methods, its processes of analysis, and its strong & weak points will suggest standards for its size of construction and simulation purpose, including recommending suggestions that can respond rapidly by clients' diverse demands.

• The Journal of the Korea institute of electronic communication sciences
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• v.18 no.4
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• pp.617-624
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• 2023

Recently, miniaturization and low power consumption of electronic products and improved efficiency and power factor improvement have become a matter of great interest. In this paper, an AC-DC converter based on PWM control was designed and made. The AC-DC converter is designed with a structure in which one rectifier circuit and one output voltage control circuit are connected in series. The rectifier circuit is a diode-based single phase full-wave current circuit and the output voltage control circuit is a DC-DC conversion circuit based on PWM control. Arduino was used as the main control device for PWM control, and LCD was configured at the output stage so that the control result could be checked. The error between the output voltage displayed on the oscilloscope and LCD and the target output voltage was confirmed through repeated experiments with the test circuit, and the validity of the proposed design methodology was confirmed by showing an error rate of about 5% based on the oscilloscope measurement value.