• Resources Recycling
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• v.22 no.2
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• pp.37-43
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• 2013

Unlike the conventional slurry type wire sawing, the diamond wire sawing method adopts diamond plated wire as sawing media instead of slurry consisted of both silicon carbide and oil. Wafering with diamond plated wire leaves solid element of the sludge mostly made up of silicon, and it is not difficult to recover 95% or more of silicon by a simple separation process of oil from the sludge. In this study, silicon was recovered from the sludge by drying process and organic and metal impurities were removed by sintering process. As result 3N grade silica was obtained successfully by thermal processing utilized the fact that the recovered silicon readily combines with oxygen due to fine particle size.

• Journal of the Microelectronics and Packaging Society
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• v.14 no.1
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• pp.55-60
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• 2007

The codeposition behavior of submicron sized diamond with nickel from nickel electrolytes has been investigated. Electroplating of diamond dispersed nickel composites was carried out on a rotating disk electrode (RDE). The effects of current type and current density on the electrodeposited Ni-diamond composite coating were investigated. The effects of surfactants on the composite coating were also investigated. The hardness of coating was measured with varying electroplating conditions using Micro Vickers. As diamond was incorporated into the coating, the hardness of coating as well as the wear resistance was improved. The hardness of the coating was increased as much as 100% and the wear resistance was improved as much as 27%. The hardness of composite coating layer increased slightly at the diamond content of above 20 gpl.

• Korean Journal of Materials Research
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• v.9 no.11
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• pp.1049-1054
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• 1999

Two-step growth method is suggested to enhance the alignment of highly oriented diamond films. (100) Si wafers are pretreated with negative biasing of - 200 V at $850^{\circ}C$ for 20 min with 4 % methane in hydrogen plasma. The pretreated wafers are grown under the lst-step growth conditions(2 % CH$_4$ in H$_2$, $810^{\circ}C$) from 2 hr to 35 hr, in order to obtain <100> textured films. The 2nd-step growth(2 % CH$_4$ in H$_2$, $850^{\circ}C$) is carried out to make diamond films having (100) growth planes, which are parallel to the substrate. The alignment of the films after the 1st-step growth, has been analyzed by {111} X-ray pole figure, which is improved abruptly with increasing film thickness. However, the pyramidal surface morphology is inevitable. These morphology is flattened after the 2nd-step growth by developing the (100) facets parallel to the substrate. The alignment of the highly oriented textured films after the two-step growth depends on the thickness of the 1st-step growth film.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 1997.04a
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• pp.69-73
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• 1997

Microwave Plasma assisted CVD (Chemical Vapor Deposition) and DC Plasma CVD were used to prepare thin and thick diamond film, respectively. Diamond coated silicon nitride and fiee standing diamond thick film were eroded by silicon carbide particles. The velocity of the solid particle was about 220m/sec. Phase transformation and the other crack formation were investigated by using Raman spectroscopy and microscopy.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1993.10a
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• pp.161-165
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• 1993

최근 산업의 발달과 함께 제품의 고정도화,다양화,생산성 향상등의 요구에 의해 연삭가공에 있어서도 고능률.고정도가공이 주목되고 있다. 특히 반도체산업,광산업 등에 넓게 응용되고 있는 광학소자 가공에서는 가공정도와 가공능률이 동시에 달성되는 것에 대한 요구가 많지만, 이러한 광학소자의 가공에 있어서 기존의 연마방법은 가공정도와 가공능률에 한계가 있었다. 그런데 연삭가공에서 고능률,고정도가공의 한가지 방법으로 "전해 인프로세스드레싱(Electrolytic In-Process Dressing;ELID)연삭법"이 개발되어 고강도 메탈본드숫돌에 의한 초경합금,세라믹재료등의 경취성재료를 고품위 가공하고 있다. ELID연석법이란 숫돌의 다이아몬드나 cBN등의 연삭입자를 결합하고 있는 금속결합재를 전기분해에 의해 적당량 제거하여 일반적인 연삭과 같이 연삭입자를 연속적으로 돌출시켜 가공이 유지되도록 하는 연삭방법이다. 본 연구는 ELID연삭기술을 이용하여 원통연삭에서 철갈재료 및 세라믹재료의 고능률.고정도 가공특성을 살펴보았다. 원통연삭에서의 주철파이바본드숫돌 및 코발트본드숫돌에 의한 ELID연삭과 비트리파이드본드숫돌에 의한 일반연삭과의 고능률 가공특성을 비교하였다.

• Journal of the Korean Society for Precision Engineering
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• v.20 no.7
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• pp.78-83
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• 2003

Characterization of an ultra precision grinding plate for GMR head manufacturing is performed by measuring frictional forces between the grinding plate and the advanced ceramic Two kinds of methods of producing the precision grinding plates are presented: texturing and micro-channeling. Texturing is effective in terms of production time but micro-channeling excels in quality control. It is found that the frictional coefficient of a precision grinding plate decreases as the impregnation of diamond grain onto the precision-grinding plate progresses, and remains unchanged once the impregnation process is successfully completed, even after 100 revolutions of the precision-grinding plate against the advanced ceramic under 40 N of normal force. Therefore, the measurement of the frictional coefficient can replace costly and time-consuming process of estimating the level of impregnation of diamond grain on the precision-grinding plate, which has been performed by using scanning electron microscope, and be employed as an index to determine the level of impregnation of diamond grain.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2013.05a
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• pp.124-124
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• 2013

마이크로웨이브 플라즈마 화학기상증착(MPCVD) 시스템을 이용하여 서로 다른 기판(Si,SiC,W,Ti) 위에 나노결정질 다이몬드 박막을 증착하였다. 공정압력, 마이크로웨이브 전력, $Ar/CH_4$,기판온도를 일정하게 놓고, 증착시간을 0.5,1,2h으로 변화시켜 박막의 성장과정을 관찰하였다. 기판 종류에 따라 성장 초기에 형성되는 입자의 시간이 달랐으며, 2h 이후에는 입자들이 서로 붙어 완전한 박막을 형성함을 관찰하였다. 같은 증착시간에서 서로 다른 기판을 비교하였을 때, W > (Si, SiC) > Ti 기판의 순이었다.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2002.05a
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• pp.270-273
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• 2002

Conditioning은 CMP(Chemical Mechanical Planarization)에 필수적인 공정중의 하나이다. Conditioning의 목적은 removal rate와 uniformity를 CMP 공정 중에서 일정하게 유지시키는데 목적이 있다. 예전의 conditioning disks는 stainless steel substrate 위에 diamond 입자를 올리고 Ni전기도금을 결합시켜서 사용하였다. 그러나, CMP 공정 중에 Ni의분해로 인한 금속의 오염과 diamond abrasive의 분리로 인하여 scratch 문제가 발생하였다. 이 문제를 해결하기 위해서 ceramic substrate와 그것을 정밀 가공하는 기술을 응용함으로써 본래의 conditioning disks가 가지고 있는 diamond 입자의 분리와 metals 분해의 문제를 해결할 수 있게 되었다.

• Tribology and Lubricants
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• v.35 no.5
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• pp.286-293
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• 2019

In friction and wear tests that use friction force microscopy (FFM), the wear debris transfer to the tip apex that changes tip radius is a crucial issue that influences the friction and wear performances of films and coatings with nanoscale thicknesses. In this study, FFM tests are performed for bilayer $MoS_2$ film to obtain a better understanding of how geometrical and chemical changes of tip apex influence the friction and wear properties of nanoscale molecular layers. The critical load can be estimated from the test results based on the clear distinction of the failure area. Scanning electron microscopy and energy-dispersive spectroscopy are employed to measure and observe the geometrical and chemical changes of the tip apex. Under normal loads lower than 1000 nN, the reuse of tips enhances the friction and wear performance at the tip-sample interface as the contact pair changes with the increase of tip radius. Therefore, the reduction of contact pressure due to the increase of tip radius by the transfer of $MoS_2$ or Mo-dominant wear debris and the change of contact pairs from diamond/$MoS_2$ to partial $MoS_2$ or Mo/$MoS_2$ can explain the critical load increase that results from tip reuse. We suggest that the wear debris transfer to the tip apex should be considered when used tips are repeatedly employed to identify the tribological properties of ultra-thin films using FFM.

• Journal of the Korean Society for Precision Engineering
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• v.25 no.9
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• pp.32-37
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• 2008

Freestanding hydride vapor phase epitaxy grown GaN(Gallium Nitride) substrates subjected to various polishing methods were characterized for their surface and subsurface conditions, Although CMP(Chemical Mechanical Polishing) is one of the best approaches for reducing scratches and subsurface damages, the removal rate of Ga-polar surface in CMP is insignificant($0.1{\sim}0.3{\mu}m$/hr) as compared with that of N-polar surface, Therefore, conventional MP(Mechanical Polishing) is commonly used in the GaN substrate fabrication process, MP of (0001) surface of GaN has been demonstrated using diamond slurries with different abrasive sizes, Diamond abrasives of size ranging from 30nm to 100nm were dispersed in ethylene glycol solutions and mineral oil solutions, respectively. Significant change in the surface roughness ($R_a$ 0.15nm) and scratch-free surface were obtained by diamond slurry of 30nm in mean abrasive size dispersed in mineral oil solutions. However, MP process introduced subsurface damages confirmed by TEM (Transmission Electronic Microscope) and PL(Photo-Luminescence) analysis.