• Title/Summary/Keyword: 누설전류

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Fabrication and Characteristics of Zinc Oxide- and Gallium doped Zinc Oxide thin film transistor using Radio Frequency Magnetron sputtering at Room Temperature (Zinc Oxide와 갈륨이 도핑 된 Zinc Oxide를 이용하여 Radio Frequency Magnetron Sputtering 방법에 의해 상온에서 제작된 박막 트랜지스터의 특성 평가)

  • Jeon, Hoon-Ha;Verma, Ved Prakash;Noh, Kyoung-Seok;Kim, Do-Hyun;Choi, Won-Bong;Jeon, Min-Hyon
    • Journal of the Korean Vacuum Society
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    • v.16 no.5
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    • pp.359-365
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    • 2007
  • In this paper we present a bottom-gate type of zinc oxide (ZnO) and Gallium (Ga) doped zinc oxide (GZO) based thin film transistors (TFTs) through applying a radio frequency (RF) magnetron sputtering method at room temperature. The gate leakage current can be reduced up to several ph by applying $SiO_2$ thermally grown instead of using new gate oxide materials. The root mean square (RMS) values of the ZnO and GZO film surface were measured as 1.07 nm and 1.65 nm, respectively. Also, the transmittances of the ZnO and GZO film were more than 80% and 75%, respectively, and they were changed as their film thickness. The ZnO and GZO film had a wurtzite structure that was arranged well as a (002) orientation. The ZnO TFT had a threshold voltage of 2.5 V, a field effect mobility of $0.027\;cm^2/(V{\cdot}s)$, a on/off ratio of $10^4$, a gate voltage swing of 17 V/decade and it operated in a enhancement mode. In case of the GZO TFT, it operated in a depletion mode with a threshold voltage of -3.4 V, a field effect mobility of $0.023\;cm^2/(V{\cdot}s)$, a on/off ratio of $2{\times}10^4$ and a gate voltage swing of 3.3 V/decade. We successfully demonstrated that the TFTs with the enhancement and depletion mode type can be fabricated by using pure ZnO and 1wt% Ga-doped ZnO.

Effect of Coolant on PEMFC Performance in Low Humidification Condition (저가습 조건에서 냉각 유체의 고분자전해질 연료전지에 대한 영향)

  • Lee, Hung-Joo;Song, Hyun-Do;Kwon, Jun-Taek;Kim, Jun-Bom
    • Journal of the Korean Electrochemical Society
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    • v.10 no.1
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    • pp.25-30
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    • 2007
  • Proton exchange membrane fuel cell(PEMFC) performance could be affected by various factors such as cell temperature, total pressure, partial pressure of reactants and relative humidity. Hydrogen ion is combined with water to form hydronium ion [$H_3O^+$] and pass through membrane resulting electricity generation. Cooling system is needed to remove heat and other uses on large scale fuel cell. In case that collant conductivity is increased, fuel cell performance could be decreased because produced electricity could be leaked through coolant. In this study, triple distilled water(TDW) and antifreeze solution containing ethylene glycol was used to observe resistance change. Resistance of TDW was taken 28 days to reach preset value, and effect on fuel cell operation was not observed. Resistance of antifreeze solution was not reached to preset value up to 48 days, but performance failure occurred presumably caused by bipolar plate junction resulting stoppage resistance experiment. Generally PEMFC humidification is performed near-saturated operating conditions at various temperatures and pressures, but non-humidifying condition could be applied in small scale fuel cell to improve efficiency and reduce system cost. However, it was difficult to operate large scale fuel cell without humidifying, especially higher than $50{\sim}60^{\circ}C$. In case of small flux such as 0.78 L/min, temperature difference between inlet and outlet was occurred larger than other cases resulting performance decrease. Non-humidifying performance experiments were done at various cell temperature. When both of anode and cathode humidification were removed, cell performance was strongly depended on cell operating temperature.