• Journal of the Korean Society of Radiology
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• v.14 no.5
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• pp.545-552
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• 2020

The purpose of this study is to derive a lead thickness calculation formula for direct-shielded doors based on NCRP Report No.151 and IAEA Safety Report Series N0.47. After deriving the dose rate calculation formula for the direct shielded door, this formula was substituted for the lead shielding thickness calculation formula to derive the shielding thickness calculation formula at the door. The lead shielding thickness calculated from the derived direct shielded door shielding thickness calculation formula was about 6% lower than that calculated by the NCRP and IAEA secondary barrier shielding thickness calculation methods. This result is interpreted as meaning that the thickness calculation is more conservative from the NCRP and IAEA secondary barrier shielding thickness calculation methods and fits well for secondary beam shielding. In conclusion, it is thought that the formula for calculating lead shielding thickness of the direct shielded door derived in this study can be usefully used in the shield design of the door.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.34 no.5
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• pp.465-469
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• 2010

Air heater used in power plant helps increase the thermal efficiency of the boiler by recovering the heat from the boiler flue gas and thus preventing the loss of useful heat. This study investigates the effect of preventive maintenance on the performance of the air heater in a power plant. Performance indexes for the air heater are calculated to observe the changes in the performance and operation status of the air heater before and after preventive maintenance. The major performance indexes considered are temperature efficiency of the flue gas side, air leakage rate, heat recovery rate, heat transmission rate, and heat capacity ratio. The performance of the air heater is evaluated before and after preventive maintenance; our results show that all the abovementioned performance indexes are improved after the maintenance.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.5
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• pp.9-15
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• 2000

The 3 ${\mu}{\textrm}{m}$-thick PVDF (polyvinylidene fluoride) thin film have been prepared using physical vapor deposition with electric field, and its FT-IR spectrum, dielectric property and electric conduction phenomenon have been investigated. Since the characteristic peaks are detected at 509.45 ［$cm^{-1}$ /］ and 1273.6 ［$cm^{-1}$ /］in the FT-IR spectrum, we are confirmed that the $\beta$ -phase is dominant in the PVDF thin film. In the results of dielectric properties, the PVDF thin film shows anomalous dispersion, i.e. gradual decrease of dielectric constant with increase of frequency, and also that the dielectric absorption point changes from 200 Hz to 7000 Hz with increasing temperature of thin film, which is consistent with the Debye's theory. The activation energy ( $\Delta$H) obtained from temperature dependence of dielectric loss is 21.64 ㎉/mole. We confirm that the electric conduction mechanism of PVDF thin film is dominated by ionic conduction by investigating the dependence of the leakage current of the thin film on the temperature and the electric field.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.6 no.1
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• pp.89-98
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• 2002

Optical current sensor and optical voltage sensor modules were designed and fabricated to improve measurement error and insulation in automatic power distributor By using Faraday effect, optical current sensor with an $\alpha$-iron core was designed and fabricated to minimize current induction of the other phase and was optimized to maintain linearity. Optical voltage sensor was fabricated owing to the pockets effect and adopted spatial electric field type because of small room in an automatic power distributor. To connect a distributor with an external terminal for signal processing, optical multi connector was designed, fabricated and tested for coupling loss and gas leakage. The linearity of optical current sensor for applied current maintains variation of smaller than 2.5% for applied current range from 20A to 700A. The linearity of optical voltage sensor was smaller than 1% for appling voltage from 6.6kV to 19.8kV. Since the measured characteristics are good, these devices can be considered as being applicable in practice.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.85-85
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• 2007

최근 귀금속중의 하나인 Ruthenium(Ru)은 높은 일함수, 누설전류에 대한 높은 저항성등의 톡성으로 인해 캐패시터의 하부전극으로 각광받고 있다. 하부전극으로 증착된 Ru은 일반적으로 각 캐패시터의 분리와 평탄화를 위해 건식식각이 이루어진다. 하지만, 건식식각 공정중 유독한 $RUO_4$ 가스가 발생할 수 있으며, 불균일한 캐패시터 표면을 유발할 수 있다. 이러한 문제점들을 해결하기 위해 CMP 공정이 필요하게 되었다. 하지만, Ru은 화학적으로 매우 안정하기 때문에 Ru CMP 슬러리에 대한 연구가 필요하게 되었으며, 이에 대한 연구가 활발히 진행되고 있다. 본 연구에서는 Ru CMP 공정에서 Chemical A가 에칭제 및 산화제로 사용된 슬러리의 pH 변화와 pH 적정제에 따른 영향을 살펴보았다. Ru wafer를 이용하여 static etch rate, passivation film thickness와 wettability를 pH와 pH 적정제에 따라 비교해 보았다. 또한, pH 적정제로 $NH_4OH$와 TMAH를 이용하여 pH별 슬러리를 제작하고 CMP 공정을 실시하여 Ru의 removal rate을 측정하였다. $NH_4OH$와 TMAH의 경우 각각 130. 100 nm/min의 연마율이 측정된 pH 6에서 가장 높은 연마률을 보였으며, TMAH의 경우가 pH 전 구간에서 $NH_4OH$에 비해 낮은 연마율이 측정되었다. TEOS 에 대한 Ru의 선택비를 측정해 본 결과, $NH_4OH$의 경우 pH 8~9. TMAH의 경우 pH 6~7에서 높은 selectivity를 얻을 수 있었다.

• Progress in Medical Physics
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• v.16 no.3
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• pp.111-115
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• 2005

We have designed the multi channel detector for the quality assurance of clinical photon beams. The detector was composed of solid phantom inserted by six plane-parallel ionization chambers at different depth. The chamber as a mini plane parallel chamber was made of carbon coated microfilms. In this study the electrical characteristics of the six chambers in the solid phantom were evaluated using 6 MV photon beam. The leakage currents were less than 0.5 pA, reproducibility was less than 0.5$\%$, linearity was less than 0.5$\%$, and dose rate effect was less than 0.7$\%$. In addition the effect of dose variation from other chambers was estimated to maximum 0.8$\%$ approximately. The developed detector can be used for quality determination in output dosimetry or measurement of percentage depth dose approximately for clinical photon beam.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.1
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• pp.29-37
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• 1999

In this study, we have prepared PLT thin films having various La concentrations by using sol-gel method and studied on the effect of La concentration on the electrical properties of PLT thin films. As the La concentration increases from 5mol% to 28mol%, the dielectric constant at 10kHz increases from 428 to 761, while the loss tangent decreases from 0.063 to 0.024. Also, the leakage current density at 150kV/cm has a tendency to decrease from 6.96${\mu}A/cm^2$ to 0.79${\mu}A/cm^2$. In the result of hysteresis loops of PLT thin films, the remanent polariation and the coercive field decrease from 9.55${\mu}C/cm^2$ to 1.10${\mu}C/cm^2$ and from 46.4kV/cm to 13.7kV/cm, respectively. With the result of the fatigue test on the PLT thin films, we have found that the fatigue properties are improved remarkably as the La concentration increases from 5 mol% to 28mol%. In particular, the PLT28) has paraelectric phase and its charge storage clensity and leakage current density at 5V are 134fC/${\mu}cm^2$ and 1.01${\mu}A/cm^2$, respectively. The remanent polarization and coercive field of the PLT(10) film are 6.96${\mu}C/cm^2$ and 40.2kV/cm, respectively. After applying of $10^9$ square pulses with ${\pm}5V$, the remanent polarilzation of the PLT(10) film decreases about 20% from the initial state. In the results, we conclude that the 10mol% and the 28mol% La doped PLT thin films are very suitable for the capacitor dielectrics of new generation of DRAM and NVFRAM respecitively.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.3
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• pp.1-8
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• 2002

In order to study electric properties of (Pb$\_$0.9/La$\_$0.1/)Ti$\_$0.975/O$_3$(PLT (10)) films with varying excess lead concentration (7.5, 10, 12.5, 15 ㏖% excess lead), the PLT films were deposited by sol-gel process. DTA analyses reveal that the crystallization temperature of the precursor powers decreased with increasing amount of excess lead. XRD patterns of PLT reveal pure perovskite structure and the preferred orientation increased with increasing Pb content in the films. With increasing amount of excess P$\_$b/, the relative permittivity ($\xi$$\_$r/) increased and leakage current density at 100 ㎸/cm transformed 4.01$\times$10$\^$-5/, 2.42$\times$10$\^$-6/, 1.27$\times$10$\^$-6/, 1.56$\times$10$\^$-6/A/㎠ respectively. In the results of hysteresis loops measured at 166 kV/cm, the remanent polarization (P$\_$r/) and the coercive field (E$\_$c) are 6.36$\mu$C/cm and 58.7 ㎸/cm, respectively (at 12.5 ㏖% excess P$\_$b/) With increasing amount of excess Pb, the remanent polarization for PLT thin film degraded to about 44%, 27%, 15%, 16% of the initial value after 10$\^$9/ cycles./TEX>) With increasing amount of excess Pb, the remanent polarization for PLT thin film degraded to about 44%, 27%, 15%, 16% of the initial value after $10^{9}$ cycles.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.8
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• pp.113-118
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• 2016

In this paper, a read-in integrated circuit (RIIC) for IR scene projectors (IRSPs) adopting a sub-frame control technique is proposed, which minimizes the reduction of the apparent temperature of the IR images projected from IRSPs operating at a frame rate of 30 Hz. The proposed sub-frame control technique significantly reduces the amount of scene data loss on capacitors, which is caused by leakage currents flowing through MOSFET switches during holding periods, by dividing a unit frame into 8 sub-frames and refreshing the same scene data for each sub-frame. A current-drive RIIC was designed for the higher apparent temperature of IR radiated from the emitter, and it receives the scene data as a form of analog voltages from an external DAC. A prototype chip with a $64{\times}32$ RIIC array was fabricated using Magnachip/SKhynix $0.35{\mu}m$ 2-poly 4-metal CMOS process, and the measured maximum output data current is $230.3{\mu}A$. This amount of current ensures the projection of IR images whose maximum apparent temperature is $366.2^{\circ}C$ in the mid-wavelength IR (MWIR) when applied to a prototype emitter having a resistance of $15k{\Omega}$.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.170.1-170.1
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• 2015

안티모니 (Sb)를 기반으로 한 제2형 초격자 (Type II superlattice, T2SL)구조 적외선 검출기 연구는 2000년대 들어 Sb 계열의 화합물 반도체 성장 기술이 발전함에 따라 HgCdTe (MCT), InSb, 양자우물 적외선 검출기 (QWIP)를 대체할 수 있는 고성능의 양자형 적외선 검출 소재로 부상하였으며, 현재 전 세계적으로 활발한 연구가 진행되고 있다. 특히, 기존의 양자형 적외선 검출소자에 비해 전자의 유효질량이 상대적으로 커서 밴드 간의 투과전류가 줄어들 뿐만 아니라, 전자와 정공이 서로 다른 물질 영역에 분포하여 Auger 재결합률을 효과적으로 줄일 수 있어 상온 동작이 가능한 소재로 주목을 받고 있다. 또한, T2SL 구조는 초격자를 구성하는 물질의 두께나 조성 변화를 통한 밴드갭 변조가 용이하여 단파장에서 장파장 적외선에 이르는 광범위한 파장 대역에서 동작이 가능할 뿐만 아니라 구조적 변화를 통해 이중 대역을 동시에 검출 할 수 있는 차세대 적외선 열영상 소자로 알려져 있다. 본 연구에서는 분자선 에피택시(MBE)법을 이용하여 300 주기의 InAs/GaSb (10/10 ML) 제2형 초격자 구조를 성장하여 적외선 검출소자를 제작하였다. 제2형 초격자 구조를 구성하는 물질계에 p-type dopant인 Be을 이용하여 각각 도핑 농도가 다른 시료를 성장하였다. 이때 p-type 도핑 농도는 각각 $1/5/10{\times}10^{15}cm^{-3}$로 변화를 주었다. 성장된 시료의 구조적 특성 분석을 위해 고분해능 X선 회절 (High resolution X-ray diffraction, HRXRD)법을 이용하였으며, 초격자 한 주기의 두께가 6.2~6.4 nm 로 설계된 구조와 동일하게 성장됨을 확인 하였으며, 1차 위성피크의 반치폭은 30~80 arcsec로 우수한 결정성을 가짐을 확인하였다. 적외선 검출을 위한 $410{\times}410{\mu}m^2$ 크기의 단위 소자 공정을 진행하였으며 이때 적외선의 전면 입사를 위해 소자 위에 $300{\mu}m$의 윈도우 창을 제작하였다. 단위 소자의 측벽에는 표면 누설 전류가 흐르는데 이를 방지하기 위해서 표면보호막을 증착하였다. 적외선 검출 소자의 전기적 특성 평가를 위해 각각의 시료의 암전류 (dark current)와 파장별 반응 (spectral response)을 온도별로 측정하여 비교 및 분석하였다.