• The Journal of the Korea Contents Association
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• v.16 no.10
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• pp.477-482
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• 2016

This paper presents a new method of parity storing for ECC(error correcting code) in SSD (solid-state drive) and suitable structure of the controller. In general usage of NAND flash memory, we partition a page into data and spare area. ECC parity is stored in the spare area. The method has overhead on area and timing due to access of the page memory discontinuously. This paper proposes a new parity policy storing method that reduces overhead and R(read)/W(write) timing by using whole page area continuously without partitioning. We analyzed overhead and R/W timing. As a result, the proposed parity storing has 13.6% less read access time than the conventional parity policy with 16KB page size. For 4GB video file transfer, it has about a minute less than the conventional parity policy. It will enhance the system performance because the read operation is key function in SSD.

• Proceedings of the Korea Information Processing Society Conference
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• 2008.11a
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• pp.828-831
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• 2008

플래시 메모리(Flash Memory) 기술이 빠르게 발전하면서, 플래시 메모리 기반의 저장 장치가 개인용 컴퓨터나 엔터프라이즈 서버 시스템과 같은 시스템에 2차적인 저장 장치로써 사용가능해지고 있다. FTL(Flash Translation Layer)의 기본적인 기능은 플래시 메모리의 논리 주소를 물리 주소로 바꾸는 것임에도 불구하고, FTL의 효율적인 알고리즘은 성능과 수명에 상당한 효과를 가지고 있다. 이 논문에서는 MP3 플레이어와 디지털 카메라, SSDs(Solid-State Disk)와 같은 낸드 플래시 메모리(NAND Flash Memory) 기반의 어플리케이션을 위한 N : N+K 매핑을 사용하는 새로운 FTL 설계를 제안한다. 성능에 영향을 미치는 매개변수들을 분류하여, 다양한 워크로드 분석을 기반으로 FTL을 조사했다. 우리가 제안하는 FTL을 가지고, 낸드 플래시 어플리케이션 가동에 따라 어떤 매개변수가 최대 성능을 낼 수 있는지 알아낼 수 있고, 그 변수들을 유연하게 조정하여 성능을 더 향상시킬 수 있다.

• Proceedings of the Korea Information Processing Society Conference
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• 2012.11a
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• pp.6-7
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• 2012

낸드 플래시 메모리는 저장장치로서 널리 사용되는 소자이다. 플래시 메모리 기반의 저장장치 시스템에서 파일 시스템의 저널링 기능을 사용할 때, 플래시 메모리의 특징을 고려해주는 것이 필요하다. 본 연구에서는 플래시 메모리 기반의 저장장치 시스템에서 파일 시스템의 저널링 연산이 미치는 영향에 대해서 분석해 보고, 오버헤드가 될 만한 부분을 찾아본다. 이러한 오버헤드가 될 만한 부분을 찾아서 제거해줌으로써 플래시 메모리의 사용성을 증대시킬 수 있다.

• Journal of the Korea Society of Computer and Information
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• v.28 no.8
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• pp.1-10
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• 2023

Recently, NAND flash memories have replaced magnetic disks due to non-volatility, high capacity and high resistance, in various computer systems but it has disadvantages which are the limited lifespan and imbalanced operation latency. Therefore, many page replacement policies have been studied to overcome the disadvantages of NAND flash memories. Although it is clear that these policies reflect execution characteristics of various environments and applications, researches on the foundation-policy decision for disk buffer management are insufficient. Thus, in this paper, we propose a foundation-policy recommendation model, called FRM for effectively utilizing NAND flash memories. FRM proposes a suitable page replacement policy by classifying and analyzing characteristics of workloads through machine learning. As an implementation case, we introduce FRM with a disk buffer management policy and in experiment results, prediction accuracy and weighted average of FRM shows 92.85% and 88.97%, by training dataset and validation dataset for foundation disk buffer management policy, respectively.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.8
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• pp.143-150
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• 2013

Solid-state disks (SSDs) have been widely used by high-performance personal computers or servers due to its good characteristics and performance. The NAND flash-based SSDs, which take large portion of the whole NAND flash market, are the major type of SSDs. They usually integrate a cache buffer which is built from DRAM and uses the write-back policy for better performance. Unfortunately, the policy makes existing scheduling methods less effective at the I/F level of SSDs Therefore, in this paper, we propose a scheduling method for the I/F with consideration of the cache buffer. The proposed method considers the hit/miss status of cache buffer and gives higher priority to the read requests. As a result, the requests whose data is hit on the cache buffer can be handled in advance and the read requests which have larger effects on the whole system performance than write requests experience shorter latency. The experimental results show that the proposed scheduling method improves read latency by 26%.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.9 no.3
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• pp.710-716
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• 2008

This paper covers the performance evaluation of two flash memory-based file storages, NAND and NOR, which are the major flash types. To evaluate their performances, we set up separate file storages for the two types of flash memories on a PocketPC-based experimental platform. Using the platform, we measured and compared the I/O throughputs in terms of buffer size, amount of used space, and kernel-level write caching. According to the results from our experiments, the overall performance of the NAND-based storage is higher than that of NOR by up to 4.8 and 5.7 times in write and read throughputs, respectively. The experimental results show the relative strengths and weaknesses of the two schemes and provide insights which we believe assist in the design of flash memory-based file storages.

• Proceedings of the Korean Information Science Society Conference
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• 2011.06b
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• pp.434-437
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• 2011

낸드 플래시 메모리는 하드 디스크와는 다른 여러가지 특성 때문에 논리 주소를 불러 주소를 변환해 주는 주소 변환 계층(FTL)이 필요하다. 최근에 고성능의 저장 장치를 제공하기 위해서 페이지 수준의 주소 변환 기법이 많이 사용되고 있는 데, 이 기법은 매핑 정보가 너무 커서 메모리에서 매핑 정보를 관리하기에는 힘들다는 문제와 데이터의 접근 지역성을 잘 활용하지 못하는 문제가 있다. 본 논문에서는 스토리지의 주소 공간을 유닛이라는 단위로 분리하여 페이지 수준의 주소변환을 사용함으로써 매핑 정보를 크기를 줄이고 또한 접근 지역성을 활용하여 가비지 컬렉션 오버해드를 줄이는 유닛 레벨 주소 변환 기법을 제시한다. 실험결과 제시한 기법은 페이지 매핑 기법보다 랜덤 접근 패턴에서 가비지 컬렉션 오버해드를 40% 감소시켰으며 매핑 데이터 량도 38% 감소시켰다.

• Journal of the Korea Society of Computer and Information
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• v.20 no.6
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• pp.1-11
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• 2015

Recently, NAND flash memories are used for storage devices because of fast access speed and low-power. However, applications of FTL on low power computing devices lead to heavy workloads which result in a memory requirement and an implementation overhead. Consequently, studies of B+-Tree on embedded devices without the FTL have been proposed. The studies of B+-Tree are optimized for performance of inserting and updating records, considering to disadvantages of the NAND flash memory that it can not support in-place update. However, if a general garbage collection method is applied to the previous studies of B+-Tree, a performance of the B+-Tree is reduced, because it generates a rearrangement of the B+-Tree by changing of page positions on the NAND flash memory. Therefor, we propose a novel garbage collection method which can apply to the B+-Tree based on the NAND flash memory without the FTL. The proposed garbage collection method does not generate a rearrangement of the B+-Tree by using a block information table and a proxy block. We implemented the B+-Tree and ${\mu}$-Tree with the proposed garbage collection on physical devices with the NAND flash memory. In experiment results, the proposed garbage collection scheme compared to greedy algorithm garbage collection scheme increased the number of inserted keys by up to about 73% on B+-Tree and decreased elapsed time of garbage collection by up to about 39% on ${\mu}$-Tree.

• Journal of the Korean Institute of Intelligent Systems
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• v.20 no.6
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• pp.761-767
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• 2010

In the case of NAND flash memory, a whole block needs to be erased for update operations because update-in- place operations are not supported in NAND flash memory. Blocks of NAND flash memory have the limited erasure cycles, so frequently updated data (hot data) easily makes blocks worn out. As the result, the capacity of NAND flash memory will be reduced by hot data. In this paper, we propose a wear-leveling algorithm by discriminating hot and cold data based on the update patterns of data. When we applied this scheme to NAND flash memory, we confirmed that the erase counts of blocks became more uniform by mapping hot data to a block with a low erase count and cold data to block with a high erase count.

• Proceedings of the Korea Information Processing Society Conference
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• 2013.05a
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• pp.91-92
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• 2013

현재 낸드 플래시 메모리는 크기가 작고 충격에 강하며 소비전력이 적어 스마트 디바이스의 메인 스토리지로 활용되고 있다. 하지만 읽기, 쓰기 동작 외에 소거 동작의 필요와 메모리 접근 단위의 차이, 쓰기 횟수의 한계 등의 단점이 존재하며 이를 사용하는 파일 시스템은 기존의 파일 시스템과는 다른 복잡한 연산과 다양한 접근 방식이 요구되어지고 있다. 본 논문에서는 이러한 낸드 플래시의 제약을 극복하기 위해 연구되어온 파일시스템들의 특성과 차세대 메모리로 불리는 SCM의 적용으로 얻을 수 있는 장점을 분석하고 향후 연구방향에 대해 모색하도록 한다.