• Proceedings of the KIPE Conference
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• 2000.07a
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• pp.90-94
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• 2000

A conventional power supply to drive a microwave oven has ferro-resonant transformer and high voltage capacitor(HVC). Though it is simple transformer is bulky heavy and has low-efficiency. To improve this defect a high frequency switching inverter-type power supply has been investigated an developed. in recent years. But because of it's additional circuit and devices inverter-type power supply is more expensive than conventional one. In this paper The design procedure of a novel HVC embedded high frequency transformer is proposed for down-sizing and cost reduction. Also transformer equivalent circuit model is derived by FEM analysis and parameter measurements. And the operation of proposed HVC embedded transformer is verified by simulation and experimental results.

• Proceedings of the KIPE Conference
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• 2016.11a
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• pp.220-221
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• 2016

This paper proposes an active switched-capacitor embedded quasi-Z-source inverter (ASC-EqZSI) topology. In order to improve boost ability, One diode and one switch device are added in the qZSI impedance network, and a single dc source is shifted in series with the inductor in the impedance network. The performances of the proposed topology are verified with simulation and experimental results.

• Journal of the Microelectronics and Packaging Society
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• v.8 no.4
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• pp.59-65
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• 2001

Epoxy/$BaTiO_3$composite capacitor films with excellent stability at room temperature, uniform thickness, and electrical properties over a large area ware successfully fabricated. The composite capacitor films with good film formation capability and easy process ability were made from epoxy resin developed for ACF as a matrix and two kinds of $BaTiO_3$powders as fillers to increase the dielectric constant of the composite film. The crystal structure of the powders and its effects on dielectric constant of the films were investigated by X-ray diffraction (XRD). And the optimum amount of dispersant, phosphate ester, was determined by viscosity measurement of suspension. DSC and dielectric property tests were conducted to decide the right curing temperature and the optimum amount of the curing agent. As a result, the capacitors of 7 $\mu \textrm{m}$ thick film with 10 nF/$\textrm{cm}^2$ and low leakage current were successfully demonstrated.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.310-310
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• 2012

최근 전자산업의 발달에 따른 전자제품의 소형화 및 고기능화 요구에 대응하기 위하여 저항(resistor), 커패시터(capacitor), IC (integrated circuit) 등의 수동소자를 개별 칩(discrete chip) 형태로 형성하여 기판의 표면에 실장하는 기술이 일반화되고 있다. 그러나, 수동 소자의 내장 기술은 기판의 패턴 밀도의 급격한 향상과 더불어 수동소자의 내장 공간도 협소해지는 문제점이 있다. 상기의 문제점을 해결하기 위해 개별 칩 형태의 내장형 저항체를 박막 형태의 내장 저항체를 구현하는 기술의 개발이 최근 주목을 받고 있다. 박막 저항체는 기존의 권선저항 및 후막저항과 비교하여 정밀한 온도저항계수를 가지며 이동통신에 적용시 고주파 영역(GHz)에서의 안정성과 주파수 특성이 좋다는 장점들을 가지고 있다. 박막 저항 물질로는 높은 경도와 우수한 열적 안정성을 가지고 있는 TaN (tantalum nitride)이 주로 사용되고 있다. 일반적으로, TaN 박막은 스퍼터링을 사용하며 제조되며 TaN 박막의 성질은 탄탈륨과 질소의 화학정량비, 박막의 결함 정도, 또는 공정압력 및 증착 온도, 플라즈마 파워 등과 같은 공정조건 등의 변화에 민감하게 변화하므로, TaN 박막의 다양한 연구가 더 필요한 실정이다. 본 연구에서는 반응성 마크네트론 스퍼터링을 사용하여 TaN 박막을 Si 기판 위에 증착하였고 TaN 박막의 원하는 특성을 제어할 수 있도록 질소 분압과 total gas volume을 조절하여 공정을 최적화하는 연구를 진행하였다. 또한 tensile pull-off 방법을 이용하여 TaN 박막의 부착강도를 평가하였고, 온도 사이클 및 고온고습 환경에 노출된 TaN 박막들의 열화 특성들에 대하여 연구하였다.

• Journal of the Microelectronics and Packaging Society
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• v.9 no.2
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• pp.11-17
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• 2002

Polymer/ceramic composite is of great interest as a dielectric material for embedded capacitors. This paper is concerned in the effects of $BaTiO_3$ particle size on epoxy/$BaTiO_3$ composite films for embedded capacitors. 6 different size powders smaller than 1 $\mu\textrm{m}$ in diameter and bisphenol-A type epoxy were used for this experiment. Dielectric constant of the epoxy/$BaTiO_3$ composite capacitors increases as the powder size increases at the same powder loading, which is due to the increase of tetragonality of the powders as particle size increases. And leakage current of the capacitors also increases dramatically as the powder size increases. It was explained that this is due to the decrease of the number of $BaTiO_3$epoxy/$BaTiO_3$ potential barriers per unit length and, moreover, the enhancement of potential barrier lowering effects caused by increase of potential drop per one barrier. As a result, there is tradeoff between high dielectric constant and low leakage current in the epoxy/$BaTiO_3$ composite capacitors. So it is important to select proper size $BaTiO_3$ powders in accordance with needs.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.8
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• pp.31-40
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• 2009

This paper presents a design of a high performance DC-DC boost converter as a power module for SOC designs. It applied to this chip that reduced inductor and capacitor for integrating on a chip, and it operates with a switching frequency of 100MHz. It has reliability and stability in high switching frequency. The controller of DC-DC boost converter is designed by voltage-mode control method and compensated properly. The designed DC-DC converter is fabricated with the 0.18${\mu}m$ standard CMOS technology with a thick-gate oxide option. The overall die size is 8.14$mm^2$, and controller size is 1.15$mm^2$. The converter has the maximum efficiency over 76% for the output voltage of 4V and load current larger 300mA. The load regulation is 0.012% (0.5mV) for the load current change of 100mA.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.2
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• pp.378-384
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• 2013

In this paper, a CMOS temperature sensor is proposed to measure the internal temperature of a chip. The temperature sensor consists of a proportional-to-absolute-temperature (PTAT) circuit for a temperature sensing part and a 4-bit analog-to-digital converter (ADC) for a digital interface. The PTAT circuit with the compact area is designed by using a vertical PNP architecture in the CMOS process. To reduce sensitivity of temperature variation in the digital interface circuit of the proposed temperature sensor, a 4-bit successive approximation (SA) ADC using the minimum analog circuits is used. It uses a capacitor-based digital-to-analog converter and a time-domain comparator to minimize power consumption. The proposed temperature sensor was fabricated by using a $0.25{\mu}m$ 1-poly 6-metal CMOS process with a 2.5V supply, and its operating temperature range is from 50 to $150^{\circ}C$. The area and power consumption of the fabricated temperature sensor are $130{\times}390{\mu}m^2$ and $868{\mu}W$, respectively.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.17 no.9
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• pp.21-26
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• 2016

This paper presents a step-down DC-DC buck converter with a CCM/DCM dual-mode function for the internal power stage of portable electronic device. The proposed converter that is operated with a high frequency of 1 MHz consists of a power stage and a control block. The power stage has a power MOS transistor, inductor, capacitor, and feedback resistors for the control loop. The control part has a pulse width modulation (PWM) block, error amplifier, ramp generator, and oscillator. In this paper, an external capacitor for compensation has been replaced with a multiplier equivalent CMOS circuit for area reduction of integrated circuits. In addition, the circuit includes protection block, such as over voltage protection (OVP), under voltage lock out (UVLO), and thermal shutdown (TSD) block. The proposed circuit was designed and verified using a $0.18{\mu}m$ CMOS process parameter by Cadence Spectra circuit design program. The SPICE simulation results showed a peak efficiency of 94.8 %, a ripple voltage of 3.29 mV ripple, and a 1.8 V output voltage with supply voltages ranging from 2.7 to 3.3 V.