• 한국정밀공학회지
• /
• 제23권11호
• /
• pp.34-41
• /
• 2006

Nanoimprint lithography is an emerging technology which has an ability to make patterns under 100nm width. Recently many researches have been focused to develop multilayer patterning function in nanoimprint lithography and aligning method is attracting attention as a key technology. $Moir\'{e}$ has been used widely to measure dislocation or deformation of objects and considered one of the best solutions to detect aligning error in nanoimprint lithography. Concentric circular patterns are used to generate a $moir\'{e}$ fringe in this paper and aligning offset and direction are extracted from it. Especially this paper shows the difference of fringe equation of $moir\'{e}$ which can be obtained in nanoimprint process atmosphere from normal one.

• 대한기계학회:학술대회논문집
• /
• 대한기계학회 2005년도 창립60주년 기념 추계 학술대회
• /
• pp.238.1-238.1
• /
• 2005

• 한국정밀공학회:학술대회논문집
• /
• 한국정밀공학회 2005년도 춘계학술대회 논문집
• /
• pp.1140-1144
• /
• 2005

A plastic-based CE (capillary electrophoresis) microchip was fabricated by hot embossing process. A Si mold was made by wet etching process and a PMMA wafer was cut off from 1mm thick PMMA sheet. A micro-channel structure on PMMA substrate was produced by hot embossing process using the Si mold and the PMMA wafer. A vacuum assisted thermal bonding procedure was employed to seal an imprinted PMMA wafer and a blank PMMA wafer. The results of microscopic cross sectional images showed dimensions of channels were well preserved during thermal bonding process. In our procedure, the deformation amount of bonding process was below 1%. The entire fabrication process may be very useful for plastic based microchip systems.

• 한국유변학회:학술대회논문집
• /
• 한국유변학회 2002년도 추계학술발표회 논문집
• /
• pp.59-62
• /
• 2002

No Abstract, See Full Text

• 한국신재생에너지학회:학술대회논문집
• /
• 한국신재생에너지학회 2011년도 춘계학술대회 초록집
• /
• pp.126.1-126.1
• /
• 2011

박막형 태양전지의 효율 향상을 위하여 광확산 패턴이 형성된 기판을 제작하고 이를 이용하여 비정질 실리콘 박막 태양전지를 제작하였다. 나노 임프린트 방법을 사용하여 제작된 광확산 패턴은 불규칙한 마이크로-나노 크기의 미세구조를 가지고 있어 빛의 확산투과 비율을 향상시켜주는 역할을 하였다. 제작된 광확산 기판위에 TCO물질을 증착하고, PECVD법을 사용하여 비정질 실리콘 p-i-n 접합 구조를 형성하였다. 제작된 태양전지 소자를 1.5 AM의 조건에서 I-V 특성을 분석하였으며, 비교군으로 사용된 일본 Asahi 사의 U-type glass에 비해 높은 Jsc 값을 나타내었다. 또한 외부양자효율을 측정함으로써 광확산 패턴에 의한 양자효율 변화를 확인 할 수 있었다.

• 한국전기전자재료학회논문지
• /
• 제19권2호
• /
• pp.130-138
• /
• 2006

We have investigated pattern scaling down of silicon stamps through the oxidation technique, During oxidizing the silicon stamps, silicon dioxide that has 300 nm and 500 nm thickness was grown, and critical deformations were not observed in the patterns. There was positive effect to reduce size of patterns because vertical and horizontal patterns have different orientation. We achieved pattern reduction rate of $26\%$. In addition, the formation of polymer patterns had been investigated with varied temperature and pressure conditions to improve the filling characteristics of polymers during nanoimprint lithography when pattern sizes were few micrometers. In these varied conditions, polymers had been affected by free space compensation and elastic stress relaxation for filling the cavities. Based on the results, defect control which is an important issue in the nanoimprint lithography were facilitated.

• 한국기계가공학회지
• /
• 제12권5호
• /
• pp.30-35
• /
• 2013

In order to increase cell efficiency in crystalline silicon solar cell, reduction of light reflection is one of the essential problem. Until now silicon wafer was textured by wet etching process which has random patterns along crystal orientation. In this study, high aspect ratio patterns are manufactured by nano imprint process and reflectance could be minimized under 1%. After that, screen printed solar cell was fabricated on the textured wafer and I-V characteristics was measured by solar simulator. Consequently cell efficiency of solar cell fabricated using the wafer textured by nano imprint process increased 1.15% than reference solar cell textured by wet etching. Internal quantum efficiency was increased in the range of IR wave length but decreased in the UV wavelength. In spite of improved result, optimization between nano imprinted pattern and solar cell process should be followed.

• 한국정밀공학회:학술대회논문집
• /
• 한국정밀공학회 2003년도 춘계학술대회 논문집
• /
• pp.196-198
• /
• 2003

Classical lithography in semiconductor employs stepper technologies. Limits of this technology are clearly seen at structures below 100nm. Nano-imprinting lithography is a new method for generating patterns in submicron range at reasonable cost. In order to manufacture nano-imprinting lithography(NIL) equipment, several NIL manufacturers have been developing key technologies for realization of nano-imprinting process, recently. In this paper, we've been describe state-of-the-art and technology trends for nano-imprinting lithography equipments.

• 반도체디스플레이기술학회지
• /
• 제12권4호
• /
• pp.15-20
• /
• 2013

Nanoimprint lithography (NIL) is the next generation photolithography process in which the photoresist is dispensed onto the substrate in its liquid form and then imprinted and cured into a desired pattern instead of using traditional optical system. There have been considerable attentions on NIL due to its potential abilities that enable cost-effective and high-throughput nanofabrication to the display device and semiconductor industry. In this paper, a pressure vessel type imprinting system was used to imprint patterns with two type pressure values (25 bar, 30 bar) and two type pressure keeping times (5 min, 10 min). The height of transferred pattern and the thickness of residual layer were measured and effects of pressurization conditions - pressure and pressure keeping time - on the pattern transfer in thermal NIL were investigated.

• 소성∙가공
• /
• 제18권8호
• /
• pp.616-624
• /
• 2009

In this work we demonstrate the hot-embossing process under different forming conditions such as forming temperature, load, and holding time in pressing, in order to determine the suitable conditions required for linear patterning on polymer plates (PC). Results showed that the replicated pattern depth increased in proportion to an increase in the forming temperature, load, and time. The reduction of the workpiece thickness increased according to the holding time in the pressing process. In the process of time, the reduction ratio of the workpiece thickness decreased due to the surface area increment of the workpiece, while the pressure on the workpiece declined. In order to reduce the bulging ratio we introduced a temperature difference between the upper and the lower punch.