• Journal of the Korean Ceramic Society
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• v.52 no.1
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• pp.9-12
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• 2015

Nano-structured electrodes were fabricated to develop efficient photoelectrochemical conversion systems for the synthesis of hydrogen from water and hydrocarbon fuels from $CO_2$. In this work, we compared the photoactivity of rutile $TiO_2$ nanorods grown on FTO and SEED/FTO by a hydrothermal method. An analysis of the microstructures showed that the density of nanorod/SEED/FTO samples, which showed only the (002) peak in their x-ray diffraction patterns, was two times higher than that of a nanorod/FTO sample. The photocurrent density of nanorod/SEED/FTO samples was increased by as much as 40% of the photocurrent density of the nanorod/FTO sample due to the increased specific density of the nanorods. However, the transient time for a recombination of photogenerated electrons and holes was 20 times faster in the nanorod/SEED/FTO. The seed layers are discussed as possible recombination sites.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.3
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• pp.222-227
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• 2010

ZnO nanorods array have been grown on the seed crystal coated Si(100) substrate by hydrothermal method. The growth, structural and optical properties of ZnO nanorods array were investigated with a variation of precursor concentration from 0.01 M to 0.04 M. The array density of grown ZnO nanorods per same area was increased with increasing the concentration of precursor solution. Vertically aligned ZnO nanorods with hexagonal wurtzite structure have highly preferred c-axis orientation along (002) lattice plane. Especially, ZnO nanorods array developed from 0.04 M precursor solution showed a diameter of about 85 nm and length of 1.2 {\mu}m$ without any crystallographic defects. The photoluminescence spectra of ZnO nanorods from heavier precursor concentration exhibited stronger UV emission around 380 nm corresponding with near-band-edge emission.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.59-60
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• 2008

GaN-based light-emitting diodes (LEDs) with ZnO nanorod arrays on a planar indium tin oxide (ITO) transparent electrode were demonstrated. ZnO nanorods were grown into aqueous solution at low temperature of $90^{\circ}C$. Under 20 mA current injection, the light output efficiency of the LED with ZnO nanorod arrays on ITO was remarkably increased by about 40 % of magnitude compared to the conventional LED with only planar ITO. The enhancement of light output by the ZnO nanorod arrays is due to the formation of side walls and a rough surface resulting in multiple photon scattering at the LED surface.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.61 no.11
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• pp.1641-1645
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• 2012

In this study, the ZnO nanorod is grown on the seed layered glass substrate by applying an external electric field to fabricate the ZnO nanorod with the high quality and to increase the yield of the ZnO nanorod. It is possible to grow the definite and clear hexagonal ZnO nanorod as the cathode of the high voltage is connected to the side of the seed layered glass substrate and the anode is connected to the opposite side because more $Zn^{2+}$ ions are located around the ZnO seed layer and are accumulated easily due to the external electric field. As a result, it is succeeded to fabricate the definite hexagonal ZnO nanorod having better structural characteristics by applying the external electric field during the growth process. Therefore, it is demonstrated that the external electric field is effective to fabricate the high quality ZnO nanorod without changing any composition of the ZnO nanorod.

• Korean Journal of Materials Research
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• v.13 no.10
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• pp.668-672
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• 2003

The ZnO nanorods were synthesized using vapor-solid (VS) method on sodalime glass substrate without the presence of metal catalyst. ZnO nanorods were prepared thermal evaporation of Zn powder at $500^{\circ}C$. As-fabricated ZnO nanorods had an average diameter and length of 85 nm and 1.7 $\mu\textrm{m}$. Transmission electron microscopy revealed that the ZnO nanorods were single crystalline with the growth direction perpendicular to the (101) lattice plane. The influences of reaction time on the formation of the ZnO nanorods were investigated. The photoluminescence measurements showed that the ZnO nanorods had a strong ultraviolet emission at around 380 nm and a green emission at around 500 nm.

• Korean Journal of Materials Research
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• v.13 no.6
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• pp.404-408
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• 2003

SiC nanorods have been grown on Si (100) substrate directly. Tetramethylsilane and Ni were used for SiC nanorod growth. After 3minute, SiC nanorod had grown by CVD. Growth regions ware divided by two regions with diameter. The First region consisted of thin SiC nanorods having below 10 nm diameter, but second region's diameter was 10∼50 nm. This appearance shows by reduction of growth rate. The effect of temperature and growth time was investigated by scanning electron microscopy. Growth temperature and time affected nanorod's diameter and morphology. With increasing growth time, nanorod's diameter increased because of the deactivation effect. But growth temperatures affected little. By TEM characterization, grown SiC nanorods consisted of the polycrystalline grain.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.5 no.1
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• pp.13-15
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• 2004

The current driven in an MOSFET is limited by the intrinsic channel resistance. All the other parasitic elements in a device structure play a significant role and degrade the device performance. These other resistances need to be less than 15％ of the channel resistance. To achieve the requirements, we should investigate the methodology of separation and quantification of those resistances. In this paper, we developed the extraction method of resistances using calibrated TCAD simulation. The resistance of the extension region is also partially determined by the formation of a surface accumulation region that forms under the gate in the tail region of the extension profile. This resistance is strongly affected by the abruptness of the extension profile because the steeper the profile is, the shorter this accumulation region will be.

• Journal of the Korean institute of surface engineering
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• v.42 no.2
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• pp.63-67
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• 2009

CdSe is one of the composite semiconductor materials used in hybrid solar cell. CdSe nanorods were fabricated using electrochemical deposition in anodic aluminum oxide (AAO) template. CdSe were deposited from $CdSO_4$ and $H_2SeO_3$ dissolved aqueous solution by direct current electrochemical deposition. Uniformity of CdSe nanorods were dependent on the diameter and the height of holes in AAO. The current density, current mode, bath composition and temperature were controlled to obtained 1:1 atomic composition of CdSe. CdSe electroplating in AAO is bottom-up filling so we applied direct current is better than others for good uniformity of CdSe nanorods. The optimum conditions to obtain 1:1 atomic composition of CdSe nanorods are direct current $10\;mA/cm^2$, 0.25 M $CdSO_4$-5 mM $H_2SeO_3$ electrolytes at room temperature.

• Journal of the Korean institute of surface engineering
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• v.49 no.5
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• pp.472-476
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• 2016

The nano-array of the vertically aligned rod-like particles grown on ZnO coated glass-substrates was obtained via hydrothermal process. ZnO thin film coatings were prepared on the glass substrates using a MOD (metallorganic deposition) dip-coating method with zinc chloride dihydrate as starting material and 2-ethylhexanol as solvent. ZnO nanorods were synthesized on the seeded substrates by hydrothermal method at $80^{\circ}C$ using zinc-nitrate hexahydrate as a Zn source and sodium hydroxide as a mineralizer. Under the hydrothermal condition, the rod-like nanocrystals were easily attaching on the already ZnO seeded (coated) glass surface. It has been shown that the hydrothermal synthesis parameters are key factors in the nucleation and growth of ZnO crystallites. By controlling of hydrothermal parameters, the ZnO particulate morphology could be easily tailored. Rod-shaped ZnO arrays on the glass substrates consisted of elongated crystals having 6-fold symmetry were predominantly developed at high Zn precursor concentration in the pH range 7~11.

• Journal of the Korean institute of surface engineering
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• v.36 no.3
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• pp.234-241
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• 2003

SiC nanorod was synthesized directly on Si substrate using hexamethyldisilabutane and Fe catalyst with (111) direction. Fe acted a liquid catalyst at growth condition. Grown SiC nanorod has about 30nm diameter and $5{\mu}m$ length. SiC nanorod growth was divided by trro regions with diameter distribution. This diameter distribution were occurred by surface deposition at as - grown nanorod's surface by limitation of growth rate. At higher temperature, these division not occurred. Growth temperature and flow rates affected diameter and morphology of nanorods. With increasing flow rate of source gas, nanorod's diameter increased because of deactivation effect. Case of the increasing temperature, growth rate increased so deactivation did not occurred.