• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.14 no.3
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• pp.31-37
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• 2015

In this paper, newly proposed dual-band microstrip antennas using stacked inverted-L-shaped parasitic elements are presented for GPS $L_1(1.575GHz)$ and $L_2(1.227GHz)$ bands. For making dual band which has large interval, ${\lambda}/4$($L_1$ band) inverted-L-shaped parasitic elements were stacked at both side of radiation apertures on the half-wavelength($L_2$ band) patch antennas. The resonance in the parasitic elements occurs through coupling to the patch. Next, due to using circular polarization at GPS, ${\lambda}/4$($L_1$ band) inverted-L-shaped parasitic elements was stacked using sequential rotation technique on the patch and both side of the diagonal corners of the antenna were eliminated to make dual-band circular polarization. The designed circular polarized antenna's dimensions are $0.43{\lambda}L{\times}0.43{\lambda}L{\times}0.06{\lambda}L$ (${\lambda}L$ is the free-space wavelength at 1.227 GHz). Measured -10 dB bandwidths was 120 MHz(7.6%) and 82.5 MHz(6.7%) at GPS $L_1$ and $L_2$ bands. and 3 dB axial ration bandwidths are 172 MHz(10.9%) and 25 MHz(2.03%), respectively. All of these cover the respective required system bandwidths. Within each of the designed bands, broadside radiation patterns were observed.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.2
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• pp.1-10
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• 1999

Direct extraction of FET's small signal model parameters needs predetermined parasitic elements usually obtained under forward cold FET conditionl This paper derives analytic intrinsic model for cold FET's and shows that normal cold FET condition can replace forward cold FET condition for extracting parasitic elements. Then, we track the error of hot FET's small signal model bounded by the cold FET condition and examine the validness of cold parasitic resistances by checking the existence of the error minimum.

• Proceedings of the KIPE Conference
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• 2012.07a
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• pp.156-157
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• 2012

최근 국내에서도 다양한 형태의 전력반도체 모듈이 개발되고 있으며 대용량화에 따라 전력반도체 패키지 내부에 소자의 병렬연결이 흔히 사용되고 있다. 이에 따라 회로의 구조에 따른 기생 임피던스, 즉, 인덕턴스와 저항 성분은 개별 소자의 안전영역(SOA)을 넘는 스트레스를 발생시키고 고장을 일으킬 수 있다. 이러한 기생 임피던스를 모듈 설계 단계에서 시뮬레이션을 통해 분석하여 이에 의한 영향을 예측하고 설계에 반영하여 고 신뢰성 차량용 전력반도체 모듈을 개발하고자 한다.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2003.05a
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• pp.112-115
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• 2003

Sub-90nm급 high speed 소자를 위해서는 extension영역의 shallow junction과 sheet 저항의 감소가 필수적이다. 일반적으로 기생저항은 channel저항의 약 10-20%정도를 차지하도록 제작되므로, 이를 최소화하여 optimize하기 위해서는 기생저항에 대한 성분 분리와 이들이 가지는 저항값에 대한 정량적 계산이 이루어져야 한다. 이에 본 논문은 calibration된 TCAD simulation을 통해 90nm급 Tr. 에서 각 영역의 저항성분을 계산, 평가하는 방법을 제시한다. 이 결과, 특히, extension영역의 표면-accumulation부분이 가장 개선이 있어야 할 부분으로 분석되었으며, 이 저항은 gate하부에 존재하는 extension으로부터 발if되는 측면 doping의 tail영역으로 인해 형성되는 것으로,doping의 abruptness가 가장 중요한 factor인 것으로 판단된다.

• The Journal of the Korea institute of electronic communication sciences
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• v.13 no.3
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• pp.533-538
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• 2018

For WLAN dual-band operation, a modified Yagi dipole antenna is presented. The modified dipole antenna consists of a dipole antenna with open sleeves and parasitic elements. The parasitic elements are used for the practical application of the radiation patterns and high-gain operation at the WLAN dual band. The experimental results showed that the achieved impedance bandwidths were 320 MHz (2.4 to 2.72 GHz) and 640 MHz (5.04 to 5.68 GHz), respectively. The measured maximum gain at the two WLAN bands was 7.74 dBi and 6.93 dBi, respectively.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.27 no.12
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• pp.1059-1068
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• 2016

This paper proposes slow wave structure(SWS) utilized to increase antenna gain of printed dipole antenna(PDA) and to suppress sidelobe level simultaneously, and makes sure of electrical characteristics of the antenna according to parameter variations of components of the slow wave structure. The printed slow wave structure which is composed of a dielectric substrate and a metal rods array is located on excited direction of the PDA, affecting the radiation pattern and its intensity. Parasitic elements of the metal rods are arrayed in narrow consistent gap and have a tendency to gradually decrease in length. In this paper, array interval, element length, and taper angle are selected as the parameter of the parasitic element that effects radiation characteristics. Magnitude and phase distribution of the electrical field are observed and analyzed for each parameter variations. On the basis of these results, while the radiation pattern is analyzed, array methods of parasitic elements of the SWS for high gain characteristics are provided. The proposed antenna is designed to be operated at the Wifi band(5.15~5.85 GHz), and parameters of the parasitic element are optimized to maximize antenna gain and suppress sidelobe. Simulated and measured results of the fabricated antenna show that it has wide bandwidth, high efficiency, high gain, and low sidelobe level.

• Journal of IKEEE
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• v.7 no.2 s.13
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• pp.172-180
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• 2003

Based on simulation results and accompanying analysis, we suggest a thyristor-type ESD protection device structure suitable for implementation in standard CMOS processes to reduce the parasitic capacitances added to the input nodes, which is very important in CMOS RF ICs. We compare DC breakdown characteristics of the suggested device to those of a conventional NMOS protection device to show the benefits of using the suggested device for ESD protection. The characteristic improvements are demonstrated and the corresponding mechanisms are explained based on simulations. Structure dependencies are also examined to define the optimal structure. AC simulation results are introduced to estimate the magnitude of reduction in the added parasitic capacitance when using the suggested device for ESD protection. The analysis shows a possibility of reducing the added parasitic capacitance down to about 1/40 of that resulting with a conventional NMOS protection transistor, while maintaining robustness against ESD.

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.14 no.5
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• pp.38-43
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• 2015

In this paper, we present novel dual-band microstrip antennas using inverted-L-shaped parasitic elements vertically at radiation apertures for GPS L1(1.575 GHz) and L2(1.227 GHz) bands. For making dual band which has large interval, the inverted-L-shaped parasitic element was loaded at the radiation aperture of a half-wavelength patch antenna(GPS L1) in opposite direction of the feeding point for receiving the low frequency(GPS L2). The low frequency occurs by perturbation and coupling between the patch and parasitic. Next, due to use circular polarizations at the GPS applications, two inverted-L-shaped parasitic elements were loaded at radiation apertures of each polarizations and the feeding point was moved at diagonal part of the patch. The dimensions of the designed circularly polarized antenna were $88.5{\times}79{\times}10.4mm^3$ ($0.36{\lambda}L{\times}0.32{\lambda}L{\times}0.04{\lambda}L$, ${\lambda}L$ is the free-space wavelength at 1.227 GHz). Measured -10 dB bandwidths were 116.3 MHz(7.4%) and 64.3 MHz(5.2%) at GPS L1 and L2 bands, respectively. All of these cover the respective required system bandwidths. The measured 3 dB axial ratio bandwidths were 11.7 MHz(0.74%) and 14 MHz(1.14%), respectively. Within each of the designed bands, broadside radiation patterns were observed.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2000.11a
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• pp.248-251
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• 2000

본 논문에서는 SIEMENS사의 BAS125 소자의 I-V curve에서 RF신호를 고려하여 파라미터를 추출하였으며, 바이어스에 독립적인 외부소자를 추출하고, 바이어스에 종속적인 접합캐패시터를 S-parameter를 fitting하여 추출하였다.

• Proceedings of the Optical Society of Korea Conference
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• 2003.07a
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• pp.230-231
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• 2003

SOI (Silicon On insulator)는 SiO$_2$와 같은 절연체 위에 실리콘 (Si) 박막층이 놓여있는 구조로서 전자나 광소자들이 실리콘 박막층 위에 만들어진다. SOI의 기본적인 생각은 기생 정전용량 (parasitic capacitance)을 감소시킴으로서 소자의 스위칭 속도를 더 빠르게 하는 것이다. 최근에 초고속 광소자와 단위 광소자들의 집적을 위해 실리콘 이외의 GaAs, InP, SiC 등의 반도체 박막을 절연층 위에 만드는 연구가 많이 진행되고있다. (중략)