• Title/Summary/Keyword: 금속-Al2O3

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Electrical Properties of SiC Composites by Transition Metal (천이금속에 따른 SiC계 복합체의 전기적 특성)

  • Shin, Yong-Deok;Seo, Je-Ho;Ju, Jin-Young;Ko, Tae-Hun;Kim, Young-Bek
    • Proceedings of the KIEE Conference
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    • 2007.07a
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    • pp.1303-1304
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    • 2007
  • The composites were fabricated, respectively, using 61[vol.%]SiC-39[vol.%]$TiB_2$ and using 61[vol.%]SiC-39[vol.%]$ZrB_2$ powders with the liquid forming additives of 12[wt%] $Al_{2}O_{3}+Y_{2}O_{3}$ by hot pressing annealing at $1650[^{\circ}C]$ for 4 hours. Reactions between SiC and transition metal $TiB_2$, $ZrB_2$ were not observed in this microstructure. ${\beta}{\rightarrow}{\alpha}$-SiC phase transformation was occurred on the SiC-$TiB_2$ and SiC-$ZrB_2$ composite. The relative density, the flexural strength and Young's modulus showed the highest value of 98.57[%], 226.06[Mpa] and 86.38[Gpa] in SiC-$ZrB_2$ composite at room temperature respectively. The electrical resistivity showed the lowest value of $7.96{\times}10^{-4}[{\Omega}{\cdot}cm]$ for SiC-$ZrB_2$ composite at $25[^{\circ}C]$. The electrical resistivity of the SiC-$TiB_2$ and SiC-$ZrB_2$ composite was all positive temperature coefficient resistance (PTCR) in the temperature ranges from $25[^{\circ}C]$ to $700[^{\circ}C]$. The resistance temperature coefficient of composite showed the value of $6.88{\times}10^{-3}/[^{\circ}C]$ and $3.57{\times}10^{-3}/[^{\circ}C]$ for SiC-$ZrB_2$ and SiC-$TiB_2$ composite in the temperature ranges from $25[^{\circ}C]$ to $700[^{\circ}C]$.

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Growth of Pinus densiflora Seedlings in Artificially Acidified Soils (인위적인 토양 산성화가 소나무 묘목의 생장에 미치는 영향)

  • Lee, Choong-Hwa;Lee, Seung-Woo;Kim, Eun-Young;Kim, Young-Kul;Byun, Jae-Kyoung;Won, Heong-Gyu;Jin, Hyun-O
    • The Korean Journal of Ecology
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    • v.28 no.6
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    • pp.389-393
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    • 2005
  • This study was carried out to investigate the effects of soil acidification on the growth of 3-year-old Pinus densiflora seedlings grown for 21 weeks in brown forest soils acidified with $H_2SO_4$ solution. The concentrations of Al in the acidified soils were increased with increasing amount of $H^+$ added to the soil. The total dry weight of the seedlings was reduced by the addition of the $H_2SO_4$ solution. In addition, there was a strong positive correlation (r=0.97, p<0.01) between the dry weight of the seedlings and the molar (Ca+Mg+K)/Al ratio of the soil. The seedlings with the molar (Ca+Mg+K)/Al ratio of 1.0 resulted from approximately 50% growth reduction compared with the control value. The results suggest that the molar (Ca+Mg+K)/Al ratio of the soil may be a useful indicator for assessing the critical load of acid deposition.

V3Si 나노입자 메모리소자의 열적안정성 및 전하누설 근원분석

  • Kim, Dong-Uk;Lee, Dong-Uk;Jo, Seong-Guk;Kim, Eun-Gyu;Lee, Se-Won;Jeong, Seung-Min;Jo, Won-Ju
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.302-302
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    • 2012
  • 최근 비 휘발성 메모리 시장의 확대와 수요가 많아지면서, 비휘발성 메모리 소자의 제작에 대한 연구가 활발히 진행되고 있다. 특히, 실리사이드 나노입자를 적용한 소자는 현 실리콘 기반의 반도체 공정의 적용이 용이하다. 따라서 본 연구에서는 실리사이드 계열의 화합물 중에서 일함수가 4.63 eV인 Vanadium silicide (V3Si) 나노입자 메모리소자를 제작하여 전기적 특성과 열 안정성에 대하여 알아보았다. p-Si기판에 약 6nm 두께의 SiO2 터널층을 건식 산화 방법으로 성장시킨 후 V3Si 나노입자를 제작하기 위해서 V3Si 금속박막을 스퍼터링 방법으로 4 nm~6 nm의 두께로 터널 절연막 위에 증착시켰다. 그리고 컨트롤 절연막으로 SiO2를 초고진공 스퍼터를 이용하여 50 nm 증착하였고, 급속 열처리 방법으로 질소 분위기에서 $800^{\circ}C$의 5초 동안 열처리하여 V3Si 나노 입자를 형성하였다. 마지막으로 200 nm두께의 Al을 증착하고, 리소그래피 공정을 통하여 채널 길이와 너비가 각각 $2{\mu}m$, $5{\mu}m$, $10{\mu}m$를 가지는 트랜지스터를 제작하였다. 제작된 시편의 V3Si 나노입자의 크기와 균일성은 투과 전자 현미경으로 확인하였고, 후 열처리 공정 이후 V3Si의 존재여부의 확인을 위해서 X-ray 광전자 분광법의 표면분석기술을 이용하여 확인하였다. 소자의 전기적인 측정은 Agilent E4980A LCR meter, 1-MHz HP4280A와 HP 8166A pulse generator, HP4156A precision semiconductor parameter analyzer을 이용하여 측정온도를 $125^{\circ}C$까지 변화시키면서 전기적인 특성을 확인하였다. 본 연구에서는 온도에 선형적 의존성을 가지는 전하누설 모델인 T-model 을 이용하여 나노입자 비휘발성 메모리소자의 전하누설 근원을 확인한 후, 메모리 소자의 동작 특성과의 물리적인 연관성을 논의하였다. 이를 바탕으로 나노입자 비휘발성 메모리소자의 열적안정성을 확보하고 소자 특성향상을 위한 최적화 구조를 제안하고자 한다.

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Characteristic Analysis and Effect of Particulate Material in Drinking Water Distribution Networks (상수도관망에서 입자성 물질의 특성분석 및 영향조사)

  • Kim, Do-Hwan;Lee, Doo-Jin;Hwang, Jin-Su;Choi, Doo-Yong
    • Journal of Korean Society of Environmental Engineers
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    • v.35 no.5
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    • pp.312-320
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    • 2013
  • Particulates in drinking water distribution system (DWDS) are mostly influenced by internal corrosion of metal pipes and sediment in pipelines due to the solution of this effect is limited. The particle size, component and properties of compounds for particulates in distributed water are different and the difference of these characteristics will be occurred by the kind of facilities, pipe condition, external factors and supply system etc. In this study, conducting the investigation of water quality in DWDS researches with particulates in the water. Monitoring sites were each water supply reservoir and the end of water supply area in DWDS. To collect particulate material at each sampling site, $47{\phi}$ glass microfiber filter type GF/C was performed using a filtration. Substances that the effect of the turbidity in the water according to particulate suspended solids and inorganic materials is due to the increasing particulates in the end of DWDS were increased. The result of compounds analysis by using X-ray diffraction (XRD) were Goethite (${\alpha}$-FeOOH), Magnetite ($Fe_3O_4$) in the end of DWDS and Quartz ($SiO_2$), Yeelimite ($Ca_4Al_6O_{12}SO_4$) at the effluent of waterworks and reservoirs. There were differences the compounds and sediments in the releasing or remaining water distribution facilities.

The Growth and Characterization of GaN Films by Direct reaction of Ga and $NH_3$ (금속 갈륨과 암모니아의 직접반응에 의한 GaN 후막성장과 특성 연구)

  • Yang, Seung-Hyeon;Nam, Gi-Seok;Im, Gi-Yeong;Yang, Yeong-Seok
    • Korean Journal of Materials Research
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    • v.10 no.3
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    • pp.241-245
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    • 2000
  • Thick GaN films were grown on (0001) sapphire substrates using the direct reaction gallium and ammonia. The GaN films grew dominantly along [0002] direction, but included the growth of GaN(1010) planeq with V-shaped facetted surfaces at low temperature. With increasing growth temperature, however, the growth of GaN (1010) and (1011) planes was appeared from the films, which gives rise to the growth of hexagonal crystal with pyramid-shaped surface. The growth rate of GaN films increased with increasing growth temperature, but decreased at $1270^{\circ}C$ because the GaN films began to decompose into Ga and N at the temperature. It seemed that the crystal and optical qualities of the GaN films improve with increasing $NH_3$ flow rate. From X-ray diffraction (XRD) and photoluminescence (PL) measurements, it was observed that the yellow luminescence (YL) appeared to be significant as the peak intensity of (1010) plane of XRD spectra increased.

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A Study on Activity Testing of Various Catalysts for Hydrogen Production from Ammonia (암모니아로부터 수소 제조를 위한 다양한 촉매 활성 테스트에 관한 연구)

  • JAE-HYEOK LEE;KYOUNG-HA SHIN;JINSIL KANG;HYEONHUI SHIN;SEYEON PARK;YUJIN CHOI;WANGYU SONG;HO-GEUN AHN
    • Transactions of the Korean hydrogen and new energy society
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    • v.34 no.6
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    • pp.587-593
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    • 2023
  • This research project focused on the production of hydrogen through ammonia decomposition reactions while investigating how the reactivity of this process varies when employing different catalysts. Several metal oxide supports (Al2O3, La2O3, CeO2) were utilized as catalysts, with active metals from both the transition metal group (Co, Ni, Fe, Cr, Cu) and the noble metal group (Ru, Rh, Pd, Pt) impregnated onto these supports. Furthermore, the study examined how the reactivity evolves with changes in reaction temperature when employing the prepared catalysts. Additionally, the research delved into the distinctive activation energies associated with each of the catalysts. In this research, In the noble metal catalyst system, the order of high activity for ammonia decomposition reaction to produce hydrogen is Ru > Rh > Pt ≈ Pd. In the transition metal catalyst system, the order of high activity is Co > Ni > Fe > Cr > Cu.

Development of Nitric Acid Free Desmut Solution for the Aluminum Alloy in Alkaline Etching and Acid Desmut Processes (Aluminum 합금소재의 알칼리에칭 공정으로 발생한 Smut 제거를 위한 무질산 혼합산용액 개발)

  • Choo, Soo-Tae;Choi, Sang Kyo
    • Clean Technology
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    • v.9 no.2
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    • pp.57-61
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    • 2003
  • A novel nitric acid-free desmut solution has been developed to remove smut, which is produced from a NaOH etching, on the surface of aluminum alloy metal in metal surface treatment processes. Comparing with the performance of 5% $HNO_3$ desmut solution, the mixed acid solution containing 2% $H_2O_2$, 0.5% HF, and 10% $H_2SO_4$ shows the same effect of smut removal for aluminum alloy samples of A16061 and A15052. To examine the surface alterations of the aluminum samples, in addition, the surface analysis is carried out with scanning electron microscopy (SEM) and electron probe microanalysis (EPMA).

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Utilization of Mine failings from the Jeonju-Il Mine (전주일(全州一) 금속광산(金屬鑛山) 폐광미(廢鑛尾)의 활용(活用) 방안(方案) 연구(硏究))

  • Jeong, Soo-Bok;Chae, Yeung-Bae;Hyun, Jong-Yeong;Kim, Hyung-Seok;Yoon, Sung-Moon
    • Resources Recycling
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    • v.16 no.1 s.75
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    • pp.44-53
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    • 2007
  • The Jeonju-Il mine tailings contain large quantities of $SiO_2\;and\;Al_2O_3$ and lesser quantities of metallic components. In this study, we studied about the possibility of using mine tailings as a raw material in various industries. it was found that the sintered mine tailings had a good quality in every respect such as chromaticity, firing shrinkage and water absorption etc. Therefore if can substitute clay mineral in the ceramic industry. Also it can substitute about 2.94% of the raw materials of ordinary portland cement. We can use the coarse tailing as the fine aggregate for the ready-mixed mortar; and the fine tailing, as the filler for the bituminous paving mixture; because both products were not only suitable for Korea industrial standard in quality, but also environmentally harmless.

Effects of Alkaline Earth Oxides on Electrical Characteristics of Steatite Porcelain (Steatite 자기의 전기적 특성에 미치는 알칼리 토금속 산화물의 영향)

  • 이종근;이병하;전승관
    • Journal of the Korean Ceramic Society
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    • v.16 no.1
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    • pp.31-37
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    • 1979
  • The middle point of composition within the system $MgO-Al_2O_3-SiO_2$ has been studied for applicability as ceramics dielectrics. A Kyul Sung Tale of high purity, magnesia clinker of Sam-wha chemical company, C.P. aluminium oxide, calcium carbonate, red lead, barium carbonate which was made into frit were used the raw materials. A number of steatite ceramics were prepared under carefully controlled condition and the water absorption, linear shrinkage, power factor, dielectric constant and dielectric loss were measured at elevated temperature. When we used magnesia clinker as flux, the quantity of this flux was 0.05mole, sintering temperature was continued for 2 hrs. at 1, 27$0^{\circ}C$. From this conditions, we could get the data whose power factor was 0.142%, water absorption was zero, linear shrinkage was 8.76%, dielectric constant was 5.63, dielectric loss was 0.00799. When we used red lead as flux, the quantity of this flux was 0.033mole and 0.066mole, sintering temperature was continued for 2hrs. at 1, 26$0^{\circ}C$. From this conditions, we could get the data whose water absorption was zero, linear shrinkage was 8.03%, and 8.48%, power factor was 0.136% and 0.062%, dielectric loss was 0.0072 and 0.0037. When we used barium carbonate made into frit as flux, the quantity of this flux was 0.02mole, sintering temperature was continued for 2hrs. at 1, 27$0^{\circ}C$. From this conditions, we could get the data whose water absoption was zero, linear shrinkage was 8.44%, power factor was 0.138%, dielectric constant was 5.69, dielectric loss was 0.0074.

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Polishing Characteristics of passivation layer by abrasive particles and slurry chemical in the Metal CMP process (금속 CMP 공정에서 연마제와 슬러리 케미컬에 의한 passivation layer의 연마특성)

  • Park, Chang-Jun;Seo, Yong-Jin;Lee, Kyoung-Jin;Jeong, So-Young;Kim, Sang-Yong;Lee, Woo-Sun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.05c
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    • pp.45-48
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    • 2003
  • The polishing mechanism of W-CMP process has been reported as the repeated process of passive layer formation by oxidizer and abrasion action by slurry abrasives. Thus, it is important to understand the effect of oxidizer on tungsten passivation layer in order to obtain higher removal rate (RR) and very low non-uniformity (NU%) during W-CMP process. In this paper, we investigated the effects of oxidizer on W-CMP process with three different kinds of oxidizers, such as $H_2O_2$, $Fe(NO_3)_3$, and $KIO_3$. In order to compare the removal rate and non-uniformity of three oxidizers, we used alumina-based slurry of pH 4. According to the CMP tests, three oxidizers showed different removal mechanism on tungsten surface. Also, the microstructures of surface layer by AFM image were greatly influenced by the slurry chemical, composition of oxidizers. The difference in removal rate and roughness of tungsten surface are believed to caused by modification in the mechanical behavior of $Al_2O_3$ abrasive particles in CMP slurry. Our stabilized slurries can be used a guideline and promising method for improved W-CMP process.

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