• Journal of the Korean Professional Engineers Association
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• v.31 no.1
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• pp.74-84
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• 1998

본 지도업체인 쌍희금속은 1988년 2월 설립, 주생산제품은 닉켈합금선으로서 1997년 12월 현재 총매출액 7.4억원(수출 0.12억 포함) 당기순이익 0.32억원으로 종업원 9명을 포함한 개인기업 형태로 특히 총매출액의 6%를 기술투자비율에 할당하고 있는 유망 중소기업이다. 기술지도와 관련한 연선의 선재(線材)는 포항제철의 $^{ø}$8mm 태선(允線)이 주종이나 특수선(特殊線)인 경우는, 국내선재의 경우 멜팅(Melting)기술이 부족하여 독일국으로부터 $^{ø}$5.5 mm의 선재를 직수입에 의존하고 있었다. 한편 세선가공의 선재는 20여개의 Dies공구 가공공정을 통한 $^{ø}$1.3 mm의 선채를 사용하여 $^{ø}$0.6 mm의 세선(細線)을 가공하고 있었다. 그러나 인발(引拔) 기술과 관련함에 특히 Dies 공구로부터 세선(細線)을 제조한 후 마무리 공정에서의 탈지문제가 정립돼있지 못하여 End User로부터 불만사례가 종종 야기 되었다 이의 원인 규명을 기술지도를 통해 조사한 결과 소성가공유(습식형)의 인식 부족이 주원인이였다. 소성가공유의 조성은 일반적으로 식물성. 광물성, 계면활성제, 극압제 등으로 구성됨에 마무리공정에서의 탈지방법은 가공유제의 기재(Base oil)에 따라 다르다 즉 기유(基油)가 광물계인 경우는 탈지제가 용제형(TCE 등)이 양호하나 식물계인 경우는 Alkali계가 양호하다. 따라서 NaOH sol'n2~3%+분산제(기포방지제)로서 음이온인 노닐페놀 0.1~0.3%의 처방을 제시하고 설비로서는 8$0^{\circ}C$로 유지되는 조제된 알칼리 Vessel과 물중탕 설비(열풍설비 포함)등을 대입하는 공정개선으로 Dies를 통과한 중간제품의 세선 $\longrightarrow$ 탈지설비 $\longrightarrow$ 80～85$^{\circ}C$로 유지되는 열처리(Aniling)공정을 대입함에 세선의 가공경화가 없었으며 아울러 수용성 가공유의 관리 한계(사내표준화)를 설정 관리 하도록 지도함으로서 지도 전에 비해 제조원가의 절하 및 생산성 향상은 물론 세선의 신규 탈지제 개발과 공정 개선을 통하여 가열공정의 부하개선 과 최종제품인 절연선의 품질향상을 가져 왔다.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.39 no.4
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• pp.429-435
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• 2015

A bellows is an important temperature control component in a Joule-Thomson micro-cryocooler. It is designed using a very thin shell, and the inside of the bellows is filled with nitrogen gas. The bellows is made of a nickel-cobalt alloy that maintains its strength and elastic properties in a wide range of temperatures from cryogenic to $300^{\circ}C$. The pressure of the gas and the volume within the bellows vary according to the temperature of the gas. As a result, the bellows contracts or expands in the axial direction like a spring. To explore this phenomenon, the deformation of the bellows and its internal volume must be calculated iteratively under a modified pressure until the state equation of the gas is satisfied at a given temperature. In this paper, the modified Benedict-Webb-Rubin state equation is adopted to describe the temperature-volume-pressure relations of the gas. Experiments were performed to validate the proposed method. The results of a numerical analysis and the experiments showed good agreement.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.677-677
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• 2013

최근 석유에너지의 고갈과 휴대용 전자기기의 사용의 증가로 고효율의 배터리의 개발이 요구되고 있다. 생체칩에서 부터 전기자동차, 에너지 저장체까지 광범위한 산업군에 걸처 배터리의 개발이 되고 있어 시장규모의 계속적인 성장이 있을 것으로 전망하고 있다. 현재 상용되고 있는 음극 재료는 카본재료(이론 용량 372 mAh/g)이다. 이 카본재료의 특징은 값이 싸고, 표준 환원전위가 낮아 비교적 높은 전압을 낼 수 있다. 그러나 낮은 에너지밀도를 갖으므로 높은 에너지를 필요로 하는 차세대 산업군인 전기자동차 등에는 적합하지 않은 것으로 평가되고 있다. 그래서 더 높은 에너지 밀도를 갖는 다른 재료들에 대한 연구들이 활발히 이루어지고 있다. 본 연구에서는 음극 재료로서 주석을 선택해서 연구를 하였다. 카본계열의 음극재료의 질량당 이론 에너지 밀도는 372 mAh/g임에 반해 주석같은 경우는 약 991 mAh/g 정도의 비교적 큰 이론용량을 갖고 있다. 하지만, 주석 등 금속, 혹은 금속 합금을 음극재료로 사용할 경우 많은 양의 리튬이 삽입/탈착되면서 약 300% 이상의 부피변화가 있게 된다. 그러한 과정에서 주석이 분쇄되어 떨어지거나 전자를 제공받는 집전체로부터 떨어지게 되고, 이 과정에서 심각한 에너지 밀도의 손실이 일어나게 된다. 이러한 문제점들을 극복하기 위해 다음과 같은 구조들을 고안하여 도금 공정을 사용하여 음극재료를 제작하여 실험을 진행하게 되었다. 도금법은 대면적을 싼 가격으로 할 수 있으며 원하는 두께 및 모폴로지까지 쉽게 조절할 수 있다. 부피팽창에 의한 스트레스를 최소화하기 위해 도금법을 사용하여 나노구조를 만들어 그에 따른 전기화학적 특성 변화를 측정하였다. 다공성 필름인 AAO 디스크의 한 면에 구리를 sputtering 공정을 사용하여 0.5 um 두께의 seed layer 구리 박막을 형성하고 형성된 구리 박막 위에 도금공정을 이용하여 두껍게 구리를 증착함으로 구리 음극 집전체를 형성한다. 그 후 AAO 구조 안에 주석을 도금하면 AAO의 구조를 따라 주석 나노와이어가 형성이 된다. 마지막으로 NaOH로 AAO를 제거해주면 직경 200 nm, 길이 2 um 정도의 주석 나노와이어를 구리 집전체위에 만들 수 있었다. 배터리의 용량을 측정한 결과 안정한 싸이클 특성과 약 400 mAh/g의 에너지 밀도를 갖는 것으로 나타났다.

• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• v.10 no.1
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• pp.21-26
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• 2012

Microstructural and mechanical property were evaluated at the medium-sized HT9 (12Cr-1MoWV) forged steel which was considered as primary candidate for the fuel cladding in sodium-cooled fast reactor (SFR). Material was forged at $1170^{\circ}C$ after the induction melting to make round bar as 160mm diameter, 7000mm length then the radial distribution of microstructure as well as microhardness was evaluated. The results showed that overall microstructure exhibited as ferrite-martensite structure, where small amount (2~3%) of delta ferrite was formed throughout the specimen and maximum 15% of transformed ferrite was formed at the center, where it gradually decreased toward the radial direction. Sensitivity analysis of the cooling curve and Time-Temperature-Transformation (TTT) diagram revealed that formation of transformed ferrite could be avoided when the diameter was decreased down to 120mm.

• Korean Journal of Materials Research
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• v.2 no.6
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• pp.461-467
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• 1992

A fabrication process for SiC whisker preform reinforced AC4A Al composites is being developed. The Al alloy used as the matrix in this study is AC4A. SiC whisker preform made by Tokai Carbon Co. Ltd. Shizuoka, Japan were used. These consisted of $\beta$-type single crystals 0.1 ~ 10${\mu}$m in diameter and 20~10${\mu}$m in length. The most adequate fabrication condition was that whisker preform was preheated up to 750~80$0^{\circ}C$, set into a mould preheated to ~40$0^{\circ}C$, molten Al alloy heated to ~80$0^{\circ}C$ and applied pressure 75MPa. And Si$C_w$reinforced AC4A composite was advanced above twice than AC4AI/M. Also it was not large effect by pressure at Si$C_w$ 20v/o.

• Journal of the Microelectronics and Packaging Society
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• v.23 no.4
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• pp.35-41
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• 2016

Ceramic-metal based high power LED array package was developed via thick film LTCC technology using a glass-ceramic insulation layer and a silver conductor patterns directly printed on the aluminum heat sink substrate. The thermal resistance measurement using thermal transient tester revealed that ceramic-metal base LED package exhibited a superior heat dissipation property to compare with the previously known packaging method such as FR-4 based MCPCB. A prototype LED package sub-module with 50 watts power rating was fabricated using a ceramic-metal base chip-on-a board technology with minimized camber deformation during heat treatment by using partially covered glass-ceramic insulation layer design onto the aluminum heat spread substrate. This modified circuit design resulted in a camber-free packaging substrate and an enhanced heat transfer property compared with conventional MCPCB package. In addition, the partially covered design provided a material cost reduction compared with the fully covered one.

• Journal of Welding and Joining
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• v.13 no.3
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• pp.134-146
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• 1995

Aluminium nitride(AlN) is currently under investigation as potential candidate for replacing alumium oxide(Al$_{2}$ $O_{3}$) as a substrate material for for electronic circuit packaging. Brazing of aluminium nitride(AlN) to Cu with Ag base active alloy containing Ti has been investigated in vacuum. Binary Ag$_{98}$ $Ti_{2}$(AT) and ternary At-1wt.%Al(ATA), AT-1wt.%Ni(ATN), AT-1wt.% Mn(ATM) alloys showed good wettability to AlN and led to the development of strong bond between brate alloy and AlN ceramic. The reaction between AlN and the melted brazing alloys resulted in the formation of continuous TiN layers at the AlN side iterface. This reaction layer was found to increase by increase by increasing brazing time and temperature for all filler metals. The bond strength, measured by 4-point bend test, was increased with bonding temperature and showed maximum value and then decreased with temperature. It might be concluded that optimum thickness of the reaction layer was existed for maximum bond strength. The joint brazed at 900.deg.C for 1800sec using binary AT alloy fractured at the maximum load of 35kgf which is the highest value measured in this work. The failure of this joint was initiated at the interface between AlN and TiN layer and then proceeded alternately through the interior of the reaction layer and AlN ceramic itself.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.34 no.9
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• pp.1227-1233
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• 2010

In the hot section of a gas turbine, the turbine blades were protected from high temperature by providing a thermal barrier coating (TBC) as well as by cooling air flowing through internal passages within the blades. The cooling air then passed through discrete holes on the blade surface, creating a film of cooling air that further protects the surface from the hot mainstream flow. The holes are subjected to stresses resulting from the lateral growth of thermally grown oxide, the thermal expansion misfit between the constituent layers, and the centrifugal force due to high-speed revolution; these stresses often result in cracking. In this study, the deformation and cracks occurring near a hole on a heat-resistant alloy subjected to thermo-mechanical cycling were investigated. The experiment showed that cracks formed around the hole depending on the applied stress level and the number of cycles. These results could be explained by our analytic solution.

• Journal of the Korean Magnetics Society
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• v.5 no.3
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• pp.185-190
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• 1995

Rare earth-aluminum intermetallic compounds $RAI_{2}$ (R ; Lu, Ce, Gd) are prepared by the arc-melt method and the magnetic properties and electronic structures are investigated by magnetic susceptiptibiliy measurements using SQUID magnetometer. The magnetic suceptibiliyof $LuAl_{2}$ is weakly temperature dependent and shows a Pauli susceptibility of $10.1{\times}10^{-5}$ emu/mol, which means 3.2 states/eV/formula unit. On the other hand, the susceptibility data of $CeAl_{2}$ and $GdAl_{2}$ show a Curie-Weiss behavior for paramagnets. The magnetization data at low temperatures confirm that $CeAl_{2}$ undergoes an antiferromagnetic phase transition near 4 K whereas $GdAl_{2}$ a ferromagnetic transition at 170 K. The distinctive magnetic behaviors of $RAI_{2}$ originate from the different 4f band filling.

• Korean Chemical Engineering Research
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• v.52 no.1
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• pp.26-39
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• 2014

Cu interconnection in electronic devices is fabricated via damascene process including Cu electrodeposition. In this review, Cu electrodeposition and superfilling for fabricating Cu interconnection are introduced. Superfilling results from the influences of organic additives in the electrolyte for Cu electrodeposition, and this is enabled by the local enhancement of Cu electrodeposition at the bottom of filling feature formed on the wafer through manipulating the surface coverage of organic additives. The dimension of metal interconnection has been constantly reduced to increase the integrity of electronic devices, and the width of interconnection reaches the range of few tens of nanometer. This size reduction raises the issues, which are the deterioration of electrical property and the reliability of Cu interconnection, and the difficulty of Cu superfilling. The various researches on the development of organic additives for the modification of Cu microstructure, the application of pulse and pulse-reverse electrodeposition, Cu-based alloy superfilling for improvement of reliability, and the enhancement of superfilling phenomenon to overcome the current problems are addressed in this review.