• Applied Biological Chemistry
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• v.33 no.1
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• pp.73-78
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• 1990

Endo-polygalacturonase was purified from tomato, Lycopersicon esculentum L. The purification procedures included gel filtration on Sephadex G-150 and DEAE-cellulose ion exchange chromatography. Yield of the enzyme purification was 12.74 %. Purified enzyme was confirmed as a active single band by the SDS-polyacrylamide gel electrophoresis. When the purified enzyme was applied to SDS-PAGE, the molecular weight was estimated about 50,000. The optimum pH for the enzyme activity was 5.0 and the range of its stability to the pH was 4.0 to 5.0. The optimum temperature was $50^{\circ}C$, while the enzyme was abruptly inactivated above $50^{\circ}C$. From the result of the study on the effects of metals ion, it was found that $Ag^+$, $Zn^{++}$ and $Mg^{++}$ increased on the enzyme activity. In contrast, $Ba^{++}$, $Hg^{++}$, $Pb^{++}$, $Ca^{++}$, $Mn{++}$, $Cu^{++}$, $Fe^{+++}$, $Na^+$ and $K^+$ decreased it. the reaction catalyzed by this enzyme followed typical Michaelis-Menten kinetics with the Km value of $1.43{\times}10^{-1}\;mol/l$.

• Microbiology and Biotechnology Letters
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• v.10 no.3
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• pp.185-190
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• 1982

A strain of Streptomyces sp. (YS-40) which was able to produce penicillinase, was isolated from soil and the enzymatic characteristics of this enzyme were investigated. The crude enzyme was obtained with the fractionation by 80 % cold acetone. The optimal temperature and pH of this enzyme was 45$^{\circ}C$ and 5.0 respectively. The stable pH range of the enzyme was between pH 5.5 and 8.0 at 37$^{\circ}C$. By heat treatment at 6$0^{\circ}C$ and 8$0^{\circ}C$ for 10 min, the remained relative activities were about 50%, 30% respectively. The activity of the enzyme was inhibited by Cu$^{＋＋}$, $_Mn^{＋＋}$, Zn$^{＋＋}$ but Co$^{＋＋}$, Li$^{＋＋}$, $Ca^{＋＋}$, $Mg^{＋＋}$ $Ba^{＋＋}$ did not affect. Among 11 chemical reagents, ethylenedi aminetetra-acetic acid disodium salt (EDTA-2Na), sodium dodecyl sulfate (SDS) and sodium fluoride inhibited the enzyme activity.

• Journal of the Korean Vacuum Society
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• v.11 no.4
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• pp.230-234
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• 2002

Metal-ferroelectric-semiconductor(MFS) capacitors by using rapid thermal annealed $LiNbO_3$/Si structures were successfully fabricated and demonstrated nonvolatile memory operations of the MFS capacitors. The C-V characteristics of MFS capacitors showed a hysteresis loop due to the ferroelectric nature of the $LiNbO_3$thin film. The dielectric constant of the $LiNbO_3$film calculated from the capacitance in the accumulation region in the capacitance-voltage(C-V) curve was about 25. The gate leakage current density of MFS capacitor using a platinum electrode showed the least value of $1{\times}10^{-8}\textrm{A/cm}^2$ order at the electric field of 500 kV/cm. The minimum interface trap density around midgap was estimated to be about $10^{11}/cm^2$.eV. The typical measured remnant polarization(2Pr) value was about 1.2 $\mu\textrm{C/cm}^2$, in an applied electric field of $\pm$ 300 kv/cm. The ferroelectric capacitors showed no polarization degradation up to about $10^{10}$ switching cycles when subjected to symmetric bipolar voltage pulse in the 500 kHz.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.4
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• pp.210-214
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• 2002

The crystallization behavior of amorphous silicon (a-Si) film was investigated by using Cu-field aided lateral crystallization (Cu-FALC) process below $450^{\circ}C$. The lateral crystallization was induced from the Cu deposited region outside of pattern toward the Cu-free region inside of the pattern by applying an electric field during heat treatment. As expected, the lateral crystallization toward Cu-free region proceeded from negative toward positive electrode side. The occurrence of Cu-FALC phenomenon was interpreted in terms of dominant diffusing species in the reaction between Cu and Si. Even at the annealing temperature of $350^{\circ}C$, the large dendrite-shaped branches were formed in the crystallized region and the polarity in the lateral crystallization was clearly observed. Consequently, we could successfully crystallize the a-Si at the temperature as low as $350^{\circ}C$ by an electric field of 30 V/cm with fast crystallization velocity of 12 $\mu$m/h.

• Journal of the Korean Ceramic Society
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• v.39 no.6
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• pp.576-581
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• 2002

In order to simultaneously vitrify the ton Exchange Resin(IER) and Dry Active Waste(DAW) generated from the Nuclear Power Plants, a vitrification pilot test was conducted using an induction cold crucible melter. The PCT result evaluating the chemical durability of the vitrified from showed that the final glass was more durable than the benchmark glass. Liquidus temperature for the final vitrified form was 1048 K(775$\^{C}$) fur heat treatment experiments. The value of the compressive strength for the vitrified form was ninety times higher than the regulation limit, 34 kg/㎠. The glasses on bottom, middle and top of the CCM were homogeneous with no secondary phase. The precipitation of the magnetic metal phase was able to be avoided by simultaneously fEeding of DAW with IER containing strongly reducing organics. Volume reduction factor of 74 was achieved through the vitrification Pilot test for mixed waste.

• Journal of the Korean Ceramic Society
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• v.39 no.6
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• pp.604-609
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• 2002

Nanosized $BaCeO_3$ powders with the stoichiometric composition of a molecular level were synthesized by the citrate process based on the Pechini method. Polymeric precursor was formed by use of citric acid and ethylen glycol, as chelating agent of metal ions and reaction medium, respectively. Single phase orthorhombic structured $BaCeO_3$powders, about 100 nm sized and uniform shaped were obtained through the calcination of the polymeric precursor at $900^{\circ}C$ for 4 h. Extremely small quantities of carbonate ions($CO_^{2-}$) were completely decomposed at over $1100^{\circ}C$. The mean size of the powders was increased twice, however, it has very uniform distribution in its size and shape.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.6
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• pp.272-278
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• 2003

$Bi_4Ti_3O_{12}$ (BIT) and $(Bi_{3.25}La_{0.75})(Ti_{2.97}V_{0.03})O_{12}$ (BLTV) thin films were deposited on ITO/glass substrates by metal organic chemical vapor deposition (MOCVD) using ultrasonic spraying. After deposition of the films in oxygen atmosphere for 30 min, the films were heated by rapid thermal annealing (RTA) method, especially direct insertion, at various temperatures. The films were investigated on phase formation temperature, microstructure and electrical properties. From x-ray diffraction (XRD) patterns, the perovskite phase formation temperature of BLTV thin film was about $600^{\circ}C$ which was lower than that of BIT, $650^{\circ}C$. The leakage current of the BLTV thin film was measured to be $1.52\times 10^{-9}$A/$cm^2$ at an applied voltage of 1 V. The remanent polarization (Pr) and coercive field (Ec) values of the BLTV film deposited at $650^{\circ}C$ were $5.6\muC/cm^2$ and 96.5 kV/cm, respectively.

• Electrical & Electronic Materials
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• v.8 no.1
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• pp.56-63
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• 1995

MESFETs of the Ti/Au and Ti/Pd/Au gate were fabricated on n-type GaAs. Interdiffusion at Schottky interfaces, Schottky contact properties, and MESFET characteristics with heat treatment were investigated. Ti of Ti/Au contact and Pd of Ti/Pd/Au contact acted as a barrier metal against interdiffusion of Au at >$220^{\circ}C$. Pd of Ti/Pd/Au contact acted as a barrier metal even at >$360^{\circ}C$, however, Ti of Ti/Au contact promoted interdiffusion of Au instead of role of barrier metal. As the heat treatment temperature increases, in the case of both contact, saturated drain current and pinch off voltage decreased, open channel resistance increased, and degree of parameter variation in Ti/Au gate was higher than in Ti/Pd/Au gate at >$360^{\circ}C$ Schottky barrier height of Ti/Au and Ti/Pd/Au contacts was 0.69eV and 0.68eV in the as-deposited state, respectively, and Fermi level was pinned in the vicinity of 1/2Eg. As the heat treatment temperature increases, barrier height of Ti/Pd/Au contact increased, however, decreased at >$360^{\circ}C$ in the case of Ti/Au contact. Ideality factor of Ti/Au contact was nearly constant regardless of heat treatment, however, increased at >$360^{\circ}C$ in the case of Ti/Au contact. From the results above, Ti/Pd/Au was stable gate metal than Ti/Au.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.24-24
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• 2010

대형구조물의 구조안정성 진단, 로봇과 같은 지능기계의 제어, 환경오염을 감지하기 위한 센서의 중요성은 날로 증대되고 있다. 이러한 센서의 감도와 성능을 높이기 위해서 소형화, 다기능화, 집적화가 요구되고 있는데, 고성능 센서소자들의 집적화를 위해서 기존에 적용된 벌크형태의 재료들을 박막화하여 다층적층 및 소형화할 필요가 있다. 집적화 센서의 구현에 있어서 전극박막은 센서의 특성을 좌우하는 중요한 역할을 한다. 일반적으로 금속박막이 전극으로 사용되고 있으나 열적 불안정성 및 박리현상의 문제점을 지니고 있다. 따라서 이를 해결하기 위해 전도성산화막을 전극으로 적용하고자하는 연구가 요구되고 있다. 전도성산화막을 전극으로 적용하면 센서소자의 성능이 개선되는 경향이 있다. $Sr_2FeMoO_6$(SFMO) 산화물은 자기장을 인가했을 때 저항이 감소하는 CMR(colossal magnetoresistance) 물질이며 상온비저항이 낮은 것으로 알려져 있다. 이중 페롭스카이트 (double perovskite) 구조를 갖는 $Sr_2FeMoO_6$ 박막은 센서소자의 전극으로 적용 가능할 것으로 생각되어 박막을 제조하고자 하였으며 미세구조와 전기전도 특성을 조사하였다. 박막제조를 위해서는 RF 스퍼터법을 사용하였다. 스퍼터를 위한 타겟은 고상반응법으로 분말타겟을 제조하였다. Ar/$O_2$ 가스 유랑변화, 압력변화, 기판 온도변화가 박막의 상형성 등 박막특성에 미치는 영향을 조사하였다. 기판으로는 $SiO_2$(100nm)/Si 기판을 사용하였다. 증착직후에는 비정질막이 얻어졌으며 SFMO 상을 만들기 위해서는 후열처리가 필요하였는데, 환원성 가스 분위기 [$H_2$(5%)/Ar] 에서 열처리 조건을 최적화하여 이중 페롭스카이트 구조의 단일상 박막을 제조할 수 있었다. SFMO 단일상 박막은 증착시에나 후열처리 시 산소의 억제가 중요함을 알 수 있었다.

• Journal of the Korean Institute of Telematics and Electronics
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• v.21 no.4
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• pp.52-57
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• 1984

The electrical properties and their instability of InP tunnel MIS diodes fabricated by inserting the chemically grown oxide between metal and n-lnP (100) surface have been in-vestigated. The structure of the gown oxide was the mixture of In2O3 and P2O5, as was other low-temperature grown oxide, and its thickness was estimated to be the order of 200 $A^{\circ}$. The forward and reverse currents increased even with slight heat treatment of diodes in vacuum, and they were reduced when the diodes were exposed to humid ambient. It was discussed that the observed instability in I-V characteristics is due to a change of the physicochemical properties of the oxide film and of the interface states between oxide and InP according to the absorption of H2O.