• Proceeding of EDISON Challenge
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• 2013.04a
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• pp.250-251
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• 2013

탄화규소(SiC)는 물리적 성질이 뛰어나 여러 전자기기에 다양한 활용 가능성이 제시되고 있다. 이 논문에서는 2D 구조의 탄화규소 벌집 구조에 대하여 전자 구조 계산을 수행하고 탄소와 규소의 2D 구조체와 전자구조적 차이점을 논의했다. 단원자 2D 구조와는 달리 탄화규소의 합성 구조는 반도체의 성질을 띄는 것으로 나타났고, 이는 두 원자 간의 전기음성도 차이로 인한 전자의 국소화 현상 때문인 것으로 분석되었다.

• 한국해양학회지
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• v.29 no.1
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• pp.5-16
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• 1994

Particulate biogenic silica (PBSi), diatom abundance and dissolved silicate were measured in the Nakdong River estuary from March, 1991 to April, 1992. The PBSi concentrations were in the range of 0.40∼11.45 ug-at/l with being relatively high in spring and fall. The concentrations were higher in inner Bay than in outer Bay. In vertical profiles, the concentrations showed maximum in the surface layer, decreasing with depth, and then increased slightly in the bottom layer. the PBPi concentrations were related with diatom abundances, but the relatively high ratios of PBSi concentrations were related with diatom abundances, but the relatively high ratios of PBPi to diatom abundance (ca.500 pgSi$.$cell/SUP -1/) suggest that there be much detrital PBSi. The source of dissolved silicate was the Nakdong River discharge and the dissolved silicate does not seem to be a limiting factor of diatom growth due to relatively high concentration during the study period. the silicate concentrations in the bottom layer seem to be related with the PBSi concentrations existed just before the sampling time in addition to river discharge. Relatively low ratios of PBSi to POC (average 0.2 gSi$.$gC/SUP -1/) and relatively high ratios of POC to chlorophyll a (ca. 900) suggest that much detrital POC comprise the total POC.

• The Korean Journal of Pesticide Science
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• v.4 no.2
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• pp.44-49
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• 2000

Objective of this study was to determine the Si distribution and extent of control of powdery mildew diseases of cucumber(Cucumis sativus L.). The distribution of silicon in the leaf epidermis of cucumber plants grown in hydroponic nutrient solutions supplemented with soluble silicates was examined using scanning electron microscopy and energy dispersive X-ray analysis. The silicate absorbed from nutrient solution was translocated into cucumber leaves, and accumulated mainly in the cells surrounding the base of trichome hairs. Base cells surrounding the trichomes also had high levels of Si, Ca, and K. Si levels in the epidermal cells for low Si treatment were not detectable except in the trichome bases. Hyphal lengths of powdery mildew occurring on cucumber leaves cultivated in medium with high concentration of silicate were remarkably shorter than those of cucumber leaves cultivated with low concentration of silicate. There was a negative correlation between hyphal length of S. fuliginea and silicate concentrations.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.15 no.2
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• pp.45-50
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• 2005

During oxidation process, several type of defects are formed on the surface of the silicon crystal which was damaged mechanically before oxidation. As the size of abrasive particle increases multiple dislocation loops are produced favorably over oxidation-induced stacking faults, which are dominantly produced when ground with finer abrasive particle. These defects are not related with the crystal growth process like Czochralski or directional solidification. During directional solidification process, twins and stacking faults are the two major defects observed in the bulk of the silicon crystal. On the other hand, slip dislocations produced by the thermal stress are not observed. Thus, not only in single crystalline silicon crystal but also in multi-crystalline silicon, extrinsic gettering process with programmed production of surface defects might be highly applicable to silicon wafers for purification.

• Journal of the Korean Ceramic Society
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• v.36 no.12
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• pp.1356-1363
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• 1999

Self-reinforced silicon carbide was prepared by hot pressing and the control of starting phases of raw materials and its microstructural characteristics was investigated. The specimens with self-reinforced microstructure were obtained from the compacts with mixed compositions of ${\alpha}$-and ${\beta}$-SiC powders. Self-reinforced microstructure which is composed of large dispersed grains with rod-like shape and matrix with small equiaxed grains was formed by the transformation to the ${\alpha}$-SiC with 4H polytype for ${\beta}$-SiC and anisotropic grain growth during the heat treatment. Of all speimens the values of volume fraction maximum length and aspect ratio for large grains with rode-like types were the highest at the specimen with 50 vol% ${\beta}$-SiC in the starting SiC powder and therefore this specimen showed the highest fracture toughness due to the crack deflection by rod-like grains during crack propagation.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.8 no.5
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• pp.1013-1019
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• 2007

Amorphous silicon and silicon-nitride films were deposited using plasma-enhanced chemical vapor deposition (PECVD) method at $150^{\circ}C$. As fraction of $H_2$ in source gas was increased, characteristics of low-temperature silicon-nitride films approached those of conventional high-temperature films; the refractive index approached 1.9 and the ratio of nitrogen-hydrogen bonds to silicon-hydrogen bonds increased. And also, as fraction of $H_2$ in source gas was increased, characteristics of low-temperature silicon films approached those of conventional high-temperature films; refractive index and optical band gap approached 4.2 and 1.8 eV, and $[Si-H]/([Si-H]+[Si-H_2])$ increased. Lower RF power and process-pressure made the amorphous silicon films to be better properties. Increase of $H_2$ ratio seemed as the common factor to get reliable amorphous silicon and silicon-nitride films for thin-film-transistors (TFTs) at low temperature.

• Journal of The Geomorphological Association of Korea
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• v.17 no.3
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• pp.1-16
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• 2010

Phytoliths, silica microfossil that produced within and between cells and tissues of plants are especially yielded in Gramineae with many different forms and can attribute to the reconstruction of climatic and environmental changes and agriculture activity of the Quaternary. The phytoliths in soil can remain for long periods of time, because of strong resistance to physical and chemical weathering. The spatial range of study is too small due to deposition of phytoliths directly to the soil. There are difficulties of phytoliths identification because of multiplicity and redundancy, so far uniform and exact classification scheme has not been adopted. Therefore we attempted phytolith classification system applied to Korea. The paleoenvironmental reconstruction research using phytholith are applicated in many parts of studies. Also high-resolution paleoclimatic reconstruction expected to be possible using phytolith indices of Iph and Ic as well as climatic indicator of phytolith morphology.

• Composites Research
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• v.18 no.5
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• pp.27-33
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• 2005

In this research, the mathematical modelling of the pulse-CVI (Chemical Vapor Infiltration) for the preparation of siliconcarbide/carbon composite. Each pulse consists with the gas injection time, the reaction time and the evacuation time. Effects of the reaction time and the evacuation time were studied. Additionally, the effects of the reactant concentration and the pressure were observed. The benefits of the pulse-CVI such as the uniform infiltration of siliconcarbide into the carbon preform and the short reaction time were certified.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.6
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• pp.261-266
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• 2003

The presence of ultrasonic wave in the caustic etching process enhances the etching rate and results in finer and more homogeneous textured structure of the crystalline silicon surface. The silicon solar cell textured in the caustic solution at $60^{\circ}C$ with ultrasonic wave gives higher cell performance than the cell textured at $70^{\circ}C$ without ultrasonic wave. This result indicates a strong possibility of lowering the production cost of the silicon solar cell through saving the thermal budget or expensive chemical normally employed in the texturisation of the crystalline silicon.

• Journal of the Korean Ceramic Society
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• v.39 no.7
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• pp.693-698
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• 2002

Reaction-Bonded Silicon Carbide (RBSC) Ceramics were fabricated which satisfies the maximum packing density of silicon carbide skeleton in the green compacts. Such a high packing density induced incomplete infiltration during reaction-sintering; forms linear void around the interface of large alpha silicon carbide powders. During reaction-sintering, the limited extraction and entrapped gas induced by residue oxide was considered to be a reason of linear void formation. In order to improve infiltration behavior in the highly packed preform, the pre-treatment methods for residue oxide removal were proposed.