• Proceedings of the Computational Structural Engineering Institute Conference
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• 1997.04a
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• pp.53-60
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• 1997

The strain localization of concrete is a phenomenon such that the deformation of concrete is localized in finite region along with softening behavior. The objective of this paper is to develope a consistent algorithm for the finite element modeling of localized zone in the analysis of the strain-localization in concrete. For modeling of the localized zone in concrete under strain localization, a general Drucker-Prager failure criterion which can consider nonlinear strain softening behavior of concrete after peak-stress is introduce. The return-mapping algorithm is used for the integration of the elasto-plastic rate equation and the consistent tangent modulus is derived. Using finite element program implemented with the developed algorithms, strain localization behaviors for the different sizes of concrete specimen under compression are simulated.

• Journal of the Korean Society of Marine Environment & Safety
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• v.2 no.1
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• pp.1-10
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• 1996

초음파는 액체 및 고체의 매질 속에서도 그 전달 특성이 우수하여 수중 물체의 감지, 지질 조사 자원탐사뿐만 아니라, 의학 분야에서도 널리 사용되고 있다. 물체유동정보 측정방식에는 연속파를 이용한 도플러식과 펄스 신호를 이용한 도플러는 거리 분해능이 좋으므로 깊이에 따른 속도 정보를 쉽게 얻을 수 있는 장점이 있으나, 수신되는 도플러 신호가 탐촉자의 특성과 매질 속에서의 전파특성 등에 의하여 송신된 신호와 파형이 다르고 복잡한 주파수 특성을 가지므로 연속파에서와 같이 도플러 주파수를 직접 측정하기 곤란하다. 도플러 주파수를 검출하기 위하여 여러 방법이 개발되어 있으나, 측정거리와 측정속도의 제약과 더불어, 실시간(real time) 처리에 의한 분포적 측정이 어려운 실정이다. 본 연구에서는 시간 영역에서 국소 데이터를 이용하여 펄스 신호의 위상을 정의하고 실시간에서 펄스 신호를 위상으로 변환하는 신호 처리법을 제안하였다. 또한 이 신호 처리법을 응용하여 측정 범위의 위상 곡선에서 위상 차를 계산함으로써 평균 가속도와 유동속도정보를 분포적으로 얻을 수 있는 새로운 펄스 도플러 기법을 제안하였으며, 모델 신호를 만들어 제안된 방법의 유용성을 검토하였다.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 1999.04a
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• pp.7-7
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• 1999

충돌/유출냉각은 연소실 벽면 등과 같이 열부하가 많이 걸리는 영역에서 고온의 연소가스로부터 표면을 보호하는 막냉각과 더불어 내부에 다공성 판을 설치하여 충돌제트에 의해 내부표면을 냉각시켜 가스터빈엔진의 고온요소의 냉각성능을 극대화시키는 방법 중의 하나이다. 이와 같은 냉각방법을 적용하면 벽면을 충돌제트에 의한 냉각과 함께 냉각유채를 막냉각에 활용함으로써 냉각효율을 극대화할 수 있다. 본 연구에서는 국소적인 값들을 획득하기 용이한 물질전달실험방법의 하나인 나프탈렌 승화법을 이용하여 수직으로 분사되는 충돌제트에 의한 유출판 내면에서의 열/물질전달특성을 분사판(injection plate)과 유출판(effusion plate) 사이의 높이, 분사제트의 속도, 분사홀간의 배열을 변화시켜가며 유출판만이 있는 경우와 비교, 분석하였다. 분사홀과 유출홀의 관 사이의 간격은 0.33d에서 10d까지 변화시켜가며 그 효과를 관찰하였으며, 홀배열 효과를 보기 위하여 2가지 홀배열(staggered array, shifted array)에 대하여 실험하였다. 또한 분사제트의 속도효과를 고찰하기 위하여 분사제트의 Rc$_{d}$=5,000-12,000까지 변화시켜가며 실험을 수행하였다.

• Journal of the Korean Vacuum Society
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• v.20 no.4
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• pp.307-312
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• 2011

As a technique for removing cancerous tumors from normal tissue, radio-frequency electromagnetic waves were employed to heating target cells up to the critical temperature, which kills the cancerous cells. However, its use in treating tumors in soft organs is limited by inconvenient factors, which are use of high-currents and long time operation. In this work, the feasibility of the localized heating by inserting four conducting electrodes with tiny direct current is investigated. The heat source is resulting from the electric field as known as resistive heating. We have investigated the temperature distribution as a function of applying DC voltages ranging from 10 V to 30 V with 10 V step. From the simulation results, the mushroom-like lesion shape by applying 20 V is generated by four electrodes within a few minutes, that is proper to the clinical application.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.54 no.10
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• pp.438-442
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• 2005

Si nanocrystal (Si NC) memory device has several advantages such as better retention, lower operating voltage, reduced punch-through and consequently a smaller cell area, suppressed leakage current. However, the physical and electrical reasons for this behavior are not completely understood but could be related to interface states of Si NCs. In order to find out this effect, we characterized electrical properties of Si NCs embedded in a SiO$_{2}$ layer by scanning probe microscopy (SPM). The Si NCs were generated by the laser ablation method with compressed Si powder and followed by a sharpening oxidation. In this step Si NCs are capped with a thin oxide layer with the thickness of 1$\~$2 nm for isolation and the size control. The size of 51 NCs is in the range of 10$\~$50 m and the density around 10$^{11}$/cm$^{2}$ It also affects the interface states of Si NCs, resulting in the change of electrical properties. Using a conducting tip, the charge was injected directly into each Si NC, and the image contrast change and dC/dV curve shift due to the trapped charges were monitored. The results were compared with C-V characteristics of the conventional MOS capacitor structure.

• Journal of Dental Rehabilitation and Applied Science
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• v.32 no.4
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• pp.322-329
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• 2016

Reconstruction of the maxillectomy with an obturator is to restore masticatory, swallowing, phonetic and esthetic problems. Stress created by lateral forces is minimized by the proper selection of an occlusal scheme, elimination of premature occlusal contacts, and wide distribution of supporting area. It should be considered that properly designed retainers reduce the stresses transmitted to the abutment while the obturator is in function. The following clinical report presents palatal obturator treatment with implant assisted removable partial denture (IARPD) design that restores normal function and esthetics in patients who experienced maxillectomy and dental implant failure.

• Korean Journal of Optics and Photonics
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• v.34 no.6
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• pp.283-288
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• 2023

We investigate the optical and electrical properties of silver nanofilms deposited on transparent substrates such as quartz, sapphire, and slide glass treated with (3-mercaptopropyl) trimethoxysilane (MPTMS). The effect of MPTMS treatment on physical properties is studied through scanning electron microscope (SEM) images, UV-visible transmission, and current-voltage measurements. The SEM images show morphology change of the silver nanofilm, and the UV-visible transmission spectra reveal that the localized surface-plasmon resonance effect is reduced due to the morphology change. These results imply that the uniformity of silver nanofilm is improved by MPTMS treatment for various transparent substrates, resulting in a 100-fold decrease in the electrical resistance of the silver nanofilm.

• Radiation Oncology Journal
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• v.21 no.4
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• pp.253-260
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• 2003

Purpose: No general consensus has been reached regarding the necessity of postoperative radiation therapy (PORT) and the optimal techniques of its application for patients with chest wall invasion (pT3cw) and node negative (NO) non-small cell lung cancer (NSCLC). We retrospectively analyzed the PT3cwN0 NSCLC patients who received PORT because of presumed inadequate resection margin on surgical findings. Materials and Methods: From Aug. 1994 till June 2000, 21 pT3cwN0 NSCLC patients received PORT at Samsung Medical Center; all of whom underwent curative on-bloc resection of the primary tumor plus the chest wall and regional lymph node dissection. PORT was typically stalled 3 to 4 weeks after operation using 6 or 10 MV X-rays from a linear accelerator. The radiation target volume was confined to the tumor bed plus the immediate adjacent tissue, and no regional lymphatics were included. The planned radiation dose was 54 Gy by conventional fractionation schedule. The survival rates were calculated and the failure patterns analyzed. Results: Overall survival, disease-free survival, loco-regional recurrence-free survival, and distant metastases-free survival rates at 5 years were 38.8$\%$, 45.5$\%$, 90.2$\%$, and 48.1$\%$, respectively. Eleven patients experienced treatment failure: six with distant metastases, three with intra-thoracic failures, and two with combined distant and intra-thoracic failures. Among the five patients with intra-thoracic failures, two had pleural seeding, two had in-field local failures, and only one had regional lymphatic failure in the mediastinum. No patients suffered from acute and late radiation side effects of RTOG grade 3 or higher. Conclusion: The strategy of adding PORT to surgery to improve the probability, not only of local control but also of survival, was justified, considering that local control was the most important component in the successful treatment of pT3cw NSCLC patients, especially when the resection margin was not adequate. The incidence and the severity of the acute and late side effects of PORT were markedly reduced, which contributed to improving the patients' qualify of life both during and after PORT, without increasing the risk of regional failures by eliminating the regional lymphatics from the radiation target volume.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.34 no.9
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• pp.859-866
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• 2010

Nonlinear dynamics of pulsating instability-diffusional-thermal instability with Lewis numbers sufficiently higher than unity-in counterflow diffusion flames, is numerically investigated by imposing a Damkohler number perturbation. The flame evolution exhibits three types of nonlinear behaviors, namely, decaying pulsating behavior, diverging behavior (which leads to extinction), and stable limit-cycle behavior. The stable limit-cycle behavior is observed in counterflow diffusion flames, but not in diffusion flames with a stagnant mixing layer. The critical value of the perturbed Damkohler number, which indicates the region where the three different flame behaviors can be observed, is obtained. A stable simple limit cycle, in which two supercritical Hopf bifurcations exist, is found in a narrow range of Damkohler numbers. As the flame temperature is increased, the stable simple limit cycle disappears and an unstable limit cycle corresponding to subcritical Hopf bifurcation appears. The period-doubling bifurcation is found to occur in a certain range of Damkohler numbers and temperatures, which leads to extend the lower boundary of supercritical Hopf bifurcation.

• Journal of the Korean Vacuum Society
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• v.15 no.2
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• pp.162-167
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• 2006

The symmetry of the conduction-band minimum of $GaAs_{1-x}N_{x}$ is probed by performing resonant Raman scattering (RRS) on thin layers of $GaAs_{1-x}N_{x}(x{\leq}0.7)$ epitaxially grown on Ge substrates. Strong resonance enhancement of the LO(longitudinal optical)-phonon Raman intensity is observed with excitation energies near the $E_0$ as well as $E_+$ transitions, However, in contrast to the distinct LO-phonon line-width resonance enhancement and activation of various X and L zone-boundary phonons brought about slightly below and near the $E_+$ transition, respectively, we have not observed any resonant LO-phonon line-width broadening or activation of sharp zone-boundary phonons near the $E_0$ transition. The observed RRS results reveal that the conduction-band minimum of GaAsN predominantly consists of the delocalized GaAs bulk-like states of ${\Gamma}$ symmetry.