• Journal of Navigation and Port Research
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• v.27 no.5
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• pp.505-511
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• 2003

In this paper, a driving amplifier stage with 1 Watt output has been designed and fabricated, which is operating at UHF band( 470 ∼ 806 MHz) for digital TV repeater. In the driving amplifier stage, preamplifier and 1 Watt unit amplifier are integrated by one electric substrate which is 2.53 in dielectric constant and 0.8 mm thickness. When the driving amplifier stage is flown by bias voltage of 28 V DC and current of 900 mA. it has the gain of more than 53.5 dB. the gain flatness of $\pm$0.5 dB and return loss of less than -15 dB in 470 ∼ 806 MHz. Also, when two signals at 2 MHz frequency interval are input port into the driving amplifier stage with 1 Watt output, it resulted in excellent characteristics to designed specification with showing intermodulation distortion characteristics of more than 48 dBc.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.32 no.10A
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• pp.1072-1077
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• 2007

In this paper, a power amplifier intermodulation distortion has been analyzed to improve linearity and the analysis results are used to minimize the distortion for linear power amplifier design. The proposed design technique is which the intermodulation distortions of the final amplifier are removed by driver intermodulation distortions. This proposed technique is based on AM to AM distortion analysis using power series, and AM to PM distortion analysis results using Bessel function. To verify this technique implement a cellular HPA(High Power Amplifier) 30W. From the results of the implementation and measurement for the linear power amplifier, the spurious characteristic is shown as 50 dBc at 1.98 MHz with 30 W with 20FA. These results show that distortion characteristics are improved as much as 10 dB in spurious characteristic compared with conventional design method.

• Journal of the Korean Institute of Telematics and Electronics
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• v.5 no.1
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• pp.13-25
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• 1968

A detailed analysis of the transistor wide-band feedback amplifiers using the hybrid-$\pi$ equivalent circuit has been made. It is considered both for the low freqnency and for the high frequency. The expressions of the gain, bandwidth. input impedance and output impedance have been presented. It is shown that a series feedback amplifier should be driven from the voltage source and should drive into the low resistance load, and a shunt feedback amplifier should be driven from the current source and should drive into the high resistance load. It is also shown that these stages can be coupled without use of the buffer stage or coupling transformer.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.17 no.11 s.114
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• pp.1030-1039
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• 2006

A high power and high gain Doherty amplifier is designed by using embedded driver amplifiers in the final stage. The operational characteristics of a two-stage Doherty amplifier are analyzed, as a function of the two-stage peaking amplifier gate biases. The driver stages and final output stages are implemented using two single-ended MRF21045s and a single push-pull packaged MRF5P21180, respectively. This two-stage Doherty amplifier demonstrated 27 dB gain with a PAE of 23 % at 15 W average output power.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.12
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• pp.41-46
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• 2008

We report a high gain D-band(110 - 140 GHz) MMIC drive amplifier based on $0.1{\mu}m$ InGaAs/InAlAs/GaAs metamorphic HEMT technology. The amplifier shows an excellent $S_{21}$ gain characteristic greater than 10 dB in a millimeterwave frequency of 110 GHz, Also the amplifier has good reflection characteristics of a $S_{11}$ of -3.5 dB and a $S_{22}$ of -6.5 dB at 110 GHz, respectively The high performances of the MMIC drive amplifier is mainly attributed to the characteristics of the MHEMTs exhibiting a maximum transconductance of 760 mS/mm, a current gain cut-off frequency of 195 GHz and a maximum oscillation frequency of 391 GHz.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.23 no.6
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• pp.719-725
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• 2019

We propose a 2.4-GHz CMOS power amplifier (PA) with a bypass structure to improve the power-added efficiency (PAE) in the low-power region. The primary winding of the output transformer is split into two parts. One of the primary windings is connected to the output of the power stage for high-power mode. The other primary winding is connected to the output of the driver stage for low-power mode. Operation of the high power mode is similar to conventional PAs. On the other hand, the output power of the driver stage becomes the output power of the overall PA in the low power mode. Owing to a turning-off of the power stage, the power consumption is decreased in low-power mode. We designed the CMOS PA using a 180-nm RFCMOS process. The measured maximum output power is 27.78 dBm with a PAE of 20.5%. At a measured output power of 16 dBm, the PAE is improved from 2.5% to 12.7%.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.42 no.2 s.332
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• pp.87-92
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• 2005

In this paper, adaptive bias circuit and PBG structure have been employed to suppress IMD and improve PAE (Power Added Efficiency) of the power amplifier. It is controlling the gate 'dc' bias voltage with the envelope of the input RF signal. and The PBG structure has been employed on the output port of power amplifier . The proposed power amplifier using adaptive bias circuit and PBG has been improved the IMG by 3 dBc, and the average PAE by $35.54\%$, respectively.

• Proceedings of the IEEK Conference
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• 2004.06b
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• pp.339-342
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• 2004

본 논문은 밀리미터파 대역 무선통신 시스템 송신부의 응용을 위해 CPW 구조를 이용하여 V-band용 상향 주파수 혼합기와 2단 구동증폭기를 설계$\cdot$제작하였다. 능동소자는 본 연구실에서 제작한 $0.1{\mu}m$ 게이트 GaAs Pseudomorphic HEMTs(PHEMTs)를 사용하였으며 입$\cdot$출력단은 CPW를 사용해 정합 회로를 설계하였다. 제작된 상향 주파수 혼합기는 LO power 5.4 dBm, 2.4 GHz IF 신호를 -10.25 dBm으로 입력하였을 때 Conversion Loss 1.25 dB, LO-to-RF Isolation은 58 GHz에서 13.2 dB의 특성을 나타내었다 2단 구동 증폭기는 측정결과 60 GHz에서 S21 이득 13 dB, $58\;GHz\;\~\;64\;GHz$ 대역에서 S21 이득 12 dB 이상을 유지하는 광대역 특성을 얻었고 증폭기의 Pl dB는 3.8 dBm, 최대 출력전력은 6.5 dBm의 특성을 얻었다.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.3 no.2
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• pp.281-290
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• 1999

This paper presents the development of a high power amplifier for a transmitter of INMARSAT-C operating at L-band(1626.5∼1646.5 MHz). To simplify the fabrication process, the whole system is designed of two parts composed of a driving amplifier and a high power amplifier The HP's AT-41486 is used for driving part and the SGS-THOMSON microelectronics' STM1645 is used the high power amplifier. The SSPA(Solid State Power Amplifier) was fabricated by the both circuits of RF and temperature compensation in aluminum housing. The realized SSPA has more than 36 dB for small signal within 20MHz bandwidth, and the voltage standing wave ratios(VSWR) of input and output Port are less than 1.5:1, respectively. The output Power of 42.2 dBm is achieved at the 1636.5 MHz. These results reveal a high power amplifier of 20 Watt which is the design target.

• Proceedings of the KAIS Fall Conference
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• 2007.11a
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• pp.71-73
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• 2007

본 논문은 질화갈륨 전력 소자를 이용한 이동통신 중계기 및 기지국용 전력증폭기 모듈의 설계에 대하여 기술하고 있다. 전력 버짓 분석을 통하여 전치증폭기와 구동증폭기, 그리고 최종단 고출력증폭기의 전력 용량을 계산하였고, 여기에 적합한 질화갈륨 소자를 선택하였다. 최종 개발에 앞선 초기버젼의 전력증폭기를 구성하여 1-tone과 2-tone에 대하여 전력특성을 측정해 보았다.