• 인포메이션 디스플레이
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• 제23권4호
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• pp.29-34
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• 2022

• 한국태양광발전학회지
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• 제5권1호
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• pp.7-15
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• 2019

최근 유기물과 무기물의 복합된 구조를 가지는 페로브스카이트 소재를 광흡수층으로 사용한 태양전지가 연구적으로 큰 관심을 받고 있다. 이러한 유무기 하이브리드형 페로브스카이트 소재는 기존의 광흡수 소재들에서는 발견되지 않던 독특한 광전기적인 특성과 이에 기인하는 고 광전변환효율 그리고 저렴한 박막제조 공정 등으로 인해 기존 차세대 태양전지의 한계에 돌파구를 제시하고 있다. 본 글에서는 이러한 고효율, 고안정성 페로브스카이트 태양전지 구현을 위해 사용되는 전하수송소재의 종류와 개발동향에 대해서 살펴보고자 한다.

• 한국전기전자재료학회논문지
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• 제32권6호
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• pp.477-482
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• 2019

This study investigated the influence of the viscoelastic property of slag when producing glass fiber, MFS631 with 60% of manganese slag, 30% of steel slag, and 10% of silica stone. To fabricate the MFS631 glass bulk, slag materials were placed in an alumina crucible, melted at $1,550^{\circ}C$ for 2 h, and then annealed at $600^{\circ}C$ for 2 h. It was found that glass is non-crystalline through X-ray diffraction analysis. MFS631 fiber was produced at speed in the range of 100~300 rpm at $1,150^{\circ}C$. The loss modulus (G") and storage modulus (G') of the produced glass fiber were evaluated at high temperatures. G' and G" of MFS631 were greater than $893^{\circ}C$, and the modulus value was 136,860 pa. This is similar to the results of a general E-glass fiber graph. Therefore, it was concluded that its spinnability is similar to that of E-glass fiber; therefore, it can be commercialized.

• 한국재료학회지
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• 제28권12호
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• pp.714-718
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• 2018

Anti-reflection thin films are fabricated on glass substrates using the screen printing method. Tetra ethyl silicate(TEOS) and methyl tri methoxy silane(MTMS) are used as starting materials and buthyl carbitol acetate(BCA) and buthyl cellusolve(BC) are mixed to improve the viscosity of the solution. Anti-reflection thin films are fabricated according to the number of the screen mesh and the characteristics improve as the mesh size increases. The transmittance and reflectance of the coated thin film using 325 mesh are about 94 % and 0.43 % in the visible wavelength. The thickness and refractive index of the AR thin film are 107 nm and n = 1.26, respectively.

• 한국태양광발전학회지
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• 제9권2호
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• pp.6-17
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• 2023

• E2M - 전기 전자와 첨단 소재
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• 제17권5호
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• pp.3-12
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• 2004

지난 십년동안 정보산업의 지속적인 고속성장과 맞물려 단파장 광소자와 고출력, 고주파 전자소자의 성능에 대한 사양이 날로 높아 감에 따라 그 어느 때보다 소자 제조 공정에서 고품위 박막 성장이 중요한 위치를 차지하게 되었다. 자연스럽게 연구자들은 이러한 소자에 대한 높은 요구를 충족시키기 위해 기존 발광소재(GaN, 6H-SiC)를 근간으로 소자의 성능을 개선하려는 노력 뿐 아니라 기존 물질의 한계를 극복할 수 있는 새로운 발광소재에 대해 관심을 갖게 되었다.(중략)

• 한국전기전자재료학회논문지
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• 제32권2호
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• pp.174-177
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• 2019

The traditional yttria-stabilized zirconia (YSZ) used in thermal barrier coatings has a limited operating temperature owing to densification and volume changes at high temperatures. A $(La_{1-x}Y_x)_2Zr_2O_7$ sintered compound was prepared by the co-precipitation and oxalate methods, by adding lanthanum zirconate to yttria. The thermal properties and crystallinity obtained by the two different methods were compared. Both methods yielded pyrochlore structures, and the oxalate method confirmed phases at low temperatures. The thermal conductivity of the sintered bulk prepared by co-precipitation was 0.93 W/mK, while that prepared by the oxalate method was 0.85 W/mK. These values are superior to that of 4YSZ at $1,000^{\circ}C$, which is widely used in industries.

• 광산업정보
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• 통권20호
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• pp.62-69
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• 2004

• 광산업정보
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• 통권28호
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• pp.52-61
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• 2005

• 한국전기전자재료학회논문지
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• 제32권5호
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• pp.426-431
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• 2019

In this study, we report the effect of pre-treatment of alpha-$Ga_2O_3$ grown on a sapphire substrate by halide vapor phase epitaxy (HVPE). During the pre-treatment process, 10 sccm of GaCl gas was injected to the sapphire substrate at $470^{\circ}C$. The surface morphologies of the alpha-$Ga_2O_3$ layers grown with various pre-treatment time (3, 5, and 10 min) were flat and crack-free. The transmittance of the alpha-$Ga_2O_3$ epi-layers was measured to analyze their optical properties. The transmittance was over 80% within the range of visible light. The strain in the alpha-$Ga_2O_3$ grown with a pre-treat 5 min was measured, and was found to be close to the theoretical XRD peak position. This can be explained by the reduction of strain having caused a lattice mismatch between the alpha-$Ga_2O_3$ layer and sapphire substrate. The calculated dislocation density of the screw and edge were $2.5{\times}10^5cm^{-2}$ and $8.8{\times}10^9cm^{-2}$, respectively.