• Journal of Bio-Environment Control
• /
• v.31 no.3
• /
• pp.204-211
• /
• 2022

To produce a high quality crop, light is an essential environmental factor in greenhouse cultivation. In the winter season, solar radiation is weak than other season. Therefore, using supplemental light during a low radiation period can increase the crop growth and yield. This study was conducted to select the economical supplemental light source for greenhouse cultivation in pepper during the low radiation period. The green pepper (Capsicum annuum 'Super Cheongyang') was transplanted on 5 September 2019. Supplemental lighting treatment was conducted from 1 January 2020 to 31 March 2020. RB LED (red and blue LED, red:blue = 7:3), W LED (white LED, R:G:B = 5:3:2), and HPS (high-pressure sodium lamp) were used as the supplemental light source. Non-treatment was used as the control. The plant height, SPAD, and number of nodes of pepper plants have no significant differences by supplemental light sources. However, the number of ramifications plants was the greatest in RB LED light source. Moreover, supplemental lighting increased photosynthesis of the pepper plant, and especially, the RB LED had the highest photosynthesis rate during supplemental lighting period. Also, the yield of pepper increased in the supplemental lighting treatment than in the control, and the RB LED had the greatest yield than other light sources. The electricity consumption was the highest in W LED and the lowest in HPS light. Through the economic analysis, the RB LED had high economic efficiency. In conclusion, these results suggest that using RB LED for supplemental light source during low radiation in pepper greenhouse increase the yield and economic feasibility.

• Korean Journal of Optics and Photonics
• /
• v.12 no.3
• /
• pp.230-234
• /
• 2001

We report a simple method for determining photovoltaic constant and conductivities of any photorefractive crytals which have no inversion symmetry by utilizing the electric field dependence of non-phase-matched second harmonic generation. New theoretical expression for the electric field dependence of Maker fringes is derived and space charge field can be determined using this from the observed change of intensity of second harmonic wave. The photovoltaic constant, dark conductivity and photoconductivity are easily deduced from an analysis of the measured relaxation behavior of space-charge field at two different light intensities. We demonstrate this method for $LiNbO_3$ at 514.5 nm.4.5 nm.

• Journal of the Korean Institute of Telematics and Electronics S
• /
• v.35S no.8
• /
• pp.120-129
• /
• 1998

In this paper represented uninterruptible power sypply(UPS) equipment maintaining constant output voltage, using a pulse width modulation(PWM) voltage fed inverter, as power source disconnection, voltage variation and output current variation with load variation. This system is driven by being synchronized voltage fed inverter and AC source, and in the steady state of power source charge battery connected to DC side with solar cell using a Photovoltaic (PV) that it was so called constant voltage charge. In addition, better output waveform was generated because of PWM(pulse width Modulation) method, and it was Proved to test by experiment maintained constant output voltage regardless of AC source disconnection, load variation, and voltage variation of AC power source.

• Journal of the Semiconductor & Display Technology
• /
• v.15 no.2
• /
• pp.6-10
• /
• 2016

In RF plasma processing, when the plasma is generated, there is the difference of impedance between RF generator and plasma source. Its difference is normally reduced by using the matcher and the RF power is transferred efficiently from the power generator to the plasma source. The generated plasma has source impedance that it can be changed during processing by pressure, frequency, density and so on. If the range of source impedance excesses the matching range of the matcher, it cannot match all value of the impedance. In this research, we studied the elevation mechanism of the RF power delivery efficiency between RF generator to the plasma source by using the transmission line and impedance tuning of the plasma source. We focus on two plasma sources (capacitive coupled plasma (CCP), inductive coupled plasma (ICP)) which is most widely used in industry recently.

• Korean Journal of Optics and Photonics
• /
• v.35 no.4
• /
• pp.150-156
• /
• 2024

One of the key factors in research regarding long-distance laser beam propagation, as in free-space optical communication or laser power transmission, is the transmission efficiency of the laser beam. As a way to improve efficiency, we perform extensive numerical simulations of the effect of modifying the laser beam's profile, especially replacing the fundamental Gaussian beam with a super-Gaussian beam. Numerical simulations of the transmitted power in the ideal diffraction-limited beam diameter determined by the optical system of the transmitter, after about 1-km propagation, reveal that the second-order super-Gaussian beam can yield superior performance to that of the fundamental Gaussian beam, in both single-channel and coherently combined multi-channel laser transmitters. The improvement of the transmission efficiency for a 1-km propagation distance when using a second-order super-Gaussian beam, in comparison with a fundamental Gaussian beam, is estimated at over 1.2% in the singlechannel laser transmitter, and over 4.2% and over 4.6% in coherently combined 3- and 7-channel laser transmitters, respectively. For a range of the propagation distance varying from 750 to 1,250 m, the improvement in transmission efficiency by use of the second-order super-Gaussian beam is estimated at over 1.2% in the single-channel laser transmitter, and over 4.1% and over 4.0% in the coherently combined 3- and 7-channel laser transmitters, respectively. These simulation results will pave the way for future advances in the generation of higher-order super-Gaussian beams and the development of long-distance optical energy-transfer technology.

• Journal of Sensor Science and Technology
• /
• v.7 no.1
• /
• pp.67-72
• /
• 1998

The crystallized CuPc and PbTe films are formed by thermal evaporation and pulsed ArF excimer laser ablation. Structural and electrical properties of thin film is observed by XRD and current-voltage(I-V) curves. From XRD analysis, both PbTe and CuPc thin films show a-axis oriented structure. For the measurement of photovoltaic effect, the transverse current-voltage curve of CuPc/Si, PbTe/Si and PbTe/CuPc/Si junctions have been analyzed in the dark and under illumination. The PbTe/CuPc/Si junction exthibits a strong photovoltaic characteristics with short circuit current($J_{sc}$) of $25.46\;mA/cm^{2}$ and open-circuit voltage($V_{oc}$) of 170 mV. Quantum efficiency and power conversion efficiency are calculated to be 15.4% and $3.46{\times}10^{-2}$, respectively. Based on the results of QE and ${\eta}$, the photocurrent process of PbTe/CuPc/Si junction can be explained as following three effective steps; photocarrier generation in the CuPc layer, carrier separation at PbTe/CuPc interface, and finally a transportation of electrons through the PbTe layer.

• Journal of Sensor Science and Technology
• /
• v.8 no.3
• /
• pp.239-246
• /
• 1999

A highly sensitive photovoltaic infrared photodiode was fabricated for detecting infrared light in $3{\sim}5\;{\mu}m$ wavelength range on InSb wafer with p-i-n structure grown by MOCVD. Silicon dioxide($SiO_2$) insulating films for the junction interface and surface of photodiode were prepared using RPCVD because InSb has low melting point and evaporation temperature. After formation of In ohmic contacts by thermal evaporation, the electrical properties of the photodiode were characterized in dark state at 77K. A product of zero-bias resistance and area($R_0A$) showed $1.56{\times}10^6\;{\Omega}{\cdot}cm^2$ that satisfied BLIP(background limited infrared photodetector) condition. When the photodiode was tested under infrared light, the normalized detectivity of about $10^{11}\;cm{\cdot}Hz^{1/2}{\cdot}W^{-1}$ was obtained. we successfully fabricated a unit cell with InSb IR array with good quantum efficiency and high detectivity.

• New Physics: Sae Mulli
• /
• v.68 no.11
• /
• pp.1208-1214
• /
• 2018

The one-step spin coating method is reported as an excellent thin film process because it can be easily used to fabricate high-quality methyl-ammonium lead tri-iodide ($MAPbI_3$) perovskite layers. One of the important things in the one-step spin coating method towards obtaining high-quality $MAPbI_3$ layers is the anti-solvent (AS) engineering, which consists of an one-step deposition of the $MAPbI_3$ film and dripping of the AS. The properties of the $MAPbI_3$ layer were found to be strongly influenced by the amount, dispensing speed, and spraying time of the AS solution. The $MAPbI_3$ solution was prepared by dissolving lead iodide and methyl-ammonium iodide in N,N-dimethylformamide and adding N,N-dimethyl sulfoxide. Diethyl ether (DE) was used for the AS solution. The results indicate that a $MAPbI_3$ layer appropriately sprayed with DE is beneficial for improving film quality and device efficiency because nucleation of $MAPbI_3$ layer is affected by the characteristics of DE, which affect the film's crystallinity, density, and surface morphology. The $MAPbI_3$ layer, which was optimized by using 0.7 mL of DE, a 3.03 mL/sec dispensing speed, and a 7 second time to spray after spinning showed the best efficiency of 13.74%, which was reproducible.

• Journal of the Institute of Electronics and Information Engineers
• /
• v.53 no.10
• /
• pp.103-108
• /
• 2016

With the growing trend of pervasive computing, (the idea that technology is moving beyond personal computers to everyday devices) there is a growing demand for lightweight ciphers to safeguard data in a network that is always available. For all block cipher applications, the AES is the preferred choice. However, devices used in pervasive computing have extremely constraint environment and as such the AES will not be suitable. In this paper we design and implement a new lightweight compact block cipher that takes advantage of both S-P network and the Feistel structure. The cipher uses the S-box of PRESENT algorithm and a key dependent one stage omega permutation network is used as the cipher's P-box. The cipher is implemented on iNEXT-V6 board equipped with virtex-6 FPGA. The design synthesized to 196 slices at 337 MHz maximum clock frequency.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.238-239
• /
• 2011

최근 반도체 산업은 더 높은 성능의 회로 제작을 통해 초고집적화를 추구하고 있다. 이를 위해서 회로 설계의 최소 선폭과 소자 크기는 지속적으로 감소하고 있고 이를 위한 배선 기술들은 플라즈마 공정을 이용한 식각공정에 크게 의존하고 있다. 식각공정에 있어서 반응가스의 조성은 식각 속도와 선택도를 결정하는 중요한 요소이다. 본 연구에서는 CIS QMS (closed ion source quadrupole mass spectrometer)를 이용하여 CF4+Ar를 이용한 실리콘 산화막의 플라즈마 식각 공정 시 생성되는 라디칼과 이온 종들을 측정하였다. Ar 이온이 기판표면과 충돌하여 기판물질간의 결합을 깨놓으면, 반응성 기체 및 라디칼과의 반응성이 커져서 식각 속도를 향상 시키게 된다. 본 실험에서는 2 MHz의 RPS (remote plasma source)를 이용하여 플라즈마를 발생시키고 13.56 MHz의 rf 전력을 기판에 인가하여 식각할 웨이퍼에 바이어스 전압을 유도하였다. CF4/(CF4+Ar)의 가스 혼합비가 커질수록 식각 부산물인 SiF3의 양은 증가 하였으며, CF4 혼합비가 0일 때(Ar 100%) 비하여 1일 때(CF4 100%) SiF3의 QMS 이온 전류는 106배 증가하였다. 이때의 Si와 결합하여 SiF3를 형성하는 F라디칼의 소모는 0.5배로 감소하였다. 또한 RPS power가 800 W일 때 플라즈마에 의해서 CF4는 CF3, CF2, CF로 해리 되며 SiO2 식각 시 라디칼의 직접적인 식각과 Si_F2의 흡착에 관여되는 F라디칼의 양은 CF3 대비 7%로 검출되었고, 식각 부산물인 SiF3는 13%로 측정되었다. Ar의 혼합비를 0 %에서 100%까지 증가시켜 가면서 측정한 결과 F/CF3는 $1.0{\times}105$에서 $2.8{\times}102$로 변화하였다. SiF3/CF3는 1.8에서 6.3으로 증가하여 Ar을 25% 이상 혼합하는 것은 이온 충돌 효과에 의한 식각 속도의 증진 기대와는 반대로 작용하는 것으로 판단된다.