• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.7
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• pp.683-693
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• 2011

In this paper, a design of high current and broad-band microwave bias-tee was presented for a stable bias of a high power amplifier. An input impedance of bias-tee should be shown to 50 ohm with the wideband in order to be stably-biased the amplifier. For this design of the bias-tee, a capacitor of bias-tee for a DC block was designed with a high wide-band admittance by a parallel sum of capacitors, and a inductor for a RF choke and a DC feeding was designed with a high wide-band impedance by a series sum of inductors. As this inductor and capacitor for the sum has each SRF, band-limitation of lumped element was driven from SRF. This limitation was overcome by control of a resonance's quality factor with adding a resistor. 1608 SMD chips for design's element was mounted on the this pattern for the designed bias-tee. The fabricated bias-tee presented 10 dB of return loss and wide-band about 50 ohm input impedance at 10 MHz~10 GHz.

• Journal of the Korea Institute of Military Science and Technology
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• v.26 no.3
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• pp.227-233
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• 2023

In this paper, to substitute the existing TWTA(Travailing Wave Tube Amplifier) component in small radar system, we developed the Ku band SSPA(Solid-State Power Amplifier) based on the fabrication of power MMIC (Monolithic Microwave Integrated Circuit) chips. For the development of the 500 W SSPA, the 40 W-grade power MMIC was designed by ADS(Advanced Design System) at Keysight company with UMS GH015 library, and was processed by UMS foundry service. And 70 W main power modules were achieved the 2-way T-junction combiner method by using the 40 W-grade power MMICs. Finally, the 500 W SSPA was fabricated by the wave guide type power divider between the drive power amplifier and power modules, and power combiner with same type between power modules and output port. The electrical properties of this SSPA had 504 W output power, -58.11 dBc spurious, 1.74 °/us phase variation, and -143 dBm/Hz noise level.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.9 no.2
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• pp.333-338
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• 2008

In this paper, a new NMOS current-mirror type bridge rectifier for driving RFID chips, whose minimum input voltage required to obtain the effective DC output voltage is low enough and whose power dissipation can be reduced than that of conventional one, is proposed. The designed rectifier is able to supply high enough and well-rectified DC voltages to drive RFID transponder chips for the frequency range of 13.56 MHz HF(for ISO 18000-3), 915 MHz UHF(fur ISO 18000-6), and 2.45 GHz microwave(for ISO 18000-4). Output characteristics of the proposed rectifier are analyzed with the high frequency equivalent circuit. And the circuitry method for effective reducing of the gate leakage current due to the increasing of operating frequency is also proposed theoretically. Using this method, the power consumption of $100\;{\mu}W$ and the DC output voltage of 2.13V for 3V peak-to-peak input voltage and $45\;K{\Omega}$ load resistance are obtained. Compared to conventional one, the proposed rectifier operates in more stable and shows superior characteristics in UHF and microwave frequencies.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.19 no.12
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• pp.2489-2497
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• 1994

This paper presents the development of a 10 W solid-state hybrid power amplifier(SSPA). operating over $7.7\sim8.5GHz$. The fabrication and measurement of this amplifier are performed with 3 sections, such as the front one for high gain, the middle one for driving, and high power one, to minimize the risk of failure and to increase the easiness of development. and then the final amplifier is realized by connecting 3 sections above mentioned, DC bias circuit, and temperature compensation circuit on one housing. Total small signal gain obtained is about $45\pm1dB$, the input and output return losses are 25 and 27 dB respectively. The output power measured at 1 dB gain compression point for 3 frequencies at 7.7, 8.1, and 8.5 GHz are $39.8\sim40.4dBm$, which is about 10 W. and the 3rd-order harmonic powers of 2 tones test are 13.34 dBc at output power 37.5 dBm. These obtained results satisfies the initially required specification. and the realized SSPA can be installed as a subsystem of the microwave transponder for telecommunication.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.8
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• pp.591-597
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• 1999

The propagation characteristics of high power microwave pulse in an air-breakdown environment are examined. The maximum electron density produced by microwave air-breakdown is limited to $10^6cm^{-3}$ by the tail-erosion effect. Inorder to increase the electron density, the scheme using two pulses intersecting at a desired height is considered. Increasing the carrier frequency, it is shown that microwave pulse can be transferred without the serious erosion in the numerical simulation. This result is useful for the above scheme. Also, an experiment is conducted to show the tail-erosion effect and confirm that a rapidly generated lossy plasma can cause spectral breaking and frequency shift of a high-power microwave pulse. The experimental results are presented by comparing the frequency spectrum of an incident pulse with that of the pulse transmitted through a self-induced air-breakdown environment. The experimental results show that the amount of frequency upshift is co-related with the ionization rate, whereas that of frequency downshift is correlated with the energy losses from the pulse in the self-generated plasma.

• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1275-1277
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• 1995

We designed and constructed an extremly high power s-band traveling wave resonator for the test of high power microwave components using 80MW pulsed klystron with $4{\mu}s$ pulse width. The 10dB directional coupler for the input power coupling was used, and the ring consists of phase shifter, tuner, H-band, and other microwave components. The designed total electrical length of the system is 10 times of the waveguide wavelength, ${\lambda}_g$=15.3cm, and the measured total insertion loss is 0.15dB. The low power test measurment showed the power multiplication of 14.69. The design goal is to achieve the peak power of 300MW, pulse width $4{\mu}s$ with 30 pulse repetition rate. In this article we discuss the treveling wave resonant ring constructed at the PAL laboratory together with the test results.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.11
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• pp.695-700
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• 2018

This paper presents the development of compact and lightweight broadband power amplifier module using HMIC (Hybrid Microwave Integrated Circuit) technology that could be high-density integration for many non-packaged microwave components into the small area of a high dielectric constant printed circuit board, such as a ceramic substrate, also using the special design and fabrication schemes for the structure of minimized electromagnetic interference to obtain the homogeneous electrical performance at the wideband frequency. The results confirmed that the small signal gain has a gain flatness of ${\pm}1.5dB$ within the range of 32 to 36 dB. In addition, the output power satisfied more than 30 dBm. The noise figure was measured within 7 dB, and OIP3 (Output Third Order Intercept Point) was more than 39 dBm. The fabricated broadband power amplifier satisfied the target specification required to electrically drive the high power amplifiers of jamming generators for electronic warfare, so the actual applicability to the system was verified. Future studies will be aimed at designing other similar microwave power amplifiers in the future.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.151-151
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• 2008

갈륨-질화물(GaN) 기반의 고속전자이동도 트랜지스터(high electron mobility transistor, HEMT)는 마이크로파 또는 밀리미터파 등과 같은 고주파 대역의 통신시스템에 널리 사용되는 전자소자로 각광받고 있다. GaN HEMT는 AlGaN/GaN 또는 AlGaN/InGaN/GaN 등과 같은 이종접합구조(heterostructure)로부터 발생하는 이차원 전자가스(two-dimensional electron gas, 2DEG) 채널을 이용하여 캐리어 구속효과(carrier confinement) 및 이동도의 향상이 가능하다. 또한 높은 2DEG 채널의 면밀도(sheet concentration) 와 전자의 포화 속도(saturation velocity)를 바탕으로 고출력 동작이 가능하여 차세대 이동통신용 전력 증폭기로 주목받고 있다. 그러나 이론적으로 우수한 특성과 달리, 실제 소자에서는 epi 성장시의 결함이나 전위, 표면 상태에 따른 2DEG 감소 등의 영향으로 이론보다 높은 누설 전류와 낮은 항복 전압 특성을 가진다. 특히, 기존의 GaN HEMT 구조에서는 Drain-Side Gate Edge에서의 전계 집중이 항복 전압 특성에 미치는 영향이 크다. 본 논문에서는 이러한 문제를 해결하기 위해 Trapezoidal Gate구조를 이용하여 Drain 방향의 Gate Edge가 완만히 변하는 구조를 제안하였다. 이를 위해 $ATLAS^{TM}$ 전산모사 프로그램을 이용하여 Trapezoidal Gate 구조를 구현하여 형태에 따른 전류-전압 특성 및 소자의 스위칭 특성 및 Gate 아래 채널층에 형성되는 Electric Field의 분산을 조사하고, 이를 바탕으로 고속 동작 및 높은 항복 전압을 갖는 AlGaN/GaN HEMT의 최적화된 구조를 제안하였다. 새로운 구조의 Gate를 적용한 AlGaN/GaN HEMT는 Gate edge에서의 전계를 분산시켜 피크 값이 감소되는 것을 확인하였다.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.13 no.4
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• pp.1789-1796
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• 2012

In this paper, a new high-efficiency CMOS bridge rectifier for driving RFID tag chips is designed and analyzed. The input stage of the proposed rectifier is designed as a cascade structure connected with two NMOSs for reducing the gate capacitance by circuitry method, which is the main path of the leakage current that is increased when the operating frequency is increased. This gate capacitance reduction technique using the cascade input stage for reducing the gate leakage current is presented theoretically. The output characteristics of the proposed rectifier are derived analytically using its high frequency small-signal equivalent circuit. For the general load resistance of $50K{\Omega}$, the proposed rectifier shows better power conversion efficiencies of 28.9% for 915MHz UHF (for ISO 18000 -6) and 15.3% for 2.45GHz microwave (for ISO 18000-4) than those of 26.3% and 26.8% for 915MHz, and 13.2% and 12.6% for 2.45GHz of compared other two existing rectifiers. Therefore, the proposed rectifier may be used as a general purpose rectifier to drive tag chips for various RFID systems.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.65-66
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• 2006

AIGaN/GaN 고전자 이동도 트랜지스터 (High Electron Mobility Transistors, HEMTs)는 와이드 밴드-갭과 높은 항복 전계 및 우수한 채널 특성으로 인해 마이크로파 응용분야와 전력용 반도체에서 각광받고 있다. 최근, 전력 응용분야에서 요구되는 높은 항복 전압과 출력, 우수한 주파수 특성을 획득하기 인해 이중 게이트 AIGaN/GaN HEHTs에 관한 연구가 발표되고 있다. 본 논문에서는 AIGaN/GaN HEMTs에 이중 게이트를 적용하여, 두 개의 게이트와 드레인, 소스의 누설 전류를 각각 측정하여 이중 게이트 AIGaN/GaN HEMTS의 누설 전류 메커니즘을 분석하였다. 또한 제안된 소자의 $SiO_2$ 패시베이션 전 후의 누설 전류 특성을 비교하였다. $SiO_2 $ 패시베이션되지 않은 소자의 누설 전류는 드레인, 소스와 추가 게이트로부터 주 게이트로 흐른 반면, 패시베이션 된 소자 누설 전류는 드레인으로부터 주 게이트 방향의 누설 전류만 존재하였다. $SiO_2$ 패시베이션 된 소자의 누설 전류는 (87.31 nA ) 패시베이션 되지 않은 소자의 누설 전류 ( $8.54{\mu}A$ )에 비해 의게 감소하였다.