• Journal of the Institute of Electronics Engineers of Korea TC
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• v.47 no.10
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• pp.74-79
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• 2010

In this paper, a high gain W-band amplifier is presented using 70 run mHEMT MMIC technology. The length of source feedback line of common-source FET is carefully determined to maximize the gain at a design frequency. Simulation shows that MAG can be increased by 0.8 dB by optimizing the length of this line. In addition, this feedback line changes the input impedance of the common-source FET in a way that the input match can be made easier. In this work, 4-stage amplifier is designed on CPW using the source feedback. The measurement shows the excellent gain performance higher than 22.0 dB across 70~103 GHz.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2006.05a
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• pp.603-606
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• 2006

In this study, we proposed a Modified Log-Periodic Tooth antenna structure with reflector for millimeter wave image sensor of PMMW(Passive Millimeter Wave). PMMW image sensor satisfy the requirements, such as, High Gain, Wideband, and Planar antenna structure.

• Journal of the Korean Geophysical Society
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• v.4 no.4
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• pp.297-311
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• 2001

The gain-clamped EDFA has been developed to eliminate the output power change of WDM surving channels to occur with added or dropped channels, which degrades the performance of WDM optical network. It maintains the constant gain of surviving channels when WDM channels are added or dropped in a network amplifying node. In this paper, the bi-directionally pumped gain-clamped EDFA is implemented to compensate the change of the input power by a lasing. The results show that the lasing of a short wavelength and backward propagation is the optimal condition to minimize the transient response of surviving channels in terms of the overshoot and gain saturation due to the inhomogeneous broadening effect.

• The Journal of Engineering Research
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• v.5 no.1
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• pp.119-133
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• 2004

The gain-clamped EDFA has been developed to eliminate the output power change of WDM surviving channels to occur with added or dropped channels, which degrades the performance of EDM optical network. It maintains the constant gain of surviving channels when WDM channels are added or dropped in a network amplifying node. In this paper, the bi-directionally pumped gain-clamped EDFA is implemented to compensate the change of the input power by a lasing. The results show that the alsing of a short wavelength and backward propagation is the optimal condition to minimize the transient response of surviving channels in terms of the overshoot and gain saturation sue to the inhomogeneous broadening effect.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.17 no.11 s.114
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• pp.1030-1039
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• 2006

A high power and high gain Doherty amplifier is designed by using embedded driver amplifiers in the final stage. The operational characteristics of a two-stage Doherty amplifier are analyzed, as a function of the two-stage peaking amplifier gate biases. The driver stages and final output stages are implemented using two single-ended MRF21045s and a single push-pull packaged MRF5P21180, respectively. This two-stage Doherty amplifier demonstrated 27 dB gain with a PAE of 23 % at 15 W average output power.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.1 s.116
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• pp.62-75
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• 2007

This paper describes a shaped-beam antenna for increasing the antenna gain of a radiating element. The proposed antenna structure is composed of an exciting element and a multi-layered disk array structure(MDAS). The stack micro-strip patch elements were used as the exciter for effectively radiating the electromagnetic power to the MDAS over the broadband, and finite metallic disk array elements - which give the role of a director for shaping the antenna beam with the high gain - were finitely and periodically layered onto it. The efficient power coupling between the exciter and the MDAS should be carried out in such a way that the proposed antenna has a high gain characteristic. The design parameters of the exciter and the MDAS should be optimized together to meet the required specifications to meet the required specifications. In this study, a shaped-beam antenna with high gain was optimally designed under the operating conditions with a linear polarization and the frequency band of $9.6{\sim}10.4\;GHz$. Two methods constructed using thin dielectric film and dielectric foam materials respectively were also proposed in order to implement the MBAS of the antenna. In particular, through the computer simulation process, the electrical performance variations of the antenna with the MDAS realized by the thin dielectric film materials were shown according to the number of disk array elements in the stack layer. Two kinds of antenna breadboard with the MDAS realized with the thin dielectric film and dielectric foam materials were fabricated, but experimentation was conducted only on the antenna breadboard(Type 1) with the MDAS realized with the thin dielectric film materials according to the number of disk array elements in the stack layer in order to compare it with the electrical performance variations obtained during the simulation. The measured antenna gain performance was found to be in good agreement with the simulated one, and showed the periodicity of the antenna gain variations according to the stack layer number of the disk array elements. The electrical performance of the Type 1 antenna was measured at the center frequency of 10 GHz. As the disk away elements became the ten stacks, a maximum antenna gain of 15.65 dBi was obtained, and the measured return loss was not less than 11.4 dB within the operating band. Therefore, a 5 dB gain improvement of the Type 1 antenna can be obtained by the MDAS that is excited by the stack microstrip patch elements. As the disk array elements became the twelve stacks, the antenna gain of the Type 1 was measured to be 1.35 dB more than the antenna gain of the Type 2 by the outer dielectric ring effect, and the 3 dB beam widths measured from the two antenna breadboards were about $28^{\circ}$ and $36^{\circ}$ respectively.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2014.10a
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• pp.753-754
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• 2014

본 논문에서는 차량 충돌 예방 장거리 레이더용 고 이득 및 저 잡음 77GHz CMOS 저 잡음 증폭기를 제안한다. 이러한 회로는 2볼트 전원전압 및 77GHz의 주파수에서 동작한다. 이러한 회로는 TSMC $0.13{\mu}m$ 혼성신호/고주파 CMOS 공정($f_T/f_{MAX}=120/140GHz$)으로 설계되어 있다. 전체 칩 면적을 줄이기 위해 실제 수동형 인덕터 대신 전송선을 이용하였다. 제안한 회로는 최근 발표된 연구결과에 비해 34.33dB의 가장 높은 전압이득과 5.6dB의 가장 낮은 잡음지수 특성을 보였다.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.10a
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• pp.829-831
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• 2012

본 논문은 차량 추돌 예방 레이더용 고 이득 저전력 저잡음 특성을 가진 24GHz 저잡음 증폭기(LNA)를 제안한다. 이러한 회로는 TSMC $0.13{\mu}m$ 혼성신호/고주파 CMOS 공정($f_T/f_{MAX}=120/140GHz$)으로 설계되어 있다. 증폭기의 전압 이득을 향상시키기 위해 2단 캐스코드 구조로 구성되어 있다. 제안한 저잡음 증폭기는 최근 발표된 연구결과에 비해 41dB의 가장 높은 전압이득과 3.7dB의 가장 낮은 잡음지수 및 2.8dBm의 가장 우수한 IIP3 특성을 각각 보였다.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.38 no.11
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• pp.49-54
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• 2001

In this work, we developed a Ka-band hybrid 4-stage power amplifier module using GaAs pHEMTs and waveguide to microstrip transitions. It has high gain and high output power characteristics. We used a 10 mil- thickness duroid substrate to fabricate this power amplifier and waveguide to microstrip transitions. The fabricated waveguide to microstrip transition showed about 1 dB insertion loss(back to back) at 32 40 GHz. The measured results of power amplifier module showed over 1W output power at 36.1 - 37.1 GHz. And it showed 31 dBm output power, 24 dB power gain and 15 % power-added efficiency(PAE) at 36.5 GHz.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.2
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• pp.45-49
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• 2009

In this paper, a direct down conversion LNA/Mixer has been designed and tested for 900Mhz UHF RFID application. The designed circuit has been implemented in 0.18um CMOS technology with 3.3V operation. In this work, a common gate input architecture has been used to cope with the higher input self jamming level. This LNA/Mixer is designed to support two operating modes of high gain mode and low gain mode according to the input jamming levels. The measured results show that the input referred P1dBs are 4dBm of high gain mode and 11dBm of low gain mode, and the conversion gains are 12dB and 3dB in high and low gain mode respectively The power consumptions are 60mW for high gain mode and 79mW for low gain mode. The noise figures are 16dB and 20dB in high gain mode and low gain mode respectively.