• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.2
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• pp.263-268
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• 1998

(100) ZnSe crystals with twin and grain free were grown by vapor transport method. The defect in (100) ZnSe crystals was investigated by FWHM of X-ray Rocking Curve. The growth rate and seed quality are the main parameters of the growth process to obtain the high quality ZnSe crystals. The geometric shape of the grown (100) ZnSe crystal is dependent on the shape of seed, isothermal line in furnace and the growth rate of each surface in crystal.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.2
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• pp.54-58
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• 2014

AlN (Aluminum Nitride) crystals were grown by a PVT (Physical Vapor Transport) method and were characterized to phases on the growth temperature. The crystals phase and morphology were analyzed using an optical stereo-microscope and the optimum temperature for the growing was determined. In this report, the characteristics of the AlN crystals grown at various temperatures were reported.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.2 no.2
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• pp.1-1
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• 1992

YIG(Yttrium Iron Garnet) single crystals were grown by FZ(Floating Zone) method. Since YIG melts incongruently, TSFZ(Traveling Solvent Floating Zone) method which was modified FZ was applied to grow YIG single crystals. The optimum growth condition were growth rate Imm/hr, counter-rotation 30rpm and oxidized atmosphere was necessary to sintering and growth process. The quality of grown crystals depended on the degree of sintering. The voids were generated by the reaction of Fe ions with oxygen and the density of voids was increased with the growth rate increased. When the growth rate was more than 1.5mm/hr, the cellular growth occured and the density of dislocation was increased at the periphery of crystals. Also, secondary phases of orthoferrite(YFe$O_3$)compost ion were observed in the grown crystal.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.25 no.3
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• pp.85-92
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• 2015

SiC crystals are well known for their true potential as high power devices and their crystal growth activity is actively carried out in domestic as well as in abroad. Until now the process to grow this crystal has been done by sublimation technique using radio frequency induction heating method. However in order to get better quality of SiC crystals, the stability of temperature is needed because SiC crystal tends to transform to other polytypes. So, the possibility of SiC crytals growth was evaluated by different heating method. This study aimed to observe whether the resistant heating method would show stable growth and better quality of SiC single crystal than that of RF induction heating. As a result, polycrystalline SiC crystals were grown by the growth rate of 0.02~0.5 mm/hr under the condition of $2100{\sim}2300^{\circ}C$ at the bottom side of the crucible and 10~760 torr. The polycrystalline SiC crystals with 0.25 and 0.5 mm in thickness were grown successfully without seed and characterized by optical stereo microscopic observation.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.5 no.3
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• pp.250-260
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• 1995

In general, a sintered rod is used as a feed in the growth of crystals by the floating zone(FZ) method. The sintering condition of the feed rod affected the stability of molten zone because it influenced the interface shape between the feed and the melt during the crystal growth. In this study, rutile and ruby crystals were chosen as samples to analyze the effect of the microstructures of the feed rods. In sintering of the feed rod for the growth of rutile and ruby single crystals, the difference of grain size between the inner and the outer region of the feed rod increased with the sintering temperature and dwelling time. As a result, it altered melting behavior of the feed. The uniform grain size of the sintered rod was necessary for the optimum growing condition of crystals. The effect of pores in the feed rod was not a dominant factor to grow crystals by the FZ method, which was confirmed by growing crystals with nonsinterd rods as feeds.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.22 no.6
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• pp.265-268
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• 2012

The growth of AlN single crystals of large size and good quality is of prime importance for UV LEDs and power devices applications. However, the crystals having the size of more than 1 inch and high quality have not been reported in the world. In the PVT growth of AlN, the crystal morphology of as grown were important because the preferred orientation of growth of it was evaluated for growth rate increase. In the present study, the AlN single crystals grown by PVT process were evaluated by the side of the growth morphology. Optical microscopic characterization was carried out to observe the shape of the crystals and the growth facets. Furthermore the growth habit of it were discussed by observation of the surface of AlN crystals.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.2 no.1
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• pp.37-42
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• 1992

KDP단결정의 육성을 서냉법 및 정온법에 의해 행하였다. KDP용해도의 온도계수는 20-80℃의 측정온도 범위에서 positive였다. KDP종자결정은 수용액중의 육성온도가 30℃일 때 큰 결정으로 성장하였다. KDP단결정의 tapering효과는 산도, 과포화 및 육성온도에 의존하였다. KDP-ADP결정은 수용액중 33℃의 육성온도에서 얻을 수 있었다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.18 no.2
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• pp.68-71
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• 2008

AlN crystals were grown by the sublimation process. As grown AlN crystals were the polycrystalline boule in the form of the agglomerate of small AlN single crystalline AlN. As-grown AlN boule has a length about 2${\sim}$3 mm long and a diameter of 1 inch. The carbon impurities were observed on the surface and inside of the grown AlN crystals and the growth behavior was investigated by optical microscopy and SEM observation.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.1
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• pp.57-62
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• 1994

$YbFeCoO_4$ single crystal was grown by floating zone method. The atmospheric condition of the growth was controlled in air and the growth rate was 1~2 mm/hr. After melting the feed rod of the composition of $YbFeCoO_4$, $YbFeCoO_4$ was decomposed to $YbFeCoO_4$ and CoO phase in the initial state of the growth. The liquid composition, however, changed to the direction of the eutectic point along the liquidus line and then stopped at the point in which $YbFeCoO_4$ single crystal could be grown. The growth direction of the crystal was preferred orientation [110], perpendicular to the c-axis in the hexagonal system due to using the polycrystalline seed.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.2
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• pp.286-292
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• 1996

The research activities on the thin film crystal growth presented in the Journal of the Korean Association of Crystal Growth form 1991 to 1995 have been reviewed.