• Proceedings of the Korean Society of Precision Engineering Conference
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• 2000.11a
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• pp.963-966
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• 2000

Abrasive jet machining(AJM) process is similar to the sand blasting, and effectively removes hard and brittle materials. AJM has applied to rough working such as deburring and rough finishing. As the needs for machining of ceramics, semiconductor, electronic devices and LCD are increasing, micro AJM was developed, and became the inevitable technique to micromachining. This paper describes the performance of the micro AJM in micro groove cutting of glass. Diameter of hole and width of line in this groove cutting is 80${\mu}{\textrm}{m}$. Experimental results showed good performance in micro groove cutting in glass, but the size of machined groove was increased about 2~4${\mu}{\textrm}{m}$. therefore, this micro AJM could be effectively applied to the micro machining of semiconductor, electronic devices and LCD parts.

• Journal of ILASS-Korea
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• v.14 no.1
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• pp.1-7
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• 2009

This study carried out numerical analysis of flow field of combustion gas and sorbent to test sorbent efficiency of DSI process. To provide rapid mixing for increase utilization rate of sorbent, streamwise vorticity can be introduced into the flowing streams by other means; for example, by installing vortex generators immediately downstream of the wavy trailing edge. Computing results show that the degree of sorbent dispersion depends strongly on duct structure. Highest dispersion efficiency received when vortex generator was installed inside of duct. The results presented in this study a optimum condition for the development of practical DSI process.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.1
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• pp.16-22
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• 1993

A via-hole process for reproducible and reliable GaAs MMIC fabrication is described. The via-hole etching process consists of two step dry etching. During the first etching step a BC $I_{3}$/C $I_{2}$/Ar gas mixure is used to achieve high etch rate and small lateral etching. In the second etching step. CC $L_{2}$ $F_{2}$ gas is used to achieve selective etching of the GaAs substrate with respect to the front side metal layer. Via holes are formed from the backside of a 100$\mu$m thick GaAs substrate that has been evaporated initially with 500.angs. thick chromium and subsequently a 2000.angs. thick gold layer. The fabricated via holes are electroplated with gold (~20$\mu$m thick) to form via connections. The results show that established via-hole process is satisfactory for GaAs MMIC fabrication.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2013.05a
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• pp.795-797
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• 2013

This paper describes a charge sharing capacitive-sensing circuit technique that improves the quality of images captured with fingerprint sensor LSIs. When the finger is dry, the electrical resistance of a finger surface is high. It leads to poor image quality. To capture clear images even when the finger is dry, the modified capacitive detection circuit improves the image quality using an enhancement plate at the finger surface and a voltage control circuit. The test circuit is analyzed on $0.35{\mu}m$ CMOS process.

• Proceedings of the Korean Radioactive Waste Society Conference
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• 2003.11a
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• pp.426-430
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• 2003

Fissionable uranium will be separated from long-lived nuclear materials in pyroprocess for transmutation. This study was measured decomposition voltage and deposition rate on cathode of uranium in $LiF-BeF_2$ molten salt by electrowinning. The result of experimental is that decomposition voltage of $UF_4$ and $LiF-BeF_2$ molten salt is -1.4 and -1.5 volt at $500^{\circ}C$ Deposition rate of uranium on cathode increases with increase of uranium concentration in molten salt.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.11a
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• pp.241-241
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• 2015

플라즈마 건식 식각 기술은 반도체 식각공정에서 효과적으로 이용되고 있으며, 반도체 소자의 크기가 줄어듬에 따라 미세하고 정확하게 식각 깊이를 제어 할 수 있는 원자층 식각기술 많은 관심을 받고 있다. 실리콘을 대체 할 수 있는 우수한 전기적 특성을 가진 III-V 화합물 반도체 재료인 InGaAs에 대한 원자층 식각을 통하여, 흡착가스에 대한 표면흡착 및 탈착가스에 대한 표면탈착 메커니즘을 고찰하였다. 또한, 성분 및 표면분석 장치를 이용하여 InGaAs 원자층 식각 특성에 대해 연구하였다.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2014.11a
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• pp.32-33
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• 2014

수소자동차용 연료전지의 중요 핵심부품 중 하나인 금속분리판의 경우 표면 처리 및 코팅기법을 이용해 전기적 고전도 특성과 화학적 내부식 특성을 확보하는 것이 관건이다. 본 연구내용은 향후 상용화를 목적으로 지금까지 진행해 온 금속분리판을 위한 건식 진공 표면처리 및 코팅기술 개발 현황에 대한 것이다. 생산비용의 저가화와 대량생산 가능성을 고려하여 고속의 연속 전처리법 및 진공증착법을 기본 공정으로 선정하고, 고전도/내부식성 증착물질 선택에도 귀금속을 배제하는 등의 기본 전제와 연구 결과를 소개한다. 기 확보된 기술에 의한 접촉저항 및 내부식 특성은 미국 DOE의 2017년 목표치를 만족하는 결과를 보였다.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.11 no.6
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• pp.952-958
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• 2000

다양한 구조위 트랜스미션 라인과 힌지들을 갖는 고주파용 마이크로머신드 용량성 스위치들이 새롭게 디자인되었고 전기도금 기술, 저온 공정기술, 그리고 건식 식각기술들을 이용하여 제작되었다. 특히, 집적화된 용량성 스위치들이 높은 스위칭 on/off ratio와 on 캐패시턴스를 갖도록 하기 위하여 고유전율을 갖는 SrTiO3라는 상유전체를 절연체로 사용하였다. 제작된 스위치들은 8V의 구동전압, 0.08dB의 삽입손실, 42dB의 높은 isolation, 600의 on/off ratio, 그리고 50pF의 on 캐패시턴스의 특성들을 갖는다.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2005.05a
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• pp.129-133
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• 2005

대기압 글로우 플라즈마를 이용하여 반도체 리드프레임(Alloy 42) 도금 전처리 습식 공정을 건식으로 대체하였다. 13.56 MHz의 RF 전원을 사용하여 300 W 파워에서 안정적인 대기압 글로우 플라즈마를 발생시켰으며, 금속 리드프레임에 플라즈마가 직접 접촉해도 아크나 스트리머 발생이 없었다. 플라즈마 소스 가스로는 알곤(Ar)을 사용하였으며, 활성가스로 산소($O_2$)를 첨가하였다. 300 W 파워에서 산소를 50 sccm 공급하고 100 mm/sec 속도로 리드프레임을 처리한 결과, 처리 전 접촉각이 $82^{\circ}$에서 처리 후 $10^{\circ}$ 이하로 낮아졌다. 플라즈마 처리 후 리드프레임 표면 거칠기 변화를 AFM으로 측정하였다.

• Proceedings of the Korean Institute of Building Construction Conference
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• 2014.11a
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• pp.53-54
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• 2014

This study evaluates engineering properties of mortar using lightweight fine aggregate made by bottom ash discharged air cooling process according to grading. Then we confirm possibility of use as lightweight fine aggregate. Consequently, Mix using bottom ash need additional examination for a change with the passage of time of flow. Also, mix of S indicates similar compressive strength with mix of Plain and 16% decrease of unit weight compared to mix of Plain; while mix of B indicates 10% decrease of compressive strength and 16% decrease of unit weight. Therefore, this study shows that mix of S and B is superior compared with other mix.