• Applied Chemistry for Engineering
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• v.8 no.3
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• pp.395-402
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• 1997

The $SiO_2$ films were prepared by ECR(electron cyclotron resonance) plasma diffusion method, Deal-Grove model and Wolters-Zegers-van Duynhoven model were used to estimate the oxidation rate which was correlated with surface morphology for different orientation of Si(100) and Si(111). It was seen the $SiO_2$ thickness increased linearly with initial oxidation time. But oxidation rate slightly decrease with oxidation time. It was also shown that the oxidation process was controlled by the diffusion of the reactive species through the oxide layer rather than by the reaction rate at the oxide interface. The similar time dependency has been observed for thermal and plasma oxidation of silicon. From D-G model and W-Z model, the oxidation rate of Si(111) was 1.13 times greater than Si(100) because Si(111) had higher diffusion and reaction rate, these models more closely fits the experimental data. The $SiO_2$ surface roughness was found to be uniform at experimental conditions without etching although oxidation rate was increased, and to be nonuniform due to etching at experimental condition with higher microwave power and closer substrate distance.

• Applied Chemistry for Engineering
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• v.27 no.3
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• pp.299-306
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• 2016

In this study, new hydroxyapatite powder surface composites were investigated for protective effects against ultraviolet rays. Hydroxyapatite (HAp) is biocompatible and does not cause nebula phenomenon on skin. We investigated the surface modification of hydroxyapatite to improve UV block and skin usage. Dimethicone, lauroyl lysine, triethoxycaprylylsilane and silica were used as coating agents for the surface modification of HAp. To prepare the composite complex of the modified surface, the dimethicone, lauroyl lysine and triethoxycaprylylsilane were prepared by a dry process, and silica by a hydrothermal synthesis method. The HAp-silica was chosen as the best composite powder when measuring its sun protection levels. We investigated the characteristics of the surface of HAp-silica by SEM, particle size analyzer and energy dispersive spectrometry (EDS). Additionally, the stability in the formulation, UV block effect, and safety in BB creams were investigated. In conclusion, HAp-silica prepared by the modification of HAp complex surface improved the skin usage and UV block effect by enhancing the white cloudy phenomenon. These results indicate that HAp-silica may be used for UV block cosmetics.

• Tunnel and Underground Space
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• v.22 no.6
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• pp.462-470
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• 2012

Implementing the generalized Hoek-Brown failure criterion in the framework of the Mohr-Coulomb criterion requires the calculation of the equivalent friction angle and cohesion. In the conventional method based on the Balmer (1952)'s theory, the tangential instantaneous friction angle and cohesion are expressed in terms of the minimum principal stress ${\sigma}_3$, which does not provide the information about the dependency of the equivalent parameters on the hydrostatic pressure and the stress path. In this study, this defect of the conventional method has been overcome by representing the equivalent parameters in terms of stress invariants. Through the example implementation of the new method, the influence of the magnitude of the hydrostatic pressure and the Lode angle on the tangential instantaneous friction angle and cohesion is investigated. It turns out that the tangential instantaneous friction angle is maximum when the stress condition is triaxial extension, while the tangential cohesion is maximum when the stress condition is triaxial compression. The dependency of the equivalent Mohr-Coulomb strength parameters on the hydrostatic pressure and the Lode angle tends to be more substantial for the favorable rockmass of larger GSI value.

• Journal of the Korean Ceramic Society
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• v.40 no.1
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• pp.18-23
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• 2003

Composite powder of$B_4C-A1_2O_3$was prepared from a mixed powder of$B_2O_3/A1/C$by SHS under argon pressure instead of using a chemical furnace. A mixture of$B_2O_3,$Al and C powder (equivalent amounts to the reaction,$2B_2O_3+4A1+C=B_4C+2A1_2O_3)$was ball milled for 2 h. The mixed powder was placed in a SHS reactor and filled with 10 atm of argon gas and ignited. The inner and outer products were the same by XRD analysis. It was consisted of a composite powder of$B_4C-A1_2O_3$without $AlB_{12}/C_2$which was always produced using a chemical furnace. The composite powder was about$60~100{mu}m$size which was composed of crystalline particles of about 0.3~l${mu}m$size. But when 15 atm of argon was employed, partial sintering took place to give rise hard composite powder of$15~25{mu}m$$B_4C$with $0.1~0.2{mu}m$$A1_2O_3.$

• The Journal of the Petrological Society of Korea
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• v.24 no.2
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• pp.77-90
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• 2015

The fission track registration techniques for accurate determinations of uranium in solid- and liquid-state geological materials were recommended and their applicability were examined. The determination of uranium can be achieved by optical counting of neutron-induced fission tracks of $^{235}U$ registered on solid-state track detectors under high magnification. In a dry registration method using powdered pellets of rocks (e.g., granite and coal) showing good uranium-affinity, it was not easy to decide an overall mean concentration over the total sample owing to track-clusters caused by frequent presence of uranium-bearing minerals. Separate scanning for homogeneous and track-clustered parts may be an alternative choice. Assuring the homogeneity over the whole sample, high reproducibilities were confirmed both from duplicate detections using mica and Lexan polycarbonate detectors and from multiple measurements at different thermal neutron fluences. The wet registration method using sealed quartz tubes is recommended to overcome the common heterogeneity in uranium concentrations of $10^1ppm$ and more. Adopting the wet registration, the uranium homogeneity was recovered below the $10^0ppm$ level and the lower detection limit was proved to reach without difficulty the $10^2ppb$ (i.e. $ng\;g^{-1}$) level.

• Journal of the Korean Vacuum Society
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• v.19 no.4
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• pp.243-248
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• 2010

Sonic nozzles have been a standard device for measurement of steady state gas flow, as recommended in ISO 9300. This paper introduces two sonic nozzles of diameter ${\Phi}$ 0.03 mm and ${\Phi}$ 0.2 mm precisely machined according to ISO 9300. The constant volume flow meter(CVFM), readily set up in the Vacuum center of KRISS. was used to calibrate the discharge coefficients of both nozzles. The calibration results were shown to determine them within the 3% expanded measurement uncertainty. Calibrated sonic nozzles were found to be applicable for precision measurement of steady state gas flow in the vacuum process in the ranges of 0.6~1,800 cc/min. Those flow conditions are equivalent to the fine gas flow with Reynolds numbers of 26~12,100. Those encouraging results confirm that calibrated sonic nozzles enable precision measurement of extremely low gas flow encountered very often in th vacuum processes. Both calibrated sonic nozzles are proven to provide the precision measurement of the volume flow rate of the dry vacuum pump within one percent difference in reference to CVFM. Calibrated sonic nozzles are applied to a new 'in-situ and in-field' equipment designed to measure the volume flow rate of vacuum pumps in the semiconductor and flat display processes. Furthermore, they can provide other applications to flow control devices in vacuum, such as MFC, etc.

• Journal of the Korean Society of Food Science and Nutrition
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• v.38 no.4
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• pp.486-489
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• 2009

This study was performed to evaluate contents and estimated availabilities of major minerals (Ca, P, K, Mg) in soybean sprouts. Two different sampling parts (cotyledon and hypocotyl), and three culture periods (1, 3, and 5 days) were evaluated. Results indicated that Mg (99.11%) from cotyledon for 5 days culture period was significantly higher than Ca (98.34%), P (97.67%), and K (98.70%). Percent average Mg estimated availability of 5 days cultured hypocotyl was also significantly higher than that of Ca (77.79%), P (91.91%), and K (96.80%). Therefore, the current results indicate that decreased Ca estimated availability in hypocotyl was time dependent and the cotyledon may be the better source for the estimated availability of major minerals than the hypocotyl of soybean sprouts because more than 90% of the major minerals was estimated availability.

• Resources Recycling
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• v.14 no.2
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• pp.10-18
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• 2005

The manufacture property of anhydrous calcium sulfate (anhydrite Ⅱ) from flue gas desulfurization (FGD) gypsum discharged from domestic thermoelectric power plants to apply as an auxiliary material of cement and concrete by high temperature treatment were investigated. The FGD gypsum was completely converted to anhydrite Ⅱ at the temperature of 700$^{\circ}C$ and the retention time of 1 hr. In the phase transformation process, particle size was also changed. The chemical composition, particle size and heat property of anhydrite Ⅱ made from the FGD gypsum were similar to them of natural gypsum. In the leaching test of sulfate ion (SO$_4^{2-}$) at the temperature of 90$^{\circ}C$ and the retention time of 1 hr, the amount of leached SO$_4^{2-}$ for the anhydrite Ⅱ that was sintered at 700$^{\circ}C$ for 1 hr was about 50 wt.% based on that of natural gypsum. In addition, the amount of leached SO$_4^{2-}$ for the anhydrite Ⅱ by adding the slaked lime of 3 wt.% decreased about 70 wt.% comparing with that of natural gypsum. In the application test, the compressive strength of cement and concrete manufactured by using the anhydrite Ⅱ as an auxiliary material were similar or superior compared with them of cement and concrete done by natural gypsum as an auxiliary material.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.84-84
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• 2000

수소화된 비정질 실리콘(a-Si:H)과 미세결정질 실리콘 ($\mu$c-Si:H)은 저온.건식 공정인 PECVD로 값싼 유리 기판을 사용하여 넓은 면적에 증착이 가능하다는 큰 장점으로 인해 광전소자(photovoltaic device)와 박막 트랜지스터(TFTs)등에 폭넓게 응용되어 왔으며 최근에는 nm 크기의 실리콘 결정(nc-Si)에서 가시광선 영역의 발광 현상이 발견됨에 따라 광소자로서의 특성을 제어하기 위해서는 성장 조건과 공정 변수에 따른 구조 변화에 대한 연구가 선행되어야 한다. 본 연구에서는 UHV-ECR-PECVD 법을 이용하여 H2로 희석된 SiH4로부터 a-Si:H과 $\mu$c-Si:H를 증착하였다. 그림 1은 SiH4 20sccm/H2 50sccm/25$0^{\circ}C$에서 기판의 DC bias를 변화시키면서 박막을 증착시킬 때 나타나는 박막의 구조 변화를 raman spectrum의 To phonon peak의 위치와 반가폭의 변화로 나타낸 것이다. 비정질 실리콘 박막은 DC bias를 증가시킴에 따라 무질서도가 증가하다가 어떤 critical DC bias에서 최대치를 이룬후 다시 질서도가 증가한다. 이온의 충격력에 의해 박막내에 응력이 축적되면 박막의 에너지 상태가 높아지고 이 축적된 응력이 ordering에 대한 에너지 장벽을 넘을 수 있을 만큼 커지게 되면 응력이 풀리면서 ordering이 가능해지는 것으로 생각된다. 그림 2는 수소 결합 형태의 변화이다. 박막의 무질서도가 증가할 경우 알려진 바와 같이 2000cm-1근처의 peak은 감소하고 2100cm-1 부근이 peak이 증가하는 현상을 보였다. 본 논문에서는 여러 공정 변수, 특히 DC bias에 따르는 박막의 구조 변화와 다른 성장 조건(온도, 유량비)이 critical DC bias나 결정화, 결정성 등에 미치는 영향에 대한 분석결과를 보고하고자 한다.등을 이용하여 광학적 밴드갭, 광흡수 계수, Tauc Plot, 그리고 파장대별 빛의 투과도의 변화를 분석하였으며 각 변수가 변화함에 따라 광학적 밴드갭의 변화를 정량적으로 조사함으로써 분자결합상태와 밴드갭과 광 흡수 계수간의상관관계를 규명하였고, 각 변수에 따른 표면의 조도를 확인하였다. 비정질 Si1-xCx 박막을 증착하여 특성을 분석한 결과 성장된 박막의 성장률은 Carbonfid의 증가에 따라 다른 성장특성을 보였고, Silcne(SiH4) 가스량의 감소와 함께 박막의 성장률이 둔화됨을 볼 수 있다. 또한 Silane 가스량이 적어지는 영역에서는 가스량의 감소에 의해 성장속도가 둔화됨을 볼 수 있다. 또한 Silane 가스량이 적어지는 영역에서는 가스량의 감소에 의해 성장속도가 줄어들어 성장률이 Silane가스량에 의해 지배됨을 볼 수 있다. UV-VIS spectrophotometer에 의한 비정질 SiC 박막의 투과도와 파장과의 관계에 있어 유리를 기판으로 사용했으므로 유리의투과도를 감안했으며, 유리에 대한 상대적인 비율 관계로 투과도를 나타냈었다. 또한 비저질 SiC 박막의 흡수계수는 Ellipsometry에 의해 측정된 Δ과 Ψ값을 이용하여 시뮬레이션한 결과로 비정질 SiC 박막의 두께를 이용하여 구하였다. 또한 Tauc Plot을 통해 박막의 optical band gap을 2.6~3.7eV로 조절할 수 있었다. 20$0^{\circ}C$이상으로 증가시켜도 광투과율은 큰 변화를 나타내지 않았다.부터 전분-지질복합제의 형성 촉진이 시사되었다.이것으로 인하여 호화억제에 의한 노화 방지효과가 기대되었지만 실제로 빵의 노화는 현저히 진행되었다. 이것은 quinua 대체량 증가에 따른 반죽의 안정성이 저하되어 버린 것으로 생각되어진다. 더욱이 lipase를 첨가하면 반죽이 분화하는 경향이 보여졌지만 첨가량 75ppm에 있어서 상당히 비용적의 증대가 보였다. 이것은 lipase의 가수분해에 의해

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.123-123
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• 2010

3족 질화물계 물질은 발광다이오드와 같은 광전자소자적용에 있어서 매우 우수한물 질이다.일반적으로, GaN 에피 성장에 있어서 저온 중간층을 삽입한 2 단계 성장 방법은 낮은 결함밀도와 균일한 표면을 얻기 위해 도입된 기술이다. 특히 AlN 중간층은 GaN 중간층과 비교하였을 때 결정성뿐만 아니라 높은 온도에서의 열적안정성, GaN 기반의 자외선 검출기서의빛 흡수 감소 등의 장점을 가지고 있다. 또한 패턴 사파이어 기판위 GaN 에피 성장은 측면성장 효과를 통해 결함 밀도 감소와 광 추출 효율을 향상시키는 것으로 알려져 있다.또한 열응력으로 인한 기판의 휨 현상은 박막성장중 기판의 온도 분포를 불균일하게 만드는 원인이 되며 이는 결국 박막 조성 및 결정성의 열화를 유도하게 되고 최종적으로 소자특성을 떨어 뜨리는 원인이 되는데 AlN 중간층의 도입으로 이것을 완화시킬 수 있는 효과가 있다. 하지만, AlN 중간층이 패턴된 기판 위에 성장시킨 GaN 에피층에 미치는 영향은 명확하지 않다. 본 연구팀은 일반적인 c-plane 사파이어 기판과 플라즈마 건식 에칭을 통한 렌즈 모양의 패턴된 사파이어 기판을 이용해서 AlN 중간층과 GaN 에피층을 유기금속 화학기상증착법으로 성장하였다. 특히, 렌즈 모양의 패턴된 사파이어 기판은 패턴 모양과 패턴 밀도가 성장에 미치는 영향을 연구하기 위해 두가지 패턴의 사파이어 기판을 이용하였다. AlN 중간층 두께를 조절함으로써 최적화된 GaN 에피층을 90분까지 4단계로 시간 변화를 주어 성장 양상을 관찰한 결과, GaN 에피박막의 성장은 패턴 기판의 trench 부분에서 시작하여 기판의 패턴부분을 덮는 측면 성장을 보이고있다. 또한 TEM과 CL을 통해 GaN 에피박막의 관통 전위를 분석해 본 결과 측면 성장과정에서 성장 방향을 따라 옆으로 휘게 됨으로 표면까지 도달하는 결정결함의 수가 획기적으로 줄어드는 것을 확인함으로써 고품질의 GaN 에피층을 성장시킬 수 있었다. 그리고 패턴밀도가 높고 모양이 볼록할수록 측면 성장 효과로 인한 결정성 향상과 난반사 증가를 통한 임계각 증가로 광추출 효율이 향상 되는 것을 확인할 수 있었다. 이러한 결과를 바탕으로 최적화된 AlN 중간층을 이용하여 패턴 기판위에서 고품질의 GaN 에피층을 성장시킬 수 있었다.