• Title/Summary/Keyword: 강유전 특성

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The study of ferroelectric properties for Pb(Mg1/3Ta2/3)O3-PbTiO3 solid solution modified with ZrO2 (ZrO2 첨가에 따른 Pb(Mg1/3Ta2/3)O3-PbTiO3 고용체의 강유전 특성 연구)

  • Kim, B.G.
    • Journal of the Korean Vacuum Society
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    • v.17 no.4
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    • pp.317-321
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    • 2008
  • The $0.65Pb(Mg_{1/3}Ta_{2/3})O_3-0.35PbTiO_3$ (PMT-PT)ceramics were near morphotropic phase boundary. The dielectric constant, the loss, and pyroelectric coefficient of the ceramics were measured as a function of temperature ($25^{\circ}C\;{\sim}\;250^{\circ}C$). The dielectric constant, the loss, and the pyroelectric coefficient could be improved with the addition of small amounts of $ZrO_2$ up to 0.2 mol%. The dielectric and pyroelectric peak temperature are slightly shifted to lower temperatrues with the addition of amount of $ZrO_2$.

Variations of ferroelectric properties with the addition of Yttrium acetate in the $Pb(Zr_{0.65}Ti_{0.35})O_3$ thin films prepared by Sol-Gel processing (Sol-Ge법에 의한 $Pb(Zr_{0.65}Ti_{0.35})O_3$박막의 Yttrium acetate 첨가에 따른 강유전 특성의 변화)

  • 김준한;이규선;이두희;박창엽
    • Electrical & Electronic Materials
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    • v.8 no.3
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    • pp.261-266
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    • 1995
  • In this study, PZT solutions added impurities of Yttrium acetate were prepared by sol-gel processing and were deposited on Pt/ $SiO_{2}$/Si substrates at 5000 rpm for 20 sec. using spin-coating method. Coated films were annealed at 700-750.deg. C for 30 min. using conventional furnace method. Variations of the crystallographic structure and microstructure of PZT thin films with adding impurities were observed using XRD and SEM, and the electrical properties, such as relative permittivity, tan .delta., hysteresis curves and leakage currents, were measured. As the yttrium contents were increased, the remanent polarization and coercive field were decreased. Variations of remanent polarizations and coercive fields of pure and yttrium doped specimens according to polarization reversal cycles were observed using hysteresis measurement. PZT thin films added $Y^{3+}$ ions were completely crystallized at 750.deg. C. $Y^{3+}$ ions, as donor impurity, substituted Pb.sup 2+/ ions located at A-site of perovskite structure. By substitution of $Y^{3+}$ ions, leakage currents became less by decreasing the space charges. Degradation of remanent polarizations of Yttrium added specimens after fatigue was not observed and coercive fields increased more than those of pure PZT thin films.

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Pb(${Zr_{0.45}}{Ti_{0.55}}$Ferroelectric Thick Films on Stainless Steel Substrates (스테인레스 스틸 기판 위에 제조된 Pb(${Zr_{0.45}}{Ti_{0.55}}$후막의 강유전 특성)

  • 이지현
    • Journal of the Korean Ceramic Society
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    • v.37 no.10
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    • pp.975-980
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    • 2000
  • 스테인레스 스틸 기판 위에 Pb($Zr_{0.45}$ $Ti_{0.55}$) $O_3$후막을 졸-겔 스핀 코팅법으로 제조하였다. 스테인레스 스틸은 그 자체로 좋은 도체이지만 PZT 후막의 강유전 특성을 개선하고자 Ru $O_2$박막을 중간층 겸 하부전극으로 사용하였다. PZT 전구체 용액을 코팅하고 급속 열처리하였을 때 5$50^{\circ}C$ 이하에서 pyrochlore 상이 먼저 나타났고 이 transient 상은 61$0^{\circ}C$에서 모두 perovskite 상으로 변화하였다. $600^{\circ}C$에서 열처리된 PZT 후막은 잔존하는 pyrochlore로 인해 걸어준 전기장에 무관하게 5-7$\mu$C/$ extrm{cm}^2$의 낮은 $P_{r}$값을 나타내었으나 61$0^{\circ}C$ 이상에서 열처리된 시편들은 모두 25$\mu$C/$\textrm{cm}^2$ 이상의 잔류분극을 가지고 있었다. 또한 Ru $O_2$중간층이 PZT의 강유전성에 미치는 영향을 조사하였을 때 잔류분극 값은 거의 영향을 받지 않았으나 항전계 값은 상당한 영향을 받았다. 즉 100nm 두께의 Ru $O_2$박막을 중간층으로 사용할 경우 중간층 없이 직접 스테인레스 스틸 위에 코팅할 때에 비해 항전계 값을 45% 가량 줄일 수 있었다.

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Dielectric Properties and Ordering Structures of Pb(Fe1/2Ta1/2)O3-Pb(Fe1/2Nb1/2)O3 Solid Solutions (Pb(Fe1/2Ta1/2)O3-Pb(Fe1/2Nb1/2)O3 고용체의 유전특성 및 질서배열구조)

  • Woo, Byong-Chul;Kim, Byung-Kook;Lee, Jong-Ho;Park, Hyun-Min;Kim, Byong-Ho
    • Journal of the Korean Ceramic Society
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    • v.39 no.9
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    • pp.863-870
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    • 2002
  • The Single phase $Pb(Fe_{1/2}Ta_{1/2})O_3$ (x=0.0∼1.0) solid solutions were successfully synthesized and their ordering structures as well as dielectric properties were investigated ${{r(Nb^{5+})=r(Ta^{5+})=0.78 {\AA},\;AW(Nb^{5+})=92.91,\;AW(Ta^{5+})=180.95}}$. While $Pb(Fe_{1/2}Ta_{1/2})O_3$ showed typical relaxor ferroelectric characteristics such as dielectric relaxation and diffuse phase transition, the sharpeness of the phase transition increased as $Ta^{5+}$ was replaced by $Nb^{5+}$ and finally $Pb(Fe_{1/2}Nb_{1/2})O_3$ showed normal ferroelectric characteristics with no dielectric relaxation. By using Raman spectroscopy, it was revealed that the $Fe^{3+}\;and\;Ta^{5+}\;of\;Pb(Fe_{1/2}Ta_{1/2})O_3$ were stoichiometrically 1:1 ordered within the short range which can be hardly probed even by TEM. Also, The degree of ordering in $Pb(Fe_{1/2}Ta_{1/2})O_3$ decreased as $Ta^{5+}$ was replaced by $Nb^{5+}$ and finally $Fe^{3+}\;and\;Nb^{5+}\;of\;Pb(Fe_{1/2}Nb_{1/2})O_3$ were completely disordered. The relaxor ferroelectric characteristics of $Pb(Fe_{1/2}Ta_{1/2})O_3$ could be correlated with the stoichiometric 1:1 ordering of B-site cations within the short range which can be hardly probed even by TEM. Also, the decrease of the relaxor ferroelectric characteristics with the replacement of $Ta^{5+}\;by\;Nb^{5+}$ could be correlated with the weakening of the ordering and the normal ferroelectric characteristics of $Pb(Fe_{1/2}Nb_{1/2})O_3$ could be correlated with the complete disordering of B-site cations.

Fabrication of $Ba_xSr_{1-x}TiO_3$(BST) Thin Films by Sol-Gel Method and their Dielectric Properties (Sol-Gel 법에 의한 BST 강유전 박막의 합성과 유전 특성)

  • Jang, Su-Ik;Choe, Byeong-Cheol;Jang, Hyeon-Myeong
    • Korean Journal of Materials Research
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    • v.6 no.5
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    • pp.449-456
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    • 1996
  • BaO, SrCI2.6H2O 그리고 Ti(OPri)4를 출발 원료로 사용하여 균일한 BaxSr1-xTiO3(BST) 솔을 합성하였고, BST 박막을 회전 코팅 법으로 Si 및 Pt/Ti/SiO2/Si 기판위에 제조하였다. 적외선 및 NMR 스펙트럼 분석으로 킬레이션 조제로 사용한 acetylacetone(AcAc)이 엔올 형태로 Ti-알콕사이드와 결합하여 솔 안정화에 기여함을 확인하였다. Xedrogel에 대한 DT/TGA 및 적외선 스펙트럼 결과로부터 페로브스카이트 상생성이 $600^{\circ}C$ 이상에서 이루어짐을 관찰하였다. $700^{\circ}C$에서 열처리한 박마은 -300(10 KHz)의 상대유전율을 나타내었고, 결정립의 저항 및 입계의 병렬 RC 성분으로 등가회로를 구성할 수 있었다.

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Fabrication and properties of ferroelectric BST thin films prepared by sol-gel method (졸-겔법에 의한 강유전 BST 박막의 제조 및 특성)

  • 이진홍;박병옥
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.11 no.2
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    • pp.60-66
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    • 2001
  • ($Ba_x$$Sr_{1-x}$)$TiO_3$ (x=0.9, 0.7, 0.5) thin films were prepared on ITO-coated glass by sol-gel method. Perovskite phase formation temperature of BST thin films seemed to be higher than $600^{\circ}C$. Peaks of perovskite phase shift to high diffraction angles as the Sr/(Ba+Sr) ratio was increased, due to the smaller ionic size of $Sr^{2+}$ than $Ba^{2+}$ . As a heating temperature was increased, the grain became coarser. And as Sr/(Ba + Sr) ratio was increased, the grain became finer. Dielectric constants of the BST(50/50) thin film are higher and dielectric losses of that are lower than those of the others. Dielectric constant and dielectric loss of the BST(50/50) thin film were 652 and 0.042 at 1kHz, respectively.

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Polymer Substrate Materials with Low Dielectric Loss Using Dicyclopentadienyl Bisphenol Cyanate Ester and Polyphenylene Ether (다이사이클로펜타다이에닐 비스페놀 시아네이트 에스터와 폴리페닐렌에테르를 이용한 저유전손실 고분자 기판 소재)

  • Kim, Dong-Kook;Park, Seong-Dae;Lee, Woo-Sung;Yoo, Myong-Jae;Park, Se-Hoon;Lim, Jin-Kyu;Kyoung, Jin-Bum
    • Polymer(Korea)
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    • v.31 no.6
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    • pp.474-478
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    • 2007
  • Polymer substrate materials with low dielectric loss were obtained by fabricating the composite using dicyclopentadienyl bisphenol cyanate ester oligomer and polyphenylene ether (PPE). From the analysis of the curing reaction of oligomer and catalyst, it was observed that the optimum amount of catalyst was 0.02 phr of Zn content. It was applied to the fabrication of polymer composite. By changing oligomer/PPE weight ratio, the peel strength and the gel content of the fabricated composites were measured, and then, the dielectric constant and the dissipation factor were measured in the GHz frequency range. The amount of PPE affected the peel strength and the dielectric properties of composites. However, the amount of catalyst did not affect them at all. Resulting from all experiments, we obtained polymer composite laminates haying the peel strength of above 1 kN/m and the low dissipation factor of 0.004 at 1 GHz.