• Title/Summary/Keyword: 감지증폭기

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Fabrication and Operating of 155.52 Mbps CMOS Receiver for Fiber Optic Modules (광통신 모듈용 155.52 Mbps CMOS 리시버제작 및 구현)

  • 이길재;채상훈
    • Proceedings of the KAIS Fall Conference
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    • 2000.10a
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    • pp.199-202
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    • 2000
  • STM-1 체계의 광통신 수신부 광모듈에 내장하기 위한 155.52 Mbps 리시버 ASIC을 0.65 ㎛ 실리콘 CMOS 기술을 이용하여 설계 제작하였다. 재작된 ASIC은 155.52 Mbps 데이터신호 재정형을 위한 제한 증폭기와 155.52 MHz 클럭을 추출하기 위한 클럭 추출 회로를 주축으로 구성되어 있다. 또한 이 리시버는 전원이 켜지는 초기 동사 상태에서나 동작 도중 데이터신호가 입력되지 않더라도 155.52 MHz 부근의 클럭주파수를 유지하여 항상 안정된 동작을 할 수 있게 하기 위한 수렴 보조 회로 및 LOS 감지 회로도 내장하고 있다. 측정 결과 설계된 리시버는 1 mV- 1 V의 넓은 입력 전압에 걸쳐 데이터 재정형이 이루어지며, 155.52 MHz의 안정된 클럭을 추출하고 있음을 알 수 있었다.

Selective Operating Preamplifier Circuit for Low Voltage Static Random Access Memory (저전압 에스램용 선별 동작 사전 증폭 회로)

  • Jeong, Hanwool
    • Journal of IKEEE
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    • v.25 no.2
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    • pp.309-314
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    • 2021
  • The proposed preamplifier for the static random access memory reduces the time required for the sense amplifier enable during the read operation by 55%, which leads to a significant speed up the total spped. This is attirbuted to the novel circuit techqniue that cancels out the transistor mismatch which is induced by the process variation. In addition, a selective enable circuit for preamplifier circuit is proposed, so the proposed preamplifier is enabled only when it is required. Accordingly the energy overhead is limited below 4.45%.

New Implementation Method of the Pulsed Nuclear Magnetic Resonance Apparatus (펄스방식의 핵자기 공명장치에 관한 새로운 구현방법)

  • 김청월
    • Journal of the Korean Institute of Telematics and Electronics C
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    • v.35C no.10
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    • pp.1-11
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    • 1998
  • This paper presents a new implementation method of the pulsed NMR(nuclear magnetic resonance) apparatus, which contains a single coil in a magnet console, to detect a NMR signal. Applying an RF magnetic field of 5MHz to the magnet console which is designed to have Larmor frequency of 5MHz for hydrogen atom, the hydrogen NMR signal was obtained from the glycerin which was put in the magnet console as a sample. The DC magnetic field in the magnet console was implemented with a permanent magnet of 1168 gauss and the RF magnetic field was generated appling an RF signal with the frequency of 5MHz and the current magnitude of 8A to a coil of 5.73${\mu}$H. The magnitude of the NMR signal was maximum when the RF magnetic field was generated for 2.8 ${\mu}$sec, and the period of generating the RF magnetic field was designed to 100msec for detecting the NMR signal repeatedly. The NMR signal, radiated from the sample in the magnetic console, was appeared as an amplitude-modulated signal with a frequency equal to the Larmor frequency. The signal, induced in the coil, was amplified in the tx/rx separation circuit, preamplifier and intermediate amplifier by a factor of 20.7dB, 36dB and 40dB, respectively, and the signal was detected by a synchronous detection circuits, then the NMR signal was obtained.

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Design of Synchronous 256-bit OTP Memory (동기식 256-bit OTP 메모리 설계)

  • Li, Long-Zhen;Kim, Tae-Hoon;Shim, Oe-Yong;Park, Mu-Hun;Ha, Pan-Bong;Kim, Young-Hee
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.12 no.7
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    • pp.1227-1234
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    • 2008
  • In this paper is designed a 256-bit synchronous OTP(one-time programmable) memory required in application fields such as automobile appliance power ICs, display ICs, and CMOS image sensors. A 256-bit synchronous memory cell consists of NMOS capacitor as antifuse and access transistor without a high-voltage blocking transistor. A gate bias voltage circuit for the additional blocking transistor is removed since logic supply voltage VDD(=1.5V) and external program voltage VPPE(=5.5V) are used instead of conventional three supply voltages. And loading current of cell to be programmed increases according to RON(on resistance) of the antifuse and process variation in case of the voltage driving without current constraint in programming. Therefore, there is a problem that program voltage can be increased relatively due to resistive voltage drop on supply voltage VPP. And so loading current can be made to flow constantly by using the current driving method instead of the voltage driving counterpart in programming. Therefore, program voltage VPP can be lowered from 5.9V to 5.5V when measurement is done on the manufactured wafer. And the sens amplifier circuit is simplified by using the sens amplifier of clocked inverter type instead of the conventional current sent amplifier. The synchronous OTP of 256 bits is designed with Magnachip $0.13{\mu}m$ CMOS process. The layout area if $298.4{\times}314{\mu}m2$.

Real-Time Respiration and Heartbeat Detector Using a Compact 1.6 GHz Single-Channel Doppler Sensor (소형화된 1.6 GHz 단일 채널 도플러 센서를 이용한 실시간 호흡 및 심장 박동 감지기)

  • Lee, Hyun-Woo;Park, Il-Ho;Kim, Dong-Wook
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.18 no.4 s.119
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    • pp.379-388
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    • 2007
  • This paper presents a real-time respiration and heartbeat detector comprised of a 1.6 GHz single-channel Doppler sensor and analog/digital signal processing block for remote vital sign detection. The RF front end of the Doppler sensor consists of an oscillator, mixer, low noise amplifier, branch-line hybrid and patch antenna. We apply artificial transmission lines(ATLs) to the branch-line hybrid, which leads to a size reduction of 40 % in the hybrid, while its performance is very comparable to that of a conventional hybrid. The analog signal conditioning block is implemented using second order Sallen-Key active filters and the digital signal processing block is realized with a LabVIEW program on a computer. The respiration and heartbeat detection is demonstrated at a distance of 50 cm using the developed system.

Development of Passive Millimeter-wave Security Screening System (수동 밀리미터파 보안 검색 시스템 개발)

  • Yoon, Jin-Seob;Jung, Kyung Kwon;Chae, Yeon-Sik
    • Journal of the Institute of Electronics and Information Engineers
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    • v.53 no.7
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    • pp.138-143
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    • 2016
  • The designed and fabricated millimeter-wave security screening system receives radiation energy from an object and a human body. The imaging system consist of sixteen array antennas, sixteen four-stage LNAs, sixteen detectors, an infrared camera, a CCD camera, reflector, and a focusing lens. This system requires high sensitivity and wide bandwidth to detect the input thermal noise. The LNA module of the system has been measured to have 65.8 dB in average linear gain and 82 GHz~102 GHz in bandwidth to enhance the sensitivity for thermal noise, and to receive it over a wide bandwidth. The detector is used for direct current (DC) output translation of millimeter-wave signals with a zero bias Schottky diode. The lens and front-end of the millimeter-wave sensor are important in the system to detect the input thermal noise signal. The frequency range in the receiving sensitivity of the detectors was 350 to 400 mV/mW at 0 dBm (1 mW) input power. The developed W-band imaging system is effective for detecting and identifying concealed objects such as metal or plastic.

Implementation Issues in Brain Implantable Neural Interface Microsystem (뇌 삽입형 신경 접속 마이크로 시스템의 구현상 이슈)

  • Song, Yoon-Kyu
    • Journal of the Institute of Electronics and Information Engineers
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    • v.50 no.4
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    • pp.229-235
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    • 2013
  • In this paper, we investigate several important issues on the implementation of a totally implantable microsystem for brain-machine interface that has been attracting a lot of attention recently. So far most of the scientific research has been focused on the high performance, low power electronics or systems such as neural signal amplifiers and wireless signal transmitters, but the real application of the implantable microsystem is affected significantly by a number of factors, ranging from design of the encapsulation structure to physiological and anatomical characteristics of the brain. In this work, we discuss on the thermal effect of the system, the detecting volume of the neural probes, wireless data transmission and power delivery, and physiological and anatomical factors that are critically important for the actual implementation of a totally brain implantable neural interface microsystem.

A Study on the Exoskeleton Robot Operations to Assist the Upper Limbs Power (상지 근력 증강을 위한 외골격 로봇의 동작기법 연구)

  • Choi, Jae-Heung;Oh, Seong-Nam;Chu, Kyong-Ho;Son, Young-Ik;Kim, Kab-Il
    • Proceedings of the KIEE Conference
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    • 2011.07a
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    • pp.1918-1919
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    • 2011
  • 상체 지원 외골격 로봇은 크게 인간의 근력을 보조하는 형태와 인간의 근력을 증강하는 형태가 있다. 여기서는 인간의 근력을 증강하는 외골격 로봇을 중심으로 기술하고자 한다. 이러한 외골격 로봇은 팔의 EMG (Electromyograph;근전도) 신호를 측정하는 방법보다는 손의 힘을 직접 감지하는 방법을 통한 팔꿈치와 어깨의 엑추에이터를 구동하는 방식을 취하는 경향이 있다. 본 논문에서도 후자의 방식을 이용하여 손에 작용하는 힘을 분석하여 외골격 로봇을 움직이는 방식을 취하였다. 손의 힘 중에서도 인간을 중심으로 볼 때 위방향과 전진방향의 힘을 분석하기 위하여 2개의 F/T(Force/Torque) 센서를 사용하였으며 팔을 벌리는 동작은 엑추에이터 없이 자유롭게 동작이 가능하도록 설계하였다. 이러한 위방향 및 전진방향 힘의 크기를 팔꿈치와 어깨의 엑추에이터의 동작으로 바꾸어 인간의 동작을 도울 수 있고 힘을 증폭할 수 있는 외골격 로봇을 설계 제작하였다. F/T 센서는 손의 힘을 전기적 신호로 바꾸어주는 로드셀로 이루어지며 손의 힘을 최대한 잘 반영하기 위한 구조를 고안하였다. F/T 센서의 전기신호는 증폭기를 거쳐서 잡음을 제거한 후에 A/D 변환하여 processor에서 처리되어진다.

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Fabrication of absolute silicon pressure sensor using SDB wafer (SDB 웨이퍼를 이용한 절대압 실리콘 압력센서의 제조)

  • Lee, Chang-Jun;Kang, Shin-Won;Choi, Sie-Young
    • Journal of Sensor Science and Technology
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    • v.4 no.1
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    • pp.29-34
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    • 1995
  • The absolute silicon pressure sensors are fabricated using SDB(silicon direct bonded) wafer. The fabricated pressure sensors consist of four bridge type piezoresistances and a diaphragm which plays a role of mechanic amplifier to supplying pressure. In order to make the diaphragm cavity in low vaccum condition, we anodically bonded Si diaphragm with pyrex 7740 glass in 0.02mmHg, at $400^{\circ}C$. The sensitivity and offset voltage of the fabricated sensors were $30.4{\mu}V/VmmHg$ and 30.6mV, respectively.

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Fabrication and Characteristics of Surface-Acoustic-Wave Sensors for Detecting $NO_2$ GaS ($NO_2$ 가스 감지를 위한 표면탄성파 센서의 제작 및 특성)

  • Choi, D.H.
    • Journal of Sensor Science and Technology
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    • v.8 no.2
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    • pp.108-114
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    • 1999
  • Surface acoustic wave (SAW) device is very attractive for gas sensor applications because of their small size, low cost, high sensitivity, and good reliability. A dual delay line surface acoustic wave $NO_2$ gas sensors have been designed and fabricated on the $LiTaO_3$ piezoelectric single crystal substrate. The capacitance of the fabricated IDTs was 326.34pF at the frequency of 79.3MHz. The maximum reflection loss of the impedence-matched IDTs was -16.74dB at the frequency of 79.3MHz. The SAW oscillator was constructed and the stable oscillation was obtained by controlling the gain of rf amplifier properly. The oscillation frequency shift of the SAW oscillator to the $NO_2$ gas was 28Hz/ppm.

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