• Proceedings of the Korean Society of Computer Information Conference
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• 2019.07a
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• pp.157-158
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• 2019

발전소 관리의 단기 전력 수요에 대한 정확한 예측은 전력 시스템의 안전하고 효율적인 작동을 보장하는데 필수적이다. 따라서 본 연구는 가우스 커널 함수 네트워크 (GKFNs)의 심층 구조를 이용하여 일일 최대 전력 수요를 예측하는 새로운 방법을 제시한다. 제안 된 GKFN의 깊이 구조는 표준 GKFN에 비해 예측 정확도를 향상시킨다. 한국의 일일 최대 전력 수요를 예측하기위한 시뮬레이션은 제안 된 예측 모델이 GKFN 모델, k-NN 및 SVR과 같은 다른 예측 모델에 비해 예측 성능에 이점이 있음을 보여준다. GKFN의 제안된 심층 구조는 시계열 예측 및 회귀 문제의 다양한 문제에 적용될 수 있다.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.11
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• pp.2621-2626
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• 2013

This paper has presented the potential distribution for asymmetric double gate(DG) MOSFET, and sloved Poisson equation to obtain the analytical solution of potential distribution. The symmetric DGMOSFET where both the front and the back gates are tied together is three terminal device and has the same current controllability for front and back gates. Meanwhile the asymmetric DGMOSFET is four terminal device and can separately determine current controllability for front and back gates. To approximate with experimental values, we have used the Gaussian function as doping distribution in Poisson equation. The potential distribution has been observed for gate bias voltage and gate oxide thickness and channel doping concentration of the asymmetric DGMOSFET. As a results, we know potential distribution is greatly changed for gate bias voltage and gate oxide thickness, especially for gate to increase gate oxide thickness. Also the potential distribution for source is changed greater than one of drain with increasing of channel doping concentration.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.3
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• pp.651-656
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• 2014

This paper analyzed the change of subthreshold swing for channel doping of asymmetric double gate(DG) MOSFET. The subthreshold swing is the factor to describe the decreasing rate of off current in the subthreshold region, and plays a very important role in application of digital circuits. Poisson's equation was used to analyze the subthreshold swing for asymmetric DGMOSFET. Asymmetric DGMOSFET could be fabricated with the different top and bottom gate oxide thickness and bias voltage unlike symmetric DGMOSFET. It is investigated in this paper how the doping in channel, gate oxide thickness and gate bias voltages for asymmetric DGMOSFET influenced on subthreshold swing. Gaussian function had been used as doping distribution in solving the Poisson's equation, and the change of subthreshold swing was observed for projected range and standard projected deviation used as parameters of Gaussian distribution. Resultly, the subthreshold swing was greatly changed for doping concentration and profiles, and gate oxide thickness and bias voltage had a big impact on subthreshold swing.

• Journal of the Korean Institute of Telematics and Electronics S
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• v.34S no.12
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• pp.19-29
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• 1997

This paper presents stable kinematic modeling and path planning and path tracking algorithms for the poisition control of 4-wheeled 2-d.o.f(degree of freedom) mobile robot. We drived the actuated inverse and sensed forward solution for the calculation of actuator velocity and robot velocities. the deal-reckoning algorithm is introduced to calculate the position of WMR in real time. The gaussian functions are applied to control and to design the smooth orientation angle of WMR and the path planning algorithm for obstacle avoidance is prosed. We composed feedback control system to compensate for error because of uncertainty kinematic modeling and measurement noise. The simulation resutls show that the proposed kinematkc modeling and path planning and feedback control algorithms are useful.

• The Korean Journal of Applied Statistics
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• v.19 no.2
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• pp.241-256
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• 2006

We generalize the $Cram{\acute{e}}r$-von Mises Statistic to test multivariate normality using Roy's union-intersection principle. We show the limit distribution of the suggested statistic is representable as the integral of a suitable Gaussian process. We also consider the computational aspects of the proposed statistic. Power performance is assessed in a Monte Carlo study.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.16 no.9
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• pp.838-849
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• 1991

An accurate approximation based on the integration of the characteristic function of the multiple access interference which consists of specular and scatter components is obtained for the average probability of error for asynchronous binary PSK direct sequence spread spectrum multiple access(DS/SSMA) communications system operating over nonselective fading channels with additive white Gaussian and impulsive noise channels.

• Journal of Korean Society of Coastal and Ocean Engineers
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• v.25 no.1
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• pp.11-19
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• 2013

As the temperature data show a distribution pattern with a number of peaks, assumption of normal distribution will result in a serious bias in the analysis. In this study, the Gaussian Mixture Distribution (GMD), a type of bimodal distribution, is presumed as a frequency distribution for the water temperature, in order to estimate the optimal parameter and to carry out the relation analysis between the optimal parameter and the basic statistical information such as mean and variance on the data. By the way, an estimation formulae to compute the frequency distribution of the data is developed by computing the parameters of GMD (i.e. ${\alpha}_1$, ${\mu}_1$, ${\sigma}_1$, ${\alpha}_2$, ${\mu}_2$, ${\sigma}_2$) by means of the major characteristic values, such as mean, standard deviation and skewness of the data. The formulae shows an excellent coincidence with the result from the observation data, in the RMS limit accuracy of 5%.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.14 no.3
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• pp.280-292
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• 1989

In this paper, the error rate equations of digitally modulated signals transmitted through the channel which is not only Gaussian/Impulsive noise but also multi-path fading have been derived. Using the derived equations for the error probabilities of ASK, QAM, CPSK, DPSK, FSK, and MSK signals, the error rate performances of digital modulation systems have been evaluated and represented in the graphs as the functions of CNR, Impulsive indes, the ratio of Gaussian noise power component to Impulsive noise power component, and fading figures. The results show that, in the deep fading environment, the error is occurred more frequency by Gaussian noise than Impulsive noise. And the comparison of various systems certifies that PSK is superior to the ohter systems in the deep fading or shallow fading environment.

• Proceedings of the Computational Structural Engineering Institute Conference
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• 2011.04a
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• pp.768-772
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• 2011

본 논문에서는 켤레구배법을 이용해 전체-국부 확장함수를 지닌 일반유한요소법을 해석하는 방식을 제안한다. 이 기법은 편미분방정식의 해에 대한 정보가 충분하지 않은 경우에도 수치해석적인 방법으로 일반 유한요소법의 확장함수를 구성할 수 있으며 해석 과정 중 추가의 계산 없이 좋은 성능을 지닌 전처리값 및 초기 추측치를 활용할 수 있어 국부적으로 복잡한 거동을 보이는 문제의 해석에 유리하다. 본 논문에 포함된 수치해석 예제의 결과는 제안된 기법이 가우스 소거법과 같은 직접 솔버를 이용하는 경우보다 수치 해석적으로 더 효율적임을 보여준다.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.05a
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• pp.693-695
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• 2012

This paper have presented the breakdown voltage for double gate(DG) MOSFET. The analytical solution of Poisson's equation and Fulop's breakdown condition have been used to analyze for breakdown voltage. The double gate(DG) MOSFET as the device to be able to use until nano scale has the adventage to reduce the short channel effects. But we need the study for the breakdown voltage of DGMOSFET since the decrease of the breakdown voltage is unavoidable. To approximate with experimental values, we have used the Gaussian function as charge distribution for Poisson's equation, and the change of breakdown voltage has been observed for device geometry. Since this potential model has been verified in the previous papers, we have used this model to analyze the breakdown voltage. As a result to observe the breakdown voltage, the smaller channel length and the higher doping concentration become, the smaller the breakdown voltage becomes. Also we have observed the change od the breakdown voltage for gate oxide thickness and channel thickness.