• Title/Summary/Keyword: 가시광선 조사

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Physical Properties of ZnO Thin Films Grown by Sol-Gel Process with Different Preheating Temperatures (예열 온도 변화에 따른 Sol-Gel 법에 의해 제작된 ZnO 박막의 물리적 특성 연구)

  • 김익주;한호철;이충선;송용진;태원필;서수정;김용성
    • Journal of the Korean Ceramic Society
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    • v.41 no.2
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    • pp.136-142
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    • 2004
  • A homogeneous and stable ZnO sol was prepared by dissolving the zinc acetate dihydrate(Zn(CH$_3$COO)$_2$$.$2H$_2$O) in solution of isopropanol((CH$_3$)$_2$$.$CHOH) and monoethanolamine(MEA:H$_2$NCH$_2$CH$_2$OH). ZnO thin films were prepared by sol-gel spin-coating method and investigated for c-axis preferred orientation and physical properties with preheating temperature. The c-axis growth had a difference as increaing preheating temperature. ZnO thin film preheated at 275$^{\circ}C$ and post-heated at 650$^{\circ}C$ was highly oriented along the (002) plane. After preheating at 200∼300$^{\circ}C$ and post-heating at 650$^{\circ}C$, the transmittance of ZnO thin films by UV-vis. measurement was over 85% in visible range and exhibited absorption edges at about 370 nm. The optical band gap energy was obtained about 3.22 eV, The photoluminescence emission characteristics of ZnO thin film preheated at 275$^{\circ}C$ and post-heated at 650$^{\circ}C$ was found to orange emission(620 nm, 2.0 eV) by PL measurement, which revealed the possibility for application of inorganic photoluminescence device.

The properties of Al-doped ZnO films deposited with RF magnetron sputtering system in various H2/(Ar + H2) gas ratios (RF 마그네트론 스퍼터링 방법을 사용해 증착된 Al이 도핑 된 ZnO 박막의 H2/(Ar + H2) 가스 비율에 따른 특성)

  • Kim, Jwa-Yeon;Han, Jung-Su
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.22 no.3
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    • pp.122-126
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    • 2012
  • The properties of Al-doped ZnO (AZO) films were investigated as a function of $H_2/(Ar+H_2)$ gas ratio using an AZO (2 wt% $Al_2O_3$) ceramic target in a radio frequency (RF) magnetron sputtering system. The deposition process was done at $200^{\circ}C$ and in $2{\times}10^{-2}$ Torr working pressure and with various ratios of $H_2/(Ar+H_2)$ gas. During the AZO film deposition process, partial $H_2$ gas affected the AZO film characteristics. The electron resistivity (${\sim}9.21{\times}10^{-4}\;{\Omega}cm$) was lowest and mobility (${\sim}17.8\;cm^2/Vs$) was highest in AZO films when the $H_2/(Ar+H_2)$ gas ratio was 2.5 %. When the $H_2/(Ar+H_2)$ gas ratio was increased above 2.5 %, the electron resistivity increased and mobility decreased with increasing $H_2/(Ar+H_2)$ gas ratio in AZO films. The carrier concentration increased with increasing $H_2/(Ar+H_2)$ gas ratio from 0 % to 7.5 %. This phenomenon was explained by reaction of hydrogen and oxygen and additional formation of oxygen vacancy. The average optical transmission in the visible light wavelength region over 90 % and an orientation of the deposition was [002] orientation for AZO films grown with all $H_2/(Ar+H_2)$ gas ratios.

청색과 녹색 GaN계 LED 및 LD소자를 이용한 자발 발광 시 효율 감소 현상에 대한 연구

  • Jeong, Gyu-Jae;Lee, Jae-Hwan;Han, Sang-Hyeon;Lee, Seong-Nam
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.311-311
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    • 2014
  • III-N계 물질로 이루어진 GaN 기반의 광 반도체는 직접 천이형 넓은 밴드갭 구조를 갖고 있기 때문에 적외선부터 가시광선 및 자외선까지를 포함한 폭 넓은 발광파장 조절이 가능하여 조명 및 디스플레이 관련 차세대 광원으로 많은 관심을 받고 있다. 하지만, GaN기반의 발광 다이오드는 많은 연구기관들의 오랜 연구에도 불구하고 고출력을 내는데 있어 여전히 많은 문제들이 존재한다. 그 중, 주입전류 증가에 따른 효율감소 현상은 출력을 저해하는 대표적인 요소로 알려져 있는데, 이전의 연구 결과에서 알려진 효율감소 현상의 원인으로 결정결함에 의한 누설전류, Auger 재결합, 이송자 넘침 현상 그리고 p-n접합부의 온도 상승 등의 현상이 알려져 있다 [1-2]. 하지만 여전히 주입 전류 증가에 따른 효율 감소 현상의 원인에 대해 명확한 해답은 없으며 아직도 많은 논의가 이루어 지고 있다. 따라서, 본 연구에서는 GaN기반의 청색 및 녹색 LD와 LED소자를 이용하여 주입전류 밀도의 변화에 따른 자발 발광 영역에서의 효율감소 현상의 원인을 규명하고 한다. 유기금속화학증착법(MOCVD)를 이용하여 c면 사파이어 위에 서로 다른 발광파장을 가지는 InGaN/GaN 다중양자우물구조의 질화물계 LED와 LD 박막을 제작하였으며 성장 구조에 의한 특성으로 인해 발생하는 효율 저하 현상을 방지하고자 InGaN/GaN으로 이루어진 다중양자우물층의 조성만 제어하여 청색과 녹색으로 발광하도록 하였다. 청색 및 녹색 LD 웨이퍼들을 이용하여 주입전류 증가에 따른 발광특성을 조사하기 위해 LD와 LED는 표준 팹 공정에 의해 제작되었다. 전계 발광 측정을 위해 상온에서 직류 전류를 주입하여 GaN계 청색 및 녹색 LED와 LD에 각 5 mA/cm2에서 50 mA/cm2까지 전류밀도를 증가시킴에 따라 LD 및 LED칩 형태에 상관없이 청색 LD와 LED의 파장은 약 465nm에서 약 458nm로 감소하였고 녹색 LD와 LED의 파장은 약 521nm에서 약 511~513 nm까지 단파장화가 발생했다. 이는 동일한 웨이퍼에 동일한 전류 밀도를 주입하였기 때문에 발생하는 것으로 판단된다. 그러나, 청색 LED의 효율은 50 mA/cm2에서 약 70%정도로 감소하고 반면 녹색 LED의 경우 동일한 전류밀도 하에 약 52%정도로 감소하였지만, 청색과 녹색 LD의 경우 동일한 전류 밀도의 범위 내에서 더욱 낮은 효율저하 현상을 나타내었다. 또한, 접합 온도를 측정한 바 청색소자가 녹색 소자에 비하여 낮은 접합 온도를 나타낼 뿐아니라, 청색 및 녹색 LD의 경우 LED 보다 낮은 접합 온도를 나타내고 있었다. 이는 InGaN 활성층의 In 조성이 증가할수록 비발광 센터에 의한 접합온도 상승 뿐 아니라, LD ridge 구조에서 더 많은 열이 방출되어 접합 온도가 감소될 수 있는 것으로 판단된다. 우리는 동일한 웨이퍼에 LED와 LD를 제작하였고, 동일한 전류 주입밀도를 인가하였기 때문에 LD와 LED의 효율 감소 현상의 차이는 이송자 넘침 현상, 결정 결함, 오제 재결합 등이 원인보다 활성층의 접합 온도 상승이 가장 큰 영향이 될 수 있을 것으로 판단된다.

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Isolation and Characterization of Aspergillus nidulans Mutants Which Undergo Sexual Development in Light Exposure (빛의 존재하에서도 유성분화를 하는 Aspergillus nidulans의 돌연변이체 분리 및 분석)

  • Min, Jung-Youl;Kim, Hye-Ryun;Han, Kap-Hoon;Han, Dong-Min
    • Korean Journal of Microbiology
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    • v.43 no.2
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    • pp.77-82
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    • 2007
  • In a homothallic ascomycete Aspergillus nidulans, sexual development is inhibited by various environmental stresses such as acetate medium, visible light and high osmolarity conditions. In order to study the genes involved in this stress-related regulatory network, we first attempted to isolate mutants that could develop cleistothecia even in the presence of any of those stresses including intensive visible light. More than 10,000 mutants were screened and 167 mutants were analyzed. Among them, 152 mutants underwent sexual development under the single stress condition of either high osmotic, high acetate or light condition but no sexual development in more than two stresses. Six mutants can produce cleistothecia under light or acetate stress but not in salt stress. Moreover, 6 mutants showed the ability to develop cleistothecia under the light but not under the acetate or osmo-stress. The mutants were revealed to have independent single gene mutation and grouped into different complementation groups (silA-F). The mutant alleles were all recessive to that of wild type. The light responsiveness of development implies the existence of delicate regulation process including reception and translocation of light signaling and determination of development.

Mechanistic Studies for Electrochemical Oxidation of ${\iota}$-Sparteine (${\iota}$-Sparteine의 전기화학적 산화반응에 대한 메카니즘의 연구)

  • Jin-Hyo Park;Chang-Soo Jin;Sung-Nak Choi;Yoon-Bo Shim
    • Journal of the Korean Chemical Society
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    • v.37 no.8
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    • pp.711-716
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    • 1993
  • The mechanism for electrochemical oxidation of natural alkaloid, ${\iota}$-sparteine (SP) was studied in acetonitrile solvent. The cyclic voltammogram of SP shows two irreversible anodic peaks at +0.75 V and +1.45 V vs. Ag/AgCl (0.1M AgNO$_2$ in acetonitrile) electrode. Coulometry reveals that the number of electrons involved in each oxidation peaks is in the range of 1.2∼1.3 respectively. Neutral imine radical was produced by fast deprotonation of SP radical cation formed by oxidation of one nitrogen atom in SP. Two pathways are possible for the reaction of the neutral radical: Due to the disproportionation of the radical, SP and enamine were mainly produced. Also, the 1,2-dehydrosparteinium cation was formed as minor product through the second one electron transfer oxidation of this radical. The (+)-lupanine was produced by treatment of sparteinium cation with potassium hydroxide. We have isolated and confirmed the electrolysis products using IR, GC-MS, UV-Vis, and thin-layer spectroelectrochemical method.

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The Photoluminance Properties of Blue Phosphor with Chemical Composition in BaO-MgO-$Al_2O_3$ System (BaO-MgO-$Al_2O_3$계에서 조성변화에 따른 청색 형광체의 발광특성)

  • Park, Sang-Hyun;Kong, Myung-Sun;Lee, Rhim-Youl
    • Korean Journal of Materials Research
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    • v.8 no.6
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    • pp.520-525
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    • 1998
  • The optical properties with chemical composition change in BaO- MgO-$AI_2O_3$, system activated by divalent Eu ion were investigated under 254nm ultraviolet(UV) and 147nm vacuum ultraviolet(VUV). These phosphors emitted a blue light at a dominant wavelength of $\lambda$=445nm under UV and VUV irradiations. It was found that the brightness of $BaMgAI_{14}O_{23}$ phosphor increased with Eu concentration up to 10% under UV but it showed a maximum emitting intensity at 5% Eu for VUV. The emitting intensity of blue color of $BaMgAl_{10}O_{l7}$ phosphor was higher than that of $BaMgAI_{14}O_{23}$for both excitation. A further improvement in brightness was obtained for $Ba_{o.9}Ca_{0.1}MaAl_{14}O_{23}$ and $Ba_{0.9}Sr_{0.1}MgAl_{10}O_{17}$ phosphor synthesized by the substition of $Ba^{+2}$ ion with O.lmole of $Ca^{+2}$ or $Sr^{+2}$ ions in $BaMgAl_{IO}O_{17}$: Eu phosphor.

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Characteristics of TiO2 and Ag/TiO2 optical thin film by Co-sputtering method (동시 스퍼터링법에 이용하여 제작한 TiO2와 Ag/TiO2 광학 박막의 특성)

  • Kim, Sang-Cheol;Hahn, Sung-Hong;Kim, Eui-Jung;Lee, Chung-Woo;Joo, Jong-Hyun;Kim, Goo-Cheol
    • Korean Journal of Optics and Photonics
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    • v.16 no.2
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    • pp.168-173
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    • 2005
  • Ag-doped $TiO_2$ thin films were prepared by RF magnetron co-sputtering method, and their physical and chemical properties were examined as a function of calcination temperature. XRD results showed that the crystallite size of Ag-doped films was smaller than that of the $TiO_2$ thin films. SEM results showed that the particle size of $Ag/TiO_2$ film was smaller and more uniform than pure $TiO_2$ film. The films had high transparency in the visible range. The films calcined at $600^{\circ}C$ were the anatase phase, and the films calcined at $900^{\circ}C$ were a mixture of anatase and rutile phases. The absorption edge of films calcined at $900^{\circ}C$ was red-shifted. This is due to the augmented absorption resulting from the phase transformation from anatase to rutile phase. And the transmittance of films decreased by the light scattering and absorption in the films. Photocatalytic activity of $Ag/TiO_2$ thin films was higher than that of the pure $TiO_2$ thin films.

Design and deposition of two-layer antireflection and antistatic coatings using a TiN thin film (TiN 박막을 이용한 2층 무반사 코팅의 설계 및 층착)

  • 황보창권
    • Korean Journal of Optics and Photonics
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    • v.11 no.5
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    • pp.323-329
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    • 2000
  • In this study we have calculated an ideal complex refractive index of a TiN trim used in a layer of anl1reilecnon (I\R) coatmg, [air$ISiO_2ITiNIglass$] in the visible. Also we simulated the rellectance of lwo-layer AR coating by varying the thicknesses of TiN and $SiO_2$ layers, respecl1vely. The simolation results show that we can controllhe lowest reflectance and AR band of tile AR coating. The TIN fihns were fabricated by a RF magnetron sputtering apparalus. The chemical, structural and electrical properties of TiN fih11S were inveshgated by the Rutherford backscattering spech'oscopy (RBS), atomic force microscope (AFM) and 4-point probe. The optical properlies were inve,tigated by the spectrophotometer and vanable angle spectroscopic ellipsometer (VASE). The smface roughness of TiN flhns \vas $9~10\AA$. TIle resistivity of TiN films was TEX>$360~730\mu$\Omega $ cm. The ,toichlOllletry of TiN film was 1'1: O:N = I: 0.65 :0.95 and ilic oxygen wa~ found on ilie smface. With these experimental and simu]al1on resulLs, we deposited duo: two-layer AR coating, [air$ISiO_2ITiNIglass$] and the refleClance was under 0.5% ill the regIOn of 440-650 run. 0 run.

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Photochromic Properties of Cellulose Derivatives Having Spirobenzopyran Group (스피로벤조피란을 포함하는 셀룰로오스 유도체의 광변색 특성)

  • Xiangdan, Li;Kim, Eun-Kyoung;Lee, Myong-Hoon
    • Polymer(Korea)
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    • v.29 no.1
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    • pp.25-31
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    • 2005
  • Cellulose acetate derivatives containing 6-(p-hexyloxyphenyl)carbonyl spirobenzopyran (CA-COSP) were prepared from base-catalyzed etherification of cellulose acetate, and their physical and photochromic properties were characterized. The degree of substitution of COSP was calculated from the amount of residual hydroxyl groups in cellulose acetate measured by the $^1H$-NMR and UV spectrometric data. It was ranging from 0.87 to 45.5% depending on the reaction condition. UV/vis spectrometry of the resulting CA-COSP revealed that the polymer shows a reversible color change by changing its color from colorless to blue upon UV irradiation forming a merocyanine structure, and returning back again to colorless spiropyran structure by visible light or by heat. The rate of color change was faster in solution than in the film. In the more polar solvent, the more stable was the resulting merocyanine, and the slower was the rate of reverse reaction to spiropyran. Compared to COSP blended with cellulose acetate, in which a phase separation was observed for samples containing more than 0.9 wt% of COSP, up to 48 wt% of COSP could be blended in CA-COSP without phase separation.

ECR-PECVD 방법으로 제작된 DLC 박막의 기판 Bias 전압 효과

  • 손영호;정우철;강종석;정재인;황도원;김인수;배인호
    • Proceedings of the Korean Vacuum Society Conference
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    • 2000.02a
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    • pp.188-188
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    • 2000
  • DLC (Diamond-Like Carbon) 박막은 높은 경도와 가시광선 및 적외선 영역에서의 광 투과도, 전기적 절연성, 화학적 안정성 및 저마찰.내마모 특성 등의 우수한 물리.화학적인 물성을 갖고 있기 때문에 여러 분야의 응용연구가 이루어지고 있다. 이러한 DLC 박막을 제작하는 과정에는 여러 가지가 있으나, 본 연구에서는 ECR-PECVD electron cyclotron resonance plasma enhanced chemical vapor deposition) 방법을 사용하였다. 이것은 최근에 많이 이용되고 있는 방법으로, 이온화률이 높을뿐만 아니라 상온에서도 성막이 가능하고 넓은 진공도 영역에서 플라즈마 공정이 가능한 장점이 있다. 기판으로는 4" 크기의 S(100)를 사용하였고, 박막을 제작하기 전에 진공 중에서 플라즈마 전처리를 하였다. 플라즈마 전처리는 Ar 가스를 150SCCM 주입시켜 5$\times$10-1 torr 의 진공도를 유지시키면서, ECR power를 700W로 고정하고, 기판 bias 전압을 -300 V로 하여 5분 동안 기판을 청정하였다. DLC 박막은 ECR power를 700W. 가스혼합비와 유량을 CH4/H2 : 10/100 SCCM, 증착시간을 2시간으로 고정하고, 기판 bias 전압을 0, -50, -75, -100, -150, -200V로 변화시켜가면서 제작하였다. 이때 ECR 소스로부터 기판까지의 거리는 150mm로 하였고, 진공도는 2$\times$10-2torr 였으며, 기판 bias 전압은 기판에 13.56 MHz의 RF power를 연결하여 RF power에 의해서 유도되는 negative DC self bias 전압을 이용하였다. 제작된 박막을 Auger electron spectroscopy, elastic recoil detection, Rutherford backscattering spectroscopy, X-ray diffraction, secondary electron microscopy, atomic force microscoy, $\alpha$-step, Raman scattering spectroscopu, Fourier transform infrared spectroscopy 및 micro hardness tester를 이용하여 기판 bias 전압이 DLC 박막의 특성에 미치는 영향을 조사하였다. 분석결과 본 연구에서 제작된 DLC 박막은 탄소와 수소만으로 구성되어 있으며, 비정질 상태임을 알 수 있었다. 기판 bias 전압의 증가에 따라 박막의 두께가 감소됨을 알 수 있었고, -150V에서는 박막이 거의 만들어지지 않았으며, -200V에서는 기판 표면이 식각되었다. 이것은 기판 bias 전압과 ECR 플라즈마에 의한 이온충돌 효과 때문으로 판단되며, 150V 이하에서는 증착되는 양보다 re-sputtering 되는 양이 더 많을 것으로 생각된다. 기판 bias 전압을 증가시킬수록 플라즈마에 의한 이온충돌 현상이 두드러져 탄소와 결합하고 있던 수소원자들이 떨어져 나가는 탈수소화 (dehydrogenation) 현상을 확인할 수 있었으며, 이것은 C-H 결합에너지가 C-C 결합이나 C=C 결합보다 약하여 수소 원자가 비교적 해리가 잘되므로 이러한 현상이 일어난다고 판단된다. 결합이 끊어진 탄소 원자들은 다른 탄소원자들과 결합하여 3차원적 cross-link를 형성시켜 나가면서 내부 압축응력을 증가시키는 것으로 알려져 있으며, hardness 시험 결과로 이것을 확인할 수 있었다. 그리고 표면거칠기는 기판 bias 전압을 증가시킬수록 더 smooth 해짐을 확인하였다.인하였다.

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