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http://dx.doi.org/10.4191/KCERS.2004.41.2.136

Physical Properties of ZnO Thin Films Grown by Sol-Gel Process with Different Preheating Temperatures  

김익주 (LG 생산기술원)
한호철 (성균관대학교 정보통신용 신기능성 소재 및 공정연구센터)
이충선 (아주대학교 물리학과)
송용진 (아주대학교 물리학과)
태원필 (인하대학교 소재연구소)
서수정 (성균관대학교 정보통신용 신기능성 소재 및 공정연구센터)
김용성 (성균관대학교 정보통신용 신기능성 소재 및 공정연구센터)
Publication Information
Abstract
A homogeneous and stable ZnO sol was prepared by dissolving the zinc acetate dihydrate(Zn(CH$_3$COO)$_2$$.$2H$_2$O) in solution of isopropanol((CH$_3$)$_2$$.$CHOH) and monoethanolamine(MEA:H$_2$NCH$_2$CH$_2$OH). ZnO thin films were prepared by sol-gel spin-coating method and investigated for c-axis preferred orientation and physical properties with preheating temperature. The c-axis growth had a difference as increaing preheating temperature. ZnO thin film preheated at 275$^{\circ}C$ and post-heated at 650$^{\circ}C$ was highly oriented along the (002) plane. After preheating at 200∼300$^{\circ}C$ and post-heating at 650$^{\circ}C$, the transmittance of ZnO thin films by UV-vis. measurement was over 85% in visible range and exhibited absorption edges at about 370 nm. The optical band gap energy was obtained about 3.22 eV, The photoluminescence emission characteristics of ZnO thin film preheated at 275$^{\circ}C$ and post-heated at 650$^{\circ}C$ was found to orange emission(620 nm, 2.0 eV) by PL measurement, which revealed the possibility for application of inorganic photoluminescence device.
Keywords
Zinc oxide; Sol-gel process; Thin films; Photoluminescence;
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
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