• Korean Journal of Materials Research
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• v.25 no.10
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• pp.543-546
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• 2015

$TiO_2$ nanowires were grown by thermal oxidation of TiO powder in an oxygen and nitrogen gas environment at $1000^{\circ}C$. The ratio of $O_2$ to $N_2$ in an ambient gas was changed to investigate the effect of the gas ratio on the growth of $TiO_2$nanowires. The oxidation process was carried out at different $O_2$/$N_2$ ratios of 0/100, 25/75, 50/50 and 100/0. No nanowires were formed at $O_2$/$N_2$ ratios of less than 25/75. When the $O_2$/$N_2$ ratio was 50/50, nanowires started to form. As the gas ratio increased to 100/0, the diameter and length of the nanowires increased. The X-ray diffraction pattern showed that the nanowires were $TiO_2$ with a rutile crystallographic structure. In the XRD pattern, no peaks from the anatase and brookite structures of $TiO_2$were observed. The diameter of the nanowires decreased along the growth direction, and no catalytic particles were detected at the tips of the nanowires which suggests that the nanowires were grown with a vapor-solid growth mechanism.

• Journal of the Korean Ceramic Society
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• v.38 no.11
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• pp.1037-1041
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• 2001

Silicon diosixde thick film using silica optical waveguide cladding was fabricated by Plasma Enhanced Chemical Vapor Deposition (PECVD) method, at a low temperature (32$0^{\circ}C$) and from (SiH$_4$+$N_2$O) gas mixtures. The effects of deposition parameters on properties of SiO$_2$thick films were investigated by variation of $N_2$O/SiH$_4$flow ratio and RF power. As the $N_2$O/SiH$_4$flow ratio decreased, deposition rate increased from 2.9${\mu}{\textrm}{m}$/h to maximum 10.1${\mu}{\textrm}{m}$/h. As the RF power increased from 60 W to 120 W, deposition rate increased (5.2~6.7 ${\mu}{\textrm}{m}$/h) and refractive index approached at thermally grown silicon dioxide (n=1.46).

• Journal of the Korea Institute of Information and Communication Engineering
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• v.3 no.2
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• pp.471-475
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• 1999

The metal plasma-etch damage immunity of nMOSFET with $N{_2}O$ gate oxide is found to be improved comparing to that with regular pure oxide of similar thickness. With increasing the antenna ratio (AR), the characteristics of nMOSFETs with $N{_2}O$ oxide shows tighter initial distribution and smaller degradation under constant field stress, which is explained by the effect of the nitrogen at the substrate $Si/SiO_2$ interface. Also, if $N{_2}O$ gate oxide is used, the maximum allowable size of metal AAR and PAR may be increased to the much larger values. These improvements of nMOSFETs with $N{_2}O$ gate oxide are attributed to the effect of the interface hardness improved by the nitrogen included at the substrate-Si/$N{_2}O$-oxide interface.

• Journal of the Korean Ceramic Society
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• v.26 no.1
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• pp.31-36
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• 1989

In order to synthesize AlN-polytypes from AlN-SiO2-Al2O3 system, composition A (AlN/SiO2/Al2O3=1/0.3/0.05, mole ratio) and composition B(AlN-SiO2-Al2O3=1/0.2/0.05, mole ratio) were used. AlN-polytypes were produced by nitriding the mixture at 175$0^{\circ}C$~190$0^{\circ}C$ under N2 atmosphere. For lower reaction temperature, 15R phase was produced and in the case of higher reaction temperature, AlN phase was only produced. As each composition was heated at 185$0^{\circ}C$ in N2 atmosphere, produced main phases were 15R phase for composition A and 21R phase for composition B respectively. The fracture surfaces of produced reactants showed porous skeleton structure.

• Journal of the Korean Ceramic Society
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• v.38 no.12
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• pp.1150-1154
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• 2001

Silicon oxynitride (SiON) thick films using the core layer of silica optical waveguide have been deposited on Si wafer by PECVD at low temperature (32$0^{\circ}C$) were obtained by decomposition of appropriate mixture of (SiH$_4$+$N_2$O+$N_2$) gaseous mixtures under RF power and SiH$_4$/($N_2$O+$N_2$) ratio deposition condition. Prism coupler measurements show that the refractive indices of SiON layers range from 1.4663 to 1.5496. A high SiH$_4$/($N_2$O+$N_2$) of 0.33 and deposition power of 150 W leads to deposition rates of up to 8.67 ${\mu}{\textrm}{m}$/h. With decreasing SiH$_4$/($N_2$O+$N_2$) ratio, the SiON layer become smooth from 41$\AA$ to 6$\AA$.

• Journal of Industrial Technology
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• v.31 no.B
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• pp.119-125
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• 2011

N-doped Titanium oxides were prepared by using urea as a source of nitrogen. The photoactivities of the doped $TiO_2$ were evaluated on the basis of degradation of humic acid in aqueous solutions with different light sources, ultraviolet lamp, fluorescent lamp and solar light. XRD analysis was conducted to identify the crystal structure of the synthesized photocatalysts. N-doped $TiO_2$ and $pure-TiO_2$ was anatase type. SEM results showed that spherical particles were formed, which are the characteristics of the anatase form. N doped $TiO_2$ showed higher $UV_{254}$ decrease ratio and DOC removal ratio compared to $pure-TiO_2$. The humic acid degradation reaction using the UV-A lamp and UV-C lamp was assigned to pseudo-first order reaction. For solar light, only $pure-TiO_2$ and $N-TiO_2$ exhibited the pseudo-first order reaction.

• Journal of the Semiconductor & Display Technology
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• v.22 no.2
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• pp.35-39
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• 2023

Silicon oxide thin films have been deposited by plasma-enhanced chemical vapor deposition in SiH4 and N2O plasma along the variation of the gas flow ratio. Optical emission spectroscopy was employed to monitor the plasma and ellipsometry was employed to obtain refractive index of the deposited thin film. The atomic ratio of Si, O, and N in the film was obtained using XPS depth profiling. Fourier Transform Infrared Spectroscopy was used to analyze structures of the films. RI decreased with the increase in N2O/SiH4 gas flow ratio. We noticed the increase in the Si-O-Si bond angles as the N2O/SiH4 gas flow ratio increased, according to the analysis of the Si-O-Si stretching peak between 950 and 1,150 cm-1 in the wavenumber. We observed a correlation between the optical emission intensity ratio of (ISi+ISiH)/IO. The OES intensity ratio is also related with the measured refractive index and chemical composition ratio of the deposited thin film. Therefore, we report the added value of OES data analysis from the plasma related to the thin film characteristics in the PECVD process.

• Journal of Environmental Health Sciences
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• v.29 no.1
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• pp.62-66
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• 2003

The biological denitrification batch tests were conducted to optimize the operating conditions with various temperature and initial SCO $D_{Cr}$ /N $O_3$-N ratio. and the denitrification rates were analyzed various SCO $D_{Cr}$ /N $o_3$-N ratio of influent with swine wastes fermented and temperature. The finishing time of denitrification was within 15 hours, 12 hours, and 6 hours as the temperature of denitrification applied were 15$\pm$1$^{\circ}C$, 25$\pm$1$^{\circ}C$, and 31$\pm$1$^{\circ}C$, respectively. From the batch tests, denitrification rate was operated with over 3 of SCO $D_{Cr}$ /N $O_3$-N ratio. Denitrification rate was increased as the temperature of denitrification, increased such as 2.40-3.90 mg N $O_3$-N/gMLVSSㆍhr, 6.10-7.60 mgN $O_3$-N/gMLVSSㆍhr, and 14.40-15.88 mgN $O_3$-N/gMLVSSㆍhr, respectively. The denitrification rate was increased as the ratio of initial SCO $D_{Cr}$ N $O_3$-N increased. However, it was found that the suitable ratio of SCO $D_{Cr}$ /N $O_3$-N for denitrification should be considered because the ratio of mg SCO $D_{Cr}$ , consumed per mg N $O_3$-N removed varied depend on the influent SCO $D_{Cr}$ /TKN ratios.

• Journal of Power System Engineering
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• v.19 no.3
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• pp.16-21
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• 2015

Nitrous oxide($N_2O$) concentration in the atmosphere has been constantly increased by the human activities with industrial growth after the industrial revolution. One of factors to increase $N_2O$ concentration in the atmosphere is the $N_2O$ emission caused by the combustion of marine fuel. Especially, a sulfur component included in marine fuel oils is known as increasing the $N_2O$ formation in diesel combustion. Form this point of view, $N_2O$ emission from a ship is not negligible. On the other hand, Exhaust gas recirculation(EGR) that have thermal, chemical and dilution effect is effective method for reducing the NOx emission. In this study, an author investigated $N_2O$ reduction by using EGR on a direct injection diesel engine. The test engine was a 4-stroke diesel engine with maximum output of 12 kW at 2600rpm, and operating condition of the engine was a fixed load of 75%. The experimental oil was a blend-fuel that were adjusted with sulfur ratio of 3.5%, and EGR ratio of 0%, 10%, 20% and 30%. In conclusion, diesel fuel that contained 3.5% sulfur component increased $SO_2$ emission in exhaust gas, and increment of EGR ratio reduced NO emission. Moreover, $N_2O$ emission was decreased as over 50% at EGR ratio of 10% and reduced 100% at EGR ratio of 30% compared with $N_2O$ emission of 0% EGR ratio.

• Electrical & Electronic Materials
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• v.9 no.9
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• pp.906-910
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• 1996

Ferroxplana N $i_{2}$Y(B $a_{2}$N $i_{2}$F $e_{12}$ $O_{22}$ ) magnetic particles, which is one of the hexagonal ferrite were synthesized by a coprecipitation method. The coprecipitates were prepared by adding aqueous solution of BaC $I_{2}$ - 2 $H_{2}$O, NiC $I_{2}$ - 6 $H_{2}$O and FeC $I_{3}$ - 6 $H_{2}$O(of which the mole ratio is $Ba^{+2}$ : N $i^{+2}$ : F $e^{3+}$= 1 : 1 : 6) to a mixture of NaOH and N $a_{2}$C $O_{3}$. The shape of Ferroxplana N $i_{2}$Y magnetic particles obtained at 1, 100(.deg. C) was hexagonal plate-like, average particle size and aspect ratio were 2(.mu.m) and 7, respectively.y.