• 제목/요약/키워드: [O]/[$N_2$] ratio

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열 산화를 이용한 TiO2 나노선의 성장에 미치는 O2/N2 가스비의 영향 (Effect of the O2/N2 Ratio on the Growth of TiO2 Nanowires via Thermal Oxidation)

  • 이근형
    • 한국재료학회지
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    • 제25권10호
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    • pp.543-546
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    • 2015
  • $TiO_2$ nanowires were grown by thermal oxidation of TiO powder in an oxygen and nitrogen gas environment at $1000^{\circ}C$. The ratio of $O_2$ to $N_2$ in an ambient gas was changed to investigate the effect of the gas ratio on the growth of $TiO_2$nanowires. The oxidation process was carried out at different $O_2$/$N_2$ ratios of 0/100, 25/75, 50/50 and 100/0. No nanowires were formed at $O_2$/$N_2$ ratios of less than 25/75. When the $O_2$/$N_2$ ratio was 50/50, nanowires started to form. As the gas ratio increased to 100/0, the diameter and length of the nanowires increased. The X-ray diffraction pattern showed that the nanowires were $TiO_2$ with a rutile crystallographic structure. In the XRD pattern, no peaks from the anatase and brookite structures of $TiO_2$were observed. The diameter of the nanowires decreased along the growth direction, and no catalytic particles were detected at the tips of the nanowires which suggests that the nanowires were grown with a vapor-solid growth mechanism.

PECVD법에 의해 증착된 $SiO_2$후막 특성에서 $N_2O$/$SiH_4$Flow Ratio와 RF Power가 미치는 영향 (Effects of $N_2O$/$SiH_4$Flow Ratio and RF Power on Properties of $SiO_2$Thick Films Deposited by Plasma Enhanced Chemical Vapor Deposition)

  • 조성민;김용탁;서용곤;임영민;윤대호
    • 한국세라믹학회지
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    • 제38권11호
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    • pp.1037-1041
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    • 2001
  • 저온(32$0^{\circ}C$)에서 SiH$_4$$N_2$O 가스의 혼합을 통해 플라즈마화학기상증착(PECVD)법을 이용하여 실리카 광도파로의 클래딩막으로 사용되는 SiO$_2$후막을 제조하였다. 증착변수가 SiO$_2$후막의 특성에 미치는 영향을 살펴보기 위해 $N_2$O/SiH$_4$flow ratio와 RF power에 변화를 주었다. $N_2$O/SiH$_4$ flow ratio가 감소함에 따라 증착속도는 2.9 $mu extrm{m}$/h), 굴절률은 thermal oxide의 굴절률(n=1.46)에 근접하였다.

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게이트 산화막에 따른 nMOSFET의 금속 플라즈마 피해 (Metal Plasma-Etching Damages of NMOSFETs with Pure and $N{_2}O$ Gate Oxides)

  • Jae-Seong Yoon;Chang-Wu Hur
    • 한국정보통신학회논문지
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    • 제3권2호
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    • pp.471-475
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    • 1999
  • $N{_2}O$ 게이트 산화막을 사용한 nMOSFET가 금속 플라즈마 식각 피해에 대한 면역도가 동일한 두께의 순수한 산화막을 갖는 nMOSFET보다 향상됨을 보여준다. Area Antenna Ratio(AAR)를 증가시킴에 따라 $N{_2}O$ 산화막을 갖는 nMOSFET는 좁은 초기 분포 특성과 정전계 스트레스하에서 더 작은 열화특성을 보이는 데 이는 Si기판과 산화막 계면에서의 질소기의 영향으로 설명되어진다. 또한 $N{_2}O$ 게이트 산화막을 사용하면 순수한 게이트 산화막을 사용할 때 보다 금속 Area Antenna Ratio(AAR)과 Perimeter Area ratio(PAR) 의 최대 허용 크기를 더 증가할 수 있다. 이러한 $N{_2}O$ 게이트 산화막을 갖는 NMOSFET의 개선은 Si기판과 $N{_2}O$ 산화막 계면에 있는 질소기에 의한 계면 강도의 영향 때문으로 판단된다.

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AlN-SiO2-Al2O3계로부터 AlN-Polytypes의 제조 (Synthesis of AlN-SiO2-Al2O3 System)

  • 박용갑;장병국
    • 한국세라믹학회지
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    • 제26권1호
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    • pp.31-36
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    • 1989
  • In order to synthesize AlN-polytypes from AlN-SiO2-Al2O3 system, composition A (AlN/SiO2/Al2O3=1/0.3/0.05, mole ratio) and composition B(AlN-SiO2-Al2O3=1/0.2/0.05, mole ratio) were used. AlN-polytypes were produced by nitriding the mixture at 175$0^{\circ}C$~190$0^{\circ}C$ under N2 atmosphere. For lower reaction temperature, 15R phase was produced and in the case of higher reaction temperature, AlN phase was only produced. As each composition was heated at 185$0^{\circ}C$ in N2 atmosphere, produced main phases were 15R phase for composition A and 21R phase for composition B respectively. The fracture surfaces of produced reactants showed porous skeleton structure.

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실리카 광도파로용 SiON 후막 특성에서 RF Power와 $SiH_4$/($N_2$O+$N_2$) Ratio가 미치는 영향 (The Effect of RF Power and $SiH_4$/($N_2$O+$N_2$) Ratio in Properties of SiON Thick Film for Silica Optical Waveguide)

  • 김용탁;조성민;서용곤;임영민;윤대호
    • 한국세라믹학회지
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    • 제38권12호
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    • pp.1150-1154
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    • 2001
  • 플라즈마 화학기상증착(PECVD)법을 이용하여 실리카 광도파막의 코어로 이용되는 규소질산화막(SiON)을 Si 웨이퍼 위에 SiH$_4$,$N_2$O, $N_2$가스를 혼합하여 저온(32$0^{\circ}C$)에서 증착하였다. Prism coupler 측정을 통해 SiON 굴절률 1.4663~1.5496을 얻었으며, SiH$_4$/($N_2$O+$N_2$) 유량비와 rf power가 각각 0.33과 150W에서 8.67$mu extrm{m}$/h의 증착률을 나타내었다. 또한 SiH$_4$/($N_2$O+$N_2$) 유량비가 감소함에 따라 SiON막의 roughness는 41~6$\AA$까지 감소하였다.

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질소를 도핑한 TiO2를 이용한 부식산 분해 (Degradation of Humic Acid Using N-Doped TiO2)

  • 소지양;이동석
    • 산업기술연구
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    • 제31권B호
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    • pp.119-125
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    • 2011
  • N-doped Titanium oxides were prepared by using urea as a source of nitrogen. The photoactivities of the doped $TiO_2$ were evaluated on the basis of degradation of humic acid in aqueous solutions with different light sources, ultraviolet lamp, fluorescent lamp and solar light. XRD analysis was conducted to identify the crystal structure of the synthesized photocatalysts. N-doped $TiO_2$ and $pure-TiO_2$ was anatase type. SEM results showed that spherical particles were formed, which are the characteristics of the anatase form. N doped $TiO_2$ showed higher $UV_{254}$ decrease ratio and DOC removal ratio compared to $pure-TiO_2$. The humic acid degradation reaction using the UV-A lamp and UV-C lamp was assigned to pseudo-first order reaction. For solar light, only $pure-TiO_2$ and $N-TiO_2$ exhibited the pseudo-first order reaction.

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Thin Film Characterization on Refractive Index of PECVD SiO2 Thin Films

  • Woo Hyuck Kong;In Cheon Yoon;Seung Jae Lee;Yun Jeong Choi;Sang Jeen Hong
    • 반도체디스플레이기술학회지
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    • 제22권2호
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    • pp.35-39
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    • 2023
  • Silicon oxide thin films have been deposited by plasma-enhanced chemical vapor deposition in SiH4 and N2O plasma along the variation of the gas flow ratio. Optical emission spectroscopy was employed to monitor the plasma and ellipsometry was employed to obtain refractive index of the deposited thin film. The atomic ratio of Si, O, and N in the film was obtained using XPS depth profiling. Fourier Transform Infrared Spectroscopy was used to analyze structures of the films. RI decreased with the increase in N2O/SiH4 gas flow ratio. We noticed the increase in the Si-O-Si bond angles as the N2O/SiH4 gas flow ratio increased, according to the analysis of the Si-O-Si stretching peak between 950 and 1,150 cm-1 in the wavenumber. We observed a correlation between the optical emission intensity ratio of (ISi+ISiH)/IO. The OES intensity ratio is also related with the measured refractive index and chemical composition ratio of the deposited thin film. Therefore, we report the added value of OES data analysis from the plasma related to the thin film characteristics in the PECVD process.

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무산소조에서 온도 및 초기 C/N비에 따른 축산폐수의 탈질특성 (Denitrifications of Swine Wastewater with Various Temperature and Initial CM Ratio in Anoxic Reactor)

  • 김민호;김복현
    • 한국환경보건학회지
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    • 제29권1호
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    • pp.62-66
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    • 2003
  • The biological denitrification batch tests were conducted to optimize the operating conditions with various temperature and initial SCO $D_{Cr}$ /N $O_3$-N ratio. and the denitrification rates were analyzed various SCO $D_{Cr}$ /N $o_3$-N ratio of influent with swine wastes fermented and temperature. The finishing time of denitrification was within 15 hours, 12 hours, and 6 hours as the temperature of denitrification applied were 15$\pm$1$^{\circ}C$, 25$\pm$1$^{\circ}C$, and 31$\pm$1$^{\circ}C$, respectively. From the batch tests, denitrification rate was operated with over 3 of SCO $D_{Cr}$ /N $O_3$-N ratio. Denitrification rate was increased as the temperature of denitrification, increased such as 2.40-3.90 mg N $O_3$-N/gMLVSSㆍhr, 6.10-7.60 mgN $O_3$-N/gMLVSSㆍhr, and 14.40-15.88 mgN $O_3$-N/gMLVSSㆍhr, respectively. The denitrification rate was increased as the ratio of initial SCO $D_{Cr}$ N $O_3$-N increased. However, it was found that the suitable ratio of SCO $D_{Cr}$ /N $O_3$-N for denitrification should be considered because the ratio of mg SCO $D_{Cr}$ , consumed per mg N $O_3$-N removed varied depend on the influent SCO $D_{Cr}$ /TKN ratios.

디젤엔진에서 배기가스 재순환 방법을 이용한 아산화질소의 배출률 저감 (Reduction of Nitrous Oxide Emission by EGR Method on Diesel Engine)

  • 유동훈
    • 동력기계공학회지
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    • 제19권3호
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    • pp.16-21
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    • 2015
  • Nitrous oxide($N_2O$) concentration in the atmosphere has been constantly increased by the human activities with industrial growth after the industrial revolution. One of factors to increase $N_2O$ concentration in the atmosphere is the $N_2O$ emission caused by the combustion of marine fuel. Especially, a sulfur component included in marine fuel oils is known as increasing the $N_2O$ formation in diesel combustion. Form this point of view, $N_2O$ emission from a ship is not negligible. On the other hand, Exhaust gas recirculation(EGR) that have thermal, chemical and dilution effect is effective method for reducing the NOx emission. In this study, an author investigated $N_2O$ reduction by using EGR on a direct injection diesel engine. The test engine was a 4-stroke diesel engine with maximum output of 12 kW at 2600rpm, and operating condition of the engine was a fixed load of 75%. The experimental oil was a blend-fuel that were adjusted with sulfur ratio of 3.5%, and EGR ratio of 0%, 10%, 20% and 30%. In conclusion, diesel fuel that contained 3.5% sulfur component increased $SO_2$ emission in exhaust gas, and increment of EGR ratio reduced NO emission. Moreover, $N_2O$ emission was decreased as over 50% at EGR ratio of 10% and reduced 100% at EGR ratio of 30% compared with $N_2O$ emission of 0% EGR ratio.

공침법에 의한 $Ni_2Y$ 자성 분말의 합성 (Synthesis of $Ni_2Y$ magnetic particles by coprecipitation method)

  • 김한근;사공건
    • E2M - 전기 전자와 첨단 소재
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    • 제9권9호
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    • pp.906-910
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    • 1996
  • Ferroxplana N $i_{2}$Y(B $a_{2}$N $i_{2}$F $e_{12}$ $O_{22}$ ) magnetic particles, which is one of the hexagonal ferrite were synthesized by a coprecipitation method. The coprecipitates were prepared by adding aqueous solution of BaC $I_{2}$ - 2 $H_{2}$O, NiC $I_{2}$ - 6 $H_{2}$O and FeC $I_{3}$ - 6 $H_{2}$O(of which the mole ratio is $Ba^{+2}$ : N $i^{+2}$ : F $e^{3+}$= 1 : 1 : 6) to a mixture of NaOH and N $a_{2}$C $O_{3}$. The shape of Ferroxplana N $i_{2}$Y magnetic particles obtained at 1, 100(.deg. C) was hexagonal plate-like, average particle size and aspect ratio were 2(.mu.m) and 7, respectively.y.

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