• Title/Summary/Keyword: (Ba, Sr)$TiO_3$

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The fabrication and analysis of BSCT thick films for uncooled infrared detectors (비냉각 검출기를 위한 BSCT 후막의 제작과 특성 분석)

  • Noh, Hyun-Ji;Lee, Sung-Gap;Bae, Seon-Gi
    • Proceedings of the KIEE Conference
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    • 2008.10a
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    • pp.171-172
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    • 2008
  • $(Ba_{0.57}Sr_{0.33}Ca_{0.10})TiO_3$ (BSCT) thick films doped with 0.1 mol% $MnCO_3$ and $Yb_2O_3$ ($0.1{\sim}0.7$ mol%) were fabricated by the screen printing method on the alumina substrate. And the structural and electrical properties as a function of $Yb_2O_3$ amount were investigated. The lattice constants of the BSCT thick film doped with 0.1 mol% is 0.3955 nm. The specimen doped with 0.7 mol% $Yb_2O_3$ showed dense and uniform grains with diameters of about 6.3 mm. The thickness of all BSCT thick films was approximately 60 mm. The Curie temperature of the BSCT specimen doped with 0.1 mol% $Yb_2O_3$ was $18^{\circ}C$, and the dielectric constantand dielectric loss at this temperature was 4637 and 4.2%, respectively. The BSCT specimen doped with 0.1 mol% $Yb_2O_3$ showed the maximum value of $349{\times}10^{-9}C/cm^2K$ at Curie temperature. The figure of merit $F_D$ for specific detectivity of the specimens doped with 0.1 mol% $Yb_2O_3$ showed the highest value of $10.9{\times}10^{-9}Ccm/J$.

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Microstructure Analysis of Y-Ba-Cu-O thin Films Grown on STO Substrates with Controlled ZnO Nanorods (ZnO 나노막대가 형성된 STO기판에 증착한 Y-Ba-Cu-O 박막의 미세구조 분석)

  • Oh, S.K.;Jang, G.E.;Tran, H.D.;Kang, B.W.;Kim, K.W.;Lee, C.Y.;Hyun, O.B.
    • Progress in Superconductivity
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    • v.11 no.1
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    • pp.47-51
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    • 2009
  • For many large-scale applications of high-temperature superconducting materials, large critical current density ($J_c$) in high applied magnetic fields are required. A number of methods have been reported to introduce artificial pinning centers in $YBa_2Cu_3O_{7-{\delta}}$ films for enhancement of their $J_c$. We studied the microstructures and characteristic of $YBa_2Cu_3O_{7-{\delta}}$ films fabricated on $SrTiO_3$ (100) substrates with ZnO nanorods as pinning centers. Au catalyst nanoparticles were synthesized on STO substrates with self assembled monolayer to control the number of ZnO nanorods. The density of Au nanoparticles is approximately $240{\sim}260{\mu}m^{-2}$ with diameters of $41{\sim}49nm$. ZnO nanorods were grown on STO by hot-walled PLD with Au nanoparticles. Typical size of ZnO nanorod was around 179 nm in diameter and $2{\sim}6{\mu}m$ in length respectively. YBCO films deposited directly on STO substrates show the c-axis orientation, while YBCO films with ZnO nanorods exhibit any mixed phases without any typical crystal orientation.

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Dielectric and Pyroelectric Properties of Dy-doped BSCT Thick Films by Screen-printing Method

  • Noh, Hyun-Ji;Lee, Sung-Gap;Nam, Sung-Pill
    • Journal of Electrical Engineering and Technology
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    • v.4 no.4
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    • pp.527-530
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    • 2009
  • $(Ba_{0.57}Sr_{0.33}Ca_{0.10})TiO_3$(=BSCT) powders, prepared by the sol-gel method, were doped using $MnCO_3$ as the acceptor and $Dy_2O_3$ as the donor. This powder was mixed with an organic vehicle. BSCT thick films were fabricated by the screen-printing techniques on the alumina substrate. The structural and dielectric properties of BSCT thick films were investigated with variation of the $Dy_2O_3$ amount. As a result of the differential thermal analysis (DTA), the exothermic peak was observed at around $670^{\circ}C$ due to the formation of the polycrystalline perovskite phase. All the BSCT thick films showed the XRD patterns of a typical polycrystalline perovskite structure. The average grain size of BSCT thick films decreased with an increasing amount of $Dy_2O_3$. The relative dielectric constant and dielectric loss of the BSCT thick film doped $Dy_2O_3$ 0.1mol% were 4637.4 and 1.6% at 1kHz, respectively.

Dielectric and Structural of BST Thin Films with Cr doped prepared by Sol-gel method for Tunable application (Tunable 소자 응용을 위한 Sol-gel 법으로 제작된 BST 박막의 Cr 첨가에 따른 구조적, 유전적 특성)

  • Kim, Seung-Bum;Kim, Kyoung-Tae;Kim, Chang-Il
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.07b
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    • pp.623-626
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    • 2004
  • [ $Ba_{0.6}Sr_{0.4}TiO_3$ ] (BST) dielectric thin films doped by Cr were prepared using an alkoxide-based sol-gel method on the Pt/Ti/SiO2/Si substrate. Atomic force microscopy and x-ray diffraction analysis showed that increasing the Cr doping ratio causes increased grain size while the surface remains smooth and crack-free. It was also found that compared with undoped films the increase of Cr content in BST improves the dielectric constant and the leakage-current characteristics. The figure of merit reached the maximum value of 72.3 at the 5 mol % of Cr doping. This composition showed the dielectric constant of 426, the loss factor of 0.0065, tenability of 47.7%, and leakage-current density (at the electric field of 100 kV/cm) of $5.31{\times}10^{-8}A/cm^2$. The results show that the Cr-doped BST thin films are prospective candidates for applications in tunable devices.

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The Structural and Electrical Properties of the BST Thin Film Prepared by Sol-Gel method. (Sol-Gel법으로 제조한 BST 박막의 구조 및 전기적 특성)

  • Kim, Kyoung-Duk;Chung, Jang-Ho;Bae, Seon-Gi;Lee, Young-Hie
    • Proceedings of the KIEE Conference
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    • 1997.11a
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    • pp.291-293
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    • 1997
  • In this study, Sol-Gel derived $(Ba_{0.7}Sr_{0.3})TiO_3$ thin films were fabricated and investigated. The stock solution was synthesized and spin-coated on Pt/Ti/$SiO_2$/Si substrate at 4000(rpm] and then, annealed at $650{\sim}750[^{\circ}C]$. Crystallization condition, microstructural properties and interfacial structure were observed by XRD, AFM, SEM and TEM. It was found that the BST thin films were completely crystallized at 750[$^{\circ}C$] and showed nano-sized grains. The dielectric constant and loss of the BST thin films were 220, 0.01 at 1[kHz] respectively. Increasing the temperature, the dielectric constant and loss characteristics were not varied widely. At the applied voltage of 1.5[V], the leakage current density was under the $10^{-9}[A/cm^2]$.

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Poling-dependent Ferroelectric Properties of SBN30 Thin Films (분극에 의한 SBN30 박막의 강유전특성 변화)

  • Jang, Jae-Hoon;Lee, Dong-Gun;Lee, He-Young
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.11a
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    • pp.309-312
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    • 2002
  • Ferroelectric $Sr_{0.3}Ba_{0.7}Nb_{2}O_{6}$ (SBN30) thin films were deposited on Pt/Ti/$SiO_{2}$/Si(100) substrates by ion beam sputtering. During annealing treatment at $750^{\circ}C$, poling was attempted by applying dc voltage bias across polished surfaces. Phase relation, microstructure and crystallization behavior were examined using XRD and FE-SEM. Ferroelectric hysteresis characteristics were also determined where both remanent polarization and coercive values decreased with the increase of bias voltage. The measured remanent polarization and coercive field values at 5 V and 10 V bias were $36{\mu}C/cm^2$, $10{\mu}C/cm^2$ and 100kV /cm, 80kV /cm, respectively.

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Petrology of the Tertiary Basaltic Rocks in the Yeonil and Eoil Basins, Southeastern Korea (한반도 동남부 제3기 연일, 어일분지에 나타나는 현무암질암의 암석학적 연구)

  • Shim, Sung-Ho;Park, Byeong-Jun;Kim, Tae-Hyeong;Jang, Yun-Deuk;Kim, Jung-Hoon;Kim, Jeong-Jin
    • The Journal of the Petrological Society of Korea
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    • v.20 no.1
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    • pp.1-21
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    • 2011
  • Eoil basalt in the Eoil basin and Yeonil basalt and its related volcanic rocks in Guryongpo and Daebo area were researched and analyzed to purse the tectonic settings and magma characteristics of those Tertiary volcanic rocks in the south-east Korean peninsula. It is highly suggested that zoning, resorption and sieve texture in plagioclase and reaction rim in pyroxene indicate unstable tectonic environments and complex volcanism in the study area. Volcanic rocks from Janggi basin are identified as basalt and basaltic andesite in TAS diagram and sub-alkaline series in terms of magma differentiation. $Na_2O$ and $K_2O$ show positive trend however FeO, CaO, MgO and $P_2O_5$ indicate negative trend in Harker variation diagram with $SiO_2$. Basaltic rocks from Eoil area are identified as calc-alkaline series in AFM diagram and show medium K series calc-alkaline in $K_2O-SiO_2$ diagram. Compatible trace elements of Co, Ni, V, Zn, and Sc in Yeonil basalt show negative trend with crystallization but incompatible trace element of Ba, Rb show positive trend with $SiO_2$ 0.81~1.00 of $Eu/Eu^*$ value suggests minor effect of plagioclase fractionation in Yeonil basaltic rocks. Plagioclase composition of Eoil basalt ranges from $An_{63.46-98.38}\;Ab_{1.62-32.96}\;Or_{0-3.58}$ (anorthite-labradorite) in core to $An_{40.89-82.44}\;Ab_{17.10-46.43}\;Or_{0-12.68}$ (bytownite-labradorite) in rim. $^{87}Sr/^{86}Sr$ and 143Nd;t44Nd ranges 0.704090~0.704717 and 0.512705~0.512822 respectively. Negative linear trends in 87Sr/86Sr and $^{143}Nd/^{144}Nd$ correlation diagram indicate that magma produced Yeonil basalt and basaltic andesite has been originated as partial melting product of mantle wedge by subducting Pacific plate affected by oceanic crust with less effect of continental crust indicating calc-alkaline magma characteristics.

Occurrence and Chemical Composition of White Mica from Zhenzigou Pb-Zn Deposit, China (중국 Zhenzigou 연-아연 광상의 백색운모 산상과 화학조성)

  • Yoo, Bong Chul
    • Korean Journal of Mineralogy and Petrology
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    • v.35 no.2
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    • pp.83-100
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    • 2022
  • The Zhenzigou Pb-Zn deposit, which is one of the largest Pb-Zn deposit in the northeast of China, is located at the Qingchengzi mineral field in Jiao Liao Ji belt. The geology of this deposit consists of Archean granulite, Paleoproterozoinc migmatitic granite, Paleo-Mesoproterozoic sodic granite, Paleoproterozoic Liaohe group, Mesozoic diorite and Mesozoic monzoritic granite. The Zhenzigou deposit which is a strata bound SEDEX or SEDEX type deposit occurs as layer ore and vein ore in Langzishan formation and Dashiqiao formation of the Paleoproterozoic Liaohe group. White mica from this deposit are occured only in layer ore and are classified four type (Type I : weak alteration (clastic dolomitic marble), Type II : strong alteration (dolomitic clastic rock), Type III : layer ore (dolomitic clastic rock), Type IV : layer ore (clastic dolomitic marble)). Type I white mica in weak alteration zone is associated with dolomite that is formed by dolomitization of hydrothermal metasomatism. Type II white mica in strong alteration zone is associated with dolomite, ankerite, quartz and alteration of K-feldspar by hydrothermal metasomatism. Type III white mica in layer ore is associated with dolomite, ankerite, calcite, quartz and alteration of K-feldspar by hydrothermal metasomatism. And type IV white mica in layer ore is associated with dolomite, quartz and alteration of K-feldspar by hydrothermal metasomatism. The structural formulars of white micas are determined to be (K0.92-0.80Na0.01-0.00Ca0.02-0.01Ba0.00Sr0.01-0.00)0.95-0.83(Al1.72-1.57Mg0.33-0.20Fe0.01-0.00Mn0.00Ti0.02-0.00Cr0.01-0.00V0.00Sb0.02-0.00Ni0.00Co0.02-0.00)1.99-1.90(Si3.40-3.29Al0.71-0.60)4.00O10(OH2.00-1.83F0.17-0.00)2.00, (K1.03-0.84Na0.03-0.00Ca0.08-0.00Ba0.00Sr0.01-0.00)1.08-0.85(Al1.85-1.65Mg0.20-0.06Fe0.10-0.03Mn0.00Ti0.05-0.00Cr0.03-0.00V0.01-0.00Sb0.02-0.00Ni0.00Co0.03-0.00)1.99-1.93(Si3.28-2.99Al1.01-0.72)4.00O10(OH1.96-1.90F0.10-0.04)2.00, (K1.06-0.90Na0.01-0.00Ca0.01-0.00Ba0.00Sr0.02-0.01)1.10-0.93(Al1.93-1.64Mg0.19-0.00Fe0.12-0.01Mn0.00Ti0.01-0.00Cr0.01-0.00V0.00Sb0.00Ni0.00Co0.05-0.01)2.01-1.94(Si3.32-2.96Al1.04-0.68)4.00O10(OH2.00-1.91F0.09-0.00)2.00 and (K0.91-0.83Na0.02-0.01Ca0.02-0.00Ba0.01-0.00Sr0.00)0.93-0.83(Al1.84-1.67Mg0.15-0.08Fe0.07-0.02Mn0.00Ti0.04-0.00Cr0.06-0.00V0.02-0.00Sb0.02-0.01Ni0.00Co0.00)2.00-1.92(Si3.27-3.16Al0.84-0.73)4.00O10(OH1.97-1.88F0.12-0.03)2.00, respectively. It indicated that white mica of from the Zhenzigou deposit has less K, Na and Ca, and more Si than theoretical dioctahedral mica. Compositional variations in white mica from the Zhenzigou deposit are caused by phengitic or Tschermark substitution [(Al3+)VI+(Al3+)IV <-> (Fe2+ or Mg2+)VI+(Si4+)IV] substitution. It means that the Fe in white mica exists as Fe2+ and Fe3+, but mainly as Fe2+. Therefore, white mica from layer ore of the Zhenzigou deposit was formed in the process of remelting and re-precipitation of pre-existed minerals by hydrothermal metasomatism origined metamorphism (greenschist facies) associated with Paleoproterozoic intrusion. And compositional variations in white mica from the Zhenzigou deposit are caused by phengitic or Tschermark substitution [(Al3+)VI+(Al3+)IV <-> (Fe2+ or Mg2+)VI+(Si4+)IV] substitution during hydrothermal metasomatism depending on wallrock type, alteration degree and ore/gangue mineral occurrence frequency.

A comparative study on the flux pinning properties of Zr-doped YBCO film with those of Sn-doped one prepared by metal-organic deposition

  • Choi, S.M.;Shin, G.M.;Joo, Y.S.;Yoo, S.I.
    • Progress in Superconductivity and Cryogenics
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    • v.15 no.4
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    • pp.15-20
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    • 2013
  • We investigated the flux pinning properties of both 10 mol% Zr-and Sn-doped $YBa_2Cu_3O_{7-{\delta}}$ (YBCO) films with the same thickness of ~350 nm for a comparative purpose. The films were prepared on the $SrTiO_3$ (STO) single crystal substrate by the metal-organic deposition (MOD) process. Compared with Sn-doped YBCO film, Zr-doped one exhibited a significant enhancement in the critical current density ($J_c$) and pinning force density ($F_p$). The anisotropic $J_{c,min}/J_{c,max}$ ratio in the field-angle dependence of $J_c$ at 77 K for 1 T was also improved from 0.23 for Sn-doped YBCO to 0.39 for Zr-doped YBCO. Thus, the highest magnetic $J_c$ values of 9.0 and $2.9MA/cm^2$ with the maximum $F_p$ ($F_{p,max}$) values of 19 and $5GN/m^3$ at 65 and 77 K for H // c, respectively, could be achieved from Zr-doped YBCO film. The stronger pinning effect in Zr-doped YBCO film is attributable to smaller $BaZrO_3$ (BZO) nanoparticles (the average size ${\approx}28.4$ nm) than $YBa_2SnO_{5.5}$ (YBSO) nanoparticles (the average size ${\approx}45.0$ nm) incorporated in Sn-doped YBCO film since smaller nanoparticles can generate more defects acting as effective flux pinning sites due to larger incoherent interfacial area for the same doping concentration.

BST Thin Film Variable Capacitor with High Tunability on Silicon Wafer (가변 특성이 우수한 실리콘 기판을 사용한 BST 박막형 가변 커패시터)

  • Kim Ki-Byoung;Yun Tae-Soon;Lee Jong-Chul;Kim Ran-Young;Kim Hyun-Suk;Kim Ho-Gi
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.16 no.3 s.94
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    • pp.253-259
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    • 2005
  • In this paper, BaSrTiO$_{3}$(BST) thin film tunable interdigital capacitor using low cost silicon substrate instead of expensive single-crystalline substrate is presented. The tunable capacitor in which BST thin film is deposited by PLD has operation frequency and applied bias up to 4 GHz and 50 V, respectively. The maximum tunability in capacitance is found to be 30$\%$, for an applied field of 5 kV/cm at a bias of 50 V. Therefore, it has been shown that the BST microwave tunable capacitor can be integrated onto Si substrate.