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BST Thin Film Variable Capacitor with High Tunability on Silicon Wafer  

Kim Ki-Byoung (RFIC Research and Education Center, Kwangwoon University)
Yun Tae-Soon (RFIC Research and Education Center, Kwangwoon University)
Lee Jong-Chul (RFIC Research and Education Center, Kwangwoon University)
Kim Ran-Young (Dept. of Material Sci. and Eng, KAIST)
Kim Hyun-Suk (Dept. of Material Sci. and Eng, KAIST)
Kim Ho-Gi (Dept. of Material Sci. and Eng, KAIST)
Publication Information
The Journal of Korean Institute of Electromagnetic Engineering and Science / v.16, no.3, 2005 , pp. 253-259 More about this Journal
Abstract
In this paper, BaSrTiO$_{3}$(BST) thin film tunable interdigital capacitor using low cost silicon substrate instead of expensive single-crystalline substrate is presented. The tunable capacitor in which BST thin film is deposited by PLD has operation frequency and applied bias up to 4 GHz and 50 V, respectively. The maximum tunability in capacitance is found to be 30$\%$, for an applied field of 5 kV/cm at a bias of 50 V. Therefore, it has been shown that the BST microwave tunable capacitor can be integrated onto Si substrate.
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