• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.12
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• pp.1108-1114
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• 1998

$BaTiO_3$ thin films preferred c-axis orientation for the potential application of ferroelectric memory devices were deposited on silicon substrates(100) by RF sputtering and annealed at 800 and 900[$^{\circ}C$] in air. The BT(100)/BT(110) peak ratio of the sputtered sample was decreased with post-annealing in air. According to increasing with annealing temperature and time, the peak ratio of BT(100)/BT(110) was decreased and the surface density of thin film was high. Dielectric characteristics of $BaTiO_3$ thin film was measured as a function of annealing temperature and frequency. The dielectric constants were increased with annealing and decreased with frequency by space charge polarization and dipole polarization below 600[kHz]. The remanent polarization and coercive field in P-E hysteresis loop of $BaTiO_3$thin film were increased with the annealing temperature in air. The remanent polarization and coercive filed annealed at 800[$^{\circ}C$] for 1hr were 1.2[$\mu$C/$cm^2$] and 200[kV/cm]

• The Korean Journal of Ceramics
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• v.3 no.2
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• pp.110-115
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• 1997

Li-doped ZnO films were prepared on Corning 1737 glass substrate by an rf magnetron sputtering technique using ZnO targets with various $Li_2CO_3$ contents ranging from 0 to 10 mol%. The effects of Li doping on the crystallinity and electrical properties of ZnO films were studied for their SAW filter applications. The film resistivity largely increased without suppressing the c-axis orientation and crystallinity with a small addition of Li. Heat treatment of the film at 40$0^{\circ}C$ induced that the film resistivity, c-axis orientation and crystallinity slightly increased. However, heat treatment of the film at 50$0^{\circ}C$ resulted in much lower resistivity than that of as-deposited film due to the increase of electron concentration caused by the evaporationof Li atoms from the ZnO film. Large addition of Li into the ZnO film rather diminished the film resistivity and suppressed the c-axis growth. It was concluded that a small doping of Li into the ZnO film and heat treatment at 40$0^{\circ}C$ caused the film resistivity to be high enough for SAW filter applications without suppression of the c-axis orientation and crystallinity.

• Progress in Superconductivity and Cryogenics
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• v.19 no.1
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• pp.30-35
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• 2017

The effects of the crystallographic orientation and sample thickness on the magnetic levitation forces (F) and trapped magnetic field (B) of single grain YBCO bulk superconductors were examined. Single grain YBCO samples with a (001), (110) or (100) surface were used as the test samples. The samples used for the force-distance (F-d) measurement were cooled at 77 K without a magnetic field (zero field cooling, ZFC), whereas the samples used for the B measurement were cooled under the external magnetic field of a Nd-B-Fe permanent magnet (field cooling, FC). It was found that F and B of the (001) surface were higher than those of the (110) or (100) surface, which is attributed to the higher critical current density ($J_c$) of the (001) surface. For the (001) samples with t=5-18 mm, the maximum magnetic levitation forces ($F_{max}s$) of the ZFC samples were larger than 40 N. About 80% of the applied magnetic field was trapped in the FC samples. However, the F and B decreased rapidly as t decreased below 5 mm. There exists a critical sample thickness (t=5 mm for the experimental condition of this study) for maintaining the large levitation/trapping properties, which is dependent on the material properties and magnitude of the external magnetic fields.

• Journal of the Korean Ceramic Society
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• v.43 no.6 s.289
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• pp.362-368
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• 2006

Epitaxial $Ba_{0.5}Sr_{0.5}TiO_3$ (BSTO) thin films have been grown on TiN buffered Si (001) substrates by Pulsed Laser Deposition (PLD) method and the effects of substrate temperature and oxygen partial pressure during the deposition on their dielectric properties and crystallinity were investigated. The crystal orientation, epitaxy nature, and microstructure of oxide thin films were investigated using X-Ray Diffraction (XRD) and Transmission Electron Microscopy (TEM). Thin films were prepared with laser fluence of $4.2\;J/cm^2\;and\;3\;J/cm^2$, repetition rate of 8 Hz and 10 Hz, substrate temperatures of $700^{\circ}C$ and ranging from $350^{\circ}C\;to\;700^{\circ}C$ for TiN and oxide respectively. BSTO thin-films were grown on TiN-buffered Si substrates at various oxygen partial pressure ranging from $1{\times}10^{-4}$ torr to $1{\times}10^{-5}$ torr. The TiN buffer layer and BSTO thin films were grown with cube-on-cube epitaxial orientation relationship of $[110](001)_{BSTO}{\parallel}[110](001)_{TiN}{\parallel}[110](001)_{Si}$. The crystallinity of BSTO thin films was improved with increasing substrate temperature. C-axis lattice parameters of BSTO thin films, calculated from XRD ${\theta}-2{\theta}$ scans, decreased from 0.408 m to 0.404 nm and the dielectric constants of BSTO epitaxial thin films increased from 440 to 938 with increasing processing oxygen partial pressure.

• Journal of the Korean institute of surface engineering
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• v.13 no.1
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• pp.3-7
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• 1980

The crystalline structure and leveling action on the deposit of zinc from the cyanide zinc electroplating bath containing organic additives, such as aldehydes, polymers, amines and condensed product, have been studied by microscope and X-ray diffraction methods. The crystalline structure of the deposit from the bath containing no-additive, polymers and aldehydes appeared very strong orientation on (101) plane and the surface was rough, while from condensed product having remarkable effects in brightness appeared very strong orientation on (110) and the crystallinity was very fine. In the leveling action, the effect of any additives except reaction product was not appreciable, whereas the effect of the reaction product obtained remarkably excellent result.

• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1245-1247
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• 1995

In this paper, Analyzed structual property using SEM and XRD. The longer distance between substrate and target enhance crystalographic orientation of (110)plane, but inhibit growth of (002)plane. Also, deposited ZnO thin film on electrode layer inhibit crystalographic orientation of (002)plane, expecially Al electrode inhibit stronger than Pt layer. And using fabricated transducer, analyzed eletric and frequency characteristics.

• Journal of the Korean institute of surface engineering
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• v.26 no.5
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• pp.245-254
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• 1993

The effects of pulse current electrolysis conditions on the composition and the microstructure of Ag-Sn alloy were studied by using a pyrophosphate bath. Both cathode current efficiency and throwing power of alloy deposits formed under pulse plating conditions, decreased with increasing mean current density, and lower than those under D.C. electrolysis condition. Tin content of Ag-Sn alloy decreased noticebly with in-creasing the mean current density, while it increased with the increase of On-time from 1 to 10 ms. The pre-ferred orientation of Ag-Sn alloy changed with increasing cathode overpotential in the sequence of (100)longrightarrow(100)+(111)longrightarrow(111) at $20^{\circ}C$ and (110)longrightarrow(111)longrightarrow(111)+(100) at $30^{\circ}C$. The effective crystal grain size of the alloy was decreased by decreasing temperature from $30^{\circ}C$ to $20^{\circ}C$ and the surface structure of them was related to the preferred orientation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.214-214
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• 2010

The 0.65Pb($Mg_{1/3}Nb_{2/3})O_3-0.35PbTiO_3$ (PMN-PT) thin films with $La_{0.5}Sr_{0.5}CoO_{3-\delta}$ (LSCO) bottom electrodes were grown on $CeO_2$/YSZ/Si(001), Pt/$TiO_2$/Si and $SrTiO_3$ (STO) substrates using conventional pulsed laser deposition (PLD) at a substrate temperature of $550^{\circ}C$. Since generally the crystallographic orientation of the bottom electrode induces the orientation of the films deposited on it, it allows us to observe the influence of the PMN-PT film orientation on the electrical properties. Phi scan done on PMN-PT/LSCO thin films shows epitaxial behavior of the films grown on sto substrates and $CeO_2$/YSZ buffered Si(001) substrates, and (110) texture on Pt/$TiO_2$/Si substrates. Polarization-electricfield (P-E) measurement shows good hysteresis behavior of PMN-PT films with remnant polarization of 18.2, 8.8, and $4.4{\mu}C/cm^2$ on $CeO_2$/YSZ/Si, Pt/TiO2/Si and STO substrates respectively.

• Korean journal of food and cookery science
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• v.33 no.1
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• pp.104-112
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• 2017

Purpose: This study aimed to analyze the contribution of emotional labor (surface acting, deep acting) and organizational commitment (affective commitment, continuance commitment) to turnover intention and customer orientation of school foodservice dietitian. Methods: Our survey was administered to 393 school foodservice dietitian in the Busan area on February 11, 2014. Results: For verification of mean differences, the mean scores for surface acting, deep acting, affective commitment, and continuance commitment were found to be 2.53/5.00, 3.71, 2.88, and 3.57, respectively. The mean surface acting score was significantly different according to age (p<0.001), total length of career as a dietitian (p<0.01), school type (p<0.001), and employment status (p<0.05). The mean deep acting and turnover intention scores were significantly different according to age (p<0.001), total length of career as a dietitian (p<0.001), school type (p<0.001), employment status (p<0.001), and no. of meals served (p<0.001). The mean customer orientation score was significantly different according to age (p<0.05), employment status (p<0.01), and number of work hour (p<0.05). There was a positive correlation (p<0.01) between turnover intention and surface acting and continuance commitment, but a negative correlation (p<0.01) with deep acting and affective commitment. Also, there was a positive correlation (p<0.01) between customer orientation and deep acting, affective commitment, but a negative correlation (p<0.01) with surface acting. Affective commitment had a negative influence on turnover intention (${\beta}=-0.444$, p<0.001), but surface acting had a positive influence on turnover intention (${\beta}=0.110$, p<0.05). Conclusion: These results suggest that management of affective commitment is essential for decreasing turnover intention. Therefore, emotional labor and organizational commitment of school foodservice dietitians should be managed from the school foodservice organizational viewpoint of The Ministry of Education.

• Journal of the Korean institute of surface engineering
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• v.53 no.1
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• pp.1-8
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• 2020

Sulfamate-chloride baths were fabricated to study the properties of the electrodeposited Ni and NiCo thin films. The dependences of current efficiency, deposit composition of Ni and Co, residual stress, surface morphology and microstructure of electrodeposited Ni and NiCo thin films on CoCl₂ concentration in sulfamate-chloride baths were investigated. The current efficiency was measured to be more than about 90%, independent of the changes of CoCl₂ concentration in the baths. Residual stress of Ni and NiCo thin films was increased from about 45 to about 250 MPa with varying CoCl₂ concentration from 0 to 0.210 M CoCl₂ in the baths and then reached to a plateau, about 250 MPa above 0.420 M CoCl₂ concentration. Nodular surface morphologies were observed at most CoCl₂ concentrations in the baths except 0.210 M. NiCo thin film electrodeposited from the bath with 0.210 M CoCl₂ concentration showed an acicular surface morphology. Pure Ni thin film consists of FCC(111), FCC(200), FCC(220), and FCC(311) peaks without any preferred orientation. On the other hand NiCo thin films make up of HCP(100), FCC(111), HCP(101), FCC(200), FCC(220) or HCP(110), FCC(311) or HCP(112) and FCC(222) peaks. It was revealed from the analysis of XRD result that FCC(111) peak at the NiCo thin film electrodeposited from the bath with 0.084 M CoCl₂ concentration can be regarded as the preferred orientation. However the peak of the preferred orientation was changed to FCC(220) or HCP(110) above 0.084 M CoCl₂ concentration in the baths. Then the intensity of FCC(220) or HCP(110) peak was gradually decreased with increasing CoCl₂ concentration further. The crystalline size of pure Ni thin film was observed to be about 53 ㎛ and those of NiCo thin films were in the range of 35~45 ㎛.