• Journal of the Korean Electrochemical Society
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• v.16 no.1
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• pp.19-29
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• 2013

Effects of current density, electrodeposition temperature and solution pH on properties of Cu thin films electrodeposited from pyrophosphate bath were investigated. Current efficiency was decreased with increasing current density and increased with increasing temperature. But solution pH slightly influenced on current efficiency and current efficiency was measured to be above 90% at both room temperature and $55^{\circ}C$. Residual stress of Cu thin film electrodeposited at room temperature was decreased with increasing current density, while current density reaches to 60 $mA/cm^2$ or more, stress became close to zero. Cu thin films electrodeposited at $55^{\circ}C$ exhibited the residual stress range of 0~40 MPa. At room temperature, dendritic surface morphology was observed above the current density of 30 $mA/cm^2$ and at $55^{\circ}C$, above the current density of 100 $mA/cm^2$. Cu thin films electrodeposited from bath solution with room temperature and $55^{\circ}C$ mainly consisted of (111) peaks. Specially, Cu thin film electrodeposited at 30 $mA/cm^2$ and $55^{\circ}C$ exhibited strong preferred orientation of (111) peaks.

• Journal of the Korean Chemical Society
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• v.53 no.1
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• pp.42-50
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• 2009

The dielectric-spectroscopic and ac conductivity studies firstly carried out on layered manganese doped Sodium Lithium Trititanates ($Na_{1.9}Li_{0.1}Ti_3O_7$). The dependence of loss tangent (Tan$\delta$), relative permittivity ($\varepsilon_r$) and ac conductivity ($\sigma_{ac}$) in temperature range 373-723K and frequency range 100Hz-1MHz studied on doped derivatives. Various conduction mechanisms are involved during temperature range of study like electronic hopping conduction in lowest temperature region, for MSLT-1 and MSLT-2. The hindered interlayer ionic conduction exists with electronic hopping conduction for MSLT-3. The associated interlayer ionic conduction exists in mid temperature region for all doped derivatives. In highest temperature region modified interlayer ionic conduction along with the polaronic conduction, exist for MSLT-1, MSLT-2, and only modified interlayer ionic conduction for MSLT-3. The loss tangent (Tan$\delta$) in manganese-doped derivatives of layered $Na_{1.9}Li_{0.1}Ti_3O_7$ ceramic may be due to contribution of electric conduction, dipole orientation, and space charge polarization. The corresponding increase in the values of relative permittivity may be due to increase in number of dipoles in the interlayer space while the corresponding decrease in the values of relative permittivity may be due to the increase in the leakage current due to the higher doping.

• Korean Journal of Materials Research
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• v.4 no.1
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• pp.9-23
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• 1994

Epitaxial $CoSi_2$ layer has been grown on NaCl(100) substrate at low deposition temperature($200^{\circ}C$) by multitarget bias cosputter deposition(MBCD). The phase sequence and crystallinity of deposited silicide as a function of deposition temperature and substrate bias voltage were studied by X-ray diffraction(XRD) and transmission electron microscopy(TEM) analysis. Crystalline Si was grown at $200^{\circ}C$ by metal induced crystallization(M1C) and self bias effect. In addition to, the MIC was analyzed both theoretically and experimentally. The observed phase sequence was $Co_2Si \to CoSi \to Cosi_2$ and was in good agreement with that predicted by effective heat of formation rule. The phase sequence, the CoSi(l11) preferred orientation, and the crystallinity had stronger dependence on the substrate bias voltage than the deposition temperature due to the collisional cascade mixing, the in-situ cleaning, and the increase in the number of nucleation sites by ion bombardment of growing surface. Grain growth induced by ion bombardment was observed with increasing substrate bias voltage at $200^{\circ}C$ and was interpreted with ion bombardment dissociation model. The parameters of $E_{Ar}\;and \alpha(V_s)$ were chosen to properly quantify the ion bombardment effect on the variation in crystallinty at $200^{\circ}C$ with increasing substrate bias voltage using Langmuir probe.

• The Journal of the Korea Contents Association
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• v.18 no.7
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• pp.84-94
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• 2018

This study analyzed domestic media articles from 1920 to 2017 using R 3.4, a big data analysis tool. In addition, it examines the sexual minority discourse reproduced through the media for about 100 years, focused on the role of the film as an art of struggling with the projective aversion to sexual minorities. sexual minorities in movies are not abominable. They are people we already know in our daily lives, and they are just different in sexual orientation. In general, sexual minorities are less likely to encounter in everyday life, so they are experienced and perceived through what the media present. It is noteworthy that the representation of sexual minorities in the media is formed as a major agenda of our society by publicizing the problems underlying society on the surface. It causes social issues to be raised by revealing and highlighting the problems that are regarded as alienated and avoided from the mainstream's gaze. The content provided by the media enables a three-dimensional experience of subjects who have not experienced it by themselves, and has a decisive influence in correctly recognizing and judging society. Media content suggests that it can be a powerful weapon of recognition struggle that can naturally fight against social hatred without using methods such as demonstrations or protests.

• Journal of the Korean Magnetics Society
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• v.7 no.6
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• pp.299-307
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• 1997

NdFeB films have been grown onto Si(100) substrate by a KrF pulsed laser ablation of the targets of $Nd_xFe_{90.98-x}B_{9.02}$ (x=17.51~27.51) at the substrate temperature of 620~700 $^{\circ}C$ and the laser beam energy density of 2.75~5.99 J/$\textrm{cm}^2$. The films exhibit no preferred orientation, however, good hard magnetic properties were produced from as-deposited condition : $4{\pi}M_s$=7 kG, $4{\pi}M_r$=4 kG, and $H_c$=300~1000 Oe. The depositon rate was not greatly influenced by changing the substrate temperature, but it increases linearly by increasing the beam energy density. The beam energy density of 3 J/$\textrm{cm}^2$ gave the optimal condition to have the highest $4{\pi}M_r$ and $H_c$ as well. The higher content of Nd induces a higher coercivity and $4{\pi}M_r$ at the same time without prominent change in $4{\pi}M_s$.

• Geophysics and Geophysical Exploration
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• v.4 no.1
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• pp.8-18
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• 2001

To delineate the inhomogeneities including fractures and to estimate the freshness of rock borehole radar consisting of the reflection and tomography methods, and GPR surveys were conducted at a granite quarry mine. The borehole reflection survey using the direction finding antenna was also conducted to get the spatial orientations of reflectors. 20 MHz was adopted as the central frequency for the borehole radar reflection and tomography surveys and 100 MHz was for GPR. Through the interpretation of borehole reflection data using dipole and direction finding antenna as well as GPR images, which are good agreement with each other, we could determine the orientation of the major fractures in three dimensional way. Parts of travel time curves of tomography data showed the anisotropy, which is uncommon in granite quarry. By comparing the tomography data and TeleViewer images, the anisotropy effect in this area are closely related to fine fissures aligned in the same direction. The area confined by the two fractures, MF2 and MF5, might consist of the most fresh granite in the surveyed area, which was concluded from the borehole radar tomography, and GPR images as well as the distribution of anisotropy.

• Journal of the Korean Ceramic Society
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• v.34 no.2
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• pp.131-138
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• 1997

Silicon carbide films were chemically vapor deposited onto graphite substrates using MTS(Ch3SiCl3) as a source and Ar or H2 as a diluent gas. The experiments were performed at a fixed condition such as a de-position temperature of 130$0^{\circ}C$, a total pressure of 10 torr, and a flow rate of 100 sccm for each MTS and carrier gas. The purpose of this study is to consider the variation of the growth behavior with the addition of each diluent gas. It is shown that the deposition rate leads to maximum value at 200 sccm addition ir-respective of diluent gases and the deposition rate of Ar addition is faster than that of H2 one. It seems that these characteristics of deposition rate are due to varying interrelationship between boundary layer thick-ness and the concentration of a source with each diluent gas addition, when overall deposition rate is con-trolled by mass transport kinetics. The preferred orientation of (220) plane was maintained for the whole range of Ar addition. However, above 200 sccm addition, especially that of (111) plane was more increased in proportion to H2 addition. Surface morphologies of SiC films were the facet structures under Ar addition, but those were gradually changed from facet to smooth structures with H2 addition. Surface roughness be-came higher in Ar, but it became lower in H2 with increasing the amount of diluent gas.

• Journal of the Korean Vacuum Society
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• v.19 no.1
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• pp.52-57
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• 2010

$BiFeO_3/Pb(Zr_{0.52}Ti_{0.48})O_3$(BFO/PZT) multilayer thin films have been prepared on a Pt/Ti/$SiO_2$/Si(100) substrate by chemical solution deposition. BFO single layer, BFO/PZT bilayer and multilayer thin films were studied for comparison. X-ray diffraction analysis showed that the crystal structure of all films was multi-orientated perovskite phase without amorphous and impurity phase. The leakage current density at 500 kV/cm was reduced by approximately four and five orders of magnitude by bilayer and multilayer structure films, compared with BFO single layer film. The low leakage current density leads to saturated P-E hysteresis loops of bilayer and multilayer films. In BFO/PZT multlayer film, saturated remanent polarization of $44.3{\mu}C/cm^2$ was obtained at room temperature at 1 kHz with the coercive field($2E_c$) of 681.4 kV/cm.

• Journal of Plant Biology
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• v.38 no.1
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• pp.87-93
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• 1995

For understanding physiological nature of phototaxis in Synechocystis sp. PCC 6803 PTX(S. 6803 PTX), we examined the effects of some metabolic inhibitors and cation ionophore on the phototactic movement. In the presence of DCMU, which blocks the photosynthetic electron transport just after photosystem II acceptor, there was no inhibitory effect on the phototaxis up to $100\;\mu\textrm{M}$. Instead, the respiratory electron chain inhibitor such as sodium azide dramatically impaired the phototaxis in S. 6803 PTX. These observations indicate that the phototaxis is linked not to photo-phosphorylation, but to respiratory phosphorylation. When the cells were treated with un couplers such as CCCP or DNP, which dissipate the electrochemical gradient of proton($\Delta\mu_{H}+$) across the cytoplasmic membrane, these chemicals did not affect phototaxis. In contrast, when cells were treated with DCCD or NBD which deprive cells of A TP but leave $\Delta\mu_{H}+$ intact across the membrane, the phototactic movement was severly reduced. These results imply that ATP production, not proton motive force, is involved in the phototactic movement in this organism as a driving motive force. The application of specific calcium ionophore A23187 strongly impaired positive phototaxis. Calcium fluxes should be engaged in the sensory trans-duction of phototactic orientation. Finally, when ethionine was supplimented to culture media, the photomovement of this organism was inhibited. This implies that methylation/demethylation mechanism controls the process of phototaxis in S. 6803 PTX like chemotaxis in E. coli and Salmonella typhimurium.murium.

• Korean Journal of Materials Research
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• v.10 no.4
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• pp.270-275
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• 2000

The Pt/YMnO$_3$/Y$_2$O$_3$/Si structure for metal/ferroelectric/insulator/semiconductor(MFIS)-FET was fabricated and effect of $Y_2$O$_3$layer on the properties of MFIS structure was investigated. The $Y_2$O$_3$ thin films on p-type Si(111) substrate deposited by Pulsed Laser Deposition were crystallized along (111) orientation irrespective of the deposition temperatures. Ferroelectric YMnO$_3$ thin films deposited directly on p-type Si (111) by MOCVD resulted in Mn deficient layer between Si and YMnO$_3$. However, YMnO$_3$ thin films having good quality and stoichiometric composition can be obtained by adopting $Y_2$O$_3$ buffer layer. The memory window of the $Y_2$O$_3$thin films with YMnO$_3$ film is greater than that of the YMnO$_3$ thin films without $Y_2$O$_3$ film after the annealing at 85$0^{\circ}C$ in vacuum ambient(100mtorr). The memory window is 1.3V at an applied voltage of 5V.