• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.1049-1052
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• 2003

This study shows the change of the structural characteristic of AIN thin film deposition with the change of the deposition conditions such as Ar/$N_2$ gas ratio, operating pressure in chamber, and the distance between substrate and target in RF Magnetron Sputtering. The orientation and surface roughness of AIN thin film are studied by using XRD and AFM and the thickness is measured by using STYLUS PROFILER. While we can not identify the orientation of the thin film deposited in Ar only, we can obtain the (100) orientation of the thin film with the addition of $N_2$ to Ar. Especially the thin film deposited at 10% of Ar/$N_2$ gas ratio appears to be the most (100) oriented. The (100) orientation of thin film becomes weaker as the operating pressure becomes higher. The further distance between substrate and target is stronger the (100) orientation of the thin film is. The (100) orientation becomes weaker and (002) orientation starts to appear as the distance is shorter.

• Proceedings of the KSME Conference
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• 2004.11a
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• pp.268-273
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• 2004

Deformation of single crystals was studied using finite element analysis to investigate the orientation dependence of plastic deformation observed in NiAl single crystals. Investigation of mechanical properties of single crystals is closely related with the understanding of deformation processes in single crystals. Orientation dependence of material behavior in NiAl single crystals was studied by rotating loading directions from 'hard' orientation. The maximum nominal compressed stress in NiAl single crystals was ranged in a quite wide scope depending on the misalignment from 'hard' orientation. As the compressed axis set closer to 'hard' orientation, the maximum nominal compressed stress rapidly increased and made <100> slips difficult to activate. Therefore, non-<100> slips will be activated instead of <100> slips for 'hard' orientation.

• Journal of Mechanical Science and Technology
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• v.19 no.3
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• pp.802-810
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• 2005

Deformations of single crystals were studied using finite element analysis to investigate the localized modes and the orientation dependence of plastic deformation observed in single crystals. Investigation of mechanical properties of single crystals is closely related with the understanding of deformation processes in single crystals. Localized bands such as shear and kink were studied and the material and geometric characteristics that influence the formation of such localized bands were investigated. Orientation dependence of material behavior in NiAl single crystals was studied by rotating slip directions from 'hard' orientation. The maximum nominal compressed stress in NiAl single crystals was widely ranged depending on the misalignment from 'hard' orientation. As the compression axis was set closer to 'hard' orientation, the maximum nominal compressed stress was rapidly increased and made <100> slips difficult to activate. Therefore, non-<100> slips will be activated instead of <100> slips for 'hard' orientation.

• Journal of the Korean Ceramic Society
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• v.32 no.8
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• pp.950-956
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• 1995

Y2O3 thin films were deposited by reactive sputtering of Y target in Ar and O2 gas mixture. Residual stress was measrued by sin2$\psi$ method of x-ray diffraction (XRD) and growth orientation was examined by measuring the relative intensity of (400) plane and (222) plane of Y2O3 films. In the case that Y2O3 films were deposited at 40$0^{\circ}C$ and at low working pressure below 0.05 torr the film had large compressive stress and (111) plane orientation. At working pressure of about 0.10 torr the film had small compressive stress and (100) orientation. Above working pressure of 0.20 torr, the films had nearly zero stress and random orientation. In the case that the (111) oriented film deposited at low working pressure below 0.05 torr, as substrate temperature decreased, (111) orientation increased. In the case the film, with (100) orientation, deposited at working pressure of about 0.10 torr, (100) orientation increased with decresing substrate temperature. These relationship of residual stress and growth orientation can be explained by the relationship of surface energy and strain energy.

• Journal of Surface Science and Engineering
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• v.22 no.4
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• pp.207-214
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• 1989

The surface morphology and the proferred orientation of the Pb-Sn alloy electrodeposite were investated by the change of electrolysis conditions in pulse current electroplating. The preferred orientation of Pb-phase in alloy deposits was changed in the sequence of (110)longrightarrow(100)or(100)+(111)longrightarrow(111) with increasing peak current density, while that of $\beta$-Sn phase changed from (321)+(301)to(301)+(111) mixed orientation. The surface morphology was closely related to the preferred orientation of alloy electrodeposits. The alloy deposits, which had (100)or(111) for pb-phase and (321)or(100)(301)for $\beta$-Sn sespectively, showed the surface structure of granular crystallites. The alloy deposits whih mixed orientations for both phases had microstructure of closely the closely stacked crysrallites, which was inclined to the surface.

• Journal of the Korean Ceramic Society
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• v.41 no.2
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• pp.106-110
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• 2004

Nickel oxide (NiO) thin films were prepared on Si(100) substrates at room temperature by RF magnetron sputtering using a NiO target. The effects of oxygen flow ratio for the plasma gas on the preferred orientation and surface morphology of the NiO films were investigated. Highly crystalline NiO film with (100) orientation was obtained when it was deposited in pure Ar gas. For NiO film deposited in pure O$_2$ gas, on the other hand, the orientation of the film changed from (100) to (111) and its deposition rate decreased. The origin of the preferred orientation of the films was discussed. NiO films also showed different surface morphologies and roughnesses with the oxygen flow ratio.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.10
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• pp.1023-1028
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• 2004

We fabricated AIN thin film by using RF magnetron sputtering and studied the structural characteristic of AIN thin film with the change of the deposition conditions such as Ar/$N_2$ flow ratio, working pressure, and the distance between substrate and target. The orientation and surface roughness of AIN thin film were studied by using XRD and AFM. We can not identify the orientation of the thin film deposited in Ar, while we obtained the (l00) orientation of the thin film with the addition of $N_2$. Especially, the thin film deposited at 18/2 (seem) of Ar/$N_2$ flow ratio exhibited to be the most (100) oriented. The (100) orientation of thin film becomes weaker as the working pressure becomes higher. The further distance between substrate and target is stronger the (100) orientation of the thin film, but the (100) orientation becomes weaker and (002) orientation started to appear as the distance is shorter. The surface roughness of the thin film deposited at 50$0^{\circ}C$ in Ar only is 1.1 nm, while very smooth thin film of 0.4～0.6 nm is obtained with the addition of $N_2$.

• Journal of the Korean Ceramic Society
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• v.31 no.4
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• pp.457-463
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• 1994

The growth condition of highly oriented textured diamond film on a (100) Si substrate was investigated as a function of texture orientation. The growth process consisted of biased enhanced nucleation (BEN) and texture growth. The substrate was under the plasma of 6% CH4-94% H2 with negative bias of 200V during the BEN which grounded during the texture growth. The texture orintation changed from <100> to <110> by increasing substrate temperature. The nearly perfect match between textured diamond grains and the Si substrate could be obtained under the condition of <100> texture. The degree of tilt mismatch increased with the increase of deviation of texture orientation from <100>. The degree of twist mismatch appeared to increase abruptly beyond the critical deviation of texture orientation from <100> because the nuclei having the same orientation as the substrate were no more preferred grains for texture formation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.4
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• pp.338-343
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• 2005

Pb(Zr,Ti)O₃[PZT] thin films were prepared on a highly (100) oriented LaNiO₃[LNO] and a randomly oriented LNO by sol-gel process. The PZT thin films on a highly (100) oriented LNO show a high (100) crystal orientation (F=100 ％), those on a randomly oriented LNO show a random crystal orientation (F=60 ％). All the PZT layer have a flat and dense microstructure with large columnar grains and their grain size are 25 nm. In the ferroelectric curves at electric field of 40 kV/cm, a highly (100) oriented PZT/LNO samples show coercive field, E/sub c/=10 kV/cm and remanent polarization, P/sub r/=14.5 μC/㎠, while a randomly oriented PZT/LNO sample show E/sub c/=10 kV/cm and P/sub r/=5.4 μC/㎠.

• Journal of the Korean Ceramic Society
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• v.27 no.2
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• pp.155-160
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• 1990

Al-rich Mg-Al spinel single crystals were grown by Verneuil process using oxygen and hydrogen flame. Spinel single crystals were grown in chemical compositions from MgO : Al2O3 mole ratio 1 : 1 to 1 : 3. Mole ratio 1 : 1 was hard to be grown and mole ratio 1 : 2.5 and 1 : 3 were grown well. Selecting well-grown mole ratio 1 : 3, seeds were prepared having [100], [110] and [111] orientation respectively. Growth rate were highest in [100] orientation and lowest in [111] orientation.