• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.176-177
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• 2005

In this paper, in order to develop low temperature sintering $PbTiO_3$-system piezoelectric ceramics for thickness-vibration-mode piezoelectric transformer, $Pb_{0.76}Ca_{0.24}[(Mn_{1/3}Sb_{2/3})_{0.04}Ti_{0.96}]O_3$ ceramics using $0.25wt%CaCO_3$ and 0.2wt%$Li_2CO_3$ as sintering aids were manufactured according to the variation of poling field. Specimens could be sintered at the sintering temperature of $930^{\circ}C$. The piezoelectric properties increased according to the increase of poling field and showed the maximum values (kt=0.49, Qmt=1816, and $d_{33}$=81.4pC/N) under 6.5kV/mm.

• Nuclear Engineering and Technology
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• 제55권4호
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• pp.1218-1224
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• 2023

We investigated the radiation shielding competence for TeO₂-V₂O₅-MoO₃ glasses. The Phy-X software was used to report the radiation shielding parameters for the present glasses. With an increase in TeO₂ and MoO₃ content, the samples' linear attenuation coefficient improves. However, at low energies, this change is more apparent. At low energy, the present samples have an effective atomic number (Z_eff) that is relatively high (in order of 16.17-24.48 at 0.347 MeV). In addition, the findings demonstrated that the density of the samples is a very critical factor in determining the half value layer (HVL). The minimal HVL for each sample can be found at 0.347 MeV and corresponds to 1.776, 1.519, 1.391, 1.210 and 1.167 cm for Te1 to Te5 respectively. However, the highest HVL of these glasses is recorded at 1.33 MeV, which corresponds to 3.773, 3.365, 3.218, 2.925 and 2.908 cm respectively. The tenth value layer results indicate that the thickness of the specimens needs to be increased in order to shield the photons that have a greater energy. Also, the TVL results demonstrated that the sample with the greatest TeO₂ and MoO₃ concentration has a higher capacity to attenuate photons.

• KSBB Journal
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• 제26권1호
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• pp.13-18
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• 2011

본 연구에서는 $Ca(LA)_2$의 침전조건을 최적화하고 침전된 $Ca(LA)_2$ 용액에 황산을 처리하여 고순도, 고수율의 lactic acid를 회수할 수 있는 방법을 개발하고자 하였다. 특히 $Ca(LA)_2$의 용해도를 낮추기 위하여 여러 종류의 유기용매 첨가에 따른 영향을 평가하였다. 모델용액의 경우 침전을 위한 최적의 석회종류, 석회량, 교반속도, 시간, 온도, 유기용매 첨가량은 각각 CaO, 0.0175 g/mL, 220 rpm, 24 h, $5^{\circ}C$, ethanol 25% (v/v)이었으며 최적 조건 하에서 가장 높은 순도 (98%)와 수율(69%)을 얻을 수 있었다. 발효배양액 (lactic acid 순도: 69%, pH: 7.3)의 경우, 모델용액으로부터 얻은 최적의 조건 하에서 $Ca(LA)_2$ 회수 과정에서 64%, 회수된 $Ca(LA)_2$에 황산을 첨가 ($Ca(LA)_2/H_2SO_4$ molar ratio = 1:1)하여 lactic acid를 회수하는 과정에서 86%의 회수율을 각각 얻어 발효배양액으로부터 총괄 수율 55%로 lactic acid (순도: 88.6%)를 얻을 수 있었다.

• 한국표면공학회지
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• 제13권1호
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• pp.8-15
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• 1980

The critical voltage of hard coat range of Al alloys (K 186, 43S) at various electrolytes and the effects of voltage, temperature of electrolytes and concentration of sulfric acid were investigated, m the hope that to find the adequate voltage. Two kind of A1 alloys were anodized in three typical electrolytes and micro vickers hardness of the films were measured. With respect to the relationship between the hardness of the film and the voltage The result of this experiment are as fallows. 1. The critical voltage of hard coat rangs for the electrolytes $H_2SO_4\;10%,\;H_2SO_4\;10%\;+\;H_2C_2O_4\;2H_2O\;10g/l,\;H_2SO_4\;10%\;+\;NaHSO_4\;5%$ was 20V 22V 24V respectively. 2. $H_2SO_4\;10%\;+\;NaHSO_4$ 5% electrolyte was most adventageous among the three electrolyte in the respect of hardness. 3. The effect of concentration of sulphuric acid was not appeared.

• 생명과학회지
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• 제18권7호
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• pp.980-985
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• 2008

양파는 우리 식생활에서 자주 사용되는 식품 재료로서 그 재배 방법이 용이하여 전국 각지에서 많이 생산되고 있다. 양파 내에는 glutamic acid, arginine 등 다양한 종류의 아미노산이 들어 있어서 그 효능을 증가시킨다. 본 연구에서는 이러한 장점을 가지고 있는 양파의 수요 확대 및 국민 건강 증진을 위하여 양파즙을 기질로 하여 알코올 발효 조건을 검토하고 나아가 발효주의 품질을 개선하여 산업화를 위한 발판을 마련하고자 하였다. 플라스크 배양 결과, 48시간 경에 정지기로 접어들고, 90시간 이후에 사멸기로 나타났다. 에탄올 생성은 114시간에서 정점을 보였다. 플라스크 배양의 최적 조건을 토대로 하여 유가 배양, 연속 배양 등 발효조 배양을 행하였다. 발효조 정치배양은 플라스크 배양과 유사한 결과를 보였지만, 약 24시간 정도 빠르게 진행되었다. 유가배양은 배양 시작 후 72시간 때 10% sucrose가 첨가된 양파즙 배지를 첨가하여 실시되었고, 균의 사멸을 방지하고 알코올의 일정농도를 유지하게 했다. 연속배양은 배양 시작 후 72시간 때부터 24시간 간격으로 연속적으로 신선한 배지를 균 생육이 유지되게 하였다. 그 결과 균 생육은 다소 감소하였지만, 일정농도의 알코올 생성은 가능한 것으로 나타났다. 또한 생체 내에서 항괴혈병 작용, 면역 촉진 작용 등의 생리 활성을 나타내는 비타민 C(L-ascorbic acid)의 유도체인 $2-O-{\alpha}-D-glucopyranosyl$ L-ascorbic acid (AA-2G)를 양파즙 배지에 첨가하여 알코올 발효의 특성을 분석하여 발효주의 비타민 C를 강화하고 면역 증강을 촉진시키는 기능성 발효주로의 가능성을 확인하였다.

• 한국전기전자재료학회논문지
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• 제14권5호
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• pp.362-369
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• 2001

The electrical properties of varistors consisting of Zn-Pr-Co-Cr-Er oxides were investigated in the Er$_2$O$_3$content range of 0.0 to 2.0 mol%. the varistors without Er$_2$O$_3$ exhibited a relatively low nonlinearity, which was 14.24 in the nonlinear exponent and 21.47 $\mu$A in the leakage current. However, the varistors with Er$_2$O$_3$ sintered at 1335$^{\circ}C$ for 1h exhibited very high nonlinear exponent of 70, in particular, reaching a maximum value of 78.05 in 2.0 mol% Er$_2$O$_3$, and those sintered at 1335$^{\circ}C$ for 2h exhibited the nonlinear exponent close to 50, in particular, reaching a maximum value of52.76 in 0.5 mol% Er$_2$O$_3$. The others except for 0.5 mol% Er$_2$O$_3$-added varistors exhibited very high instability resulting in a thermal runaway within a short time, even a weak DC stress. Increasing soaking time decreased the nonlinearity, but increased the stability. The varistors containing 0.5mol% Er$_2$O$_3$ sintered for 2h exhibited excellent stability, in which the variation rate of the varistor voltage and nonlinear exponent was -1.70% and -7.15%, respectively, under more severe DC stress such as (0.80 V$_{1mA}$/9$0^{\circ}C$/12h)+(0.85 V$_{1mA}$/115$^{\circ}C$/12h)+(0.90 V$_{1mA}$/12$0^{\circ}C$/12h)+(0.95 V$_{1mA}$/1$25^{\circ}C$/12h)+(0.95 V$_{1mA}$/15$0^{\circ}C$/12h).TEX>/12h).

• 한국결정학회:학술대회논문집
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• 한국결정학회 2002년도 정기총회 및 추계학술연구발표회
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• pp.15-15
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• 2002

Homogeneous and crack-free potassium lithium niobate (K₃Li/sub 2-x/Nb/sub 5+x/O/sub 15/, 0＜x＜0.5, KLN) single crystals were successfully grown by the Czochralski technique. The KLN single crystals of several different compositions were employed for the investigation of the lattice vibration spectra using infrared Raman spectroscopy. The characteristic Raman spectra of the [NbO/sub 6/]/sup 7-/ octahedral ions were strikingly influenced by the Li ion content. The symmetric stretch vibrational modes V₁, V₂ are broadened, and the symmetric bend vibration mode V/sub 5/ is broadened and even split into three peaks with increasing the Li content, supporting that the bend vibration modes of the [NbO/sub 6/]/sup 7-/ octahedrons are obviously perturbed by Li ions in the C site. Enhanced Raman peak intensities after the post annealing at 900℃ and for 24 h evidenced that a residual stress in as-grown crystals was negligible and only a defect concentration might be reduced.

• 한국결정학회지
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• 제18권1_2호
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• pp.1-6
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• 2007

유기금속 화합물 $C_{16}H_{35}B_{10}IrS_2Si$를 o-carborane으로 출발하여 $Cp^*Ir(S_2C_2B{10}H_{10})$을 합성하고, $Me_3SiCHN_2$를 가하여 합성하였다. X-선 회절법을 이용하여 $C_{16}H_{35}B_{10}IrS_2Si$ 화합물의 분자구조를 규명하였다. 이 화합물의 결정학적 자료는 monoclinic, space group $P2_1/n$, $a=10.1986(12)\;{\AA}$, $b=14.834(5)\;{\AA}$, $c=17.139\;{\AA}$, ${\beta}=92.24(2)^{\circ}$, Z=4, $V=2591.0(14)\;{\AA}^3$이다. 결정 구조는 직접법으로 해석하였으며, 완전행렬최소자승법을 정밀화 하였으며 5080개의 회절 반점에 대하여 최종 신뢰도 인자 R=0.053인 분자모형을 구하였다.

• 한국전기전자재료학회논문지
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• 제24권5호
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• pp.370-373
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• 2011

We investigated the effects of low temperature ($500^{\circ}C$) $O_2$ annealing on the characteristics of hafnium silicate ($HfSi_xO_y$) films deposited on a Si substrate by atomic layer deposition (ALD). We found that the post deposition annealing under oxidizing ambient causes the oxidation of residual Hf metal components, resulting in the improvement of electrical characteristics such as flat band voltage shift (${\Delta}V_{fb}$) by hysteresis without oxide capacitance reduction. We suggest that post deposition annealing under oxidizing ambient is necessary to improve the electrical characteristics of $HfSi_xO_y$ films deposited by ALD.

• 한국전기전자재료학회논문지
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• 제24권4호
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• pp.325-327
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• 2011

In this paper, nonvolatile nano-floating gate memory devices are fabricated with ZnO nanowires and Al nanoparticles on a $SiO_2/Si$ substrate. Al nanoparticles used as floating gate nodes are formed by the sputtering method. The fabricated device exhibits a threshold voltage shift of -1.5 V. In addition, we investigate the endurance and retention characteristics of the nano-floating gate memory device.