• Journal of the Korean Ceramic Society
• /
• v.40 no.2
• /
• pp.206-211
• /
• 2003

Effects of substrates and buffer layer upon the formation of crystalline phases and ferroelectricity of $YMnO_3$ thin films were investigated. The hexagonal $YMnO_3$ was easily formed on Si(100) while the mixed phases, hexagonal and orthorhombic $YMnO_3$, on $Pt(111)/TiO_2/SiO_2/Si$ substrate. When the $Y_2O_3$ buffer layer of 70 nm thick was inserted between the substrates and the $YMnO_3,$ the c-axis oriented hexagonal single phase formed on both substrates, Si(100) and $Pt(111)/TiO_2/SiO_2/Si$. The leakage current density of the hexagonal $YMnO_3$ thin films was lower than that consisting of mixed phases, hexagonal and orthorhombic. Furthermore the hexagonal $YMnO_3$ with c-axis preferred orientation showed the lowest leakage current density. The remnant polarization from a P-E hysteresis curve for the $YMnO_3$ formed on Si(100) was 0.14 without buffer layer and $0.24_{mu}C/cm^2$ for that with buffer layer. For the $Pt(111)/TiO_3/SiO_3/Si$ substrates, the specimen without $Y_2O_3$buffer layer did not show the hysteresis curve, while the buffer-layered has the remnant polarization of $1.14_{mu}C/cm^2$. It was concluded that the leakage current density and the ferroelectricity for the $YMnO_3$ thin films could be controlled by varying crystalline phases and their preferred orientation which depend on the kind of substrates and whether the $Y_2O_3$buffer layer exist or not.

• Proceedings of the Korean Vacuum Society Conference
• /
• 1998.02a
• /
• pp.24-24
• /
• 1998

반도체장비를 포함하는 초고진공장비의 園훌化가 급속히 그리고 절실히 요구되고 있는 것이 현실정이다. 當面해서 실현할 국산진공장비의 대상은 廣範圍하다. 즉, 각종 진공 pump ( (rotary, dry, diffusion, cryo, ion, turbo melecular pump), 진공 chamber, 진공 line, gate valve 를 위 시 한 진공 V머ve, flange, gasket, fl않d야lU, mainpulater 퉁 진공 部品이 다. 진공계 의 핵심 은 適切하고 優良한 진공재료의 선태파 사용이다. 진공장비는 사용자가 원하는 진공도를 원하 는 시간 동안 륨空度를 유지해 주어야 한다. 진공재료 선태의 기준사항은:(1) 기체의 透過성 (2) 薰했훌 (3) 혔體放出특성 - -outgassing과 degassing- (4) 機械的 량훌度 (5) 온도 의존성 (6) 化學톡성 (7) 加I성 및 鎔接 성 (8) 課電특성 (9) 磁氣특성 (10) 高速함子 및 放射線 특성 (11) 經濟성 및 調達생 둥이 다. 우량한 초고진공계재료는 풍부하게 개발되어 왔고, 또 新材料들이 개발되고 있다. 여기에서는 주로 초고진공 내지는 극고진공계의 構造材料, 機能材料, 部品材料 일반파 몇가지 신재료의 특 성에 관해서 記述한다. M Mild SteeHSAE, 1112, 1010, 1020, 1022, etc)., S Stainless SteeHAlSI, 304, 304L, 310, 316, 321, 347): 구조재료, chamber, fl하1ges A Aluminum과 Alloys (1060, 1100, 2014, 4032, 6(뻐1): 구조재료, chamber, flanges, gaskets A AI, Al 떠loy는 SS에 代替하는 역 할올 시 작하고 있다. C Copper, Copper Alloys(C11$\alpha$)0, C26800, C61400, Cl7200): 내장인자, gasket, cryopanel, tubing T Titanium, Ziriconium, Haf띠um 및 Alloys: 특히 Ti은 10n pump 용 getter material 이 외 에 U UHV,XHV용 chamber계로서 관심올 끌고 있다. N Nickel, Nickel Alloys (200, 204, 211, monel, nichrome): 부식 방지 , 전자장치 , 자기 장치 귀 금속(Ag, Au, Pt, Pd, Rh, Ir, Os, Ru): 보조부품, gasket, filament, coating, thermocouple, 접 합부위 T TiC, SiC, zrC, HfC, TaC 둥의 탄화물과, BN, TiN, AlN 동의 질화물, 붕화물이 둥장하고 었 다. 유리: Soda Lime, Borosilicate, Potash Soda Lead: View Port, Chamber envelope C Ceramics: AlZ03, BeO, MgO, zrOz, SiOz, MgOzSiOz, 3Alz032SiOz, Z$textsc{k}$hSiOz S상N4: e electrical, thermal insulators, crucibles, boats, single crystals, sepctr려 windows 저자는 최근 저자들이 발견한 Zr-Ti-Cu-Ni-Be amorphous alloys coated cham뾰r가 radiation p proof로 이용될 수 있는 사실을 점검하고 었다 .. Z.Y. Hua 들은 Cs3Sb를 새로운 photocathode 재료로 보고하고 있다.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.279-279
• /
• 2010

한국형 헬륨 냉각 고체형 증식(Helium Cooled Solid Breeder : HCSB) 시험 블랑켓(Test Blanket Module : TBM)은 삼중수소 증식을 위해서 $Li_2TiO_3$ 및 $Li_4SiO_4$ 페블을 고려하고 있으며, 중성자 반사 재료로는 SiC가 코팅된 흑연 페블을 사용할 예정이다. $Li_2TiO_3$ 및 $Li_4SiO_4$ 페블을 제조하기 위해서는 먼저 각각의 분말 제조가 선행되어야 한다. $Li_2TiO_3$ 분말을 합성하기 위해서는 먼저 Lithium 금속염과 Isopropoxide를 용매 및 폴리머 캐리어로서의 두 가지 기능을 하는 에틸렌글리콜에 첨가한 후 가열하여 완전히 용해시킨 후 혼합 용액을 건조시켜 겔형의 전구체를 제조한다. 이를 하소한 후 결정화시켜 Titanate 분말을 얻는데 이때의 건조, 하소 및 결정화 온도의 조건에 따른 분말의 크기 및 특성이 각각 다르다. 즉 하소 온도가 $600^{\circ}C$ 미만이면 열분해된 폴리머로부터 잔유 탄소가 남게 되고, $700^{\circ}C$를 초과하면 결정화가 시작된다. 이렇게 얻어진 Titanate분말은 지르코니아 볼을 이용하여 약 24 시간 동안 볼 밀링 과정을 통해 입도분포가 좁은 미세한 Titanate 분말로 만들었다. $Li_2TiO_3$ 페블은 위의 과정에서 얻어진 미세분말에 바인더를 이용하여 페블화 시킨 후 $1200^{\circ}C$의 전기로에서 최종 소결한 것이다. 중성자 반사 재료인 흑연페블은 강도가 약하기 때문에 표면에 SiC를 수 ${\mu}m$ 코팅해서 사용할 예정이다. 선행실험으로 건식법을 이용하여 SiC 코팅을 실시했으며, 그 결과를 소개할 것이다.

• Journal of the Korean Ceramic Society
• /
• v.39 no.5
• /
• pp.438-445
• /
• 2002

In this study, the glass frit of $PbO-TiO-2-SiO_2-BaO-ZnO-Al_2O-3-CaO-B_2O_3-Bi_2O_3-MgO$ system was manufactured. The glass was melted at $1,400{\circ}C$, quenched and attrition-milled. The glass frit powder was pressed and fired for 2h at the range of $750~1,000{\circ}C$. The crystallization of glass frit began at about $750{\circ}$ and at low temperature, the main crystal phases were hexagonal celsian($BaAl_2Si_2O_8$) and alumina. As the firing temperature increased, the crystal phases of monoclinic celsian, zinc aluminate, zinc silicate, calcium titanium silicate and titania appeared. And the increase of firing temperature led to transformation of hexagonal celsian to monoclinic. The only glass frit containing 15wt% PbO had the crystal phase of solid solution of $PbTiO_3-CaTiO_3$. At the frequency of 1 MHz, the dielectric constant of glass frit crystallized was in the range of 11~16 and the dielectric loss less than 0.020. But the glass frit containing 15wt% PbO had the dielectric constant of 17~26 and loss of 0.010~0.015 because of crystal phase of solid solution of $PbTiO_3-CaTiO_3$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.24 no.11
• /
• pp.895-899
• /
• 2011

Multiferroic BFO/PZT(5/95) multilayer films were fabricated by spin-coating method on the Pt/Ti/$SiO_2$/Si substrate alternately using BFO and PZT(9/95) alkoxide solutions. The structural and dielectric properties were investigated with variation of the solvent and the number of coatings. All films showed the typical XRD patterns of the perovskite polycrystalline structure without presence of the second phase such as $Bi_2Fe_4O_3$. BFO/PZT multilayer thin films showed the typical dielectric relaxation properties with increase an applied frequency. The average thickness of 6-coated BFO/PZT multilayer film was about 600 nm. The dielectric properties such as dielectric constant, dielectric loss and remnant polarization were superior to those of single composition BFO film, and those values for BFO/PZT multilayer film were 1199, 0.23% and 12 ${\mu}C/cm^2$.

• Journal of Sensor Science and Technology
• /
• v.19 no.3
• /
• pp.202-208
• /
• 2010

This study examined the dependency of crystalline orientation and electric properties of sol-gel PZT film on hydrolysis, a $PbTiO_3$ seed layer and a concentration of sol-gel solution. The PZT thin films were prepared by using 2-Methoxyethanol-based sol-gel method and spin-coating on Pt/Ti/$SiO_2$/Si substrates. The 1-${\mu}m$-thick PZT films were coated and then fired in a furnace by direct insert method. The highly (111) oriented PZT film of pure perovskite structure could be obtained. We could control the degree of orientation by various parameters such as hydrolysis, a $PbTiO_3$ seed layer and a concentration of sol-gel solution. The highest measured remanent polarization, dielectric constant and piezoelectric coefficient are $24.16\;{\mu}C/cm^2$, 2808, and 159 pC/N, respectively.

• Journal of the Korean Ceramic Society
• /
• v.37 no.7
• /
• pp.660-664
• /
• 2000

Effect of various kinds of additive such as AlOOH, Al(OH)3, Al2Si2O5(OH)4, Nb2O5, TiO2 and MgO on the properties and microstructures of UO2 pellet has been examined. All the tested dopants had played a role to reduce sintered density and open porosity. It was revealed that the addition of TiO2 made pellet more stable thermally. UO2 pellet doped with 0.2wt% TiO2 was swelled rather than densified after annealing for 24 hrs at 1$700^{\circ}C$. It was attributed to large pore with spherical shape. Titinia and silicon coexisted with Al element were more effective to increase grain size than other additives. It could be also revealed that the formation of liquid phase was the main cause of grain growth.

• Transactions on Electrical and Electronic Materials
• /
• v.1 no.1
• /
• pp.17-21
• /
• 2000

In order to investigate the dependence of a content in lead lanthanum titanate (PLT) films and heat treatment, sol-gel process has been used. Four types of PLT thin films with the chemical formula, Pb$\_$1-x/ La$\_$x/Ti$\_$1-x/4/O$_3$(X=18, 21, 24 and 28 mole %) have been fabricated on Pt/Ti/SiO$_2$/Si multi-layers and ITO/glass substrates, The post-annealing temperature in the range of 400~700 $\^{C}$ is applied for the formation of perovskite structure in PLT films. The structureal, electrical and optical properties of PLT film with the addition of La content are estimated. The films orientation and surface structure of films are studied by XRD (X-ray diffraction) and SEM(scanning electron microscopy). The P-E hysteresis loop become narrower with increasing La content. The average transmittance of the films is about 80%.

• Polymer(Korea)
• /
• v.24 no.3
• /
• pp.299-305
• /
• 2000

In order to increase the thermal stability at high temperatures, new hybrid ceramic percursors were synthesized by chemical modification of polycarbosilane (PCS). The structure of hybrid ceramic percursors were investigated by using FT-IR and $^1$H-NMR spectrometers. The syntheses of hybrid ceramic precursors were confirmed by monitoring the change of the adsorption peaks appearing at 0893, 1092, 609 $cm^{-1}$ / on the FT-IR spectra, and also by the presence of peaks at 3.8, 2.0, 0.6 ppm on the $^1$H-NMR spectra. The conversion of hybrid ceramic percursor was around 74 and 10 wt% higher than that of the pure PCS. After the heat-treatment at 150$0^{\circ}C$, the crystalline peaks for $\beta$-SiC were observed at 2$\theta$=35.7, 42.2, 61.0$^{\circ}$ on the X-ray powder diffractogram. It showed the conversion of hybrid ceramic percursor to crystalline $\beta$-SiC.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.11a
• /
• pp.51-54
• /
• 2003

Tb-doped lead zirconate titanate($Pb_{1.1}(Zr_{0.6}Ti_{0.4})O_3$; PZT) thin films on $Pt(111)/Ti/SiO_2/Si(100)$ substrates prepared by a sol-gel method. Films have a Zr/Ti ratio of 60:40 and perovskite phase structure. The effect on the structural and electrical properties of films measured according to Tb content. Dielectric and ferroelectric properties of PZT thin films were altered significantly by Tb-doping. The PZT thin film with higher dielectric constant and improved leakage current characteristic was obtained by adding 0.3 mol% Tb. At 100 kHz, the dielectric constant and the dielectric loss of the 0.3 mol% Tb-doped PZT thin film were 1611 and 0.24, respectively The remanent polarization(2Pr) of the 0.3 mol% Tb-doped PZT thin film was $61.4\;{\mu}C/cm^2$ and the coercive field was 61.9 kV/cm. Tb-doped PZT thin films showed improved fatigue characteristics comparing to the undoped PZT thin film.