• Tuberculosis and Respiratory Diseases
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• v.47 no.1
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• pp.26-34
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• 1999

Background : Generally $VO_2$ max is higher in treadmill exercise than cycle ergometer exercise. According to Hassen and Wasserman, $VO_2$ max with treadmill exercise is higher at ratio of 1.11 than that with cycle ergometer. $VO_2$ max also is influenced by race, sociocultural background, exercise habit In this study, $VO_2$ max and AT were evaluated between Treadmill and cycle exercise in male Korean college students. Method: Study subjects were 44 male college students. We randomized them into 2 groups; 24 students did treadmill exercise at first and 1 week later did cycle ergometer. Another 20 students did in opposite method. They made symptom limited maximal exercise. Author defined maximal exercise as followings: 1) respiratory exchange ratio(RER)> 1.1, 2) plateau>30 sec, 3) heart rate reserve(HRR) <15%, or 4) breathing reserve (BR)<30%. Otherwise their results are excluded as submaximal exercise. Anaerobic threshold(AT) was estimated by V-slope method. Results: $VO_2$ max and AT was $45.1{\pm}6.66m\ell$/kg/min and $26.0{\pm}6.78m\ell$/kg/min in treadmill and $34.9{\pm}5.89m\ell$/kg/min, $19.5{\pm}4.77m\ell$/kg/min in Cycle Ergometer. The measured-$VO_2max$/pred-$VO_2max$ was $98.8{\pm}13.24%$ in treadmill; $84.4{\pm}13.42%$ in cycle ergometer. Comparing $VO_2$ max in treadmill with that obtained by Hassen's method, there were significant differences.(p<0.01). At maximal exercise there were differences in HRR, $O_2$/pulse, BR, $V_E$/MVV, $V_E/VCO_2$ between treadmill and cycle but not in $V_E/VO_2$, Vd/Vt, Ti/Ttot. At AT there were differences in $O_2$/pulse, BR, $V_E$/MVV, Ti/Ttot between treadmill and cycle, otherwise not. Conclusion: According to the result of this study, there are larger gap between treadmill and cycle ergometer in normal Korean adults than foreign data, and it needs further study to obtain reference value of Korea.

• Korean Journal of Metals and Materials
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• v.46 no.4
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• pp.249-256
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• 2008

0.5 wt% Al doped ZnO thin films (AZO) were prepared on glass substrates using RF magnetron sputtering method. Thin films were grown at substrate temperature of $250^{\circ}C$, RF power of 75W, working pressure of 10 mTorr, by changing the $O_2/Ar$ pressure ratio from 0% to 16.7%. The effects of oxygen partial pressure during the deposition process on structural and optical properties of the films were investigated using XRD, SEM, AFM, EPMA and UV-visible spectroscopy. All the AZO thin films were grown as hexagonal wurtzite phase with the c-axis preferred out-of-plane orientation. The surface roughness and grain size of AZO films decreased with increasing oxygen ratio from 10.6 nm to 3.2 nm and 94.9 nm to 30.9 nm, respectively. On the other hand, the transmittance and band gap energy of the AZO films increased from 84.7% to 92.6% and 3.24 eV to 3.28 eV, respectively with increasing the $O_2/Ar$ pressure ratio.

• Applied Chemistry for Engineering
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• v.24 no.5
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• pp.537-543
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• 2013

In this study, the push-pull structure polymer for organic photo voHaics (OPVs) was synthesized and characterized. The poly{4,8-didodecyloxybenzo[1,2-b;3,4-b]dithiophene-alt-5,6-bis(octyloxy)-4,7-di(thiophen-2-yl)benzo[c][1,2,5]-thiadiazole} (PDBDT-TBTD) was synthesized by Stille coupling reaction using the benzothiadiazole (BTD) derivative as an electron acceptor and benzodithiophene (BDT) derivative as an electron donor. The structure of monomers and polymers was identified by $^1H-NMR$ and GC-MS. The optical, physical and electrochemical properties of the conjugated polymer were identified by GPC, TGA, UV-Vis and cyclic voltammetry. The number average molecular weight ($M_n$) and initial decomposition temperature (5% weight loss temperature, $T_d$) of PDBDT-TBTD were 6200 and $323^{\circ}C$, respectively. The absorption maxima on the film was about 599 nm and the optical band gap was about 1.70 eV. The structure of device was ITO/PEDOT : PSS/PDBDT-TBTD : $PC_{71}BM/BaF_2/Ba/Al$. PDBDT-TBTD and $PC_{71}BM$ were blended with the weight ratio of 1:2 which were then used as an optical active layer. The power conversion efficiency (PCE) of fabricated device was measured by solar simulator and the best PCE was 2.1%.

• Journal of the Korean Recycled Construction Resources Institute
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• v.9 no.4
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• pp.537-544
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• 2021

In order to describe the fill-up stages of a near-surface disposal facility vault, a mock-up test is performed, and its behavior during the fil l -up stages is investigated. On an in-site concrete foundation with a l ength of 6600mm, a width of 6600mm and a thickness of 400mm, a reinforced concrete disposal vaul t is manufactured with 4 precast (PC) corner wal l s and 8 PC side wal l s. 36 wasted drums are pl aced on the 1st fl oor in 6 by 6, and then the empty space is fil l ed with grout fil l er. These processes are repeated up to the 5th floor, and the verticality and the joint gaps are measured for each fill-up stage. The verticality is measured using a level at 6 positions on each side wall (3 positions on the left and right sides, respectivel y), i.e. a total of 24 positions on the 4 side wal l s. The joint gaps are measured at 9 positions on each side wal l (3 positions on the left, center and right sides, respectively), I.e. a total 36 positions on the 4 side walls. To measure the joint gaps, crack tips are installed on the left and right sides of every joint gap, and vernier calipers are used. The measured verticality obtained through the mock-up test was found to be ±0.1° based on the initial stage (ST0), and the result of the joint gap was up to 0.38mm. This appears to have a negligible effect on the structure.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.77-77
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• 1998

Present silicon dioxide (SiOz) 떠m as intennetal dielectridIMD) layers will result in high parasitic c capacitance and crosstalk interference in 비gh density devices. Low dielectric materials such as f f1uorina뼈 silicon oxide(SiOF) and f1uoropolymer IMD layers have been tried to s이ve this problem. I In the SiOF ftlm, as fluorine concentration increases the dielectric constant of t뼈 film decreases but i it becomes unstable and wa않r absorptivity increases. The dielectric constant above 3.0 is obtain어 i in these ftlms. Fluoropolymers such as polyte$\sigma$따luoroethylene(PTFE) are known as low dielectric c constant (>2.0) materials. However, their $\alpha$)Or thermal stability and low adhesive fa$\pi$e have h hindered 야1리ru뚱 as IMD ma따"ials. 1 The concept of a plasma processing a찌Jaratus with 비gh density plasma at low pressure has r received much attention for deposition because films made in these plasma reactors have many a advantages such as go여 film quality and gap filling profile. High ion flux with low ion energy in m the high density plasma make the low contamination and go어 $\sigma$'Oss피lked ftlm. Especially the h helicon plasma reactor have attractive features for ftlm deposition 야~au똥 of i앙 high density plasma p production compared with other conventional type plasma soun:es. I In this pa야Jr, we present the results on the low dielectric constant fluorocarbonated-SiOF film d밑JOsited on p-Si(loo) 5 inch silicon substrates with 00% of 0dFTES gas mixture and 20% of Ar g gas in a helicon plasma reactor. High density 띠asma is generated in the conventional helicon p plasma soun:e with Nagoya type ill antenna, 5-15 MHz and 1 kW RF power, 700 Gauss of m magnetic field, and 1.5 mTorr of pressure. The electron density and temperature of the 0dFTES d discharge are measUI벼 by Langmuir probe. The relative density of radicals are measured by optic허 e emission spe따'Oscopy(OES). Chemical bonding structure 3I피 atomic concentration 따'C characterized u using fourier transform infrared(FTIR) s야3띠"Oscopy and X -ray photonelectron spl:’따'Oscopy (XPS). D Dielectric constant is measured using a metal insulator semiconductor (MIS;AVO.4 $\mu$ m thick f fIlmlp-SD s$\sigma$ucture. A chemical stoichiome$\sigma$y of 야Ie fluorocarbina$textsc{k}$영-SiOF film 따~si야영 at room temperature, which t the flow rate of Oz and FTES gas is Isccm and 6sccm, res야~tvely, is form려 야Ie SiouFo.36Co.14. A d dielec$\sigma$ic constant of this fIlm is 2.8, but the s$\alpha$'!Cimen at annealed 5OOt: is obtain려 3.24, and the s stepcoverage in the 0.4 $\mu$ m and 0.5 $\mu$ m pattern 킹'C above 92% and 91% without void, res야~tively. res야~tively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.3
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• pp.292-296
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• 2022

(La_0.5Nd_0.2Sr_0.3)MnO₃ specimens were prepared by a solid-state reaction. In all specimens, X-ray diffraction patterns of an orthorhombic structure were shown. The fracture surfaces of (La_0.5Nd_0.2Sr_0.3)MnO₃ specimens showed a transgranular fracture pattern be possibly due to La ions (0.122 nm) as a perovskite A-site dopant substituting for Nd ions (0.115 nm) having a small ionic radius. The full-width at half maximum (FWHM) of the Mn 2p XPS spectra showed a value greater than that [8] of the single valence state, which is believed to be due to the overlapping of Mn²⁺, Mn³⁺, and Mn⁴⁺ ions. The dependence of Mn 2p spectra on the Mn³⁺/Mn⁴⁺ ratio according to sintering time was not observed. Electrical resistivity resulted in the minimum value of 100.7 Ω-cm for the specimen sintered for 9 hours. All specimens show a typical negative temperature coefficient of resistance (NTCR) characteristics. In the 9-hour sintered specimen, TCR, activation energy, and B25/65-value were -1.24%/℃, 0.19 eV, and 2,445 K, respectively.

• Korean Journal of Ecology and Environment
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• v.40 no.3
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• pp.370-378
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• 2007

The objective of this research was to diagnose integrative ecological health in Bansuk Stream, one of the tributaries of Gap Stream, using the fish assemblage during July 2006${\sim}$April 2006. For this research, we selected six sampling sites and applied some approaches such as the Index of Biological Integrity (IBI), Qualitative Habitat Evaluation Index (QHEI), and necropsy-based Health Assessment Index (HAI). The stream health condition, based on the IBI values, averaged 24 (n= 18, range: $10{\sim}46$), indicating "poor${\sim}$fair" condition according to the criteria of US EPA (1993). Physical habitat condition, based on the QHEI, averaged 116 (n=6, range: $77{\sim}139$), indicating "fair${\sim}$good" condition. Values of IBI were more correlated with 3 metrics of instream cover ($M_1$, r=0.553, p=0.017, n=18), flow/velocity ($M_3$, r=0.627, p=0.005, n=18), and riffes/bends ($M_7$, r=0.631, p=0.005, n=18) than other metrics. Value of HAI in the control was zero (i.e., excellent condition), while the values in the T1 and T2 treatments were 5 (range: 0${\sim}$30) and 50 (range: 40${\sim}$80), respectively. The maximum values of IBI (46) were coincided with zero of HAI. Thus, these approaches seem to be a good tool for a diagnosis and evaluations of stream ecosystem health.

• Journal of Sensor Science and Technology
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• v.13 no.2
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• pp.157-167
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• 2004

A stoichiometric mixture of evaporating materials for $CuAlSe_{2}$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $CuAlSe_{2}$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $680^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuAlSe_{2}$ single crystal thin films measured with Hall effect by van der Pauw method are $9.24{\times}10^{16}cm^{-3}$ and $295cm^{2}/V{\codt}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuAlSe_{2}$ obtained from the absorption spectra was well described by the Varshni's relation, $E_{g}(T)$ = 2.8382 eV - ($8.68{\circ}10^{-4}$ eV/K)$T^{2}$/(T + 155 K). The crystal field and the spin-orbit splitting energies for the valence band of the $CuAlSe_{2}$ have been estimated to be 0.2026 eV and 0.2165 eV at 10 K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_{5}$ states of the valence band of the $CuAlSe_{2}$. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1-}$, $B_{1-}$, and $C_{1-}$ exciton peaks for n = 1.

• Food Science of Animal Resources
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• v.42 no.5
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• pp.874-888
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• 2022

This study aimed to compare the similarities, physicochemical properties, and muscle fiber characteristics of porcine skeletal muscles. Fourteen types of muscles were collected from nine pig carcasses at 24 h post-mortem and classified by muscle architecture into two main groups, namely parallel and pennate. The muscles were further differentiated into three subtypes per group. These included fan-shaped, fusiform, and strap for the parallel group, and unipennate, bipennate, and multipennate for the pennate group. Parallel-fibered muscles, which were composed of larger I, IIA, IIX, and IIXB fibers and a lower density of IIA fibers, showed higher redness and yellowness values than pennate-fibered muscles (p<0.05). However, the relative fiber area was not significantly different between the parallel and pennate groups (p>0.05). In the subtypes of parallel architecture, the strap group showed lower moisture content and higher redness values than the other subtypes and had considerably higher amounts of oxidative fibers (I and IIA; 72.3%) than the fan-shaped and fusiform groups (p<0.05). In the pennate group, unipennate showed comparatively lower moisture content and higher lightness than other pennate subtypes and was composed of smaller I, IIA, and IIX fibers than the bipennate and multipennate groups (p<0.05). Finally, a different trend of muscle clustering by hierarchical cluster analysis was found between physicochemical properties and muscle fiber characteristics. These results suggest that the physicochemical properties and muscle fiber characteristics of porcine skeletal muscles are not significantly dependent on morphological properties but are rather related to the intrinsic properties of the individual muscles.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.352-356
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• 2003

A stoichiometric mixture of evaporating materials for $CuGaSe_2$ single crystal am films was prepared from horizontal electric furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal $CuGaSe_2$, it was found tetragonal structure whose lattice constant $a_0$ and $c_0$ were $5.615\;{\AA}\;and\;11.025\;{\AA}$, respectively. To obtain the single crystal thin films, $CuGaSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $610^{\circ}C$ and $450^{\circ}C$, respectively, The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuGaSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $9.24{\times}10^{16}\;cm^{-3}$ and $295\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;:\;1.7998\;eV\;-\;(8.7489\;{\times}\;10^{-4}\;eV/K)T^2(T\;+\;335\;K)$. After the as-grown $CuGaSe_2$ single crystal thin films was annealed in Cu-, Se-, and Ga-atmospheres, the origin of point defects of $CuGaSe_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{CU}$, $V_{Se}$, $CU_{int}$, and $Se_{int}$, obtained by PL measurements were classified as a donors or accepters type. And we concluded that the heat-treatment in the Cu-atmosphere converted $CuGaSe_2$ single crystal thin films to an optical n-type. Also, we confirmed that Ga in $CuGaSe_2/GaAs$ did not form the native defects because Ga in $CuGaSe_2$ single crystal thin films existed in the form of stable bonds.