• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.533-536
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• 2001

Single crystal cubic silicon carbide(3C-SiC) thin film were deposited on Si(100) substrate up to a thickness of 4.3 $\mu\textrm{m}$ by APCVD(atmospheric pressure chemical vapor deposition) method using hexamethyildisilane(HMDS) at 1350$^{\circ}C$. The HMDS flow rate was 0.5 sccm and the carrier gas flow rate was 2.5 slm. The HMDS flow rate was important to get a mirror-like. The growth rate of the 3C-SiC films was 4.3 $\mu\textrm{m}$/hr. The 3C-SiC epitaxical layers on Si(100) were characterized by XRD(X-ray diffraction), raman scattering and RHEED(reflection high-energy electron diffraction), respectively The 3C-SiC distinct phonons of TO(transverse optical) near 796 cm$\^$-1/ and LO(longitudinal optical) near 974${\pm}$1 cm$\^$-1/ were recorded by raman scattering measurement. The deposition films were identified as the single crystal 3C-SiC phase by XRD spectra(2$\theta$=41.5$^{\circ}$). Also, with increase of films thickness, RHEED patterns gradually changed from a spot pattern to a streak pattern

• Journal of the Korean Ceramic Society
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• v.50 no.6
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• pp.402-409
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• 2013

The objective of this study was to develop a synthesis process for ${\beta}$-SiC powders to reduce the synthesis temperature and to control the particle size and to prevent particle agglomeration of the synthesized ${\beta}$-SiC powders. A phenol resin and TEOS were used as the starting materials for the carbon and Si sources, respectively. $SiO_2$-C hybrid precursors with various C/Si mole ratios were fabricated using a conventional sol-gel process. ${\beta}$-SiC powders were synthesized by a carbothermal reduction process using $SiO_2$-C hybrid precursors with various C/Si mole ratios (1.6 ~ 2.5) fabricated using a sol-gel process. In this study, the effects of excess carbon and the addition of Si powders to the $SiO_2$-C hybrid precursor on the synthesis temperature and particle size of ${\beta}$-SiC were examined. It was found that the addition of metallic Si powders to the $SiO_2$/C hybrid precursor with excess carbon reduced the synthesis temperature of the ${\beta}$-SiC powders to as low as $1300^{\circ}C$. The synthesis temperature for ${\beta}$-SiC appeared to be reduced with an increase of the C/Si mole ratio in the $SiO_2$-C hybrid precursor by a direct carburization reaction between Si and excess carbon.

• Journal of Korean Neurosurgical Society
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• v.41 no.2
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• pp.141-144
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• 2007

A vertebral arte [VA] injury presents a difficult problem in atlantoaxial fixation. Recent technical reports described posterior C2 fixation using bilateral, crossing C2 laminar screws. The translaminar screw technique has the advantages of producing little risk of VA injury and the unconstrained screw placement. In addition, biomechanical studies have demonstrated the potential of the translaminar screw technique to provide a firmer construct that is equivalent to methods currently used. We report the successful treatment of C1-2 instability with a left-side high-riding VA. Because of the potential risk of VA injury, we performed a posterior C1-2 fixation with a combination of pedicle screws and a laminar screw in C2. We first placed bilateral C1 lateral mass screws and a right-side C2 pedicle screw. However, placement of the left- side C2 pedicle screw was technically difficult due to a narrow isthmus and pedicle. A laminar screw was inserted instead and authors believe that this posterior C1-C2 fixation with a combination of pedicle screws and a laminar screw in C2 can be a useful alternative technique for the treatment of C1-C2 instability in the presence of a unilateral high-riding VA.

• Korean Journal of Materials Research
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• v.26 no.6
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• pp.337-341
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• 2016

Cu-30 vol% SiC composites with relatively densified microstructure and a sound interface between the Cu and SiC phases were obtained by pressureless sintering of PCS-coated SiC and Cu powders. The coated SiC powders were prepared by thermal curing and pyrolysis of PCS. Thermal curing at $200^{\circ}C$ was performed to fabricate infusible materials prior to pyrolysis. The cured powders were heated treated up to $1600^{\circ}C$ for the pyrolysis process and for the formation of SiC crystals on the surface of the SiC powders. XRD analysis revealed that the main peaks corresponded to the ${\alpha}$-SiC phase; peaks for ${\beta}$-SiC were newly appeared. The formation of ${\beta}$-SiC is explained by the transformation of thermally-cured PCS on the surface of the initial ${\alpha}$-SiC powders. Using powder mixtures of coated SiC powder, hydrogen-reduced Cu-nitrate, and elemental Cu powders, Cu-SiC composites were fabricated by pressureless sintering at $1000^{\circ}C$. Microstructural observation for the sintered composites showed that the powder mixture of PCS-coated SiC and Cu exhibited a relatively dense and homogeneous microstructure. Conversely, large pores and separated interfaces between Cu and SiC were observed in the sintered composite using uncoated SiC powders. These results suggest that Cu-SiC composites with sound microstructure can be prepared using a PCS coated SiC powder mixture.

• Journal of Powder Materials
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• v.17 no.1
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• pp.13-22
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• 2010

The unique features of spark plasma sintering process are the possibilities of a very fast heating rate and a short holding time to obtain fully dense materials. $\beta$-SiC powder with 0, 2, 6, 10 wt% of $\alpha$-SiC particles (seeds) and 4 wt% of Al-B-C (sintering aids) were spark plasma sintered at $1700-1850^{\circ}C$ for 10 min. The heating rate, applied pressure and sintering atmosphere were kept at $100^{\circ}C/min$, 40 MPa and a flowing Ar gas (500 CC/min). Microstructural development of SiC as function of seed content and temperature during spark plasma sintering was investigated quantitatively and statistically using image analysis. Quantitative image analyses on the sintered SiC ceramics were conducted on the grain size, aspect ratio and grain size distribution of SiC. The microstructure of SiC sintered up to $1700^{\circ}C$ consisted of equiaxed grains. In contrast, the growth of large elongated SiC grains in small matrix grains was shown in sintered bodies at $1750^{\circ}C$ and the plate-like grains interlocking microstructure had been developed by increasing sintering temperature. The introduction of $\alpha$-SiC seeds into $\beta$-SiC accelerated the grain growth of elongated grains during sintering, resulting in the plate-like grains interlocking microstructure. In the $\alpha$-SiC seeds added in $\beta$-SiC, the rate of grain growth decreased with $\alpha$-SiC seed content, however, bulk density and aspect ratio of grains in sintered body increased.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.6
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• pp.441-445
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• 2013

ZnO nanowires on the a-, c- and m-plane oriented 4H-SiC substrates were grown by using a high temperature tube furnace. Ti/Au electrodes were deposited on ZnO nanowires and a-, c- and m-plane 4H-SiC substrates, respectively. The shape and density of the ZnO nanowires were investigated by field emission scanning electron microscope. It was found that the growth direction of nanowires depends strongly on growth parameters such as growth temperature and pressure. In this work, The sensitivity of nanowires formed a-, c- and m-plane oriented 4H-SiC gas sensor was measured at $300^{\circ}C$ with CO gas concentration of 80%. The nanowires grown on a-plane oriented 4H-SiC show improved sensing performance than those on c- and m-plane oriented 4H-SiC due to the increased density of nanowire on a-plane 4H-SiC.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.7
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• pp.475-480
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• 2018

We investigated the tribological properties of amorphous carbon (a-C) films deposited with CrC interlayers of various thicknesses as the adhesive layer. A-C and CrC thin films were deposited using the unbalanced magnetron (UBM) sputtering method with graphite and chromium as the targets. CrC films as the interlayer were fabricated under a-C films, and various structural, surface, and tribological properties of a-C films deposited with various CrC interlayer thicknesses were investigated. With various CrC interlayer thicknesses under a-C films, the tribological properties of CrC/a-C films were improved; the increased film thickness exhibited a maximum high hardness of over 27.5 GPa, high elastic modulus of over 242 GPa, critical load of 31 N, residual stress of 1.85 GPa, and a smooth surface below 0.09 nm at the condition of 30-nm CrC thickness.

• Asian Pacific Journal of Cancer Prevention
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• v.15 no.13
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• pp.5411-5416
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• 2014

Background: A number of studies have reported relationships of CYP2E1 RsaI/PstI polymorphisms with susceptibility to lung cancer in Chinese population. However, the epidemiologic results have been conflictive rather than conclusive. The purpose of this study was to address the associations of CYP2E1 RsaI/PstI polymorphisms with lung cancer risk in Chinese population comprehensively. Materials and Methods: Systematic searches were conducted in the PubMed, Science Direct, Elsevier, CNKI and Chinese Biomedical Literature Databases. Pooled odds ratios (ORs) with 95% confidence intervals (CIs) were calculated to estimate the strength of association. Results: Overall, we observed a decreased lung cancer risk among subjects carrying CYP2E1 RsaI/PstI c1/c2 and c1/c2+c2/c2 genotypes (OR=0.76, 95%CI: 0.64-0.90 and OR=0.78, 95%CI: 0.66-0.93, respectively), as compared with subjects carrying the c1/c1 genotype. In subgroup analysis, we observed a decreased lung cancer risk among c1/c2 carriers in hospital-based studies (OR=0.81, 95%CI: 0.68-0.98) and among carriers with c1/c2 and c1/c2+c2/c2 genotypes in population-based studies(OR=0.57, 95%CI: 0.42-0.79 and OR=0.58, 95%CI: 0.43-0.79, respectively), as compared with subjects carrying the c1/c1 genotype. Limiting the analysis to studies with controls in Hardy-Weinberg equilibrium (HWE), we similarly observed a decreased lung cancer risk among c1/c2 and c1/c2+c2/c2 carriers (OR=0.73, 95%CI: 0.60-0.88 and OR=0.73, 95%CI: 0.60-0.88, respectively), as compared with c1/c1. Conclusions: Our results suggested that CYP2E1 RsaI/PstI c1/c2 and c1/c2+c2/c2 variants might be a protective factor for developing lung cancer in Chinese population. Further well-designed studies with larger sample size are required to verify our findings.

• Korean Journal of Microbiology
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• v.30 no.2
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• pp.101-107
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• 1992

Cytochrome c oxida5e from chemotrophically grown R p , geliitinosu was purified by cytochrome c affinity chromatography and DEAE-Sephacel ion exchange chromatography. The molecular weight of the cytochrome c oxidase was approximately 110.000 Da by sephacryl s-300 gel chromatography and approximately 52, 000 Da by SDS-gel electrophoresis, respectively. Therefore. cytochrolne c oxidase of Rps. gehtinosu seems to be dimer. The cytochrome c oxidasc was very sensitive to temperature. It's Km and Vmax were 20 pM and 44 unitlmg protein for horsc heart cytochrome c as a substrate. respectively, and its optimum pH and temperature were 6.4 and 25$^{\circ}$C. respectively. The absorption peaks of the reduced cytochrome c oxidase showed at 554 nm, 523 nm. and 422 nm. The activiiy of cytochrome c oxidase was inhibited by KCN, and NaN3, but not by CO, antimycir~ A. and myxothiazol. The cytochrome c-551 was produced either in phototrophically or chemotrophically grown Rps. gelaiinosci. The rcduced cytochrome c-551 was oxidized by b-type cytochrome c oxidase from Rp.v. gc.lrtino.sc~. Km and Vmax of cytochrome c oxidase was 26 pM and 31 unitlnlg protein For cytochrome c-551 as a substrate. respectively. Thercfore. thc electron transfer chain of chemotrophically grown Rps. glatinosa seems lo be ubiquinol cytochrome bc, complex -'cytochrome c-55lMb-type cytochrome c oxidase+02.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04b
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• pp.133-136
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• 2004

In this study, the characteristics of 3C-SiC ohmic contact were investigated. Titanium-tungsten(TiW) films were used for contact metalization. The ohmic contact resistivity between 3C-SiC and TiW was measured by HP4155 and then calculated with the circular transmission line method(C-TLM). And also the physical properties of TiW and the interface between TiW and 3C-SiC were analyzed using XRD and AES. TiW films make a good role of a diffusion barrier and their contact properties with 3C-SiC are stable at high temperature.