• Journal of Industrial Technology
• /
• v.20 no.A
• /
• pp.247-256
• /
• 2000

Precursor gels with the composition of $xZrO_2{\cdot}(100-x)SiO_2$ systems (x=10, 20 and 30 mol%) were prepared by the sol-gel method. Kinetic parameters, such as activation energy, Avrami's exponent, n, and dimensionality crystal growth value, m, have been simultaneously calculated from the DTA data using Kissinger and Matusita equations. The crystallite size dependence on tetragonal to monoclinic transformation of $ZrO_2$ was investigated using XRD, in relation to the fracture toughness. The crystallization of tetragonal $ZrO_2$ occurred through 3-dimensional diffusion controlled growth(n=m=2) and the activation energy for crystallization was calculated using Kissinger and Matusita equations, as about $310{\sim}325{\pm}10kJ/mol$. The growth of $t-ZrO_2$, in proportion to the cube of radius, increased with increasing heating temperature and heat-treatment time. It was suggested that the diffusion of Zr4+ions by Ostwald ripening was rate-limiting process for the growth of $t-ZrO_2$ crystallite size. The fracture toughness of $xZrO_2{\cdot}(100-x)SiO_2$ systems glass ceramics increased with increasing crystallite size of $t-ZrO_2$. The fracture toughness of $30ZrO_2{\cdot}70SiO_2$ system glass ceramics heated at $1,100^{\circ}C$ for 5 h was $4.84Mpam^{1/2}$ at a critical crystaliite size of 40 nm.

• Korean Journal of Materials Research
• /
• v.26 no.2
• /
• pp.95-99
• /
• 2016

In this study, 5 um sized $ZrSiO_4$ was ground to 1.9 um, 0.3 um, and 0.1 um sized powders by wet high energy milling process, and the sintering characteristics were observed. Pure $ZrSiO_4$ itself can-not be sintered to these levels of theoretical density, but it was possible to sinter $ZrSiO_4$ powder of nano-scale size of, -0.1 um to the theoretical density and to lower the sintering temperature for full density. Also, the decomposition of $ZrSiO_4$ with a size in the micron range resulted in the formation of monoclinic $ZrO_2$; however, in the nano sized range, the decomposition resulted in the tetragonal phase of $ZrO_2$. So, it was possible to improve the sintering characteristics of nano-sized $ZrSiO_4$ powders.

• Proceedings of the KIEE Conference
• /
• 2007.07a
• /
• pp.1303-1304
• /
• 2007

The composites were fabricated, respectively, using 61[vol.%]SiC-39[vol.%]$TiB_2$ and using 61[vol.%]SiC-39[vol.%]$ZrB_2$ powders with the liquid forming additives of 12[wt%] $Al_{2}O_{3}+Y_{2}O_{3}$ by hot pressing annealing at $1650[^{\circ}C]$ for 4 hours. Reactions between SiC and transition metal $TiB_2$, $ZrB_2$ were not observed in this microstructure. ${\beta}{\rightarrow}{\alpha}$-SiC phase transformation was occurred on the SiC-$TiB_2$ and SiC-$ZrB_2$ composite. The relative density, the flexural strength and Young's modulus showed the highest value of 98.57[%], 226.06[Mpa] and 86.38[Gpa] in SiC-$ZrB_2$ composite at room temperature respectively. The electrical resistivity showed the lowest value of $7.96{\times}10^{-4}[{\Omega}{\cdot}cm]$ for SiC-$ZrB_2$ composite at $25[^{\circ}C]$. The electrical resistivity of the SiC-$TiB_2$ and SiC-$ZrB_2$ composite was all positive temperature coefficient resistance (PTCR) in the temperature ranges from $25[^{\circ}C]$ to $700[^{\circ}C]$. The resistance temperature coefficient of composite showed the value of $6.88{\times}10^{-3}/[^{\circ}C]$ and $3.57{\times}10^{-3}/[^{\circ}C]$ for SiC-$ZrB_2$ and SiC-$TiB_2$ composite in the temperature ranges from $25[^{\circ}C]$ to $700[^{\circ}C]$.

• Journal of the Korean Ceramic Society
• /
• v.34 no.7
• /
• pp.774-780
• /
• 1997

Porous low reflective coating films of SiO2.ZrO2 system were prepared from the mixed alkoxide solutions of Zr(O-nC3H7)4 and partially prehydrolyzed TEOS by the sol-gel method using the dip-coating technique. In the case of 90SiO2.10ZrO2 porous coating films with HCl and H2O content was 0.3 mole and 4 mole, 378 m2/g of the specific surface area, 0.254 cm3/g of total pore volume, 30-50$\AA$ of average pore diameter. The transmittance of 90SiO2.10ZrO2 porous coated films was 95.38% at the wavelength of 550 nm, compared with the parent glass, the transmittance was increased with 4.38%.

• Journal of the Korean Ceramic Society
• /
• v.52 no.1
• /
• pp.19-22
• /
• 2015

The joining behavior of YSZ ceramics to the glasses used in the $9Al_2O_3-24ZrO_2-51SiO_2-16R_2O$ and $9Al_2O_3-24ZrO_2-51SiO_2-7La_2O_3-9R_2O$ (wt%) glass systems was investigated. The glass transition and softening temperatures were determined to be $430^{\circ}C$ and $760^{\circ}C$, respectively. The behavior of the contact angle was inversely proportional to an increase in the temperature. The Zr element in YSZ acted as a nucleation agent and contributed to the bonding behavior at the interface.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.56 no.9
• /
• pp.1602-1608
• /
• 2007

The composites were fabricated, respectively, using 61[vol.%] SiC-39[vol.%] $TiB_2$ and using 61[vol.%] SiC-39[vol.%] $ZrB_2$ powders with the liquid forming additives of 12[wt%] $Al_2O_3+Y_2O_3$ by hot pressing annealing at $1650[^{\circ}C]$ for 4 hours. Reactions between SiC and transition metal $TiB_2$, $ZrB_2$ were not observed in this microstructure. The result of phase analysis of composites by XRD revealed SiC(6H, 3C), $TiB_2$, $ZrB_2$ and $YAG(Al_5Y_3O_{12})$ crystal phase on the Liquid-Phase-Sintered(LPS) $SiC-TiB_2$, and $SiC-ZrB_2$ composite. $\beta\rightarrow\alpha-SiC$ phase transformation was occurred on the $SiC-TiB_2$ and $SiC-ZrB_2$ composite. The relative density, the flexural strength and Young's modulus showed the highest value of 98.57[%], 249.42[MPa] and 91.64[GPa] in $SiC-ZrB_2$ composite at room temperature respectively. The electrical resistivity showed the lowest value of $7.96{\times}10^{-4}[\Omega{\cdot}cm]$ for $SiC-ZrB_2$ composite at $25[^{\circ}C]$. The electrical resistivity of the $SiC-TiB_2$ and $SiC-ZrB_2$ composite was all positive temperature coefficient resistance (PTCR) in the temperature ranges from $25[^{\circ}C]$ to $700[^{\circ}C]$. The resistance temperature coefficient of composite showed the lowest value of $1.319\times10^{-3}/[^{\circ}C]$ for $SiC-ZrB_2$ composite in the temperature ranges from $100[^{\circ}C]$ to $300[^{\circ}C]$ Compositional design and optimization of processing parameters are key factors for controlling and improving the properties of SiC-based electroconductive ceramic composites.

• Journal of the Korean Ceramic Society
• /
• v.37 no.4
• /
• pp.368-375
• /
• 2000

Fracture toughness of particulate composites of Al2O3/SiC, Al2O3/ZrO2 and Al2O3/ZrO2/SiC was analysed theoretically. According to the suggested particle bridging model for obtaining the R-curve height, the crack extension resistance for the long crack was linearly proportional to the residual calmping stress at the interface between the second phase and the matrix. It was also a function of the particle size and the content. It was confirmed that the rising R-curve behavior of Al2O3 containing 30 vol% SiC particles of 3${\mu}{\textrm}{m}$ was owing to the strong crack bridging by SiC particles. For Al2O3/ZrO2/SiC composites, the tensional stress from the 3${\mu}{\textrm}{m}$ SiC particles was large enough to activate the spontaneous transformation of the ZrO2. The crack extension resistance due to the particle bridging mechanism did not seem to be affected much by the coupled toughening, but its resultant toughness increase could be significantly smaller due to the dependency on the matrix toughness.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.60 no.11
• /
• pp.2083-2087
• /
• 2011

The SiC-$ZrB_2$ composites were produced by subjecting a 40:60 vol.% mixture of zirconium diboride($ZrB_2$) powder and ${\beta}$-silicon carbide (SiC) matrix to spark plasma sintering(SPS). Sintering was carried out for 60sec at $1400^{\circ}C$ (designation as TP145 and TP146), $1500^{\circ}C$(designation as TP155 and TP156) and uniaxial pressure 50MPa, 60MP under argon atmosphere. The physical, electrical, and mechanical properties of the SiC-$ZrB_2$ composites were examined. The relative density of TP145, TP146, TP155 and TP156 were 94.75%, 94.13%, 97.88% and 95.80%, respectively. Reactions between ${\beeta}$-SiC and $ZrB_2$ were not observed via x-ray diffraction (hereafter, XRD) analysis. The flexural strength, 306.23MPa of TP156 was higher than that, 279.42MPa of TP146 at room temperature, but lower than that, 392.30MPa of TP155. The properties of a SiC-$ZrB_2$ composites through SPS under argon atmosphere were positive temperature coefficient resistance (hereafter, PTCR) in the range from $25^{\circ}C$ to $500^{\circ}C$. The electrical resistivities of TP145, TP146, TP155 and TP156 were $6.75{\times}10^{-4}$, $7.22{\times}10^{-4}$, $6.17{\times}10^{-4}$ and $6.71{\times}10^{-4}{\Omega}{\cdot}cm$ at $25^{\circ}C$, respectively. The densification of a SiC-$ZrB_2$ composite through hot pressing depend on the sintering temperature and pressure. However, it is convinced that the densification of a SiC-$ZrB_2$ composite do not depend on sintering pressure under SPS.

• Korean Journal of Materials Research
• /
• v.6 no.11
• /
• pp.1061-1066
• /
• 1996

RF magnetron reactive sputtering법으로 Fe75.5Zr8.3N16.2/SiO2(250$\AA$) 다층 박막을 FeZrN의 두께를 변화시키면서 제조하고, 제조된 박막을 진공 열처리하여 열처리 온도에 따른 포화자화, 보자력, 고주파에서의 투자율 그리고 열적 안정성을 조사하였다. Fe75.5Zr8.3N16.2/SiO2(250$\AA$) 다층박막은 FeZrN의 두께가 800$\AA$이상일 때 좋은 연자성을 나타내었다. Fe75.5Zr8.3N16.2/SiO2(250$\AA$)다층 박막을 45$0^{\circ}C$로 열처리 했을 때 포화자속밀도(1.08 T), 보자력 0.41 Oe, 1 MHz에서의 실효 투자율은 3000이상의 연자성을 나타내었다. 그 이유는 X-선 회절 분석 결과 열처리에 의해서 ZrN 미결정이 석출하여 $\alpha$-Fe 결정 성장이 억제되어 우수한 연자기적 성질이 나타난다고 판단된다. 이때 $\alpha$-Fe 입자 크기는 40-50$\AA$, ZrN의 입자 크기는 10-15$\AA$이다. 그리고 실효 투자율의 주파수 의존성에서 단층막에서는 5 MHz 이상에서 실효 투자율이 급격히 감소하는 경향을 보였으나, 다층막에서는 40MHz까지 실효 투자율이 1600이 되어 고주파에서의 연자성이 개선되었다.

• Proceedings of the KIEE Conference
• /
• 2011.07a
• /
• pp.1449-1450
• /
• 2011

The SiC-$ZrB_2$ composites were produced by subjecting a 40:60 (vol.%) mixture of zirconium diboride($ZrB_2$) powder and ${\beta}$-silicon carbide (SiC) matrix to spark plasma sintering(SPS) under argon atmosphere at 50MPa(P50) and 60MPa(P60) pressure. The relative density, 94.13% of P60 sample was lower than that, 94.75% of P50 sample. Reactions between ${\beta}$-SiC and $ZrB_2$ were not observed via x-ray diffraction (hereafter, XRD) analysis. The trend of flexural strength of SiC-$ZrB_2$ composites were in accordance with the relative density. The properties of a SiC-$ZrB_2$ composites through SPS under argon atmosphere were positive temperature coefficient resistance in the temperature range from $25^{\circ}C$ to $500^{\circ}C$, and electrical resistivity of P50 and P60 sample were $6.75{\times}10^{-4}$ and $7.22{\times}10^{-4}{\Omega}{\cdot}cm$ at room temperature, respectively.