• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.2
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• pp.92-97
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• 1999

The mechanical and electrical properties of the hot-pressed and annealed $\beta-Sic$+39vol.%$ZrB_2$ electroconductive ceramic composites were investigated as a function of the liquid forming additives of $Al_2O_3+Y_2O_3(6:4wt%)$. In this microstructures, no reactions and elongated $\alpha$-SiC grains with equiaxed $ZrB_2$, gains were observed between $\beta-SiC$ and $ZrB_2$, and the relative density was over 97.6% of the theoretical density. Phase analysis of the composites by XRD revealedmostly of $\alpha$-SiC(6H, 4H), $ZrB_2$, and weakly $\beta-SiC$(15R) phase. The fracture toughness decreased with increasing $Al_2O_3+Y_2O_3$ contents and showed the highest of $6.37MPa.m^{\fraction ane-half}$ for composite added with 4wt% $Al_2O_3+Y_2O_3$ additives at room temperature. The electrical resistivity increased with increasing $Al_2O_3+Y_2O_3$contents and showed the lowest of $1.51\times10^{-4}\Omega.cm$ for composite added with $Al_2O_3+Y_2O_3$ additives at $25^{\circ}C$. This reason is the increasing tendency of pore formation according to amount of liquid forming additives $Al_2O_3+Y_2O_3$. The electrical resistivity of the composites was all positive temperature coefficient resistance(PTCR) against temperature up to $700^{\circ}C$.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.9 no.1
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• pp.47-52
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• 2008

As the packing density of IC devices gets ever higher, the thickness of the gate $SiO_2$ layer of the MOS devices is now required to be reduced down to 1 nm. For such a thin $SiO_2$ layer, the MOS device cannot operate properly because of tunneling current and threshold voltage shift. Hence there has been much effort to develop new dielectric materials which have higher dielectric constants than $SiO_2$ and is free from such undesirable effects. In this work, the physical and electrical characteristics of ALD $ZrO_2$ film have been studied. After deposition of a thin ALD $ZrO_2$ film, it went through thermal treatment in the presence of argon gas at $800^{\circ}C$ for 1 hr. The characteristics of morphology, crystallization kinetics, and interfacial layer of $Pt/ZrO_2/Si$ samples have been investigated by using the analyzing instruments like XRD, TEM and C-V plots. It has been found that the characteristics of the $Pt/ZrO_2/Si$ device was enhanced by the thermal treatment.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 2001.10a
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• pp.355-359
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• 2001

In this study, experiments were carried out to investigate the characteristics of grinding and wear process of diamond wheel grinding ceramic materials. Normal component of grinding resistance of $AI_2O_3$ was less then that of $Si_3N_4$ and $ZrO_2$. It is because the resistance for grain shedding is less then that for layer formation. For the case of $Si_3N_4$ and $ZrO_2$, as the grain mesh number of wheel increases, the surface roughness decreases. For the case of $AI_2O_3$, the surface roughness does not decreases. For the case of $Si_3N_4$ and $ZrO_2$, grinding is carried out by abrasive wear processes. For the case of $AI_2O_3$, grinding is carried out by grain shedding process.

• Journal of the Korean Ceramic Society
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• v.31 no.8
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• pp.934-940
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• 1994

Fibers of ZrO2-SiO2 system were prepared from the hydrolysis and condensation of Si(OC2H5)4 and Zr(OnC3H7)4 with different H2O/alkoxide molar ratios. It was found that fibers could be drawn in the viscosity range of 1~100 poise from HCl catalyzed solutions with lower water contents of the mole ratio H2O/alkoxide, r 2. The fibrous gels were converted into the corresponding oxide glass fibers by heating at 80$0^{\circ}C$. Mechanical test was performed on E, A and 20ZrO2-80SiO2 glass fibers reinforced cement in order to investigate the flexural strength. The flexural strength value of 20ZrO2-80SiO2 glass fibers reinforced cement was greater than those of E and A. The chemical durability of the fibers in alkaline solutions increased with ZrO2 content. The weight loss due to the corrosion by 2N-NaOH solutions at $25^{\circ}C$ for 160 hours was about 0.31$\times$10-2 mg/dm2 for the 20ZrO2-80SiO2 glass fibers, which was superior to that of Vycor glass.

• Journal of the Korean Ceramic Society
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• v.36 no.10
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• pp.1080-1086
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• 1999

Mullite/zirconia composite was synthesized by adding zirconia and Zircon to mixture of Hapcheon kaolin(grade pink A) and aluminium nitrate salt in order to enhance strength of the mullite specimens. Kaolin and aluminium nitrate salt was mixed milled and calcined at 100$0^{\circ}C$ and then 5wt% mullite seed was added to increase mullite content. The influence of the additives(ZrO2 and ZrSiO4) and sintering temperature on the strength of the sintered specimens was investigated. The flexural strength of the specimens containing 10wt% zirconia was enhanced from 150MPa without the additive up to 300MPa after heat treatment at 156$0^{\circ}C$ In the case of addition of 15wt% zircon the strength of the specimens systhesized at 1$600^{\circ}C$ was 225 MPa.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.155-155
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• 2012

기존의 플로팅 타입의 비휘발성 메모리 소자는 스케일 법칙에 따른 인접 셀 간의 간섭현상과 높은 동작 전압에 의한 누설전류가 증가하는 문제가 발생을 하게 된다. 이를 해결하고자 SONOS (Si/SiO2/Si3N4/SiO2/Si) 구조를 가지는 전하트랩 타입의 비휘발성 메모리 소자가 제안되었다. 하지만 터널링 베리어의 두께에 따라서 쓰기/지우기 특성은 향상이 되지만 전하 보존특성은 열화가 되는 trad-off 특성을 가지며, 또한 쓰기/지우기 반복 특성에 따라 누설전류가 증가하게 되는 현상을 보인다. 이러한 특성을 향상 시키고자 많은 연구가 진행이 되고 있으며, 특히 엔지니어드 터널베리어에 대한 연구가 주목을 받고 있다. 비휘발성 메모리에 대한 엔지니어드 기술은 각 베리어; 터널, 트랩 그리고 블로킹 층에 대해서 단일 층이 아닌 다층의 베리어를 적층을 하여 유전율, 밴드갭 그리고 두께를 고려하여 말 그대로 엔지니어링 하는 것을 뜻한다. 그 결과 보다 효과적으로 기판으로부터 전자와 홀이 트랩 층으로 주입이 되고, 동시에 다층을 적층하므로 물리적인 두께를 두껍게 형성할 수가 있고 그 결과 전하 보전 특성 또한 우수하게 된다. 본 연구는 터널링 베리어에 대한 엔지니어드 기술로써, Si3N4를 기반으로 하고 높은 유전율과 낮은 뉴설전류 특성을 보이는 ZrO2을 두 번째 층으로 하는 엔지니어드 터널베리어 메모리 소자를 제작 하여 메모리 특성을 확인 하였으며, 또한 Si3N4/ZrO2의 터널베리어의 터널링 특성과 전하 트랩특성을 온도에 따라서 특성 분석을 하였다.

• Journal of the Korean Ceramic Society
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• v.39 no.4
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• pp.377-385
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• 2002

The possibility of $ZrO_2$ thin film as insulator for Metal-Ferroelectric-Insulator-Semiconductor(MFIS) structure was investgated. $SrBi_2Ta_2O_9$ and $SrBi_2Ta_2O_9$(SBT) thin films were deposited on P-type Si(111) wafer by R. F. magnetron sputtering method. The electrical properties of MFIS gate were relatively improved by inserting the $ZrO_2$ buffer layer. The window memory increased from 0.5 to 2.2V in the applied gate voltage range of 3-9V when the thickness of SBT film increased from 160 to 220nm with 20nm thick $ZrO_2$. The maximum value of window memory is 2.2V in Pt/SBT(160nm)/$ZrO_2$(20nm)/Si structure with the optimum thickness of $ZrO_2$. These memory windows are sufficient for practical application of NDRO-FRAM operating at low voltage.

• Korean Journal of Materials Research
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• v.5 no.7
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• pp.888-896
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• 1995

In this paper the manufacture of shrinkage-free in situ Mullite-ZrO$_2$ceramics through the addition of Al base metal powder to the mixture of ZrSiO$_4$and A1$_2$O$_3$was attempt. The ZrO$_2$-strengthened mullite ceramics was prepared after the following reaction form, 3(Al+Al$_2$O$_3$)+2ZrSiO$_4$longrightarrow3A1$_2$O$_3$.2SiO$_2$+2ZrO$_2$Al metal powder was added from none to 30 weight percent to the A1$_2$O$_3$. The powders were mechanically mixed, isostatically pressed and reaction sintered at 1450-1$600^{\circ}C$ for 3hours. The specimens were sintered with and without intrim soaking time for 5 hours at 125$0^{\circ}C$ for the oxidation of Al-powder The addition of aluminium accelerates the reaction and compensate the shrinkage during the sintering through an increase in volume of oxidized Al. Because coarse flake type Al metal powders were not effectively milled, oxidized Al resulted in the relative large pore in the specimen.

• Proceedings of the KIEE Conference
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• 1997.11a
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• pp.311-313
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• 1997

The effects of porosity on the pressureless sintered $\beta$-SiC-$ZrB_2$ composites with $Al_2O_3$ additions(4, 8, 12wt.%) under argon atmosphere were investigated. Relative density of $\beta$-SiC-$ZrB_2$ composites were decreased with the $Al_2O_3$ content. The relative density and fracture toughness of $\beta$-SiC-$ZrB_2$ with 4wt% $Al_2O_3$ are 93.2%, $1.323MPa{\cdot}m^{1/2}$ respectively. The Vicker's hardness and flexural strength of $\beta$-SiC-$ZrB_2$ with 12wt.% $Al_2O_3$ are 0.492GPa, 261MPa respectively. Fracture toughness of $\beta$-SiC-$ZrB_2$ composites are directly proportional to relative density.

• Journal of the Korean Ceramic Society
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• v.30 no.6
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• pp.485-491
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• 1993

Porous glass in the ZrO2.SiO2 system containning up to 30mol% zirconia were prepared by the sol-gel method from metal alkoxides and their pore characteristics with reaction parameters were investigated. The gels were made by hydrolyzing and condensation of the mixed metla alkoxides and were converted into the porous glass by heating up to $700^{\circ}C$. As a results, the mean pore radius became larger with increasing contents of HCl, H2O and hydrolysis temperature, and an alcohol with a large molecular weight for making the porous glass. In the case of 20ZrO2.80SiO2 porous glass with heated at $700^{\circ}C$, HCl and H2O content was 0.3mol and 4mol, the specific surface area was 284$m^2$/g, average mean pore radius was about 19.4$\AA$, porosity was 22.55% and pore characteristics depended on heating temperature.