• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.142-145
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• 2004

[ $Pb(Zr_{0.8}Ti_{0.2})TiO_3$ ] powder were prepared by the sol-gel method using a solution of Pb-acetate, Zr n-propoxide and Ti iso-propoxide. PZT thick film were fabricated by the screen printing method. and then the structural properties as a function of the sintering temperature were studied. PZT film thickness, obtained by four screen printing, was approximately $70{\sim}90{\mu}m$. The PZT thick film, sintered at $1050^{\circ}C$, showed deuse and uniform grain stractures and percent porosity of the thick film was 25.43%.

• Journal of the Korean Society for Heat Treatment
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• v.15 no.1
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• pp.21-24
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• 2002

The electrode materials for welding machine in automobile industry such as Cu-Cr, Cu-Zr and Cu-$Al_2O_3$ require the high electrical conductivity and the proper hardness. Therefore the effects of solution heat treatment and aging treatment on the electrical conductivity and hardness of Cu-0.8wt%Cr and Cu-1.2wt%Cr alloys have been investigated. Cu-0.8wt%Cr alloy showed the higher electrical conductivity and hardness than Cu-1.2wt%Cr alloy and both alloys showed the better electrical conductivity at $930^{\circ}C$ among 930, 980 and $1030^{\circ}C$ solution heat treatment temperatures. The electrical conductivity and hardness in both alloys were not affected by aging treatment but remarkably affected by solution heat treatment temperature. The final drawing process reduced electrical conductivity and increased hardness more in Cu-1.2wt%Cr alloy.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.253-256
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• 2003

This study presents the combined effect of electric field application and mechanical compressive stress loading on deformation in a multilayer ceramic actuator, designed with stacking alternatively $0.2(PbMn_{1/3}Nb_{2/3}O_3)-0.8(PbZr_{0.475}Ti_{0.525}O_3)$ ceramics and Ag-Pd electrode. The deformation behaviors were thought to be attributed to relative $180^{\circ}$domain quantities which is determined by pre-loaded stress and electric field. The non-linearity of piezoelectricity and strain are dependent upon the young's modulus resulting from the domain reorientation.

• Journal of the Korean Ceramic Society
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• v.39 no.3
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• pp.308-314
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• 2002

The nanocrystalline zirconia powder was synthesized from the zirconium hydroxide precipitate by hydrothermal process with the reaction temperature range 100∼250$^{\circ}$C, reaction time 1∼48 hours and additive concentration 1, 5 N NaOH solutions. The lower hydrothermal treatment temperature, the inner spherical tetragonal zirconia was synthesized. The fraction of monoclinic phase zirconia with rod shape increased with increasing the hydrothermal treatment temperature. As the concentration of the NaOH solution increases, the synthesized particle in breadth and length increased; breadth and length ratio decreased. In the case of the low concentration of NaOH solution, however, the particle length became relatively larger than its breadth resulting in the rod-shaped particles with bigger aspect ratio.

• Journal of the Korean institute of surface engineering
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• v.30 no.4
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• pp.285-297
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• 1997

Finned segment, with which are lined inner wall of the turbine combustors, are subject to severe degradation when they are exposed to a hostile environmment at elevated temperature. To protect the finned segment from this environment and to maintain good mechanical properties of components at high temperature, they are preferred to be coated. The most governing factor for the durability of coatings used in the high temperature is the microstructure of coatings; these are splat from, distibution of microcacks, size and distribution of pores, thickness of coating layer, adhesion between coating layer, and oxidation of band coating. In this study, based on the evaluation of the imported finned segment, new finned segment segment was manufactured with optimum plasma spraying parameters, and their properties were examined. Using $ZrO_2(8wt$Y_2O_3)$,/TEX> powder for ceramic coating and 67Ni-22Cr-10Al-0.5Y mixing powder for bond coating, thickness of ceramic and bond coating layer were varied in order to find optimum condition, the results showed that B2T4(bond coating : 100~250$\mu\textrm{m}$, ceramic coating : 250~300$\mu\textrm{m}$) was the best among the specimens tested. Compared to the imported finned segment, B2T4 has better bond strength, hardness, and isothermal and cyclic oxidation resistance.

• Proceedings of the Korea Crystallographic Association Conference
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• 2002.11a
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• pp.45-47
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• 2002

반도체 소자의 고집적화 및 고속화가 요구됨에 따라 MOSFET 구조의 게이트 절연막으로 사용되고 있는 SiO₂ 박막의 두께를 감소시키려는 노력이 이루어지고 있다. 0.1㎛ 이하의 소자를 위해서는 15Å 이하의 두께를 갖는 SiO₂가 요구된다. 하지만 두께감소는 절연체의 두께와 지수적인 관계가 있는 누설전류를 증가시킨다[1-3]. 따라서 같은 게이트 개패시턴스를 유지하면서 누설전류를 감소시키기 위해서는 높은 유전상수를 갖는 두꺼운 박막이 요구되는 것이다. 그러므로 약 25정도의 높은 유전상수를 갖고 5.2～7.8 eV 정도의 비교적 높은 bandgap을 갖으며, 실리콘과 열역학적으로 안정한 물질로 알려진 HfO2[4-5]가 최근 큰 관심을 끌고 있다. 본 연구에서는 HfO₂ 박막을 실제 소자에 적용하기 위하여 전극 및 열처리에 따른 HfO₂ 박막의 미세구조 및 전기적 특성에 관한 연구를 수행하였다. 이를 위해, HfO₂ 박막을 reactive DC magnetron sputtering 방법으로 증착하고, XRD, TEM, XPS를 사용하여 ZrO₂ 박막의 미세구조를 관찰하였으며, MOS 캐패시터 구조의 C-V 및 I-V 특성을 측정하여 HfO₂ 박막의 전기적 특성을 관찰하였다. HfO₂ 타겟을 스퍼터링하면 Ar 스퍼터링에 의해 에너지를 가진 산소가 기판에 스퍼터링되어 Si 기판과 반응하기 때문에 HfO₂ 박막 형성과 더불어 Si 기판이 산화된다[6]. 그래서 HfO₂같은 금속 산화물 타겟 대신에 순수 금속인 Hf 타겟을 사용하고 반응성 기체로 O₂를 유입시켜 타겟이나 시편위에서 high-k 산화물을 만들면 SiO/sub X/ 계면층을 제어할 수 있다. 이때 저유전율을 갖는 계면층은 증착과 열처리 과정에서 형성되고 특히 500℃ 이상에서 high-k/Si를 열처리하면 계면 SiO₂층은 증가하는 데, 이것은 산소가 HfO₂의 high-k 박막층을 뚫고 확산하여 Si 기판을 급속히 산화시키기 때문이다. 본 방법은 증착에 앞서 Si 표면을 희석된 HF를 이용해 자연 산화막과 오염원을 제거한 후 Hf 금속층과 HfO₂ 박막을 직류 스퍼터링으로 증착하였다. 우선 Hf 긍속층이 Ar 가스 만의 분위기에서 증착되고 난 후 공기중에 노출되지 않고 연속으로 Ar/O₂ 가스 혼합 분위기에서 반응 스퍼터링 방법으로 HfO₂를 형성하였다. 일반적으로 Si 기판의 표면 위에 자연적으로 생기는 비정질 자연 산화막의 두께는 10～15Å이다. 그러나 Hf을 증착한 후 단면 TEM으로 HfO₂/Si 계면을 관찰하면 자연 산화막이 Hf 환원으로 제거되기 때문에 비정질 SiO₂ 층은 관찰되지 않았다. 본 실험에서는 HfO2의 두께를 고정하고 Hf층의 두께를 변수로 한 게이트 stack의 물리적 특성을 살펴보았다. 선증착되는 Hf 금속층을 0, 10, 25Å의 두께 (TEM 기준으로 한 실제 물리적 두께) 로 증착시키고 미세구조를 관찰하였다. Fig. 1(a)에서 볼 수 있듯이 Hf 금속층의 두께가 0Å일때 13Å의 HfO₂를 반응성 스퍼터링 방법으로 증착하면 HfO₂와 Si 기판 사이에는 25Å의 계면층이 생기며, 이것은 Ar/O₂의 혼합 분위기에서의 스퍼터링으로 인한 Si-rich 산화막 또는 SiO₂ 박막일 것이다. Hf 금속층의 두께를 증가시키면 계면층의 성장은 억제되는데 25Å의 Hf 금속을 증착시키면 HfO₂ 계면층은 10Å미만으로 관찰된다. 그러므로 Hf 금속층이 충분히 얇으면 플라즈마내 산소 라디칼, 이온, 그리고 분자가 HfO₂ 층을 뚫고 Si 기판으로 확산되어 SiO₂의 계면층을 성장시키고 Hf 금속층이 두꺼우면 SiO/sub X/ 계면층을 환원시키면서 Si 기판으로의 산소의 확산은 막기 때문에 계면층의 성장은 억제된다. 따라서 HfO₂/Hf(Variable)/Si 계에서 HfO₂ 박막이 Si 기판위에 직접 증착되면, 순수 HfO₂ 박막의 두께보다 높은 CET값을 보이고 Hf 금속층의 두께를 증가시키면 CET는 급격하게 감소한다. 그러므로 HfO₂/Hf 박막의 유효 유전율은 단순 반응성 스퍼터링에 의해 형성된 HfO₂ 박막의 유전율보다 크다. Fig. 2에서 볼 수 있듯이 Hf 금속층이 너무 얇으면 계면층의 두께가 두꺼워 지고 Hf 금속층이 두꺼우면 HfO₂층의 물리적 두께가 두꺼워지므로 CET나 EOT 곡선은 U자 형태를 그린다. Fig. 3에서 Hf 10초 (THf=25Å) 에서 정전 용량이 최대가 되고 CET가 20Å 이상일 때는 high-k 두께를 제어해야 하지만 20Å 미만의 두께를 유지하려면 계면층의 두께를 제어해야 한다.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.1
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• pp.66-79
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• 2008

Several oxides have recently been reported to have resistance-switching characteristics for nonvolatile memory (NVM) applications. Both binary and ternary oxides demonstrated great potential as resistive-switching memory elements. However, the switching mechanisms have not yet been clearly understood, and the uniformity and reproducibility of devices have not been sufficient for gigabit-NVM applications. The primary requirements for oxides in memory applications are scalability, fast switching speed, good memory retention, a reasonable resistive window, and constant working voltage. In this paper, we discuss several materials that are resistive-switching elements and also focus on their switching mechanisms. We evaluated non-stoichiometric polycrystalline oxides ($Nb_2O_5$, and $ZrO_x$) and subsequently the resistive switching of $Cu_xO$ and heavily Cu-doped $MoO_x$ film for their compatibility with modem transistor-process cycles. Single-crystalline Nb-doped $SrTiO_3$ (NbSTO) was also investigated, and we found a Pt/single-crystal NbSTO Schottky junction had excellent memory characteristics. Epitaxial NbSTO film was grown on an Si substrate using conducting TiN as a buffer layer to introduce single-crystal NbSTO into the CMOS process and preserve its excellent electrical characteristics.

• Applied Biological Chemistry
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• v.28 no.4
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• pp.233-238
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• 1985

Glucoamylases catalyze a stepwise hydrolysis of starch with the production of glucose. In order to make an efficient conversion of starch into glucose, glucoamylases prepared from Rhizopus spp. (Sigma Co.) were attached to a porous glass and immobilized by glutaraldehyde-induced crosslinking. The porous glass used in this study was $ZrO_2$ coated, $40{\sim}80$ mesh, 550 A pore diameter. Using the forgoing glass, we could couple as much as 50mg of protein per gram of carrier. Substrate for the glucoamylase was an enzyrne-modified thin-toiling 30% cornstarch solution used where greater solubility and low viscosity are desired. Immobilized glucoamylase had an optimum pH 7.0 to the alkaline side of soluble enzyme. Km values of immobilized and soluble enzyme were 1.04 mM and 1.25mM, respectively. The thermal stability of glucoamylase was increased by immobilization and the immobilized enzyme showed an optimum temperature at $40{\sim}60^{\circ}C$. The continuous conversion of cornstarch to glucose by use of immobilized glucoamylase resulted in the production of a more than 90 DE product.

• Journal of Sensor Science and Technology
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• v.15 no.3
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• pp.168-172
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• 2006

Potentiometric $CO_{2}$ sensors were fabricated using a NASICON ($Na_{1+x}Zr_{2}Si_{X}P_{3-X}O_{12}$, 1.8 < x < 2.4) thick film and auxiliary layers. The powder of a precursor of NASICON with high purity was synthesized by a sol-gel method. By using the NASICON paste, an electrolyte was prepared on the alumina substrate by screen printing and then sintered at $1000^{\circ}C$ for 4 h. A series of $Na_{2}CO_{3}-CaCO_{3}$ auxiliary phases were deposited on the Pt sensing electrode. The electromotive force (emf) values were linearly dependent on the logarithm of $CO_{2}$ concentration in the range between 1,000 and 10,000 ppm. The device attached with $Na_{2}CO_{3}-CaCO_{3}$ (1:2 in mol.%) showed good sensing properties in the low temperatures.

• Korean Journal of Materials Research
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• v.18 no.8
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• pp.406-410
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• 2008

The properties of pyrolytic carbon (PyC) deposited from $C_2H_2$ and a mixture of $C_2H_2/C_3H_6$ on $ZrO_2$ particles in a fluidized bed reactor were studied by adjusting the deposition temperature, reactant concentration, and the total gas flow rate. The effect of the deposition parameters on the properties of PyC was investigated by analyzing the microstructure and density change. The density could be varied from $1.0\;g/cm^3$ to $2.2\;g/cm^3$ by controlling the deposition parameters. The density decreased and the deposition rate increased as the deposition temperature and reactant concentration increased. The PyC density was largely dependent on the deposition rate irrespective of the type of the reactant gas used.